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    150N1 Search Results

    150N1 Result Highlights (2)

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    ADUM150N1BRZ-RL7 Analog Devices IC Robust 5 ch digitalI SO 5/0 Visit Analog Devices Buy
    ADUM150N1BRZ Analog Devices IC Robust 5 ch digitalI SO 5/0 Visit Analog Devices Buy
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    150N1 Price and Stock

    Infineon Technologies AG IAUT150N10S5N035ATMA1

    MOSFET N-CH 100V 150A 8HSOF
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    DigiKey IAUT150N10S5N035ATMA1 Reel 6,000 2,000
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    IAUT150N10S5N035ATMA1 Cut Tape 508 1
    • 1 $4.15
    • 10 $2.739
    • 100 $1.9336
    • 1000 $1.49338
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    Mouser Electronics IAUT150N10S5N035ATMA1 9,689
    • 1 $3.19
    • 10 $2.68
    • 100 $1.96
    • 1000 $1.5
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    Rochester Electronics IAUT150N10S5N035ATMA1 4,590 1
    • 1 $1.74
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    • 100 $1.64
    • 1000 $1.48
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    Chip1Stop IAUT150N10S5N035ATMA1 Cut Tape 2,000
    • 1 $3.36
    • 10 $2.21
    • 100 $1.56
    • 1000 $1.53
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    EBV Elektronik IAUT150N10S5N035ATMA1 8,000 19 Weeks 2,000
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    New Advantage Corporation IAUT150N10S5N035ATMA1 6,000 1
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    Goford Semiconductor GT150N12T

    MOSFET N-CH 120V 55A TO-220
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    DigiKey GT150N12T Tube 4,000 1,000
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    GT150N12T Tube 74 1
    • 1 $1.23
    • 10 $1.009
    • 100 $0.7848
    • 1000 $0.54186
    • 10000 $0.46339
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    onsemi FDB150N10

    MOSFET N-CH 100V 57A D2PAK
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    DigiKey FDB150N10 Cut Tape 584 1
    • 1 $4.79
    • 10 $3.181
    • 100 $2.2635
    • 1000 $2.2635
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    Avnet Americas FDB150N10 Reel 4 Weeks 175
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    FDB150N10 Reel 22 Weeks 800
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    Mouser Electronics FDB150N10 666
    • 1 $3.33
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    • 100 $2.27
    • 1000 $1.78
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    Newark FDB150N10 Reel 800
    • 1 $2.25
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    Rochester Electronics FDB150N10 241 1
    • 1 $2.08
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    Richardson RFPD FDB150N10 800
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    Avnet Silica FDB150N10 23 Weeks 800
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    EBV Elektronik FDB150N10 24 Weeks 800
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    onsemi FDP150N10

    MOSFET N-CH 100V 57A TO220-3
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    DigiKey FDP150N10 Tube 576 1
    • 1 $3.33
    • 10 $2.172
    • 100 $1.5127
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    Avnet Americas FDP150N10 Tube 17 Weeks 800
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    Mouser Electronics FDP150N10 793
    • 1 $2.92
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    Richardson RFPD FDP150N10 800
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    Avnet Silica FDP150N10 18 Weeks 50
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    EBV Elektronik FDP150N10 19 Weeks 50
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    STMicroelectronics STP150N10F7

    MOSFET N-CH 100V 110A TO220
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    DigiKey STP150N10F7 Tube 459 1
    • 1 $3.6
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    Avnet Americas STP150N10F7 Tube 26 Weeks 1,000
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    Mouser Electronics STP150N10F7 2,867
    • 1 $2.63
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    • 100 $1.42
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    Newark STP150N10F7 Bulk 1 1
    • 1 $0.464
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    STMicroelectronics STP150N10F7 2,867 1
    • 1 $2.5
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    • 100 $1.39
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    TME STP150N10F7 2 1
    • 1 $3.24
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    Ameya Holding Limited STP150N10F7 3,000
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    Avnet Silica STP150N10F7 700 17 Weeks 50
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    Win Source Electronics STP150N10F7 65,000
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    • 1000 $0.754
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    Find more 150N1 price and stock on Findchips.com

    150N1 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    150N15

    Abstract: No abstract text available
    Text: Advanced Technical Information HiPerFETTM Power MOSFETs ISOPLUS247TM IXFR 150N15 VDSS = 150 V ID25 = 105 A RDS on = 12.5 mW (Electrically Isolated Backside) trr £ 250 ns Single MOSFET Die Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C


    Original     		PDF ISOPLUS247TM 150N15

    Tf 227

    Abstract: No abstract text available
    Text: IXFN 150N15 HiPerFETTM Power MOSFET VDSS ID25 RDS on Single MOSFET Die = 150 V = 150 A = 12.5 mW trr £ 250 ns Preliminary data sheet Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ 150 150 V V VGS VGSM


    Original     		PDF 150N15 OT-227 Tf 227

    Untitled

    Abstract: No abstract text available
    Text: Advanced Technical Information IXFR 150N15 VDSS = 150 HiPerFETTM Power MOSFETs ISOPLUS247TM V ID25 = 105 A RDS on = 12.5 mW (Electrically Isolated Backside) trr £ 250 ns Single MOSFET Die Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C


    Original     		PDF ISOPLUS247TM 150N15 247TM

    150N15

    Abstract: No abstract text available
    Text: HiPerFETTM Power MOSFETs IXFK 150N15 IXFX 150N15 VDSS ID25 RDS on Single MOSFET Die = 150 V = 150 A = 12.5 mW trr £ 250 ns Preliminary data sheet Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW 150 150


    Original     		PDF O-264 150N15 150N15

    Untitled

    Abstract: No abstract text available
    Text: Advance Technical Information PolarHTTM HiPerFET Power MOSFET IXFH 150N15P IXFK 150N15P VDSS = 150 V ID25 = 150 A Ω RDS on ≤ 13 mΩ N-Channel Enhancement Mode TO-247 (IXFH) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 175°C 150 V VDGR TJ = 25°C to 175°C; RGS = 1 MΩ


    Original     		PDF 150N15P O-247

    Untitled

    Abstract: No abstract text available
    Text: PolarHTTM HiPerFET IXFH 150N15P IXFK 150N15P Power MOSFET VDSS = 150 V ID25 = 150 A RDS on ≤ 13 m Ω N-Channel Enhancement Mode Fast Intrinsic Diode Avalanche Rated Symbol Test Conditions VDSS TJ = 25° C to 175° C 150 V VDGR TJ = 25° C to 175° C; RGS = 1 MΩ


    Original     		PDF 150N15P O-247

    150N15P

    Abstract: 150n15 IXTQ150N15P 2709V
    Text: PolarHTTM Power MOSFET IXTK 150N15P IXTQ 150N15P VDSS = 150 V ID25 = 150 A RDS on ≤ 13 m Ω N-Channel Enhancement Mode Avalanche Rated TO-264 (IXTK) Symbol Test Conditions Maximum Ratings VDSS TJ = 25° C to 175° C 150 V VDGR TJ = 25° C to 175° C; RGS = 1 MΩ


    Original     		PDF 150N15P O-264 150N15P 150n15 IXTQ150N15P 2709V

    150N15

    Abstract: No abstract text available
    Text: IXFK 150N15 IXFX 150N15 HiPerFETTM Power MOSFETs VDSS ID25 RDS on Single MOSFET Die = 150 V = 150 A = 12.5 mW trr £ 250 ns Preliminary data sheet Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 150


    Original     		PDF O-264 150N15 150N15

    150N15

    Abstract: fast IXFX
    Text: HiPerFETTM Power MOSFETs IXFK 150N15 IXFX 150N15 VDSS ID25 RDS on Single MOSFET Die = 150 V = 150 A = 12.5 mW trr £ 250 ns Preliminary data sheet Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW 150 150


    Original     		PDF 150N15 150N15 fast IXFX

    Untitled

    Abstract: No abstract text available
    Text: Advanced Technical Information HiPerFETTM Power MOSFETs ISOPLUS247TM IXFR 150N15 VDSS = 150 V ID25 = 105 A RDS on = 12.5 mW (Electrically Isolated Backside) trr £ 250 ns Single MOSFET Die Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C


    Original     		PDF ISOPLUS247TM 150N15 247TM E153432

    Untitled

    Abstract: No abstract text available
    Text: PolarHTTM Power MOSFET IXTK 150N15P IXTQ 150N15P VDSS = 150 V ID25 = 150 A RDS on ≤ 13 m Ω N-Channel Enhancement Mode Avalanche Rated TO-264 (IXTK) Symbol Test Conditions Maximum Ratings VDSS TJ = 25° C to 175° C 150 V VDGR TJ = 25° C to 175° C; RGS = 1 MΩ


    Original     		PDF 150N15P O-264

    Untitled

    Abstract: No abstract text available
    Text: HiPerFETTM Power MOSFET IXFN 150N15 VDSS ID25 RDS on Single MOSFET Die = 150 V = 150 A = 12.5 mW trr £ 250 ns Preliminary data sheet Symbol Test Conditions VDSS VDGR Maximum Ratings TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MW 150 150 V V ±20 ±30


    Original     		PDF 150N15 OT-227

    150N15

    Abstract: E 150N10 150N10 9100pF
    Text: HiPerFETTM Power MOSFET IXFN 150N15 VDSS ID25 RDS on Single MOSFET Die = 150 V = 150 A = 12.5 mW trr £ 250 ns Preliminary data sheet Symbol Test Conditions VDSS VDGR Maximum Ratings T J = 25°C to 150°C T J = 25°C to 150°C, RGS = 1MW 150 150 V V ±20


    Original     		PDF 150N15 OT-227 E153432 150N15 E 150N10 150N10 9100pF

    IXTQ150N15P

    Abstract: No abstract text available
    Text: Advanced Technical Information PolarHTTM Power MOSFET IXTQ 150N15P IXTK 150N15P VDSS = 150 V ID25 = 150 A Ω RDS on ≤ 13 mΩ N-Channel Enhancement Mode TO-3P (IXTQ) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 175°C 150 V VDGR TJ = 25°C to 175°C; RGS = 1 MΩ


    Original     		PDF 150N15P IXTQ150N15P

    Untitled

    Abstract: No abstract text available
    Text: HiPerFETTM Power MOSFET IXFN 150N15 VDSS ID25 RDS on Single MOSFET Die = 150 V = 150 A = 12.5 mW trr £ 250 ns Preliminary data sheet Symbol Test Conditions VDSS VDGR Maximum Ratings T J = 25°C to 150°C T J = 25°C to 150°C, RGS = 1MW 150 150 V V VGS VGSM


    Original     		PDF 150N15 OT-227 E153432

    100N120

    Abstract: 25N120 100N-120 150N120 75N120 15N120 IC IGBT 25N120 100N170 IC IGBT 15N120 mj 1352
    Text: Chip-Shortform2004.pmd IC TVJM 1200 IXED 15N120 IXED 25N120 IXED 50N120 IXED 75N120 IXED 100N120 IXED 150N120 1700 IXED 75N170 IXED 100N170 °C 150 Eoff Eon inductive load TVJ = 125°C Qg on Internal Gate Sithickn. A A mm • • • • • • 20 25 50


    Original     		PDF 15N120 25N120 50N120 75N120 100N120 150N120 75N170 100N170 100N-120 IC IGBT 25N120 100N170 IC IGBT 15N120 mj 1352

    E 150N10

    Abstract: 150N10 100N10 IXFK100N10 IXFN150N10
    Text: HiPerFETTM Power MOSFETs VDSS IXFK100N10 150N10 ID25 RDS on 100 V 100 A 100 V 150 A trr £ 200 ns N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr 12 mW 12 mW TO-264 AA (IXFK) Symbol Test Conditions Maximum Ratings IXFK IXFN VDSS TJ = 25°C to 150°C


    Original     		PDF IXFK100N10 IXFN150N10 O-264 ID120 E 150N10 150N10 100N10 IXFK100N10 IXFN150N10

    Untitled

    Abstract: No abstract text available
    Text: 150N10F7, 150N10F7 N-channel 100 V, 0.0036 Ω typ., 110 A, STripFET VII DeepGATE™ Power MOSFETs in I2PAK and TO-220 packages Datasheet − production data Features Order codes VDS RDS on max 100 V 0.0042 Ω 150N10F7 ID PTOT 110 A 250 W 150N10F7


    Original     		PDF STI150N10F7, STP150N10F7 O-220 STI150N10F7 O-220 DocID024552

    SKIIP 33 nec 125 t2

    Abstract: skiip 613 gb 123 ct RBS 6302 ericsson SKIIP 513 gb 173 ct THERMISTOR ml TDK 150M pioneer PAL 010a Project Report of smoke alarm using IC 555 doc SKiip 83 EC 125 T1 ericsson RBS 6000 series INSTALLATION MANUAL Ericsson Installation guide for RBS 6302
    Text: Discontinued and Superseded Stock Number History. This document contains Discontinued and Superseded Stock Number History. The information is listed in the following format: Stock Number: The original RS Stock Number of the item. Brief Description: The Invoice Description of the item.


    Original     		PDF 734TL UWEB-MODEM-34 HCS412/WM TLV320AIC10IPFB 100MB NEON250 GA-60XM7E BLK32X40 BLK32X42 SKIIP 33 nec 125 t2 skiip 613 gb 123 ct RBS 6302 ericsson SKIIP 513 gb 173 ct THERMISTOR ml TDK 150M pioneer PAL 010a Project Report of smoke alarm using IC 555 doc SKiip 83 EC 125 T1 ericsson RBS 6000 series INSTALLATION MANUAL Ericsson Installation guide for RBS 6302

    IXTD08N100P-1A

    Abstract: IXTQ22N60P IXFH20N80P DWS20-200A IXFH24N80P IXFK180N15P IXTQ22N50P DWHP16-12 IXGH64N60A3 IXFB50N80Q2
    Text: www.ixys.com Contents Page Symbols and Definitions Nomenclature General Informations for Chips Assembly Instructions FRED, Rectifier Diode and Thyristor Chips in Planar Design 2 2 3 4 5 IGBT Chips VCES G-Series, Low VCE sat B2 Types G-Series, Fast C2 Types


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: IXYS VDSS HiPerFET Power MOSFETs IXFK100N10 IXFN 150N10 N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr D ^025 DS on 100 V 100 A 12 mQ 100 V 150 A 12 mQ trr <200 ns TO-264 AA (IXFK) Symbol Test Conditions Maximum Ratings IXFK IXFN vDSS


    OCR Scan     		PDF IXFK00N10 IXFN150N10 O-264 to150 OT-227 E153432

    0405B

    Abstract: 0581B NE5539D NE5539F NE5539N SE5539F
    Text: Philips Semiconductors RF Communications Products Product specification High frequency operational amplifier DESCRIPTION NE/SE5539 PIN CONFIGURATION The NE/SE5539 is a very wide bandwidth, high slew rate, monolithic operational amplifier for use in video amplifiers, RF amplifiers, and


    OCR Scan     		PDF NE/SE5539 350MHz 48MHz 7110fl2b NE/SE5539 500nH-VW 2-20pF 711002b 0405B 0581B NE5539D NE5539F NE5539N SE5539F

    150N10

    Abstract: No abstract text available
    Text: HiPerFET Power MOSFETs IXFK 100 N10 IXFN 150 N10 V DSS ^025 100 V 100 V 100 A 150 A D DS on 12 mQ 12 mQ N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr TO-264 AA (IXFK) Symbol Test Conditions Voss T, = 25 °C tO l50°C 100 100 V Voen T, = 25°C to 150°C; RGS = 1 M£2


    OCR Scan     		PDF IXFK100N10 IXFN150N10 O-264 OT-227 E153432 IXFK10QN40 150N10

    Diode D25 N10 R

    Abstract: Diode D25 N10 P
    Text: XYS HiPerFET Power MOSFETs IXFK100N10 IXFN150 N10 v ¥ DSS ^D25 P DS on = = = 100 V 100/150 A 12 mQ 200 ns N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr K P relim inary data TO-264 AA (IXFK) Symbol Test Conditions Maximum Ratings IXFK


    OCR Scan     		PDF IXFK100N10 IXFN150 O-264 OT-227 E153432 Diode D25 N10 R Diode D25 N10 P