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    150DU12H Price and Stock

    Powerex Power Semiconductors CM150DU-12H

    IGBT MOD 600V 150A 600W
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    DigiKey CM150DU-12H Bulk 10
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    Mitsubishi Electric CM150DU-12H

    Igbt Module, 600V, 150A; Continuous Collector Current:150A; Collector Emitter Saturation Voltage:3V; Power Dissipation:600W; Operating Temperature Max:150°C; Igbt Termination:Tab; Collector Emitter Voltage Max:600V Rohs Compliant: No |Mitsubishi Electric CM150DU-12H
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    Newark CM150DU-12H Bulk 10
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    150DU12H Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    25TN2H

    Abstract: ME501210 800HB E501606 M6AB 1200HB-66H 57959L E50081 20CSJ060 30CSJ060
    Text: Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 n _ i j ] _ s i _ h A E Dim. Inches Millimeters Dim. Inches Millimeters Dim. Inches 0.79 20.0 A 1.54 Max. 39.0 Max. B 0.61 15.6 B 1,268±0.008


    OCR Scan     		PDF KS0312A0 KS8245A1 RM75TPM-H E600815, E601215, E601615 20TPM 25TN2H ME501210 800HB E501606 M6AB 1200HB-66H 57959L E50081 20CSJ060 30CSJ060

    600HU

    Abstract: GE 047 TRANSISTOR transistor nf 37 150DU12H 100DU-12H
    Text: m N EREX Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 HIGH PERFORMANCE U-SERIES IG BTM O D TRANSISTOR POWER MODULES Major R atings and Characteristics at Tc = 25 C (T¡ M axim um = 1 5 0 C ) MAXIMUM RATINGS ELECTRICAL CHARACTERISES


    OCR Scan     		PDF 400HU 600HU GE 047 TRANSISTOR transistor nf 37 150DU12H 100DU-12H

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI IGBT MODULES CM150DU-12H HIGH POWER SWITCHING USE INSULATED TYPE Tc Measured Description: Mitsubishi IGBT Modules are de­ signed for use in switching applica­ tions. Each module consists of two IGBTs in a half-bridge configuration with each transistor having a reverse-connected super-fast recov­


    OCR Scan     		PDF CM150DU-12H