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Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR SMALL-SIGNAL TRANSISTOR 2SC5213 FOR PRE-DRIVE APPLICATION SILICON NPN EPITAXIAL TYPE DESCRIPTION OUTLINE DRAWING Mitsubishi 2SC5213 is a resin sealed silicon NPN epitaxial type transistor. It designed with high voltage, high hFE an d high tr.
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2SC5213
2SC5213
2SA1948.
200MHz
150to800
500mW
SC-62
270Hz
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2SC3242
Abstract: LC10T 2SC3242A 4VXZ
Text: MITSUBISHI SEMICONDUCTOR <SMALL-SIGNAL TRANSISTOR 2SC3242,2SC3242A FOR LOW FREQUENCY POWER AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE DESCRIPTION OUTLINE DRAWING Mitsubishi 2SC3242.2SC3242A is a silicon NPN epitaxial type transistor <¡>5.1 M A X designed for small type motor drive, solenoid drive and power supply
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2SC3242
2SC3242A
2SC3242A
2SA1282
2SA1282A.
150to800
900mW
LC10T
4VXZ
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2SC3245
Abstract: 2SA1285 2SC3245A
Text: MITSUBISHI SEMICONDUCTOR SMALL-SIGNAL TRANSISTOR 2SC3245,2SC3245A FOR PRE-DRIVE APPLICATION SILICON NPN EPITAXIAL TYPE DESCRIPTION OUTLINE DRAWING Mitsubishi 2SC3245.2SC3245A is a silicon NPN epitaxial type transistor. «&5.1MAX Designed with high voltage, high hFE, high fr, low Cob and excellent hFE
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2SC3245
2SC3245A
2SC3245A
2SA1285
2SA1285A.
200MHz,
150to800
900mW
270Hz
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diode marking YG
Abstract: 2SC3728 MITSUBISHI LOT NO transistor cr marking
Text: MITSUBISHI SEMICONDUCTOR {SMALL-SIGNAL TRANSISTOR 2SC3728 FOR HIGH CURRENT DRIVE APPLICATION SILICON NPN EPITAXIAL TYPE DESCRIPTION Mitsubishi 2SC3728 Is a silicon N PN epitaxial type transistor.There is a built-in zener diode between collector to emitter.
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2SC3728
2SC3728
150to800
500mW
100mA
-10mA
diode marking YG
MITSUBISHI LOT NO
transistor cr marking
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