DO-220AA
Abstract: No abstract text available
Text: SS1P3L & SS1P4L New Product Vishay General Semiconductor Low VF Current Density Surface Mount Schottky Barrier Rectifiers Major Ratings and Characteristics IF AV 1A VRRM 30 V, 40 V IFSM 50 A EAS 11.25 mJ VF 0.35 V, 0.38 V Tj max. 150 °C DO-220AA (SMP) Features
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Original
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DO-220AA
J-STD-020C
J-STD-002B
JESD22-B102D
14-Nov-05
DO-220AA
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PDF
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74115
Abstract: AN609 Si4856DY 74177
Text: Si4856DY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].
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Original
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Si4856DY
AN609
14-Nov-05
74115
74177
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PDF
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Untitled
Abstract: No abstract text available
Text: Crystek Corporation AVAILABLE PERFORMANCE SPECIFICATION Lower Frequency: Upper Frequency: Tuning Voltage: Supply Voltage: Output Power: Supply Current: Harmonic Suppression 2nd, 3rd & 5th Harmonic : Pushing: Pulling, 12dBr pk-pk (all Phases): Tuning Sensitivity:
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Original
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12dBr
10kHz
CVCO25CL-0160-0220
14-Nov-05
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PDF
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Untitled
Abstract: No abstract text available
Text: Crystek Corporation AVAILABLE PERFORMANCE SPECIFICATION Lower Frequency: Upper Frequency: Tuning Voltage: Supply Voltage: Output Power: Supply Current: Harmonic Suppression 2nd Harmonic : Pushing: Pulling, all Phases: Tuning Sensitivity: Phase Noise @ 10kHz offset:
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Original
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10kHz
100kHz
CVCO55CL-0470-0520
14-Nov-05
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PDF
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2314 mosfet
Abstract: Si4892BDY AN609
Text: Si4892BDY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].
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Original
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Si4892BDY
AN609
14-Nov-05
2314 mosfet
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PDF
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7636
Abstract: 7636 mosfet mosfet 4812 4812 mosfet 1216 AN609 Si4840DY
Text: Si4840DY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].
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Original
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Si4840DY
AN609
14-Nov-05
7636
7636 mosfet
mosfet 4812
4812
mosfet 1216
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PDF
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AN609
Abstract: Si1557DH
Text: Si1557DH_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].
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Original
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Si1557DH
AN609
14-Nov-05
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PDF
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74114
Abstract: SI4856ADY-RC 74114 data sheet 4894 7115 si4856A 48276 AN609 Si4856ADY
Text: Si4856ADY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].
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Original
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Si4856ADY
AN609
14-Nov-05
74114
SI4856ADY-RC
74114 data sheet
4894
7115
si4856A
48276
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PDF
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SL34A
Abstract: SL32A SL32 SL33 SL33A SL34
Text: SL32A Thru SL34A Low VF Surface Mount Schottky Barrier Rectifiers P b Lead Pb -Free Features: * Plastic package has Underwriters Laboratory Flammability Classification 94V-O Utilizing Flame Retardant Epoxy Molding Compound. * For surface mounted applications.
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Original
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SL32A
SL34A
MIL-S-19500
JEDECDO-214AC.
MIL-STD-750,
14-Nov-05
SL34A
SL32
SL33
SL33A
SL34
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PDF
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Untitled
Abstract: No abstract text available
Text: SS1P3L & SS1P4L New Product Vishay General Semiconductor Low VF Current Density Surface Mount Schottky Barrier Rectifiers Major Ratings and Characteristics IF AV 1A VRRM 30 V, 40 V IFSM 50 A EAS 11.25 mJ VF 0.35 V, 0.38 V Tj max. 150 °C DO-220AA (SMP) Features
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Original
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DO-220AA
J-STD-020C
J-STD-002B
JESD22-B102D
08-Apr-05
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PDF
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74113
Abstract: SI4850EY AN609 34721
Text: Si4850EY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].
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Original
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Si4850EY
AN609
14-Nov-05
74113
34721
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PDF
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Untitled
Abstract: No abstract text available
Text: 572D Vishay Sprague Solid Tantalum Chip Capacitors TANTAMOUNT , Low Profile, Conformal Coated, Maximum CV FEATURES • P case offers single-sided lead Pb -free terminations. • Wraparound lead (Pb)-free terminations: Q, S, A, B and T. • Low Impedance.
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Original
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EIA-481-1
14-Nov-05
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PDF
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74112
Abstract: AN609 Si4825DY
Text: Si4825DY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].
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Original
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Si4825DY
AN609
14-Nov-05
74112
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PDF
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Untitled
Abstract: No abstract text available
Text: Crystek Corporation AVAILABLE PERFORMANCE SPECIFICATION Lower Frequency: Upper Frequency: Tuning Voltage: Supply Voltage: Output Power: Supply Current: Harmonic Suppression 2nd Harmonic : Pushing: Pulling, all Phases: Tuning Sensitivity: Phase Noise @ 10kHz offset:
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Original
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10kHz
100kHz
CVCO55BE-2650-2800
14-Nov-05
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PDF
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6558
Abstract: AN609 Si1539DL
Text: Si1539DL_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].
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Original
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Si1539DL
AN609
14-Nov-05
6558
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PDF
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74110
Abstract: c 4161 AN609 Si4682DY
Text: Si4682DY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].
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Original
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Si4682DY
AN609
14-Nov-05
74110
c 4161
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PDF
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78256
Abstract: 4562 mosfet 4562 9373 AN609 Si4567DY SI4567
Text: Si4567DY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].
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Original
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Si4567DY
AN609
14-Nov-05
78256
4562 mosfet
4562
9373
SI4567
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PDF
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14584
Abstract: AN609 Si1553DL
Text: Si1553DL_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].
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Original
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Si1553DL
AN609
14-Nov-05
14584
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PDF
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74116
Abstract: AN609 Si4892DY 607-60
Text: Si4892DY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].
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Original
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Si4892DY
AN609
14-Nov-05
74116
607-60
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PDF
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Untitled
Abstract: No abstract text available
Text: 4 THIS DRAWING IS UNPUBLISHED. COPYRIGHT 2005 2 3 RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. SEPT ,2005- LOC ALL RIGHTS RESERVED. REVISIONS DIST E B P LTR DESCRIPTION E DATE ECR — 05 —01 5561 DWN APVD JMS FWK 14NOV05 NOTES: A SINGLE PACK IN ACCORDANCE WITH AMP SPEC 107- 3275
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OCR Scan
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14NOV05
12SEPT05
RG58C/U,
41A/U,
31MAR2000
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PDF
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Untitled
Abstract: No abstract text available
Text: 4 TH IS DRAWING IS U N P U B LIS H E D . COPYRIGHT 3 RELEASED BY TYCO ELECTRONICS CORPORATION. 2 FOR PUBLICATION A L L RIGHTS RESERVED. LOC D IST AF 50 R E V IS IO N S LTR K1 DESC RIPTIO N DATE 14NOV05 REVISED PER E C R - 0 5 - 0 1 2571 DWN APVD MF GP D D
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OCR Scan
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14NOV05
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PDF
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Untitled
Abstract: No abstract text available
Text: 4 THIS DRAWING IS UNPUBLISHED. COPYRIGHT 2 3 RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. - LOC ALL RIGHTS RESERVED. DIST AJ R E V IS IO N S 6 P LTR DESCRIPTION D D R E V IS E D PER ECO-05-008694 DATE DWN APVD 14NOV05 BM JL D FOLD CENTER CONDUCTOR
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OCR Scan
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14NOV05
ECO-05-008694
MAY2003
21MAY03
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PDF
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Untitled
Abstract: No abstract text available
Text: 4 THIS DRAWING COPYRIGHT IS U N P U B L IS H E D . 2005 BY TYCO 2 3 RELEASED ELECTRONICS CORPORATION. FOR ALL PUBLICATION RIGHTS SEPT ,2 0 0 5 . REVISIONS D IS T RE S ER VED . P LTR NOTES: D A SINGLE PACK IN ACCORDANCE WITH AMP SPEC 107-3275 A 100 TRAY PACK IN ACCORDANCE WITH AMP SPEC 107-3275
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OCR Scan
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29AUG08
31MAR2000
RG59B/U,
140/U
URM90
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PDF
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Untitled
Abstract: No abstract text available
Text: 4 3 THIS DRAWING IS UNPUBLISHED. RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. COPYRIGHT 2 LOC DIST AF 50 ALL RIGHTS RESERVED. R EV IS IO N S LTR P1 1 D C O N T IN U O U S STANDARD '2' -.2 67- REVERSE 4 R E E LIN G O FF TO P OF R EEL W IR E B A R R E L UP
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OCR Scan
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14NOV05
19DEC2002
19DEC2002
31MAR2000
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PDF
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