a2v28s40
Abstract: A2V28S MIRA SDRAM p2v28s40dtp sdram 4 bank 4096 16 P2V28S20ATP-7 P2V28S20DTP-7 P2V28S30ATP-7 P2V28S40ATP-7 a2v28s40atp
Text: 128Mb Synchronous DRAM P2V28S20ATP-7,-75,-8 4-BANK x 8,388,608-WORD x 4-BIT P2V28S30ATP-7,-75,-8 (4-BANK x 4,194,304-WORD x 8-BIT) P2V28S40ATP-7,-75,-8 (4-BANK x 2,097,152-WORD x 16-BIT) 128Mb SDRAM Specification P2V28S20DTP-7,-75,-8 P2V28S30DTP-7,-75,-8
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Original
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128Mb
P2V28S20ATP-7
608-WORD
P2V28S30ATP-7
304-WORD
P2V28S40ATP-7
152-WORD
16-BIT)
P2V28S20DTP-7
a2v28s40
A2V28S
MIRA SDRAM
p2v28s40dtp
sdram 4 bank 4096 16
a2v28s40atp
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PDF
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET NEC MOS INTEGRATED CIRCUIT M PD4516421,4516821,4516161 16M bit Synchronous DRAM Description The UPD4516421, UPD4516821, uPD 4516161 are high-speed 16 777 2 1 6-bit synchronous dynamic random-access memories, each organized as 2 097 152-word x
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OCR Scan
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PD4516421
UPD4516421,
UPD4516821,
152-word
576-word
288-word
x16-bit
400-mil
44-pin
400-mil,
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PDF
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Untitled
Abstract: No abstract text available
Text: DATA SHEET MOS INTEGRATED CIRCUIT M>D42S16800,4216800,42S17800,4217800 16 M BIT DYNAMIC RAM 2 M-WORD BY 8-BIT, FAST PAGE MODE DESCRIPTION ★ The MPD42S16800, 4216800, 42S17800, 4217800 are 2 097 152 words by 8 bits dynamic CMOS RAMs. These differ in refresh cycle and the //PD42S16800, 42S17800 can execute CAS before RAS self refresh.
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OCR Scan
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D42S16800
42S17800
MPD42S16800,
42S17800,
//PD42S16800,
28-pin
juPD42S
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PDF
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UPD4216805L
Abstract: No abstract text available
Text: NEC MOS INTEGRATED CIRCUIT j u P D 42S 16805L , 4 2 1 6 8 0 5 L 3.3 V OPERATION 16 M BIT DYNAMIC RAM 2 M-WORD BY 8-BIT, HYPER PAGE MODE D escription The //PD42S16805L, 4216805L are 2 097 152 words by 8 bits dynamic CMOS RAMs w ith optional hyper page mode.
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OCR Scan
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uPD42S16805L
uPD4216805L
PD42S16805L,
4216805L
28-pin
//PD42S16805L-A60,
4216805L-A60
PD42S16805L-A70,
4216805L-A70
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PDF
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TOED101
Abstract: No abstract text available
Text: NEC M OS INTEGRATED CIRCUIT /¿PD42S16800,4216800,42S17800,4217800 16 M-BIT DYNAMIC RAM 2 M-WORD BY 8-BIT, FAST PAGE MODE DESCRIPTION The MPD42S16800, 4216800, 42S17800, 4217800 are 2 097 152 words by 8 bits dynamic CMOS RAMs. These differ in refresh cycle and the ¿iPD42S16800, 42S17800 can execute CAS before RAS self refresh.
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OCR Scan
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uPD42S16800
uPD4216800
uPD42S17800
uPD4217800
MPD42S16800,
42S17800,
iPD42S16800,
42S17800
28-pin
TOED101
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PDF
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NEC uPD 688
Abstract: CQ-111
Text: PRELIMINARY DATA SHEET NEC MOS INTEGRATED CIRCUIT /i PD4516421,4516821,4516161 16M bit Synchronous DRAM Description The UPD4516421, UPD4516821, uPD 4516161 are high-speed 16 777 216-bit synchronous dynamic random-access memories, each organized as 2 097 152-word x
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OCR Scan
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uPD4516421
uPD4516821
uPD4516161
UPD4516421,
UPD4516821,
216-bit
152-word
576-word
288-word
x16-bit
NEC uPD 688
CQ-111
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PDF
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Untitled
Abstract: No abstract text available
Text: NEC MOS INTEGRATED CIRCUIT /¿PD42S16800L, 4216800L, 42S17800L, 4217800L 3.3 V OPERATION 16 M-BIT DYNAMIC RAM 2 M-WORD BY 8-BIT, FAST PAGE MODE DESCRIPTION The ¿¿PD42S16800L, 4216800L, 42S17800L, 4217800L are 2 097 152 words by 8 bits dynamic CMOS RAMs.
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OCR Scan
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uPD42S16800L
uPD4216800L
uPD42S17800L
uPD4217800L
PD42S16800L,
4216800L,
42S17800L,
4217800L
/iPD42S16800L,
42S17800L
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PDF
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D42S17800-70
Abstract: No abstract text available
Text: DATA SHEET NEC / MOS INTEGRATED CIRCUIT //¿PD42S16800,4216800,42S17800,4217800 16 M-BIT DYNAMIC RAM 2 M-WORD BY 8-BIT, FAST PAGE MODE Description T he /¿PD42S16800, 4216800, 42S17800, 4217800 are 2 097 152 w o rd s b y 8 b its d y n a m ic CMOS RAMs. These d iffe r in refresh cycle and th e /IPD42S16800, 42S17800 can exe cute CAS be fore RAS s e lf refresh.
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OCR Scan
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uPD42S16800
uPD4216800
uPD42S17800
uPD4217800
PD42S16800,
42S17800,
/IPD42S16800,
42S17800
28-pin
D42S17800-70
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PDF
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MM15085
Abstract: No abstract text available
Text: MITSUBISHI LSIs MH2M08TNA-85L,-10L,-12L,-15L/ MH2M08TNA-85H,-10H,-12H,-15H 1 6 7 7 7 2 1 6 -B IT 2 0 9 7 1 5 2 -W 0 R D BY 8 -B IT C M 0S STATIC RAM D ESCRIPTIO N T h e M H 2 M 0 8 T N A is a 1 6 7 7 7 2 1 6 bits C M O S s ta tic R A M P IN C O N F IG U R A T IO N (TO P V IE W )
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OCR Scan
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MH2M08TNA-85L
MH2M08TNA-85H
MM15085
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PDF
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Untitled
Abstract: No abstract text available
Text: DATA SHEET MOS INTEGRATED CIRCUIT riuPD42S16800L#4216800L, 42S17800L, 4217800L 3.3 V OPERATION 16 M-BIT DYNAMIC RAM 2 M-WORD BY 8-BIT, FAST PAGE MODE DESCRIPTION * The iiPD42S16800L, 4216800L, 42S17800L, 4217800L are 2 097 152 words by 8 bits dynamic CMOS RAMs.
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OCR Scan
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riuPD42S16800L
4216800L,
42S17800L,
4217800L
iiPD42S16800L,
4217800L
PD42S16800L,
42S17800L
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PDF
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nec 28 pin
Abstract: ic tl 0741
Text: NEC MOS INTEGRATED CIRCUIT ¿¿PD 4 2 1 6 8 0 5 16 M BIT DYNAMIC RAM 2 M-WORD BY 8-BIT, HYPER PAGE MODE DESCRIPTION The /tPD4216805 is a 2 097 152 w ords by 8 bits dynamic C M O S R A M with optional hyper page mode. Hyper page mode is a kind of the page mode and is useful for the read operation.
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OCR Scan
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uPD4216805
iPD4216805
28-pin
/iPD4216805-50
PD4216805-60
//PD4216805-70
67to35
20-oo°
440l8
nec 28 pin
ic tl 0741
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PDF
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7805L
Abstract: FTO-xx
Text: PRELIMINARY DATA SHEET CMOS INTEGRATED CIRCUIT JEC juPD42S17805L, 4217805L 3.3 V OPERATION 16 M-BIT DYNAMIC RAM 2 M-WORD BY 8-BIT, HYPER PAGE MODE Description The /iPD42S17805L, 4217805L are 2 097 152 words by 8 bits CMOS dynam ic RAMs w ith optional hyper page
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OCR Scan
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uPD42S17805L
uPD4217805L
/iPD42S17805L,
4217805L
28-pin
fiPD42S17805L-A70,
4217805L-A70
7805L
FTO-xx
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PDF
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NEC uPD
Abstract: NEC AND 1994 AND sdram
Text: • b4B ?S 5S 0041123 S 34 ■ PRELIMINARY DATA SHEET_ M O S IN T E G R A T E D C IR C U IT M PD4516421,4516821,4516161 16M bit Synchronous DRAM Description The uPD4516421, uPD4516821, uPD 4516161 are high-speed 16 777 216-bit synchronous dynamic random-access memories, each organized as 2 097 152-word x
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OCR Scan
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uPD4516421
uPD4516821
uPD4516161
216-bit
152-word
576-word
288-word
x16-bit
NEC uPD
NEC AND 1994 AND sdram
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PDF
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NEC JAPAN 7805
Abstract: D42S17805
Text: PRELIMINARY DATA SHEET CMOS INTEGRATED CIRCUIT JUPD4 2 S 1 7 8 0 5 ,4 2 1 7 8 0 5 16 M BIT DYNAMIC RAM 2 M-WORD BY 8-BIT, HYPER PAGE MODE Description The /iPD42S17805, 4217805 are 2 097 152 words by 8 bits CMOS dynamic RAMs with optional hyper page mode. Hyper page mode is a kind o f the page mode and is useful for the read operation.
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OCR Scan
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/iPD42S17805,
/1PD42S17805,
28-pin
PD42S
P28LE-400A1
043tS:
i38tg:
016tg
00Slg
NEC JAPAN 7805
D42S17805
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PDF
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st vu
Abstract: cc460 Himax NEC SOI switch 043tg
Text: NEC MOS INTEGRATED CIRCUIT /¿PD42S16800L, 4216800L, 42S17800L, 4217800L 3.3 V OPERATION 16 M-BIT DYNAMIC RAM 2 M-WORD BY 8-BIT, FAST PAGE MODE DESCRIPTION The /JPD42S16800L, 4216800L, 42S17800L, 4217800L are 2 097 152 w ords by 8 bits dynamic CMOS RAMs. These differ in refresh cycle and the |iPD42S16800L, 42S17800L can execute CAS before RAS self refresh see
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OCR Scan
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uPD42S16800L
uPD4216800L
uPD42S17800L
uPD4217800L
/JPD42S16800L,
4216800L,
42S17800L,
4217800L
iPD42S16800L,
42S17800L
st vu
cc460
Himax
NEC SOI switch
043tg
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PDF
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Untitled
Abstract: No abstract text available
Text: DATA SHEET NEC / MOS INTEGRATED CIRCUIT //¿PD42S16800,4216800,42S17800,4217800 16 M-BIT DYNAMIC RAM 2 M-WORD BY 8-BIT, FAST PAGE MODE Description The iiPD42S 16800, 4216800, 42S17800, 4217800 are 2 097 152 w o rd s b y 8 b its d y n a m ic CMOS RAM s. These d iffe r in refresh cycle and th e ¿¿PD42S16800, 42S17800 can exe cute CAS be fore RAS se lf refresh.
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OCR Scan
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PD42S16800
42S17800
iiPD42S
42S17800,
PD42S16800,
28-pin
/iPD42S16800-50,
PD42S17800-50,
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PDF
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UPD4216805L
Abstract: No abstract text available
Text: DATA SHEET MOS INTEGRATED CIRCUIT / i P D 4 2 S 16805L, 4 2 1 6 8 0 5 L 3.3 V OPERATION 16 M-BIT DYNAMIC RAM 2 M-WORD BY 8-BIT, HYPER PAGE MODE D escription The ^PD42S16805L, 4216805L are 2 097 152 words by 8 bits dynamic C MOS RAMs with optional hyper page
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OCR Scan
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16805L,
uPD42S16805L
uPD4216805L
42S16805L,
4216805L
28-pin
PD42S16805L-A60,
4216805L-A60
/PD42S16805L-A70,
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PDF
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00S73
Abstract: 6805L IC-3433 KM 3502 P
Text: DATA SHEET NEC / MOS INTEGRATED CIRCUIT u P D 4 2 S 16 8 0 5 L , 4 2 1 6 8 0 5 L / 3.3 V OPERATION 16 M-BIT DYNAMIC RAM 2 M-WORD BY 8-BIT, HYPER PAGE MODE Description The /¿PD42S16805L, 4216805L are 2 097 152 words by 8 bits dynamic CMOS RAMs with optional hyper page
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OCR Scan
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uPD42S16805L
uPD4216805L
iiPD42S16805L,
4216805L
28-pin
/iPD42S16805L-A60,
4216805L-A60
IPD42S16805L-A70,
4216805L-A70
00S73
6805L
IC-3433
KM 3502 P
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PDF
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M5M54E
Abstract: Mitsubishi BiCMOS SRAM Mitsubishi ECL SRAM ECL SRAM Mitsubishi
Text: MITSUBISHI LS Is «H M5M54E04TP-12,-15 4194304-BIT 1048576-WQRD BY 4-BIT/2097152-WORD BY 2-BIT BICMOS ECL STATIC RAM DESC R IPTIO N The M 5M 54 E04 T P is a 1048576-words by 4-bits/152words by 2 -bits static RA M , fabricated with the highperformance Bi-CMOS process and designed for ultra high
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OCR Scan
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M5M54E04TP-12
4194304-BIT
1048576-WQRD
4-BIT/2097152-WORD
1048576-words
4-bits/2097152words
36-pin
152-words
M5M54E
Mitsubishi BiCMOS SRAM
Mitsubishi ECL SRAM
ECL SRAM Mitsubishi
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PDF
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4096x512x8
Abstract: upd4216805 TAA 310a
Text: DATA SHEET NEC / MOS INTEGRATED CIRCUIT / /¿P D 4 2 1 6 8 0 5 16 M-BIT DYNAMIC RAM 2 M-WORD BY 8-BIT, HYPER PAGE MODE DESCRIPTION The ^PD4216805 is a 2 097 152 w ords by 8 bits dynamic CMOS RAM w ith optional hyper page mode. Hyper page mode is a kind of the page mode and is useful for the read operation.
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OCR Scan
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uPD4216805
jiPD4216805
28-pin
28-pln
iPD4216805-50
/iPD4216805-60
/iPD4216605-70
735t8g
043to
016tg
4096x512x8
TAA 310a
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PDF
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Untitled
Abstract: No abstract text available
Text: MOS INTEGRATED CIRCUIT r>D42S16800L, 4216800L, 42S17800L, 4217800L 3.3 V OPERATION 16 M BIT DYNAMIC RAM 2 M-WORD BY 8-BIT, FAST PAGE MODE DESCRIPTION ★ The /¿PD42S16800L, 4216800L, 42S17800L, 4217800L are 2 097 152 w ords by 8 bits dynam ic CMOS RAMs. These d iffe r in refresh cycle and the ¿¿PD42S16800L, 42S17800L can execute CAS before RAS self refresh see
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OCR Scan
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D42S16800L,
4216800L,
42S17800L,
4217800L
uPD42S16800L
uPD4216800L
uPD42S17800L
uPD4217800L
42S17800L
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PDF
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IC-3185B
Abstract: No abstract text available
Text: DATA SHEET NEC / MOS INTEGRATED CIRCUIT _ _ _ _ _ _ _ / /iPD42$16800L, 4216800L, 42S17800L, 4217800L 3.3 V OPERATION 16M-BIT DYNAMIC RAM 2 M-WORD BY 8-BIT, FAST PAGE MODE D escription The /JPD42S16800L, 4216800L, 42S17800L, 4217800L are 2 097 152 words by 8 bits dynamic CMOS RAMs.
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OCR Scan
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uPD42S16800L
uPD4216800L
uPD42S17800L
uPD4217800L
16M-BIT
/JPD42S16800L,
4216800L,
42S17800L,
4217800L
//PD42S16800L,
IC-3185B
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PDF
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TRA-8R
Abstract: No abstract text available
Text: NEC MOS INTEGRATED CIRCUIT /¿PD42S16800,4216800,4 2 S 1 78 0 0 ,4217800 16 M BIT DYNAMIC RAM 2 M-WORD BY 8-BIT, FAST PAGE MODE DESCRIPTION The /iPD42S16800, 4216800, 42S17800, 4217800 are 2 097 152 words by 8 bits dynamic CMOS RAMs. These differ in refresh cycle and the jiPD42S16800, 42S17800 can execute CAS before RAS self refresh.
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OCR Scan
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uPD42S16800
uPD4216800
uPD42S17800
uPD4217800
/iPD42S16800,
42S17800,
jiPD42S16800,
42S17800
28-pin
TRA-8R
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PDF
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Untitled
Abstract: No abstract text available
Text: NEC MOS INTEGRATED CIRCUIT juPD42S16805L, 4216805L 3.3 V OPERATION 16 M-BIT DYNAMIC RAM 2 M-WORD BY 8-BIT, HYPER PAGE MODE Description The /¿PD42S16805L, 4216805L are 2 097 152 words by 8 bits dynamic CMOS RAMs w ith optional hyper page mode. Hyper page mode is a kind o f the page mode and is useful fo r the read operation.
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OCR Scan
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juPD42S16805L
4216805L
PD42S16805L,
4216805L
28-pin
/iPD42S16805L-A60,
4216805L-A60
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PDF
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