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    150NS Search Results

    150NS Result Highlights (2)

    Part ECAD Model Manufacturer Description Download Buy
    X28C512DM-15 Rochester Electronics LLC EEPROM, 64KX8, 150ns, Parallel, CMOS, CDIP32, HERMETIC SEALED, CERDIP-32 Visit Rochester Electronics LLC Buy
    X28C512JI-15 Rochester Electronics LLC EEPROM, 64KX8, 150ns, Parallel, CMOS, PQCC32, PLASTIC, LCC-32 Visit Rochester Electronics LLC Buy
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    150NS Price and Stock

    Lumileds L150-NSC15030000S0

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    DigiKey L150-NSC15030000S0 Digi-Reel 19,985 1
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    Mouser Electronics L150-NSC15030000S0 5,369
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    New Advantage Corporation L150-NSC15030000S0 8,000 1
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    Lumileds L150-NSC15006000S0

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    Bel Power Solutions SQ24S03150-NS00

    DC DC CONVERTER 15V 50W
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    Bel Power Solutions ASQ24S03150-NS00

    DC DC CONVERTER 15V 45W
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    Master Electronics ASQ24S03150-NS00
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    Vishay Thin Film D55342H07B150NSWS

    D55342H 50PPM 1206 150K 10% S WS
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    Find more 150NS price and stock on Findchips.com

    150NS Datasheets (18)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    150NS10 Naina Semiconductor Rectifier Diode, Standard Rectifier Diode, Current IF=150A Original PDF
    150NS100 Naina Semiconductor Rectifier Diode, Standard Rectifier Diode, Current IF=150A Original PDF
    150NS120 Naina Semiconductor Rectifier Diode, Standard Rectifier Diode, Current IF=150A Original PDF
    150NS140 Naina Semiconductor Rectifier Diode, Standard Rectifier Diode, Current IF=150A Original PDF
    150NS160 Naina Semiconductor Rectifier Diode, Standard Rectifier Diode, Current IF=150A Original PDF
    150NS20 Naina Semiconductor Rectifier Diode, Standard Rectifier Diode, Current IF=150A Original PDF
    150NS40 Naina Semiconductor Rectifier Diode, Standard Rectifier Diode, Current IF=150A Original PDF
    150NS60 Naina Semiconductor Rectifier Diode, Standard Rectifier Diode, Current IF=150A Original PDF
    150NS80 Naina Semiconductor Rectifier Diode, Standard Rectifier Diode, Current IF=150A Original PDF
    150NSR10 Naina Semiconductor Rectifier Diode, Standard Rectifier Diode, Current IF=150A Original PDF
    150NSR100 Naina Semiconductor Rectifier Diode, Standard Rectifier Diode, Current IF=150A Original PDF
    150NSR120 Naina Semiconductor Rectifier Diode, Standard Rectifier Diode, Current IF=150A Original PDF
    150NSR140 Naina Semiconductor Rectifier Diode, Standard Rectifier Diode, Current IF=150A Original PDF
    150NSR160 Naina Semiconductor Rectifier Diode, Standard Rectifier Diode, Current IF=150A Original PDF
    150NSR20 Naina Semiconductor Rectifier Diode, Standard Rectifier Diode, Current IF=150A Original PDF
    150NSR40 Naina Semiconductor Rectifier Diode, Standard Rectifier Diode, Current IF=150A Original PDF
    150NSR60 Naina Semiconductor Rectifier Diode, Standard Rectifier Diode, Current IF=150A Original PDF
    150NSR80 Naina Semiconductor Rectifier Diode, Standard Rectifier Diode, Current IF=150A Original PDF

    150NS Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    X28LV010

    Abstract: No abstract text available
    Text: X28LV010 1M 128K x 8 Bit 3.3 Volt, Byte Alterable E2PROM FEATURES DESCRIPTION • Access Time: 70, 90, 120, 150ns • Simple Byte and Page Write —Single 3.3V±10% supply —No external high voltages or VPP control circuits —Self-timed • no erase before write


    Original     		PDF X28LV010 150ns X28LV010

    BS62UV256

    Abstract: BS62UV256DC BS62UV256PC BS62UV256PI BS62UV256SC BS62UV256SI BS62UV256TC BS62UV256TI
    Text: Ultra Low Power CMOS SRAM 32K X 8 bit BS62UV256 Pb-Free and Green package materials are compliant to RoHS „ FEATURES „ DESCRIPTION y Wide VCC low operation voltage : 1.8V ~ 3.6V y Ultra low power consumption : VCC = 2.0V Operation current : 15mA Max. at 150ns


    Original     		PDF BS62UV256 150ns 100ns BS62UV25rature R0201-BS62UV256 BS62UV256 BS62UV256DC BS62UV256PC BS62UV256PI BS62UV256SC BS62UV256SI BS62UV256TC BS62UV256TI

    IXXH100N60B3

    Abstract: 100n60
    Text: Advance Technical Information XPTTM 600V GenX3TM IXXH100N60B3 VCES IC110 VCE sat tfi(typ) Extreme Light Punch Through IGBT for 10-30 kHz Switching = = ≤ = 600V 100A 1.80V 150ns TO-247 AD Symbol Test Conditions VCES VCGR TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1MΩ


    Original     		PDF IXXH100N60B3 IC110 150ns O-247 100N60B3 0-10-A IXXH100N60B3 100n60

    MAX4182

    Abstract: No abstract text available
    Text: * MAX4182 LARGE-SIGNAL RESPONSE AVCL=+2 * 4181LTRA.CIR XAR1 3 4 5 2 1 MAX4182 * +IN -IN VCC VEE OUT VCC 5 0 5V VEE 2 0 -5V VIN 3 0 PULSE -1V 1V 20ns 4N 4N 50nS 100ns RF 1 4 2.4K R1 4 0 2.4k RL 1 0 1K .OPTIONS RELTOL=.01 .TRAN 1nS 150nS .PROBE .LIB MAX4182.FAM


    Original     		PDF MAX4182 4181LTRA MAX4182 100ns) 150nS

    HT23C010

    Abstract: No abstract text available
    Text: HT23C010 CMOS 128K´8-Bit Mask ROM Features • · · Operating voltage: 2.7V~5.5V Low power consumption - Operation: 25mA max. V CC=5V 10mA max. (VCC=3V) - Standby: 30mA max. (V CC=5V) 10mA max. (VCC=3V) Access time: 150ns max. (VCC=5V) 250ns max. (VCC=3V)


    Original     		PDF HT23C010 150ns 250ns 28-pin 32-pin HT23C010

    HT23C128

    Abstract: No abstract text available
    Text: HT23C128 CMOS 16K´8-Bit Mask ROM Features • · · Operating voltage: 2.7V~5.5V Low power consumption - Operation: 25mA max. V CC=5V 10mA max. (VCC=3V) - Standby: 30mA max. (V CC=5V) 10mA max. (VCC=3V) Access time: 150ns max. (VCC=5V) 250ns max. (VCC=3V)


    Original     		PDF HT23C128 150ns 250ns 28-pin HT23C128

    Untitled

    Abstract: No abstract text available
    Text: WF512K32-XXX5 512Kx32 5V NOR FLASH MODULE SMD 5962-94612* FEATURES  Access Times of 60, 70, 90, 120, 150ns  Low Power CMOS  Packaging  Embedded Erase and Program Algorithms • 66 pin, PGA Type, 1.075" square, Hermetic Ceramic HIP


    Original     		PDF WF512K32-XXX5 512Kx32 150ns WF512K32-XG2UX5 WF512K32N-XH1X5 WF512K32-XG4TX5

    Untitled

    Abstract: No abstract text available
    Text: UM23V8001 1,048,576 X 8 BIT WIDE VOLTAGE RANGE CMOS MASK ROM Features • 1,048,576 x 8 bit organization ■ Wide power supply range: + 2.7V to +5.5V ■ Access times: 150ns m ax. /VCC = 5V 250ns (m ax.)/VCC = 3V ■ Current: Operating: 50mA (m ax.)/VCC = 5V


    OCR Scan     		PDF UM23V8001 150ns 250ns 32-pin UM23V8001 100pF UM23V8001M

    TMM24256P

    Abstract: AF150 TC54256P TTL af tc54256ap
    Text: TOSHIBA MOS MEMORY PRODOCTS TC54256AP/AF-150 DESCRIPTION The TC54256AP/AF is a 32,768 wo r d x 8 bit one time programmable read only memory, and molded in a 28 pin plastic package. The TC54256AP/AF's access time is 150ns and has low power standby mode which reduces the power dissipation without increasing access


    OCR Scan     		PDF TC54256AP/AF-150 TC54256AP/AF 150ns TC57256AD 30mA/6 150ns TC54256AP TMM24256P AF150 TC54256P TTL af

    ta25 du14

    Abstract: No abstract text available
    Text: ST1641OOOAG1 -xxLVG 144-PIN SO-DIMMS 1M X 64 Bits DRAM SO-DIMM Memory Module FEATURES • GENERAL DESCRIPTION Performance range: *R A C *C A C ‘ rc STI. •-60LVG 60ns 15ns 110ns STI. •-70LVG 70ns 20ns 130ns STI. •-80LVG 80ns 20ns 150ns The Simple Technology STI641000AG1 is a 1M x 64 bits


    OCR Scan     		PDF ST1641OOOAG1 144-PIN STI641000AG1 44-pin -60LVG ta25 du14

    jeida+dram+88+pin

    Abstract: jeida 88 pin jeida dram 88 pin
    Text: STI321000C1 -xxVx 88-PIN CARDS 1M X 32 DRAM Card FEATURES • Performance range: ^RAC ^CAC *RC STI321000C1-60Vx 60ns 15ns 110ns STI32100OC1-7OVx 70ns 18ns 130ns STI321000C1-80Vx 80ns 20ns 150ns The Simple Technology STI321000C1 is a 1M bit x 32 Dynamic RAM high density memory card. The Simple Technology


    OCR Scan     		PDF STI321000C1 STI321000C1-60Vx STI32100OC1-7OVx STI321000C1-80Vx 110ns 130ns 150ns 88-PIN jeida+dram+88+pin jeida 88 pin jeida dram 88 pin

    Untitled

    Abstract: No abstract text available
    Text: STI338000 72-PIN SIMMS 8M X 33 Bits DRAM SIMM Memory Module FEATURES • GENERAL DESCRIPTION Performance range: *RAC ^CAC I rc STI338000-60 60ns 15ns 110ns STI338000-70 70ns 20ns 130ns STI338000-80 80ns 20ns 150ns The Simple Technology STI338000 is a 8M x 33 bits Dynamic


    OCR Scan     		PDF STI338000 STI338000-60 STI338000-70 STI338000-80 110ns 130ns 150ns 72-PIN STI338000

    Untitled

    Abstract: No abstract text available
    Text: STI32256 72-PIN SIMMS 256K X 32 DRAM SIMM Memory Module FEATURES • GENERAL DESCRIPTION Performance range: ^RAC ^CAC ^RC STI32256-60 60ns 15ns 110ns STI32 2 56-70 70ns 20ns 130ns STI32256-80 80ns 20ns 150ns The Simple Technology STI32256 is a 256K bit x 32 Dynamic


    OCR Scan     		PDF STI32256 STI32256-60 STI32 STI32256-80 110ns 130ns 150ns 72-PIN STI32256

    EXEL MICROELECTRONICS

    Abstract: XLS48C64-200 XLS48C64-250 XLS48C64C-150
    Text: XL48C64 M IC R O E L E C T R O N IC S . IN C FEATURES • ■ ■ ■ ■ ■ ■ ■ 8192 x 8 Bit E2PRO M Single 5-Volt Supply Fast Data Access: 150ns Low Power Requirements: - 100/u.a Standby - 100/u.a Quiescent Automatic Write Cycle Time-out Foolproof False Write


    OCR Scan     		PDF XL48C64 150ns 100/u XL48C64 21002C/ EXEL MICROELECTRONICS XLS48C64-200 XLS48C64-250 XLS48C64C-150

    3A73

    Abstract: No abstract text available
    Text: 1M BIT 65,536 W O R D x 16 BIT C M O S M A S K R O M DESCRIPTION The TC531024P/F is a 1,048,576 bits read only memory organized as 65,536 words by 16 bits. The TC531024P/F is fabricated using Toshiba’s advanced CMOS technology which provides the high speed and low power features with access time of 120ns / 150ns, an operation current of 40mA at


    OCR Scan     		PDF TC531024P/F 120ns 150ns, 600mil 40pin 525mil 3A73

    hm62256

    Abstract: No abstract text available
    Text: HM62256 Series 32768-word x 8-bit High Speed CMOS Static RAM FEATURES H M 6 2 2 5 6 P S eries High Speed: Fast Access Time 85/100/120/150ns max. Low Power Standby and Low Power Operation; Standby: 200/iW (typ)/10/LiW (typ) (L-version), Operation: 40mW (typ.) ( f = 1MHz)


    OCR Scan     		PDF HM62256 32768-word 85/100/120/150ns 200/iW /10/LiW 2256P

    Untitled

    Abstract: No abstract text available
    Text: Super Fast Recovery Diode Diode Module mtm D200LC40B OUTLINE 400V 200A Feature •*a a u m • H igh lo R ating • trr=150ns • trr= 150ns • Isolation ty p e Main Use • S e m ic o n d u c to r P roce ss M a c h in e • H igh p o w e r source • FA


    OCR Scan     		PDF D200LC40B 150ns J533-1)

    6264alp

    Abstract: 6264ALSP-10
    Text: HM6264A Series 8192-word x 8-bit High Speed CMOS Static RAM i FEATURES H M 6264A P Series » Low Power Standby Standby: 0.1mW typ. 10/LtW (typ.) L-/LL-version Operating: 15mW/MHz (typ.) 100ns/120rts/150ns (max.) Low Power Operation • Fast access Time •


    OCR Scan     		PDF HM6264A 8192-word 10/LtW 15mW/MHz 100ns/120rts/150ns DP-28) HM6264ASP 6264AP-10 HM6264AP-12 HM6264AP-15 6264alp 6264ALSP-10

    2SK868

    Abstract: 2SK868A SC-65 C1624
    Text: P o w e r F-MOS FET 2SK868, 2SK 868A 2 S K 8 6 8 , 2S K 8 6 8 A Silicon N-channel Power F-M O S FET P ackage Dim ensions • Features • Low ON resistance R d s on : R d s (on) = 0 .2 fl (typ.) • High switching rate : tf= 150ns (typ.) • No secondary breakdown


    OCR Scan     		PDF 2SK868, 2SK868A 150ns 2SK868 2SK868A SC-65 C1624

    HM472114AP-2

    Abstract: HM472114A HM472114A-2 2114L HM472114A-1 HM472114AP-1 HM472114AP2
    Text: H M 472114A -1 ,H M 4 7 2 1 1 4 A -2 , H M 472114A P-1 ,H M 4 7 2 1 1 4 A P -2 1 0 2 4 -word X 4 - bit Static Random Access M em ory Fast Access T i m e . H M 4 72 114 A -1 150ns max. H M 4 7 2 1 1 4 A -2 200ns (m ax.)


    OCR Scan     		PDF HM472114A-1 HM472114A-2, HM472114AP-1 HM472114AP-2 1024-word HM472114A-1 150ns HM472114A-2 200ns 200mW HM472114AP-2 HM472114A 2114L HM472114AP-1 HM472114AP2

    Untitled

    Abstract: No abstract text available
    Text: MICROELECTRONICS XL28C64B E x txH o n ctin? 8K X 8 CMOS Electrically Erasable PROM 5ms Nonvolatile Write Cycle PIN C O N F IG U R A TIO N S F E A TU R ES • Fast Read A ccess T im es — 120ns, 150ns, 200ns and 250ns ■ Low C M O S P o w er C onsum ption


    OCR Scan     		PDF XL28C64B 150pA 120ns, 150ns, 200ns 250ns 120ns 100pF

    Untitled

    Abstract: No abstract text available
    Text: EDI8832C E lectronic Declgn« In c.« High Performance 256K Monolithic SRAM 32Kx8 Static RAM CMOS, Monolithic Features 1.2. 1. 32Kx8 bit CMOS Static Random Access Memory • Access Times 70,85,100,120 and 150ns • Data Retention Function EDI8832LP only


    OCR Scan     		PDF EDI8832C 32Kx8 150ns EDI8832LP EDI8832C 144bit 32Kx8. EDI8832C) EDI8832LP70LB

    Untitled

    Abstract: No abstract text available
    Text: XL28C16A 2K X 8 CMOS Electrically Erasable PROM FEATURES PIN CONFIGURATION 24 Pin PDIP Type "P" Package • Fast Read Access Times — 100ns, 150ns, 200ns, 250ns ■ Low CMOS Power Consumption — 30mA active max. — 100jjA standby (max.) A7 Ae Ab A* a3


    OCR Scan     		PDF XL28C16A 100ns, 150ns, 200ns, 250ns 100jjA XLE28C16A) 000227b 7A2R014

    62256LP-12

    Abstract: AKM62256-10 62256FP-12T 62256P
    Text: AK M 62256 Series 32768-word x 8-bit High Speed CMOS Static RAM • • FEATURES High Speed: Fast Access Time 85/100/120/150ns max. • Low Power Standby and Low Power Operation; • Standby: 200^tW {t y p ) /1 0/uW (typ) (L-version), Operation: 40mW (typ.) (f = 1MHz)


    OCR Scan     		PDF 32768-word 85/100/120/150ns 62256P DP-28) 62256FP M62256P-8 AKM62256 62256LP-12 AKM62256-10 62256FP-12T