15 W RF POWER TRANSISTOR NPN Search Results

15 W RF POWER TRANSISTOR NPN Result Highlights (5)

Part	Manufacturer	Description
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold
TTC022	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini
TTC020	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini
TPCP8515	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PS-8

15 W RF POWER TRANSISTOR NPN Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
J476 Abstract: capacitor j476 NALCO Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF2628 The RF Line 15 W 136-220 M H i RF POWER TRANSISTOR NPN SILICON RF POWER TRANSISTOR NPN SILICON Designed for 12.5 volt VHF large-signal power am plifiers in commercial and industrial FM equipment. • Compact .280 Stud Package	OCR Scan	MRF2628 J476 capacitor j476 NALCO	PDF
NESG260234 Abstract: LLQ2021 NESG260234-T1 NESG260234-T1-AZ Text: NPN SILICON GERMANIUM RF TRANSISTOR NESG260234 NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION 1 W 3-PIN POWER MINIMOLD (34 PKG) FEATURES • This product is suitable for medium output power (1 W) amplification Pout = 30 dBm TYP. @ VCE = 6 V, Pin = 15 dBm, f = 460 MHz	Original	NESG260234 NESG260234-AZ NESG260234-T1 NESG260234 LLQ2021 NESG260234-T1 NESG260234-T1-AZ	PDF
1005 Ic Data Abstract: NESG260234 IC MARKING 1005 1005 TRANSISTOR Text: NPN SILICON GERMANIUM RF TRANSISTOR NESG260234 NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION 1 W 3-PIN POWER MINIMOLD (34 PKG) FEATURES • This product is suitable for medium output power (1 W) amplification Pout = 30 dBm TYP. @ VCE = 6 V, Pin = 15 dBm, f = 460 MHz	Original	NESG260234 NESG260234 NESG260234-AZ NESG260234-T1 NESG260234-T1-AZ PU10547EJ02V0DS LLQ2021 1005 Ic Data IC MARKING 1005 1005 TRANSISTOR	PDF
nec 2501 Abstract: 2501 NEC ic nec 2501 NESG260234 Text: DATA SHEET NPN SILICON GERMANIUM RF TRANSISTOR NESG260234 NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION 1 W 3-PIN POWER MINIMOLD (34 PKG) FEATURES • This product is suitable for medium output power (1 W) amplification PO = 30 dBm TYP. @ VCE = 6 V, Pin = 15 dBm, f = 460 MHz	Original	NESG260234 NESG260234 NESG260234-AZ NESG260234-T1 NESG260234-T1-AZ nec 2501 2501 NEC ic nec 2501	PDF
lc 945 p transistor Abstract: transistor LC 945 lc 945 transistor Text: ERICSSON ^ PTB 20095 15 Watts, 915-960 MHz Cellular Radio RF Power Transistor D escription The 20095 is a class AB, NPN, com mon em itter RF power transistor intended for 25 Vdc operation across the 915 to 960 MHz frequency band. Rated at 15 w atts minimum output power, it may be used for	OCR Scan		PDF
Untitled Abstract: No abstract text available Text: MS1263 RF & MICROWAVE TRANSISTOR UHF MOBILE APPLICATIONS Features • • • • • • 512 MHz 12.5 VOLTS POUT = 15 W MINIMUM GP = 7.8 dB INPUT MATCHED COMMON EMITTER CONFIGURATION DESCRIPTION: The MS1263 is a NPN silicon RF power transistor designed for	Original	MS1263 MS1263 500mA	PDF
Untitled Abstract: No abstract text available Text: MS1262 RF & MICROWAVE TRANSISTOR UHF MOBILE APPLICATIONS Features • • • • • • 512 MHz 12.5 VOLTS POUT = 15 W MINIMUM GP = 7.8 dB INPUT MATCHED COMMON EMITTER CONFIGURATION DESCRIPTION: The MS1262 is a NPN silicon RF power transistor designed for	Original	MS1262 MS1262 500mA	PDF
ferroxcube for ferrite beads 56-590-65 Abstract: VK200-20-4B MRF628 ferroxcube ferrite beads npn 1349 1348 transistor VK20020-4B 56-590-65/3B transistor c 1349 56-590-65-3B Text: MRF628 silicon The RF Line 0.5 W - 470 MHz RF POWER TRANSISTOR NPN SILICON NPN SILICON RF POWER TRANSISTOR . . . designed fo r 5 .0 * 15 V o lt, V H F /U H F large-signal A m p lifie r/M u l tiplier applications in m ilitary and mobile FM equipment. •	OCR Scan	MRF628 VK-200-20-4B ferroxcube for ferrite beads 56-590-65 VK200-20-4B MRF628 ferroxcube ferrite beads npn 1349 1348 transistor VK20020-4B 56-590-65/3B transistor c 1349 56-590-65-3B	PDF
VK200 ferrite choke Abstract: MRF5176 choke vk200 vk200 transistor 3906 vitramon vk200 choke VK200 r.f choke Text: MRF5176 silicon The RF Line 15 W - 400 MHz RF POWER TRANSISTOR NPN SILICON RF POWER TRANSISTOR NPN SILICON . . . designed prim arily for wideband large-signal driver and predriver am plifier stages in the 200 *6 00 M H z frequency range. • Specified 28 V o lt, 4 0 0 M H z Characteristics O utp ut Power = 1 5 Watts	OCR Scan	MRF5176 VK200 ferrite choke MRF5176 choke vk200 vk200 transistor 3906 vitramon vk200 choke VK200 r.f choke	PDF
j 6815 transistor Abstract: 2SC5434 2SC5509 2SC5753 2SC5754 2SC5754-T2 DCS1800 GSM1800 NE5520379A PU10008EJ01V0DS Text: DATA SHEET NPN SILICON RF TRANSISTOR 2SC5754 NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION 0.4 W FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD FEATURES • Ideal for 460 MHz to 2.4 GHz medium output power amplification • PO (1 dB) = 26.0 dBm TYP. @ VCE = 3.6 V, f = 1.8 GHz, Pin = 15 dBm	Original	2SC5754 2SC5754-T2 j 6815 transistor 2SC5434 2SC5509 2SC5753 2SC5754 2SC5754-T2 DCS1800 GSM1800 NE5520379A PU10008EJ01V0DS	PDF
TRANSISTOR J 6815 EQUIVALENT Abstract: 2SC5754-T2 nec k 813 DCS1800 GSM1800 NE5520379A 2SC5434 2SC5509 2SC5753 2SC5754 Text: DATA SHEET NPN SILICON RF TRANSISTOR 2SC5754 NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION 0.4 W FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD FEATURES • Ideal for 460 MHz to 2.4 GHz medium output power amplification • PO (1 dB) = 26.0 dBm TYP. @ VCE = 3.6 V, f = 1.8 GHz, Pin = 15 dBm	Original	2SC5754 2SC5754-T2 TRANSISTOR J 6815 EQUIVALENT 2SC5754-T2 nec k 813 DCS1800 GSM1800 NE5520379A 2SC5434 2SC5509 2SC5753 2SC5754	PDF
transistor marking R57 ghz Abstract: No abstract text available Text: NPN SILICON RF TRANSISTOR NE664M04 / 2SC5754 NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION 0.4 W FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD FEATURES • Ideal for 460 MHz to 2.4 GHz medium output power amplification • PO (1 dB) = 26.0 dBm TYP. @ VCE = 3.6 V, f = 1.8 GHz, Pin = 15 dBm	Original	NE664M04 2SC5754 NE664M04-A 2SC5754-A NE664M04-T2-A 2SC5754-T2-A PU10008EJ01V0DS transistor marking R57 ghz	PDF
TRANSISTOR 2sC2290 Abstract: 2SC2290 1257 transistor Text: 2SC2290 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI 2SC2290 is a class A silicon NPN planar transistor, designed for SSB communications PACKAGE STYLE .500 4L FLG FEATURES: .112x45° • PG = 15 dB min. at 60 W/28.000 MHz • High linear power output	Original	2SC2290 2SC2290 112x45° TRANSISTOR 2sC2290 1257 transistor	PDF
transistor marking R57 ghz Abstract: TRANSISTOR R57 PU10008EJ02V0DS 2SC5434 2SC5509 2SC5753 2SC5754 2SC5754-T2 DCS1800 GSM1800 Text: DATA SHEET NPN SILICON RF TRANSISTOR 2SC5754 NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION 0.4 W FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M04) FEATURES • Ideal for 460 MHz to 2.4 GHz medium output power amplification • PO (1 dB) = 26.0 dBm TYP. @ VCE = 3.6 V, f = 1.8 GHz, Pin = 15 dBm	Original	2SC5754 2SC5754-T2 PU10008EJ02V0DS transistor marking R57 ghz TRANSISTOR R57 PU10008EJ02V0DS 2SC5434 2SC5509 2SC5753 2SC5754 2SC5754-T2 DCS1800 GSM1800	PDF

HF15-28F Abstract: ASI10602 Text: HF15-28F NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .380 4L FLG The ASI HF15-28F is Designed for FEATURES: B .112 x 45° A E • PG = 21 dB min. at 15 W/30 MHz • IMD3 = -30 dBc max. at 15 W PEP • Omnigold Metalization System C Ø.125 NOM.	Original	HF15-28F HF15-28F 84NIMUM ASI10602 ASI10602	PDF
100WPEP Abstract: ASI10608 HF100-28 E270 Text: HF100-28 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI HF100-28 is a class AB common Emitter Transistor Designed for broadband amplifier operations up to 30 MHz. PACKAGE STYLE .500 4L FLG FEATURES: .112x45° A • PG = 15 dB min. at 100 W/30 MHz • High linear power output	Original	HF100-28 HF100-28 112x45° ASI10608 100WPEP ASI10608 E270	PDF
MRF479 Abstract: No abstract text available Text: MOTOROLA SEM ICONDUCTOR TECHNICAL DATA The RF Line 15 W PEP . 15 W (C W )— 3 0 M H z RF POWER TRANSISTOR NPN SILICON RF POWER TRANSISTOR . . . d e s ig n e d p r im a r ily fo r u s e in s in g le s id e b a n d lin e a r a m p lifie r o u tp u t a p p lic a tio n s a n d o th e r c o m m u n ic a tio n s e q u ip m e n t o p e r	OCR Scan	MRF479 MRF479	PDF
BLX14 Abstract: datasheet of ic 555 Text: BLX14 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI BLX14 is Designed for HF and VHF band applications. PACKAGE STYLE .500 4L STUD A .112 x 45° FEATURES: A Ø .630 NOM C • PG = 13 dB min. at 15 W/1.6 MHz • d3 = -40 dB typ. at 15 W (PEP) • Omnigold Metalization System	Original	BLX14 BLX14 datasheet of ic 555	PDF
CD3922 Abstract: No abstract text available Text: CD3922 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI CD3922 is a UHF Communication Power Transistor for Broadband Class A, AB or C Applications. MAXIMUM RATINGS I 15 A V 40 V PDISS 200 W @ TC = 25 OC TJ -65 OC to +200 OC T STG -65 OC to +200 OC PACKAGE STYLE JO-2	Original	CD3922 CD3922	PDF
2N5102 Abstract: No abstract text available Text: 2N5102 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI 2N5102 is a High-power PACKAGE STYLE TO- 60 device for class-C, AM operation in VHF circuits. FEATURES INCLUDE: • POUT = 15 W min. @ 136 MHz. • Common Emitter Package MAXIMUM RATINGS IC 3.3 A	Original	2N5102 2N5102	PDF
071J Abstract: No abstract text available Text: ZPioduoti, Una. J TELEPHONE: 973 376-2922 (212) 227-6005 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 FAX: (973) 378-8960 U.SA MRF233 (SILICON) The R.F Line 15 W - 90 MHz RF POWER TRANSISTOR NPN SILICON RF POWER TRANSISTORS NPN SILICON .designed for 12.5 Volt, mid-band large-signal amplifier applications in industrial and commercial FM equipment operating in the	Original	MRF233 -90MHr, 071J	PDF
MRF654 Abstract: No abstract text available Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF654 The R F Line 15 W 470 MHz RF POWER TRANSISTOR NPN SILICON RF POWER TRANSISTOR N P N S IL IC O N . . . designed fo r 12.5 V o lt UHF large-signal a m p lifie r app licatio n s in in d u stria l and co m m ercia l FM e q u ip m e n t ope ra tin g to 512 MHz.	OCR Scan	MRF654 MRF654	PDF
ASI10608 Abstract: HF125-28 Text: HF125-28 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI HF125-28 is Designed for PACKAGE STYLE .500 4L FLG FEATURES: .112x45° A • PG = 15 dB min. at 100 W/30 MHz • IMD3 = -30 dBc max. at 100 W PEP • Omnigold Metalization System FULL R E L	Original	HF125-28 HF125-28 112x45° ASI10608 ASI10608	PDF
MRF233 Abstract: transistor D 2499 akd n ad transistor K D 2499 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF233 The RF Line 15 W - 90 MHz RF POWER TRANSISTOR NPN SILICON NPN SILICON RF POWER TRANSISTOR . d e s ig n e d fo r 12.5 V o lt, m id -b a n d large-signal a m p lifie r a p p li ca tio n s in in d u s tria l and c o m m e rc ia l FM e q u ip m e n t o p e ra tin g in the	OCR Scan	MRF233 MRF233 transistor D 2499 akd n ad transistor K D 2499	PDF

15 W RF POWER TRANSISTOR NPN Search Results

15 W RF POWER TRANSISTOR NPN Result Highlights (5)

15 W RF POWER TRANSISTOR NPN Datasheets Context Search

J476

NESG260234

1005 Ic Data

nec 2501

lc 945 p transistor

Untitled

Untitled

ferroxcube for ferrite beads 56-590-65

VK200 ferrite choke

j 6815 transistor

TRANSISTOR J 6815 EQUIVALENT

transistor marking R57 ghz

TRANSISTOR 2sC2290

transistor marking R57 ghz

HF15-28F

100WPEP

MRF479

BLX14

CD3922

2N5102

071J

MRF654

ASI10608

MRF233