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    1SS187

    Abstract: No abstract text available
    Text: RECTRON 1SS187 SEMICONDUCTOR TECHNICAL SPECIFICATION SOT-23 SWITCHING DIODE FEATURES * Power dissipation P D: 150 mW Tamb=25OC * Forward current I F: 100 mA * Reverse voltage VR: 80 V * Operating and storage junction temperature range TJ,Tstg: -55OCto+150OC


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    1SS187 OT-23 -55OCto 150OC OT-23 MIL-STD-202E 1SS187 PDF

    1SS193

    Abstract: No abstract text available
    Text: RECTRON 1SS193 SEMICONDUCTOR TECHNICAL SPECIFICATION SOT-23 SWITCHING DIODE FEATURES * Power dissipation P D: 150 mW Tamb=25OC * Forward current I F: 100 mA * Reverse voltage VR: 80 V * Operating and storage junction temperature range TJ,Tstg: -55OCto+150OC


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    1SS193 OT-23 -55OCto 150OC OT-23 MIL-STD-202E 1SS193 PDF

    1SS190

    Abstract: No abstract text available
    Text: RECTRON 1SS190 SEMICONDUCTOR TECHNICAL SPECIFICATION SOT-23 SWITCHING DIODE FEATURES * Power dissipation P D: 150 mW Tamb=25OC * Forward current I F: 100 mA * Reverse voltage VR: 80 V * Operating and storage junction temperature range TJ,Tstg: -55OCto+150OC


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    1SS190 OT-23 -55OCto 150OC OT-23 MIL-STD-202E 1SS190 PDF

    TRANZORB

    Abstract: HGTD8P50G1 HGTD8P50G1S
    Text: HGTD8P50G1, HGTD8P50G1S S E M I C O N D U C T O R 8A, 500V P-Channel IGBTs March 1997 Features Package JEDEC TO-251AA • 8A, 500V • 3.7V VCE SAT • Typical Fall Time - 1800ns EMITTER COLLECTOR GATE • High Input Impedance (FLANGE) COLLECTOR • TJ = +150oC


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    HGTD8P50G1, HGTD8P50G1S O-251AA 1800ns 150oC O-252AA HGTD8P50G1 HGTD8P50G1S 1-800-4-HARRIS TRANZORB PDF

    Untitled

    Abstract: No abstract text available
    Text: Aluminum Electrolytic Capacitors NRE-WX Series ULTRA HIGH TEMPERATURE, RADIAL LEADS, POLARIZED ALUMINUM ELECTROLYTIC CAPACITORS RoHS Compliant includes all homogeneous materials FEATURES • HIGH TEMPERATURE 150OC *See Part P Number N b System S for f Details


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    150OC 50Vdc C/120Hz 120Hz 10KHz 100KHz PDF

    Untitled

    Abstract: No abstract text available
    Text: FCU900N60Z N-Channel SuperFET II MOSFET 600 V, 4.5 A, 900 mΩ Description Features • 675 V @ TJ = 150oC SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction SJ MOSFET family that is utilizing charge balance technology for outstanding low on-resistance


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    FCU900N60Z 150oC PDF

    Untitled

    Abstract: No abstract text available
    Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . Capacitors- High Temperature 150oC , High Reliability SMD Tantalum Molded Chip AND TEC I INNOVAT O L OGY TH3 Series Tantalum N HN CAPACITORS O 19 62-2012 TH3 - High Temperature Molded Solid Tantalum Chip Capacitors


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    150oC) AEC-Q200 VMN-PT9193-1208 PDF

    Untitled

    Abstract: No abstract text available
    Text: Aluminum Electrolytic Capacitors NRE-WX Series ULTRA HIGH TEMPERATURE, RADIAL LEADS, POLARIZED ALUMINUM ELECTROLYTIC CAPACITORS RoHS Compliant FEATURES includes all homogeneous materials • HIGH TEMPERATURE 150OC *See Part Number System for Details • CAPACITANCE VALUES UP TO 1,000µF


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    150OC 50Vdc PDF

    Untitled

    Abstract: No abstract text available
    Text: MCC MPSA42   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# TM Micro Commercial Components THRU MPSA43 Features NPN Silicon High Through Hole Package 150oC Junction Temperature Epoxy meets UL 94 V-0 flammability rating


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    MPSA42 MPSA43 150oC 625mW MPSA42 ----A42 MPSA43 ----MPSA43 PDF

    Untitled

    Abstract: No abstract text available
    Text: MCC   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# TM Micro Commercial Components MMBTA44 Features NPN Silicon High l Through Hole Package l 150oC Junction Temperature Voltage Transistor l Power dissipation : 0.35 W


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    MMBTA44 150oC 350mW OT-23 OT-23-3L, perature-------------------------------55 50mAdc, 10mAdc, 20Vdc, 10mAdc PDF

    Untitled

    Abstract: No abstract text available
    Text: MCC Micro Commercial Components Features PNP Silicon High Through Hole Package 150oC Junction Temperature x MPSA94   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# TM Case Material: Molded Plastic.


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    MPSA94 150oC 625mW PDF

    MMBTA44 3d

    Abstract: No abstract text available
    Text: MCC   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# TM Micro Commercial Components MMBTA44 Features NPN Silicon High l Through Hole Package l 150oC Junction Temperature Voltage Transistor l Power dissipation : 0.35 W


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    MMBTA44 150oC 350mW OT-23 OT-23-3L, MMBTA44 3d PDF

    marking eh

    Abstract: No abstract text available
    Text: MCC BCW66H   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features NPN Small l Ideally Suited for Automatic Insertion l 150oC Junction Temperature l Low Current, Low Voltage l Epitaxial Planar Die Construction


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    BCW66H 330mW OT-23 150oC OT-23, MIL-STD-202, 100MHz marking eh PDF

    pin configuration pnp transistor BC558

    Abstract: BC557C pin configuration pnp transistor BC557 pin configuration transistor bc558 BC557A bc557 transistor BC556b BC557C polarity bc558 transistor c 557B
    Text: MCC BC556,B BC557,A,B,C BC558,B   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# TM Micro Commercial Components Features PNP Silicon l Through Hole Package l 150oC Junction Temperature Amplifier Transistor


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    BC556 BC557 BC558 625mW 150oC pin configuration pnp transistor BC558 BC557C pin configuration pnp transistor BC557 pin configuration transistor bc558 BC557A transistor BC556b BC557C polarity transistor c 557B PDF

    transistor marking s79

    Abstract: No abstract text available
    Text: MCC BCW68H   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features PNP Small l Ideally Suited for Automatic Insertion l 150oC Junction Temperature l Low Current, Low Frequency l Epitaxial Planar Die Construction


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    BCW68H 330mW OT-23 150oC OT-23, MIL-STD-202, 100MHZ transistor marking s79 PDF

    bc557 and application

    Abstract: No abstract text available
    Text: MCC BC556,B BC557,A,B,C BC558,B   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# TM Micro Commercial Components Features PNP Silicon Through Hole Package 150oC Junction Temperature x x Case Material: Molded Plastic.


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    BC556 BC557 BC558 150oC 625mW bc557 and application PDF

    2N3819 equivalent

    Abstract: 2N5247 2N3971 2N4393 2N5640 2n5484 jfet 2N4341 2N5485 2N5640 equivalent 2n5952 equivalent
    Text: P-Channel Power MOSFET’s Part No. Drain-Source Min. On-State Typ. Static DS Brkdwn. Voltg. DS Current Resistance BV DSS V ID(ON)(mA) J174 30.00 1.00 85 J175 30.00 .50 125 Operating Temperature: -55 o C to 150oC Part No. RDS(ON)(Ω) Drain-Source Min. On-State


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    150oC 2N4858 2N4858A 2N4393 2N4859 2N4860 2N4860A 2N4861 2N3819 equivalent 2N5247 2N3971 2N4393 2N5640 2n5484 jfet 2N4341 2N5485 2N5640 equivalent 2n5952 equivalent PDF

    Untitled

    Abstract: No abstract text available
    Text: MCC   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# TM Micro Commercial Components MPSA44 Features NPN Silicon High Through Hole Package 150oC Junction Temperature Epoxy meets UL 94 V-0 flammability rating


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    MPSA44 150oC 625mW PDF

    transistor bc548 bp

    Abstract: transistor 548c BC546A transistor bc547 applications bc546c bc548 Transistor 547c
    Text: MCC BC546A/B/C BC547A/B/C BC548A/B/C   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# TM Micro Commercial Components Features NPN Silicon Through Hole Package 150oC Junction Temperature x x


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    BC546A/B/C BC547A/B/C BC548A/B/C 625mW 150oC transistor bc548 bp transistor 548c BC546A transistor bc547 applications bc546c bc548 Transistor 547c PDF

    BC557C

    Abstract: transistor bc558 features
    Text: MCC BC556,B BC557,A,B,C BC558,B   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# TM Micro Commercial Components Features PNP Silicon Through Hole Package 150oC Junction Temperature x x • Amplifier Transistor


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    BC556 BC557 BC558 625mW 150oC BC557C transistor bc558 features PDF

    sot-23 marking code .S79

    Abstract: BCX70G BCX70H marking ag s79 marking code transistor marking s79
    Text: MCC BCX70G THRU BCX70K   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features NPN Small l Ideally Suited for Automatic Insertion l 150oC Junction Temperature l Low Current, Low Voltage l For Switching and AF Amplifier applications.


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    BCX70G BCX70K 250mW OT-23 150oC OT-23, MIL-STD-202, BCX70H BCX70J sot-23 marking code .S79 BCX70H marking ag s79 marking code transistor marking s79 PDF

    Untitled

    Abstract: No abstract text available
    Text: MCC   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# TM Micro Commercial Components 2N5401 HDWXUHV z z • PNP Silicon Through Hole Package 150oC Junction Temperature Case Material: Molded Plastic. UL Flammability


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    2N5401 625mW 150oC PDF

    80 L hall effect sensor 3 pin

    Abstract: BIPOLAR HALL EFFECT SWITCH, SOT23
    Text: AH175 Hall Effect Latch For High Temperature „ Features „ General Description - Bipolar Hall effect latch sensor - 3.5V to 20V DC operation voltage - Open collector pre-driver - 25mA output sink current - Chip power reverse-connection protection - Operating temperature: -40oC~150oC


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    AH175 -40oC 150oC AH175 80 L hall effect sensor 3 pin BIPOLAR HALL EFFECT SWITCH, SOT23 PDF

    Untitled

    Abstract: No abstract text available
    Text: MCC MPSA42 THRU   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# TM Micro Commercial Components MPSA43 Features NPN Silicon High Through Hole Package 150oC Junction Temperature Epoxy meets UL 94 V-0 flammability rating


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    MPSA42 MPSA43 625mW 150oC MPSA42 ----A42 MPSA43 ----MPSA43 PDF