2SC2510
Abstract: No abstract text available
Text: 2SC2510 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2510 2~30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS 28V SUPPLY VOLTAGE USE Unit in mm l Specified 28V, 28MHz Characteristics l Output Power : Po = 150WPEP (Min.) l Power Gain : Gp = 12.2dB (Min.)
|
Original
|
2SC2510
30MHz
28MHz
150WPEP
-30dB
001MHz,
000MHz,
001MHz
2SC2510
|
PDF
|
2SC2510
Abstract: 2SC2510A
Text: 2SC2510A TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2510A 2~30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS 28V SUPPLY VOLTAGE USE Unit in mm z Specified 28V, 28MHz Characteristics z Output Power : Po = 150WPEP (Min.) z Power Gain : Gp = 12.2dB (Min.)
|
Original
|
2SC2510A
30MHz
28MHz
150WPEP
-30dB
2SC2510
2SC2510A
|
PDF
|
2SC2510
Abstract: 2sc2510 transistor application
Text: 2SC2510 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2510 2~30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS 28V SUPPLY VOLTAGE USE Unit in mm Specified 28V, 28MHz Characteristics Output Power : Po = 150WPEP (Min.) Power Gain : Gp = 12.2dB (Min.)
|
Original
|
2SC2510
30MHz
28MHz
150WPEP
-30dB
001MHz,
000MHz,
001MHz
2SC2510
2sc2510 transistor application
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 2SC2510A TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2510A 2~30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS 28V SUPPLY VOLTAGE USE Unit in mm Specified 28V, 28MHz Characteristics Output Power : Po = 150WPEP (Min.) Power Gain : Gp = 12.2dB (Min.)
|
Original
|
2SC2510A
30MHz
28MHz
150WPEP
-30dB
2-13B1A
|
PDF
|
2SC2510A
Abstract: 2sc2510 transistor application 2SC2510
Text: 2SC2510A TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2510A 2~30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS 28V SUPPLY VOLTAGE USE Unit in mm z Specified 28V, 28MHz Characteristics z Output Power : Po = 150WPEP (Min.) z Power Gain : Gp = 12.2dB (Min.)
|
Original
|
2SC2510A
30MHz
28MHz
150WPEP
-30dB
2SC2510A
2sc2510 transistor application
2SC2510
|
PDF
|
transformer 0-12v
Abstract: J101 0-12V 2204B MRF151 VRF151 Transistor C2 Unelco J101
Text: VRF151 50V, 150W, 175MHz RF POWER VERTICAL MOSFET The VRF151 is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or inter-modulation
|
Original
|
VRF151
175MHz
VRF151
30MHz,
175MHz,
MRF151
transformer 0-12v
J101
0-12V
2204B
MRF151
Transistor C2
Unelco J101
|
PDF
|
VRF141
Abstract: 28v 30MHZ MRF141 2204B
Text: VRF141 28V, 150W, 175MHz RF POWER VERTICAL MOSFET The VRF141 is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or inter-modulation
|
Original
|
VRF141
175MHz
VRF141
30MHz,
175MHz,
MRF141
28v 30MHZ
MRF141
2204B
|
PDF
|
blf177
Abstract: 2204B MRF151 VRF152
Text: VRF152 50V, 150W, 175MHz RF POWER VERTICAL MOSFET The VRF152 is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or inter-modulation
|
Original
|
VRF152
175MHz
VRF152
30MHz,
175MHz,
MRF151/
BLF177/
SD2941
blf177
2204B
MRF151
|
PDF
|
MS1007
Abstract: MONTGOMERYVILLE
Text: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 MS1007 RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS Features • • • • • 30 MHz 50 VOLTS POUT = 150 WATTS GP = 14 dB MINIMUM COMMON EMITTER CONFIGURATION
|
Original
|
MS1007
MS1007
100mA
150WPEP
000MHz
MONTGOMERYVILLE
|
PDF
|
Untitled
Abstract: No abstract text available
Text: MS1007 RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS Features 30 MHz 50 VOLTS POUT = 150 WATTS GP = 14 dB MINIMUM COMMON EMITTER CONFIGURATION DESCRIPTION: The MS1007 is a 50V epitaxial silicon NPN planar transistor designed primarily for SSB communications. This device
|
Original
|
MS1007
MS1007
150WPEP
000MHz
001MHz
100mA
|
PDF
|
Untitled
Abstract: No abstract text available
Text: MS1008 RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS Features • • • • • • 30 MHz 50 VOLTS IMD = –30 dB POUT = 150 WATTS GP = 14 dB MINIMUM COMMON EMITTER CONFIGURATION DESCRIPTION: The MS1007 is a 50V epitaxial silicon NPN planar transistor
|
Original
|
MS1008
MS1007
150WPEP
000MHz
001MHz
100mA
|
PDF
|
M208
Abstract: SD4590
Text: SD4590 RF & MICROWAVE TRANSISTORS 800-960 MHz CELLULAR BASE STATION . . . . . GOLD METALLIZATION DIFFUSED EMITTER BALLASTING INTERNAL INPUT/OUTPUT MATCHING COMMON EMITTER CONFIGURATION DESIGNED FOR LINEAR OPERATION HIGH SATURATED POWER CAPABILITY 26 VOLT, 900 MHz PERFORMANCE
|
Original
|
SD4590
-28dB
SD4590
M208
|
PDF
|
VK200-4B
Abstract: diode 4937 J101 VRF151 0-12V 2204B MRF151
Text: VRF151 PRELIMINARY 50V, 150W, 175MHz RF POWER VERTICAL MOSFET The VRF151 is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or inter-modulation
|
Original
|
VRF151
175MHz
VRF151
30MHz,
175MHz,
MRF151
VK200-4B
diode 4937
J101
0-12V
2204B
MRF151
|
PDF
|
VRF2933
Abstract: 300WPEP 2204b ATC100B LM3905 SD2933 M177
Text: VRF2933 PRELIMINARY 50V, 300W, 150MHz RF POWER VERTICAL MOSFET The VRF2933 is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or inter-modulation
|
Original
|
VRF2933
150MHz
VRF2933
30MHz,
SD2933
300WPEP
2204b
ATC100B
LM3905
SD2933
M177
|
PDF
|
|
|
Untitled
Abstract: No abstract text available
Text: VRF152E VRF152EMP 50V, 150W, 175MHz RF POWER VERTICAL MOSFET The VRF152E is a thermally-enhanced version of the VRF152. It is a goldmetallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without
|
Original
|
VRF152E
VRF152EMP
175MHz
VRF152E
VRF152.
M174A
30MHz,
175MHz,
SD2941-10
|
PDF
|
Untitled
Abstract: No abstract text available
Text: VRF141 VRF141MP 28V, 150W, 175MHz RF POWER VERTICAL MOSFET The VRF141 is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or inter-modulation
|
Original
|
VRF141
VRF141MP
175MHz
VRF141
30MHz,
175MHz,
MRF141
|
PDF
|
SD2941-10
Abstract: 2204B VRF152 VRF152E BR 3050 VRF152EMP
Text: VRF152E VRF152EMP 50V, 150W, 175MHz RF POWER VERTICAL MOSFET The VRF152E is a thermally-enhanced version of the VRF152. It is a goldmetallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without
|
Original
|
VRF152E
VRF152EMP
175MHz
VRF152E
VRF152.
M174A
30MHz,
175MHz,
SD2941-10
SD2941-10
2204B
VRF152
BR 3050
VRF152EMP
|
PDF
|
mrf 510
Abstract: VK200-4B VRF150 60WV MRF 283 J101 0-12V 2204B Unelco j101
Text: VRF150 PRELIMINARY 50V, 150W, 150MHz RF POWER VERTICAL MOSFET The VRF150 is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or inter-modulation
|
Original
|
VRF150
150MHz
VRF150
150MHz,
30MHz,
mrf 510
VK200-4B
60WV
MRF 283
J101
0-12V
2204B
Unelco j101
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 MS1008 RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS Features • • • • • • 30 MHz 50 VOLTS IMD = –30 dB POUT = 150 WATTS GP = 14 dB MINIMUM COMMON EMITTER CONFIGURATION
|
Original
|
MS1008
MS1007
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 2SC2510 TO SHIBA 2 S C2 5 1 0 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE Unit in mm 2~30MHz SSB LINEAR PO W ER AM PLIFIER APPLICATIONS 28V SUPPLY VOLTAGE USE Specified 28V, 28MHz Characteristics Output Power Po = 150WpEP (Min.) Power Gain Gp = 12.2dB (Min.)
|
OCR Scan
|
2SC2510
30MHz
28MHz
150WpEP
2-13B1A
100mA,
1S1555
961001EAA2'
|
PDF
|
E5OU
Abstract: 2-13B1A Ferrite core TDK 2SC2510 50wv 10ID 1S1555
Text: TOSHIBA 2SC2510 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2510 2~30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS 28V SUPPLY VOLTAGE USE Unit in mm Specified 28V, 28MHz Characteristics Output Power Po = 150WpEP (Min.) Power Gain Gp = 12.2dB (Min.)
|
OCR Scan
|
2SC2510
30MHz
28MHz
150Wpep
000MHz
001MHz
100mA
961001EAA2'
E5OU
2-13B1A
Ferrite core TDK
2SC2510
50wv
10ID
1S1555
|
PDF
|
2SC2510
Abstract: Ferrite core TDK
Text: TOSHIBA 2SC2510 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE <;r i R1 n i 2-30M Hz SSB LINEAR POWER AMPLIFIER APPLICATIONS. 28V SUPPLY VOLTAGE USE U nit in mm Specified 28V, 28MHz Characteristics Po = 150WpEp O utput Power Power Gain. G p= 12.2dB (Min.)
|
OCR Scan
|
2SC2510
2-30M
28MHz
150WpEp
--30dB
1S1555
961001EAA2'
2SC2510
Ferrite core TDK
|
PDF
|
Ferrite core TDK
Abstract: 2sc2510
Text: SILICON NPN EPITAXIAL PLANAR TYPE 2SC2510 2 '30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS. 28V SUPPLY VOLTAGE USE Unit in mm FEATURES: . Specified 28V, 28MHz Characteristics : Output Power : P o =150Wp e P : Minimum Gain : Gpe=12.2dB : Efficiency : ^c=35%(Min.)
|
OCR Scan
|
2SC2510
30MHz
28MHz
150Wp
-30dB
Tc-25
Po-150WpEp
2SC2510-----------------
150pF
1S1555
Ferrite core TDK
2sc2510
|
PDF
|
80703
Abstract: 80502
Text: May 1992 Edition 1.1 FUJITSU DATA SHEET / MB98A8040X- / 8050x- 8060x- / 8070x-30 EEPROM MEMORY CARD ELECTRICALLY ERASABLE PROGRAMMABLE READ ONLY MEMORY CARD 16K /3 2 K /6 4 K /1 2 8 K -B Y T E The Fujitsu MB98A8040x, MB98A8050x, MB98A8060x and MB98A8070x are
|
OCR Scan
|
MB98A8040X-
8050x-
8060x-
8070x-30
MB98A8040x,
MB98A8050x,
MB98A8060x
MB98A8070x
68-pin
16-bit
80703
80502
|
PDF
|
