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    HGTD8P50G1S Price and Stock

    Rochester Electronics LLC HGTD8P50G1S

    8A, 500V P-CHANNEL IGBT
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey HGTD8P50G1S Bulk 381
    • 1 -
    • 10 -
    • 100 -
    • 1000 $0.79
    • 10000 $0.79
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    Intersil Corporation HGTD8P50G1S

    INSULATED GATE BIPOLAR TRANSISTOR, 12A I(C), 500V V(BR)CES, P-CHANNEL, TO-252AA
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components HGTD8P50G1S 143
    • 1 $2.5
    • 10 $2.5
    • 100 $1.25
    • 1000 $1.25
    • 10000 $1.25
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    Harris Semiconductor HGTD8P50G1S

    8A, 500V P-Channel IGBT '
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Rochester Electronics HGTD8P50G1S 6,865 1
    • 1 $0.7583
    • 10 $0.7583
    • 100 $0.7128
    • 1000 $0.6446
    • 10000 $0.6446
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    HGTD8P50G1S Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    HGTD8P50G1S Harris Semiconductor 8A, 500V P-Channel IGBT Original PDF
    HGTD8P50G1S Intersil 8A, 500V P-Channel IGBTs Original PDF
    HGTD8P50G1S Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF

    HGTD8P50G1S Datasheets Context Search

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    TRANZORB

    Abstract: HGTD8P50G1 HGTD8P50G1S
    Text: HGTD8P50G1, HGTD8P50G1S S E M I C O N D U C T O R 8A, 500V P-Channel IGBTs March 1997 Features Package JEDEC TO-251AA • 8A, 500V • 3.7V VCE SAT • Typical Fall Time - 1800ns EMITTER COLLECTOR GATE • High Input Impedance (FLANGE) COLLECTOR • TJ = +150oC


    Original     		PDF HGTD8P50G1, HGTD8P50G1S O-251AA 1800ns 150oC O-252AA HGTD8P50G1 HGTD8P50G1S 1-800-4-HARRIS TRANZORB

    G8P50G

    Abstract: tranzorb diode P channel IGBT tranzorb 400v TA49015 TRANZORB HGTD8P50G1 HGTD8P50G1S HGTD8P50G1S9A
    Text: HGTD8P50G1, HGTD8P50G1S 8A, 500V P-Channel IGBTs March 1997 Features Package JEDEC TO-251AA • 8A, 500V • 3.7V VCE SAT • Typical Fall Time - 1800ns EMITTER COLLECTOR GATE • High Input Impedance (FLANGE) COLLECTOR • TJ = +150oC Description JEDEC TO-252AA


    Original     		PDF HGTD8P50G1, HGTD8P50G1S O-251AA 1800ns 150oC O-252AA HGTD8P50G1 HGTD8P50G1S G8P50G tranzorb diode P channel IGBT tranzorb 400v TA49015 TRANZORB HGTD8P50G1S9A

    tranzorb diode

    Abstract: G8P50G TRANZORB P channel IGBT HGTD8P50G1S HGTD8P50G1
    Text: HGTD8P50G1, HGTD8P50G1S S E M I C O N D U C T O R 8A, 500V P-Channel IGBTs May 1996 Features Package JEDEC TO-251AA • 8A, 500V • 3.7V VCE SAT • Typical Fall Time - 1800ns EMITTER COLLECTOR GATE • High Input Impedance (FLANGE) COLLECTOR • TJ = +150oC


    Original     		PDF HGTD8P50G1, HGTD8P50G1S O-251AA 1800ns 150oC O-252AA HGTD8P50G1 HGTD8P50G1S 1-800-4-HARRIS tranzorb diode G8P50G TRANZORB P channel IGBT

    G8P50G

    Abstract: TA49015 P channel IGBT
    Text: HGTD8P50G1, HGTD8P50G1S HARRIS S E M I C O N D U C T O R 8A, 500V P-Channel IGBTs April 1995 Features Package JEDEC TO-251AA • 8A, 500V • 3.7V VCE SAT EMITTER COLLECTOR GATE • Typical Fall Time - 1800ns • High Input Im pedance (FLANG E) COLLECTOR


    OCR Scan     		PDF HGTD8P50G1, HGTD8P50G1S O-251AA 1800ns HGTD8P50G1 HGTD8P50G1S G8P50G TA49015 P channel IGBT

    EM- 546 motor

    Abstract: G8P50G 2S2A
    Text: HGTD8P50G1, HGTD8P50G1S HARRIS S E M I C O N D U C T O R 8A, 5 0 0 V P - C h a n n e l I G B T s March 1997 Features Pa ckage JEDEC TO-251 AA • 8A, s o o v • 3.7V V CE SAT EMITTER COLLE CTO R GATE • T y p ic a l Fall T i m e - 1 8 0 0 n s • H ig h I n p u t I m p e d a n c e


    OCR Scan     		PDF HGTD8P50G1, HGTD8P50G1S O-251 HGTD8P50G1 TD8P50G 1-800-4-H EM- 546 motor G8P50G 2S2A

    Untitled

    Abstract: No abstract text available
    Text: HGTD8P50G1, HGTD8P50G1S H A R R IS S E M I C O N D U C T O R 8A, 500V P-Channel IGBTs March 1997 Features Package JEDEC TO-251AA • 8A, 500V • 3.7V V ce sat EMITTER COLLECTOR GATE • Typical Fall Time - 1800ns • High Input Impedance (FLANGE) COLLECTOR


    OCR Scan     		PDF HGTD8P50G1, HGTD8P50G1S O-251AA 1800ns O-252AA HGTD8P50G1 HGTD8P50G1S T0-252AA

    TRANSISTOR BIPOLAR 400V 20A

    Abstract: igbt 1000v 10A P-Channel IGBT igbt 500V 15A igbt 40A 600V P-CHANNEL 400V 15A N channel 600v 20a IGBT igbt 400V 40A igbt 400V 20A 400V P-Channel IGBT
    Text: — MCT/IGBT/DIODES 3 INSULATED GATE BIPOLAR TRANSISTORS PAGE SELECTION G U ID E .


    OCR Scan     		PDF HGTD6N40E1, HGTD6N40E1S, HGTD6N50E1, HGTD6N50E1S HGTP6N40E1D, HGTP6N50E1D HGTP10N40C1, HGTH12N40C1, HGTP10N40C1D, HGTP10N40E1D, TRANSISTOR BIPOLAR 400V 20A igbt 1000v 10A P-Channel IGBT igbt 500V 15A igbt 40A 600V P-CHANNEL 400V 15A N channel 600v 20a IGBT igbt 400V 40A igbt 400V 20A 400V P-Channel IGBT

    equivalent data book of 10N60 mosfet

    Abstract: MC14016CP GD4511 an-6466 CX 2859 SMD 74AC14 spice 6120* harris HCF4018be 7028 SMD Transistor spice irfbc40
    Text: $5.00 S E M I C O N D U C T O R TECHNICAL ASSISTANCE Harris Marketing Support Services HMSS , 1-800-4HARRIS HMSS provides world-class service to customers requiring information on all products offered by Harris Semiconductor. Ask Harris Marketing Support Services for answers concerning:


    OCR Scan     		PDF 1-800-4HARRIS equivalent data book of 10N60 mosfet MC14016CP GD4511 an-6466 CX 2859 SMD 74AC14 spice 6120* harris HCF4018be 7028 SMD Transistor spice irfbc40