TRANZORB
Abstract: HGTD8P50G1 HGTD8P50G1S
Text: HGTD8P50G1, HGTD8P50G1S S E M I C O N D U C T O R 8A, 500V P-Channel IGBTs March 1997 Features Package JEDEC TO-251AA • 8A, 500V • 3.7V VCE SAT • Typical Fall Time - 1800ns EMITTER COLLECTOR GATE • High Input Impedance (FLANGE) COLLECTOR • TJ = +150oC
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Original
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PDF
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HGTD8P50G1,
HGTD8P50G1S
O-251AA
1800ns
150oC
O-252AA
HGTD8P50G1
HGTD8P50G1S
1-800-4-HARRIS
TRANZORB
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G8P50G
Abstract: tranzorb diode P channel IGBT tranzorb 400v TA49015 TRANZORB HGTD8P50G1 HGTD8P50G1S HGTD8P50G1S9A
Text: HGTD8P50G1, HGTD8P50G1S 8A, 500V P-Channel IGBTs March 1997 Features Package JEDEC TO-251AA • 8A, 500V • 3.7V VCE SAT • Typical Fall Time - 1800ns EMITTER COLLECTOR GATE • High Input Impedance (FLANGE) COLLECTOR • TJ = +150oC Description JEDEC TO-252AA
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Original
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PDF
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HGTD8P50G1,
HGTD8P50G1S
O-251AA
1800ns
150oC
O-252AA
HGTD8P50G1
HGTD8P50G1S
G8P50G
tranzorb diode
P channel IGBT
tranzorb 400v
TA49015
TRANZORB
HGTD8P50G1S9A
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tranzorb diode
Abstract: G8P50G TRANZORB P channel IGBT HGTD8P50G1S HGTD8P50G1
Text: HGTD8P50G1, HGTD8P50G1S S E M I C O N D U C T O R 8A, 500V P-Channel IGBTs May 1996 Features Package JEDEC TO-251AA • 8A, 500V • 3.7V VCE SAT • Typical Fall Time - 1800ns EMITTER COLLECTOR GATE • High Input Impedance (FLANGE) COLLECTOR • TJ = +150oC
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Original
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PDF
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HGTD8P50G1,
HGTD8P50G1S
O-251AA
1800ns
150oC
O-252AA
HGTD8P50G1
HGTD8P50G1S
1-800-4-HARRIS
tranzorb diode
G8P50G
TRANZORB
P channel IGBT
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G8P50G
Abstract: TA49015 P channel IGBT
Text: HGTD8P50G1, HGTD8P50G1S HARRIS S E M I C O N D U C T O R 8A, 500V P-Channel IGBTs April 1995 Features Package JEDEC TO-251AA • 8A, 500V • 3.7V VCE SAT EMITTER COLLECTOR GATE • Typical Fall Time - 1800ns • High Input Im pedance (FLANG E) COLLECTOR
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OCR Scan
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PDF
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HGTD8P50G1,
HGTD8P50G1S
O-251AA
1800ns
HGTD8P50G1
HGTD8P50G1S
G8P50G
TA49015
P channel IGBT
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EM- 546 motor
Abstract: G8P50G 2S2A
Text: HGTD8P50G1, HGTD8P50G1S HARRIS S E M I C O N D U C T O R 8A, 5 0 0 V P - C h a n n e l I G B T s March 1997 Features Pa ckage JEDEC TO-251 AA • 8A, s o o v • 3.7V V CE SAT EMITTER COLLE CTO R GATE • T y p ic a l Fall T i m e - 1 8 0 0 n s • H ig h I n p u t I m p e d a n c e
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OCR Scan
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PDF
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HGTD8P50G1,
HGTD8P50G1S
O-251
HGTD8P50G1
TD8P50G
1-800-4-H
EM- 546 motor
G8P50G
2S2A
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Untitled
Abstract: No abstract text available
Text: HGTD8P50G1, HGTD8P50G1S H A R R IS S E M I C O N D U C T O R 8A, 500V P-Channel IGBTs March 1997 Features Package JEDEC TO-251AA • 8A, 500V • 3.7V V ce sat EMITTER COLLECTOR GATE • Typical Fall Time - 1800ns • High Input Impedance (FLANGE) COLLECTOR
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OCR Scan
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PDF
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HGTD8P50G1,
HGTD8P50G1S
O-251AA
1800ns
O-252AA
HGTD8P50G1
HGTD8P50G1S
T0-252AA
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