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    2314 mosfet

    Abstract: Si4892BDY AN609
    Text: Si4892BDY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


    Original     		PDF Si4892BDY AN609 14-Nov-05 2314 mosfet

    Si4892BDY

    Abstract: Si4892DY-T1-E3 Si4892DY Si4892DY-T1
    Text: Specification Comparison Vishay Siliconix Si4892BDY vs. Si4892DY Description: Package: Pin Out: N-Channel, 30-V D-S MOSFET SO-8 Identical Part Number Replacements: Si4892BDY-T1-E3 Replaces Si4892DY-T1-E3 Si4892BDY-T1-E3 Replaces Si4892DY-T1 Summary of Performance:


    Original     		PDF Si4892BDY Si4892DY Si4892BDY-T1-E3 Si4892DY-T1-E3 Si4892DY-T1