Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    PU10008EJ01V0DS Search Results

    PU10008EJ01V0DS Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    j 6815 transistor

    Abstract: 2SC5434 2SC5509 2SC5753 2SC5754 2SC5754-T2 DCS1800 GSM1800 NE5520379A PU10008EJ01V0DS
    Text: DATA SHEET NPN SILICON RF TRANSISTOR 2SC5754 NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION 0.4 W FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD FEATURES • Ideal for 460 MHz to 2.4 GHz medium output power amplification • PO (1 dB) = 26.0 dBm TYP. @ VCE = 3.6 V, f = 1.8 GHz, Pin = 15 dBm


    Original
    PDF 2SC5754 2SC5754-T2 j 6815 transistor 2SC5434 2SC5509 2SC5753 2SC5754 2SC5754-T2 DCS1800 GSM1800 NE5520379A PU10008EJ01V0DS

    transistor marking R57 ghz

    Abstract: No abstract text available
    Text: NPN SILICON RF TRANSISTOR NE664M04 / 2SC5754 NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION 0.4 W FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD FEATURES • Ideal for 460 MHz to 2.4 GHz medium output power amplification • PO (1 dB) = 26.0 dBm TYP. @ VCE = 3.6 V, f = 1.8 GHz, Pin = 15 dBm


    Original
    PDF NE664M04 2SC5754 NE664M04-A 2SC5754-A NE664M04-T2-A 2SC5754-T2-A PU10008EJ01V0DS transistor marking R57 ghz