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    270HZ Price and Stock

    Richtek Technology Corp RT7270HZSP

    IC REG BUCK ADJ 3A 8SOP
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    DigiKey RT7270HZSP Reel 2,500
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    Mouser Electronics RT7270HZSP 2,490
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    Bristol Electronics RT7270HZSP 37,043
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    SMC Corporation of America MY1B32-270HZ

    CYLINDER, RODLESS, MECH JOINT, SLIDE TABLE, MY1 SERIES | SMC Corporation MY1B32-270HZ
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    RS MY1B32-270HZ Bulk 5 Weeks 1
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    SMC Corporation of America MY1H32-270HZ

    CYLINDER, RODLESS, SLIDE TABLE, MY1 SERIES | SMC Corporation MY1H32-270HZ
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    RS MY1H32-270HZ Bulk 5 Weeks 1
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    SMC Corporation of America MY1B40-1270HZ

    CYLINDER, RODLESS, MECH JOINT, SLIDE TABLE, MY1 SERIES | SMC Corporation MY1B40-1270HZ
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    RS MY1B40-1270HZ Bulk 5 Weeks 1
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    SMC Corporation of America MY1B32G-270HZ

    CYLINDER, RODLESS, MECH JOINT, SLIDE TABLE, MY1 SERIES | SMC Corporation MY1B32G-270HZ
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    RS MY1B32G-270HZ Bulk 5 Weeks 1
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    270HZ Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2sc2712

    Abstract: C 029 Transistor
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SC2712 NPN SILICON TRANSISTOR AUDIO FREQUENCY AMPLIFIER NPN TRANSISTOR „ 3 FEATURES 1 2 * High Voltage and High Current : VCEO=50V, IC=150mA Max. * Excellent hFE Linearity : hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(Typ.) * High hFE


    Original     		PDF 2SC2712 150mA OT-23 OT-323 2SC2712L 2SC2712G 2SC2712L-x-AE3-R 2SC2712G-x-AE3-R 2SC2712L-x-AL3-R 2SC2712G-x-AL3-R 2sc2712 C 029 Transistor

    Honda Connectors

    Abstract: BHR-03VS-1 LMX1622-05-01 LMX1622-05-02 LMX1622-05-03 LXM1622-05-XX QZ-19-3F01 SM02
    Text: A  M I C R O S E M I RangeMAX LXM1622-05-xx DUAL 5W, DIGITAL DIMMING CCFL INVERTER MODULE C O M P A N Y P RELIMINARY D ATA S HEET The resultant “burst drive” that energizes the lamp was designed specifically to ensure that no premature lamp degradation occurs See the “How


    Original     		PDF LXM1622-05-xx LXM1612-12 Honda Connectors BHR-03VS-1 LMX1622-05-01 LMX1622-05-02 LMX1622-05-03 LXM1622-05-XX QZ-19-3F01 SM02

    Untitled

    Abstract: No abstract text available
    Text: Transistor 2SD0637 2SD637 Silicon NPN epitaxial planer type For low-power general amplification Unit: mm 2.5±0.1 • Absolute Maximum Ratings Ratings Unit VCBO 60 V Collector to emitter voltage VCEO 50 V Emitter to base voltage VEBO 7 V Peak collector current


    Original     		PDF 2SD0637 2SD637)

    KTC3198A

    Abstract: 41BL
    Text: SEMICONDUCTOR KTC3198A TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B FEATURES C A ・Excellent hFE Linearity : hFE 2 =100(Typ.) at VCE=6V, IC=150mA : hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(Typ.). N ・Low Noise : NF=1dB(Typ.). at f=1kHz.


    Original     		PDF KTC3198A 150mA KTA1266A. 270Hz KTC3198A 41BL

    Transistor hFE CLASSIFICATION Marking CE

    Abstract: KTA2017 KTC4077 hFE CLASSIFICATION Marking CE hfe 300
    Text: SEMICONDUCTOR KTC4077 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR LOW NOISE AMPLIFIER APPLICATION. FEATURES E ・High Voltage : VCEO=120V. B M M ・Excellent hFE Linearity DIM A B C MILLIMETERS _ 0.20 2.00 + _ 0.15 1.25 + _ 0.10 0.90 + ・Low Noise : NF=1dB Typ. , 10dB(Max.).


    Original     		PDF KTC4077 KTA2017. Transistor hFE CLASSIFICATION Marking CE KTA2017 KTC4077 hFE CLASSIFICATION Marking CE hfe 300

    2SB0709A

    Abstract: 2SB709A 2SD0601A 2SD601A
    Text: Transistor 2SB0709A 2SB709A Silicon PNP epitaxial planer type For general amplification Complementary to 2SD0601A (2SD601A) Unit: mm 0.40+0.10 ñ0.05 0.4±0.2 5° 1.50+0.25 -0.05 High foward current transfer ratio hFE. Mini type package, allowing downsizing of the equipment and


    Original     		PDF 2SB0709A 2SB709A) 2SD0601A 2SD601A) 2SB0709A 2SB709A 2SD0601A 2SD601A

    Untitled

    Abstract: No abstract text available
    Text: UTC 79LXX LINEAR INTEGRATED CIRCUIT 3-TERMINAL 0.1A NEGATIVE VOLTAGE REGULATOR SOP-8 DESCRIPTION The UTC 79LXX family is monolithic fixed voltage regulator integrated circuit. They are suitable for applications that required supply current up to 100mA. 1 TO-92


    Original     		PDF 79LXX 79LXX 100mA. 100mA OT-89 OT-89: QW-R101-003

    UMT222A

    Abstract: TRANSISTOR 1P transistors marking 1p BC847B BC857B MMST2222A PN2222A T116 B128D MARKING 5D NPN
    Text: BC847B Transistors NPN General Purpose Transistor BC847B zExternal dimensions Unit : mm zFeatures 1) BVCEO < 45V (IC=1mA) 2) Complements the BC857B. 2.9±0.2 0.95 +0.2 −0.1 1.9±0.2 zPackage, marking, and Packaging specifications Packaging type SST3 Marking


    Original     		PDF BC847B BC857B. UMT222A TRANSISTOR 1P transistors marking 1p BC847B BC857B MMST2222A PN2222A T116 B128D MARKING 5D NPN

    U232p9

    Abstract: UPS APC CIRCUIT future scope of wireless charger mba mini projects APC UPS repair 220V ac to 9V dc converter circuit APC smart 1000 ups low cost mini project simple make protect apc smart ups 1000 9053-0000
    Text: FIS HAND HELD MINI-OTDR FIS MINI-OTDR FEATURES NEW LOWER PRICE! TEST EQUIPMENT stry • Lowest Cost Multi-Wavelength OTDR in the Indus Industry • Small and Lightweight Hand Held Case • One Button Scan • Data Storage and Data Download up to 255 Traces


    Original     		PDF FSM-50S FTB-150 CMA4500 U232p9 UPS APC CIRCUIT future scope of wireless charger mba mini projects APC UPS repair 220V ac to 9V dc converter circuit APC smart 1000 ups low cost mini project simple make protect apc smart ups 1000 9053-0000

    KTA1504S

    Abstract: KTC3875S
    Text: SEMICONDUCTOR KTC3875S TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES E B L L Excellent hFE Linearity 2 A 700. 3 G High hFE : hFE=70 D : hFE 0.1mA /hFE(2mA)=0.95(Typ.). H Low Noise : NF=1dB(Typ.), 10dB(Max.).


    Original     		PDF KTC3875S KTA1504S. 270Hz KTA1504S KTC3875S

    lxm1612xxxx

    Abstract: Honda Connectors BHR-03VS-1 LMX1622-05-01 LMX1622-05-02 LMX1622-05-03 LXM1622-05-XX QZ-19-3F01 SM02 5422K
    Text: A  M I C R O S E M I RangeMAX LXM1622-05-xx DUAL 5W, DIGITAL DIMMING CCFL INVERTER MODULE C O M P A N Y P RELIMINARY D ATA S HEET The resultant “burst drive” that energizes the lamp was designed specifically to ensure that no premature lamp degradation occurs See the “How


    Original     		PDF LXM1622-05-xx LXM1612-12 lxm1612xxxx Honda Connectors BHR-03VS-1 LMX1622-05-01 LMX1622-05-02 LMX1622-05-03 LXM1622-05-XX QZ-19-3F01 SM02 5422K

    2SB642

    Abstract: No abstract text available
    Text: Transistors 2SB0642 2SB642 Silicon PNP epitaxial planar type For low-power general amplification Unit: mm 2.5±0.1 • Absolute Maximum Ratings (Ta=25˚C) (1.0) (0.85) 0.45±0.05 Parameter Symbol Ratings Unit Collector to base voltage VCBO –60 V Collector to emitter voltage


    Original     		PDF 2SB0642 2SB642) 2SB642

    Untitled

    Abstract: No abstract text available
    Text: Composite Transistors XN0C301 XN1C301 Silicon PNP epitaxial planer transistor (Tr1) Silicon NPN epitaxial planer transistor (Tr2) Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) ● 2 2.8+0.2 –0.3 5 5˚ Two elements incorporated into one package. (Tr1 base is connected to Tr2 emitter.)


    Original     		PDF XN0C301 XN1C301)

    HHM290

    Abstract: No abstract text available
    Text: omega.com OMEGAnet OnLine Service www.omega.com Benelux: Internet e-mail info@omega.com One Omega Drive, Box 4047 Stamford, CT 06907-0047 Tel: 203 359-1660 e-mail: info@omega.com Canada: 976 Bergar Laval (Quebec) H7L5A1 Tel: (514) 856-6928 e-mail: info@omega.ca


    Original     		PDF 631111ed EN61010-1 30minutes 12Vmax. 202mm 100mm HHM290

    MMBTSC3875

    Abstract: No abstract text available
    Text: MMBTSC3875LT1 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into four groups O, Y, G and L, according to its DC current gain. SOT-23 Plastic Package Absolute Maximum Ratings Ta = 25oC Symbol


    Original     		PDF MMBTSC3875LT1 OT-23 270Hz MMBTSC3875

    KTA2014F

    Abstract: No abstract text available
    Text: SEMICONDUCTOR KTC4075F TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES E ・Excellent hFE Linearity B : hFE 0.1mA /hFE(2mA)=0.95(Typ.). ・High hFE : hFE=70~700. D 3 K ・Complementary to KTA2014F.


    Original     		PDF KTC4075F KTA2014F. 270Hz KTA2014F

    2SB0709A

    Abstract: 2SB709A 2SD0601A 2SD601A XP04601 XP4601
    Text: Composite Transistors XP04601 XP4601 Silicon NPN epitaxial planer transistor (Tr1) Silicon PNP epitaxial planer transistor (Tr2) Unit: mm For general amplification 0.65 1 6 2 5 3 4 +0.05 0 to 0.1 2SD0601A(2SD601A) + 2SB0709A(2SB709A) 0.12 –0.02 0.9±0.1


    Original     		PDF XP04601 XP4601) 2SD0601A 2SD601A) 2SB0709A 2SB709A) 2SB709A 2SD601A XP04601 XP4601

    transistor 131 8D

    Abstract: TRANSISTOR 8d
    Text: BC858BW / BC858B Transistors PNP General Purpose Transistor BC858BW / BC858B !External dimensions Units : mm !Features 1) BVCEO < -30V (IC=-1mA) 2) Complements the BC848B / BC848BW. BC858BW 2.0±0.2 0.9±0.1 1.3±0.1 0.65 0.65 BC858B Pakaging type UMT3 G3K


    Original     		PDF BC858BW BC858B BC848B BC848BW. BC858BW BC858B transistor 131 8D TRANSISTOR 8d

    AN7086S

    Abstract: No abstract text available
    Text: ICs for Cassette, Cassette Deck AN7086S Recording/Playback Pre-/Power Amplifier IC for 3V Microcassette • Overview Unit : mm 1 2 3 4 5 6 7 8 9 10 11 12 24 23 22 21 20 19 18 17 16 15 14 13 0.3 7.2±0.3 9.4±0.3 2.0±0.2 0.15 0.925 1.27 0.1±0.1 circuit 15.3±0.3


    Original     		PDF AN7086S AN7086S

    2SC400

    Abstract: 8S040 Produced by Perfect Crystal Device Technology 2SC400 M
    Text: 400 2SC 5 / U D > N P N X t :^ 2 / ^ W B h 5 > y ^ P C T Ä Ä SILICON NPN EPITAXIAL TRANSISTOR (PCT PROCESS) mmmcmuRj o o ' f * i-'srm o H ig h F re q u e n c y ° H ig h Sp eed • h •? -y ^ . m A m p lifie r S w itc h in g y • v 1- y • * 4 •


    OCR Scan     		PDF 300ns 8SA300 28A500 50MHz 2SC400 5011Hz 2SC400 8S040 Produced by Perfect Crystal Device Technology 2SC400 M

    2SC1815

    Abstract: 2SC1815GR 2SC1815-GR 2SC1815Y 2sc1815 transistor 2SC1815-Y asC1815 2SC18150 lbfb 2SC1815Y GR
    Text: 2s c 1815 ' 'n y N P N x ^ s > ^ m B h ^ y V Ä 5> P C T m ILICON NPN EPITAXIAL TRANSISTOR (PCT PROCESS Unit in mm o o General Purpose Transistor and Versatile Utility in both RF, AP Applications. MAXIMUM EATINGS CHARACTERISTIC (Ta = 2 5 BC) RATING SYMBOL


    OCR Scan     		PDF 2sc1815 2SC1815 2SC1815GR 2SC1815-GR 2SC1815Y 2sc1815 transistor 2SC1815-Y asC1815 2SC18150 lbfb 2SC1815Y GR

    20 pin TFT fujitsu

    Abstract: NL10276AC30 nec tft display module NL10276AC30-04E DOD-H-7242
    Text: NEC TFT COLOR LCD MODULE Type: NL10276AC30-04E 38cm 15 Type , XGA SPECIFICATIONS (First Edition) Preliminary All information in this document is subject to change without prior notice. NEC Corporation Display Device Operations Unit Color LCD Division Application Engineering Department


    OCR Scan     		PDF NL10276AC30-04E DOD-H-7242 20 pin TFT fujitsu NL10276AC30 nec tft display module DOD-H-7242

    Untitled

    Abstract: No abstract text available
    Text: SEMICONDUCTOR TECHNICAL DATA KTC4077 EPITAXIAL PLANAR NPN TRANSISTO R LOW NOISE AMPLIFIER APPLICATION. FEATURES • High Voltage : VCeo=120V. • Excellent hFF Linearity : hFE 0.1mA /hFE(2mA)=0.95(Typ.). • High hFE : hFE=200~700. • Low Noise : NF=ldB(Typ.), 10dB(Max.).


    OCR Scan     		PDF KTC4077 KTA2017. 270Hz

    KTA1504

    Abstract: KTC3875
    Text: KOREA ELECTRONICS CO.,LTD. SEMICONDUCTOR TECHNICAL DATA KTC3875 EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEAUTRES DIM A B C D E G H J K L M N P • Excellent hFE Linearity : hFE 0.1mA /hFE(2mA)=0.95(Typ.). • High Iife : h FE = 70 ~ 7 0 0.


    OCR Scan     		PDF KTC3875 KTA1504. 270Hz KTA1504 KTC3875