BC337A
Abstract: No abstract text available
Text: BC337A NPN Medium Power Transistor • This device is designed for general purpose amplifier application at collector currents to 800mA. • Sourced from process 38. TO-92 1 1. Collector 2. Base 3. Emitter Absolute Maximum Ratings TC=25°C unless otherwise noted
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BC337A
800mA.
BC337A
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Untitled
Abstract: No abstract text available
Text: BCW66G BCW66G NPN General Purpose Amplifier • This device is designed for general purpose amplifier applications at collector currents to 500mA. • Sourced from process 13. 3 2 1 SOT-23 Mark: EG 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings * TC=25°C unless otherwise noted
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BCW66G
500mA.
OT-23
150degrees
BCW66G
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pn4117a
Abstract: No abstract text available
Text: PN4117A PN4117A N-Channel Switch • This device is designed for low current DC and audio application. These devices provide excellent performance as input stages for subpicoamp instrumentation or any high impedance signal sources. • Sourced from process 53.
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PN4117A
150degrees
PN4117A
ND26Z
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Untitled
Abstract: No abstract text available
Text: MPS8598 PNP General Purpose Amplifier • • This device is designed for use as general purpose amplifiers and switches requiring collector currents to 300 mA. Sourced from Process 68. TO-92 1 1. Emitter 2. Base 3. Collector Absolute Maximum Ratings TC=25°C unless otherwise noted
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MPS8598
MPS8598
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Untitled
Abstract: No abstract text available
Text: KSA928A Audio Power Amplifier • • • Complement to KSC2328A Collector Power Dissipation : PC=1W 3 Watt Output Application TO-92L 1 1. Emitter 2. Collector 3. Base Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol Parameter Value Units VCBO
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KSA928A
KSC2328A
O-92L
KSA928A
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MPS8598
Abstract: No abstract text available
Text: MPS8598 PNP General Purpose Amplifier • This device is designed for use as general purpose amplifiers and switches requiring collector currents to 300 mA. • Sourced from Process 68. TO-92 1 1. Emitter 2. Base 3. Collector Absolute Maximum Ratings TC=25°C unless otherwise noted
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MPS8598
MPS8598
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BC184
Abstract: 150deg transistor BC184 BC184* transistor
Text: BC184 Silicon NPN Small Signal Transistor • BVCEO = 30V Min. • hFE = 130 (Min.) @VCE = 5.0V, IC = 100mA TO-92 1 1. Collector 2. Base 3. Emitter Absolute Maximum Ratings TC=25°C unless otherwise noted Value Units VCEO Symbol Collector-Emitter Voltage
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BC184
100mA
BC184
150deg
transistor BC184
BC184* transistor
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D44H11TU
Abstract: fairchild 748 QS 100 NPN Transistor 100MHZ KSE45H 748 transistor on 1244H
Text: D44H11TU NPN Epitaxial Silicon Transistor • Low Collector-Emitter Saturation Voltage : VCE sat = 1V (Max.) @ 8A • Fast Switching Speeds • Complement to KSE45H TO-220 1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25°C unless otherwise noted
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D44H11TU
KSE45H
O-220
D44H11TU
fairchild 748
QS 100 NPN Transistor
100MHZ
KSE45H
748 transistor on
1244H
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BCW66G
Abstract: No abstract text available
Text: BCW66G BCW66G NPN General Purpose Amplifier • This device is designed for general purpose amplifier applications at collector currents to 500mA. • Sourced from process 13. 3 2 1 SOT-23 Mark: EG 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings * TC=25°C unless otherwise noted
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BCW66G
500mA.
OT-23
BCW66G
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BC184LC
Abstract: No abstract text available
Text: BC184LC BC184LC Silicon NPN Small Signal Transistor Note 1 • BVCEO = 30V (Min.) • hFE = 250 (Min.) @VCE = 5.0V, IC = 2mA TO-92 1 1. Emitter 2. Collector 3. Base Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage
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BC184LC
BC184LC
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MPS6513
Abstract: No abstract text available
Text: MPS6513 NPN General Purpose Amplifier • This device is designed as a general purpose amplifier and switch. • The useful dynamic range extends to 100mA as a switch and to 100MHz as an amplifier. • Sourced from Proces 23. TO-92 1 1. Emitter 2. Base 3. Collector
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MPS6513
100mA
100MHz
MPS6513
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BC184C
Abstract: No abstract text available
Text: BC184C BC184C Silicon NPN Small Signal Transistor Note 1 • BVCEO = 30V (Min.) • hFE = 130 (Min.) @VCE = 5.0V, IC = 100mA TO-92 1 1. Collector 2. Base 3. Emitter Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage
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BC184C
100mA
BC184C
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BC184LC
Abstract: No abstract text available
Text: BC184LC BC184LC Silicon NPN Small Signal Transistor Note 1 • BVCEO = 30V (Min.) • hFE = 250 (Min.) @VCE = 5.0V, IC = 2mA TO-92 1 1. Emitter 2. Collector 3. Base Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage
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BC184LC
BC184LC
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FZT790A
Abstract: No abstract text available
Text: FZT790A FZT790A PNP Low Saturation Transistor 4 • These devices are designed with high current gain and low saturation voltage with collector currents up to 3A continuous. 3 2 1 SOT-223 1. Base 2.4. Collector 3. Emitter Absolute Maximum Ratings * TC=25°C unless otherwise noted
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FZT790A
OT-223
FZT790A
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FA7764P
Abstract: FA7764 fuji capacitor 220uF 10V FA7764n FA7764AN fa7738 3.1v ZENER DIODE SD833-06 PWM converter DC-DC 24v 5v DIP-8 FA7738N
Text: FA7764 FUJI Power Supply Control IC DC/DC Power Supply control IC FA7764 Application Note June-2010 Fuji Electric Systems Co.,Ltd Fuji Electric Systems Co., Ltd. AN-059E Rev.1.0 June.2010 1 http://www.fujielectric.co.jp/fdt/scd/ FA7764 WARNING 1. This Data Book contains the product specifications, characteristics, data, materials, and structures as
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FA7764
June-2010
AN-059E
voltage2030V,
FA7738N
SD833-06
CDRH104R-47uH
220pF
FA7764P
FA7764
fuji capacitor 220uF 10V
FA7764n
FA7764AN
fa7738
3.1v ZENER DIODE
SD833-06
PWM converter DC-DC 24v 5v DIP-8
FA7738N
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BCW66G
Abstract: No abstract text available
Text: BCW66G BCW66G NPN General Purpose Amplifier 3 • This device is designed for general purpose amplifier applications at collector currents to 500mA. • Sourced from process 19. 2 SOT-23 Mark: EG 1. Base 2. Emitter 3. Collector 1 Absolute Maximum Ratings * TC=25°C unless otherwise noted
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BCW66G
500mA.
OT-23
BCW66G
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transistor BC 458
Abstract: BC184l transistor code 458 055 transistor bc184l BC 458 transistor 184L bc184L npn transistor bc icbo nA npn 3184L BC184* transistor
Text: BC184L BC184L Silicon NPN Small Signal Transistor Note 1 • BVCEO = 30V (Min.) • hFE = 130 (Min.) @VCE = 5.0V, IC = 100mA TO-92 1 1. Emitter 2. Collector 3. Base Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage
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BC184L
100mA
BC184L
transistor BC 458
transistor code 458 055
transistor bc184l
BC 458 transistor
184L
bc184L npn
transistor bc icbo nA npn
3184L
BC184* transistor
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PN4117A
Abstract: No abstract text available
Text: PN4117A PN4117A N-Channel Switch • This device is designed for low current DC and audio application. These devices provide excellent performance as input stages for subpicoamp instrumentation or any high impedance signal sources. • Sourced from process 53.
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PN4117A
PN4117A
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Untitled
Abstract: No abstract text available
Text: FZT790A FZT790A PNP Low Saturation Transistor 4 • These devices are designed with high current gain and low saturation voltage with collector currents up to 3A continuous. 3 2 1 SOT-223 1. Base 2.4. Collector 3. Emitter Absolute Maximum Ratings * TC=25°C unless otherwise noted
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FZT790A
OT-223
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Untitled
Abstract: No abstract text available
Text: KSA928A Audio Power Amplifier • Complement to KSC2328A • Collector Power Dissipation : PC=1W • 3 Watt Output Application TO-92L 1 1. Emitter 2. Collector 3. Base Absolute Maximum Ratings TC=25°C unless otherwise noted Value Units VCBO Symbol Collector-Base Voltage
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KSA928A
KSC2328A
O-92L
KSA928A
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equivalent of transistor bc212
Abstract: BC212 bc212 datasheet DATASHEET Transistor BC212
Text: BC212 PNP General Purpose Amplifier • This device is designed for general purpose amplifier application at collector currents to 300mA. • Sourced from process 68. TO-92 1 1. Collector 2. Base 3. Emitter Absolute Maximum Ratings TC=25°C unless otherwise noted
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BC212
300mA.
BC212
equivalent of transistor bc212
bc212 datasheet
DATASHEET Transistor BC212
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Untitled
Abstract: No abstract text available
Text: SPDT Non-Reflective Switch ITTC02AB FEATURES • • • • • • • SOIC-8 package Non-Reflective Usable to 5 GHz High Isolation 42 dB @ 1GHz Positive Control when “floated” with capacitors Pin-for-pin compatible with standard “C02” matched switches
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ITTC02AB
ITTC02AB
150degrees
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PN4117A
Abstract: No abstract text available
Text: J*>z.ml- 2onctu.ctoi ^Products, One. TELEPHONE: (973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. PN4117A N-Channel Switch • This device is designed for low current DC and audio application. These devices provide excellent performance as input stages for subpicoamp instrumentation or any high impedance signal sources.
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PN4117A
PN4117A
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D45C8
Abstract: No abstract text available
Text: D45C8 D45C8 PNP Current Driver Transistor • This device is designed for power amplifier, regulator and switching circuits speed is important. • Sourced from process 5P. TO-220 1 1. Base 2. Collector 3. Emitter Absolute Maximum Ratings * TA=25°C unless otherwise noted
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D45C8
O-220
150degrees
D45C8
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