Untitled
Abstract: No abstract text available
Text: $GYDQFHLQIRUPDWLRQ $6/&06 $6/&06 $6/&06 9.ð&026V\QFKURQRXV'5$0 HDWXUHV • Organization - 4,194,304 words x 4 bits × 4 banks 16M×4) - 2,097,152 words × 8 bits × 4 banks (8M×8) - 1,048,576 words × 16 bits × 4 banks (4M×16)
|
Original
|
PDF
|
26V\QFKURQRXV
54-pin
AS4LC16M4S0-8TC
AS4LC4M16S0-8TC
AS4LC16M4S0-10TC
AS4LC8M8S0-10TC
AS4LC4M16S0-10TC
|
4lc4m16
Abstract: sdram 4 bank 4096 16 AS4LC4M16S0 4m16
Text: Advance information AS4LC8M8S0 AS4LC4M16S0 3.3V 4Mx16 and 8Mx8 CMOS synchronous DRAM Features • PC100/133 compliant • Organization - 2,097,152 words x 8 bits × 4 banks 8M×8 - 1,048,576 words × 16 bits × 4 banks (4M×16) • Fully synchronous
|
Original
|
PDF
|
AS4LC4M16S0
4Mx16
PC100/133
54-pin
AS4LC8M8S0-75TC
AS4LC8M8S0-10TC
AS4LC8M8S0-10FTC
AS4LC4M16S0-75TC
AS4LC4M16S0-8TC
4lc4m16
sdram 4 bank 4096 16
AS4LC4M16S0
4m16
|
A7R SMD Transistor
Abstract: a7r smd HYB3116807BSJ HYB3116807BSJ-50 HYB3116807BSJ-60 HYB3117807BSJ HYB3117807BSJ-50 HYB3117807BSJ-60
Text: 2M x 8-Bit Dynamic RAM HYB 3116807BSJ -50/-60 2k & 4k Refresh HYB 3117807BSJ -50/-60 BURST EDO “Pipeline Nibble Mode“ - Version Preliminary Information • 2 097 152 words by 8-bit organization • 0 to 70 °C operating temperature • Fast access and cycle time
|
Original
|
PDF
|
3116807BSJ
3117807BSJ
HYB3117807BSJ-50)
HYB3117807BSJ-60)
HYB3116807BSJ-50)
HYB3116807BSJ-60)
HYB3116
807BSJ-50/-60
P-SOJ-28
400mil)
A7R SMD Transistor
a7r smd
HYB3116807BSJ
HYB3116807BSJ-50
HYB3116807BSJ-60
HYB3117807BSJ
HYB3117807BSJ-50
HYB3117807BSJ-60
|
AS4LC4M16S0
Abstract: 4lc4m16 dab interleaving
Text: Advance information AS4LC8M8S0 AS4LC4M16S0 3.3V 4Mx16 and 8Mx8 CMOS synchronous DRAM Features • PC100/133 compliant • Organization - 2,097,152 words x 8 bits × 4 banks 8M×8 - 1,048,576 words × 16 bits × 4 banks (4M×16) • Fully synchronous
|
Original
|
PDF
|
AS4LC4M16S0
4Mx16
PC100/133
54-pin
AS4LC8M8S0-75TC
AS4LC8M8S0-10TC
AS4LC8M8S0-10FTC
AS4LC4M16S0-75TC
AS4LC4M16S0-8TC
AS4LC4M16S0
4lc4m16
dab interleaving
|
Untitled
Abstract: No abstract text available
Text: TOSHIBA TENTATIVE TC59S6416/08/04CFT/CFTL-75,-80,-10 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC 1.048.576-WORDS X4BANKSX 16-BITS SYNCHRONOUS DYNAMIC RAM 2,097,152-WORDSX4BANKSX8-BITS SYNCHRONOUS DYNAMIC RAM 4,194,304-WORDSX4BANKSX4-BITS SYNCHRONOUS DYNAMIC RAM
|
OCR Scan
|
PDF
|
TC59S6416/08/04CFT/CFTL-75
576-WORDS
16-BITS
152-WORDSX4BANKSX8-BITS
304-WORDSX4BANKSX4-BITS
TC59S6416CFT/CFTL
576-wordsX4
TC59S6408CFT/CFTL
TC59S6404CFT/CFTL
|
Untitled
Abstract: No abstract text available
Text: TOSHIBA TENTATIVE TC59S6416/08/04CFT/CFTL-75,-80 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC 1.048.576-WORDSX4BANKSx 16-BITS SYNCHRONOUS DYNAMIC RAM 2,097,152-WORDSX4BANKSX8-BITS SYNCHRONOUS DYNAMIC RAM 4,194,304-WORDSX4BANKSX4-BITS SYNCHRONOUS DYNAMIC RAM
|
OCR Scan
|
PDF
|
TC59S6416/08/04CFT/CFTL-75
576-WORDSX4BANKSx
16-BITS
152-WORDSX4BANKSX8-BITS
304-WORDSX4BANKSX4-BITS
TC59S6416CFT/CFTL
576-wordsX4
TC59S6408CFT/CFTL
TC59S6404CFT/CFTL
|
Untitled
Abstract: No abstract text available
Text: TOSHIBA TENTATIVE TC59S6416/08/04CFT/CFTL-75#-80#-10 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC 1.048.576-WORDSX4BANKSx 16-BITS SYNCHRONOUS DYNAMIC RAM 2,097,152-WORDSX4BANKSX8-BITS SYNCHRONOUS DYNAMIC RAM 4,194,304-WORDSX4BANKSX4-BITS SYNCHRONOUS DYNAMIC RAM
|
OCR Scan
|
PDF
|
TC59S6416/08/04CFT/CFTL-75#
576-WORDSX4BANKSx
16-BITS
152-WORDSX4BANKSX8-BITS
304-WORDSX4BANKSX4-BITS
TC59S6416CFT/CFTL
576-wordsX4
TC59S6408CFT/CFTL
TC59S6404CFT/CFTL
|
Untitled
Abstract: No abstract text available
Text: TOSHIBA TENTATIVE TC59S6416/08/04CFT/CFTL-75#-80#-10 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC 1 .0 4 8 .5 7 6 -W O R D S X 4 B A N K S x 16-BITS SYN C H R O N O U S D Y N A M IC R A M 2 ,0 9 7 ,1 5 2 -W O R D S X 4 B A N K S X 8 -B IT S SYN C H R O N O U S D Y N A M IC R AM
|
OCR Scan
|
PDF
|
TC59S6416/08/04CFT/CFTL-75#
16-BITS
TC59S6416CFT/CFTL
576-wordsX4
TC59S6408CFT/CFTL
TC59S6404CFT/CFTL
|
Untitled
Abstract: No abstract text available
Text: TOSHIBA TENTATIVE TC59S6416/08/04BFT/BFTL-80,-10 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC 1,048,576-WC>RDSx4BANKSx 16-BITS SYNCHRONOUS DYNAMIC RAM 2,097,152-WORDS X4BANKS X 8-BITS SYNCHRONOUS DYNAMIC RAM 4,194,304-WORDS X4BANKS X4-BITS SYNCHRONOUS DYNAMIC RAM
|
OCR Scan
|
PDF
|
TC59S6416/08/04BFT/BFTL-80
576-WC
16-BITS
152-WORDS
304-WORDS
TC59S6416BFT/BFTL
576-wordsX4
TC59S6408BFT/BFTL
TC59S6404BFT/BFTL
TC59S6416/08/04BFT/BFTL-80/
|
FT-707
Abstract: No abstract text available
Text: TO SHIBA TENTATIVE TC 59S6417/09/05B FT-70.-75.-80 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC 1 ,0 4 8 ,5 7 6 -W O R D S X 4 B A N K S X 16-BITS S YN C H R O N O U S D Y N A M IC RAM 2 ,0 9 7 ,1 5 2 -W O R D S X 4 B A N K S X 8-BITS S Y N C H R O N O U S D Y N A M IC R AM
|
OCR Scan
|
PDF
|
59S6417/09/05B
FT-70
16-BITS
TC59S6417BFT
576words
TC59S6409BFT
TC59S6405BFT
6417/09/05B
62MAX
FT-707
|
TC59S6416
Abstract: act tv hi ntt TC59S6416BFT/CFT
Text: TOSHIBA TENTATIVE TC59S6416/08/04BFT/BFTL-80#-10 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC 1.048.576-WORDSX4BANKSx 16-BITS SYNCHRONOUS DYNAMIC RAM 2,097,152-WORDSX4BANKSX8-BITS SYNCHRONOUS DYNAMIC RAM 4,194,304-WORDSX4BANKSX4-BITS SYNCHRONOUS DYNAMIC RAM
|
OCR Scan
|
PDF
|
TC59S6416/08/04B
FTL-80
576-WORDSx4BANKSx
16-BITS
152-WORDSX4BANKSX8-BITS
304-WORDSX4BANKSX4-BITS
TC59S6416BFT/BFTL
576-wordsX4
TC59S6408BFT/BFTL
TC59S6404BFT/BFTL
TC59S6416
act tv hi ntt
TC59S6416BFT/CFT
|
Untitled
Abstract: No abstract text available
Text: TOSHIBA TENTATIVE TC59S6408/04FT/FTL-80,-10 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC 2,097,152-WORDX4-BANKx8-BIT SYNCHRONOUS DYNAMIC RAM 4,194,304-WORDx4-BANKx4-BIT SYNCHRONOUS DYNAMIC RAM DESCRIPTION The TC59S6408FT/FTL and TC59S6404FT/FTL are CMOS synchronous dynamic random access
|
OCR Scan
|
PDF
|
TC59S6408/04FT/FTL-80
152-WORDX4-BANKx8-BIT
304-WORDx4-BANKx4-BIT
TC59S6408FT/FTL
TC59S6404FT/FTL
|
Untitled
Abstract: No abstract text available
Text: TO SHIBA TENTATIVE TC59S6417/09/05BFT-70.-75.-80 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC 1,048,576-WORDS X4BANKSX 16-BITS SYNCHRONOUS DYNAMIC RAM 2,097,152-WORDS X4BANKSX 8-BITS SYNCHRONOUS DYNAMIC RAM 4,194,304-WORDSx4BANKSx4-BITS SYNCHRONOUS DYNAMIC RAM
|
OCR Scan
|
PDF
|
TC59S6417/09/05BFT-70
576-WORDS
16-BITS
152-WORDS
304-WORDSx4BANKSx4-BITS
TC59S6417BFT
576words
TC59S6409BFT
TC59S6405BFT
|
Untitled
Abstract: No abstract text available
Text: TOSHIBA TENTATIVE TC59S6416/08/04CFT/CFTL-75,-80 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC 1.048.576-WORDSX4BANKSX 16-BITS SYNCHRONOUS DYNAMIC RAM 2,097,152-WORDSX4BANKSX8-BITS SYNCHRONOUS DYNAMIC RAM 4,194,304-WORDSX4BANKSX4-BITS SYNCHRONOUS DYNAMIC RAM
|
OCR Scan
|
PDF
|
TC59S6416/08/04CFT/CFTL-75
576-WORDSX4BANKSX
16-BITS
152-WORDSX4BANKSX8-BITS
304-WORDSX4BANKSX4-BITS
TC59S6416CFT/CFTL
576-wordsX4
TC59S6408CFT/CFTL
TC59S6404CFT/CFTL
|
|
Untitled
Abstract: No abstract text available
Text: TOSH IBA TENTATIVE TC59S6417/09/05BFT-65,-70,-75,-80 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC 1,048,576-WORDSx4BANKSx 16-BITS SYNCHRONOUS DYNAMIC RAM 2,097,152-WORDSX4BANKSX8-BITS SYNCHRONOUS DYNAMIC RAM 4,194,304-WORDSX4BANKSX4-BITS SYNCHRONOUS DYNAMIC RAM
|
OCR Scan
|
PDF
|
TC59S6417/09/05BFT-65
576-WORDSx4BANKSx
16-BITS
152-WORDSX4BANKSX8-BITS
304-WORDSX4BANKSX4-BITS
TC59S6417BFT
576words
TC59S6409BFT
TC59S6405BFT
TSOPII54
|
xb22
Abstract: TC59S6416 xax3
Text: T O S H IB A TENTATIVE TC59S6416/08/04BFT/BFTL-80#-10 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC 1.048.576-WORDSX4BANKSx 16-BITS SYNCHRONOUS DYNAMIC RAM 2,097,152-WORDSX4BANKSX8-BITS SYNCHRONOUS DYNAMIC RAM 4,194,304-WORDSX4BANKSX4-BITS SYNCHRONOUS DYNAMIC RAM
|
OCR Scan
|
PDF
|
TC59S6416/08/04B
FTL-80
576-WORDSx4BANKSx
16-BITS
152-WORDSX4BANKSX8-BITS
304-WORDSX4BANKSX4-BITS
TC59S6416BFT/BFTL
576-wordsX4
TC59S6408BFT/BFTL
TC59S6404BFT/BFTL
xb22
TC59S6416
xax3
|
TCM 6408
Abstract: 4096x512x8 133M TC59S6416 04CFT s6416 s6404c
Text: TOSHIBA TENTATIVE TC59S6416/08/04CFT/CFTL-7 5,-80 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC 1.048.576-WORDSX4BANKSX16-BITS SYNCHRONOUS DYNAMIC RAM 2,097,152-WORDSX4BANKSX8-BITS SYNCHRONOUS DYNAMIC RAM 4,194,304-WORDSX4BANKSX4-BITS SYNCHRONOUS DYNAMIC RAM
|
OCR Scan
|
PDF
|
TC59S6416/08/04CFT/CFTL-75
576-WC
16-BITS
152-WORDSX4BANKSX8-BITS
304-W0RDSX4BANKSX4-BITS
TC59S6416CFT/CFTL
576-wordsX
TC59S6408CFT/CFTL
TC59S6404CFT/CFTL
TC59S6416/08/04CFT/C
TCM 6408
4096x512x8
133M
TC59S6416
04CFT
s6416
s6404c
|
Untitled
Abstract: No abstract text available
Text: TOSHIBA TENTATIVE TC59S6416/08/04B FT/B FT L-80,-10 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC 1.048.576-WORDSX4BANKSX 16-BITS SYNCHRONOUS DYNAMIC RAM 2,097,152-WORDSX4BANKSX8-BITS SYNCHRONOUS DYNAMIC RAM 4,194,304-WORDSX4BANKSX4-BITS SYNCHRONOUS DYNAMIC RAM
|
OCR Scan
|
PDF
|
TC59S6416/08/04B
576-WORDSX4BANKSX
16-BITS
152-WORDSX4BANKSX8-BITS
304-WORDSX4BANKSX4-BITS
TC59S6416BFT/BFTL
576-wordsX4
TC59S6408BFT/BFTL
TC59S6404BFT/BFTL
|
Untitled
Abstract: No abstract text available
Text: TOSHIBA TENTATIVE TC59S6416/08/04CFT/CFTL-75,-80,-10 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC 1.048.576-WORDS X4BANKSX 16-BITS SYNCHRONOUS DYNAMIC RAM 2,097,152-WORDSX4BANKSX8-BITS SYNCHRONOUS DYNAMIC RAM 4,194,304-WORDSx4BANKSx4-BITS SYNCHRONOUS DYNAMIC RAM
|
OCR Scan
|
PDF
|
TC59S6416/08/04CFT/CFTL-75
576-WORDS
16-BITS
152-WORDSX4BANKSX8-BITS
304-WORDSx4BANKSx4-BITS
TC59S6416CFT/CFTL
576-wordsX4
TC59S6408CFT/CFTL
TC59S6404CFT/CFTL
|
4096x512x8
Abstract: upd4216805 TAA 310a
Text: DATA SHEET NEC / MOS INTEGRATED CIRCUIT / /¿P D 4 2 1 6 8 0 5 16 M-BIT DYNAMIC RAM 2 M-WORD BY 8-BIT, HYPER PAGE MODE DESCRIPTION The ^PD4216805 is a 2 097 152 w ords by 8 bits dynamic CMOS RAM w ith optional hyper page mode. Hyper page mode is a kind of the page mode and is useful for the read operation.
|
OCR Scan
|
PDF
|
uPD4216805
jiPD4216805
28-pin
28-pln
iPD4216805-50
/iPD4216805-60
/iPD4216605-70
735t8g
043to
016tg
4096x512x8
TAA 310a
|
Untitled
Abstract: No abstract text available
Text: TOSHIBA TENTATIVE TC59S6408/04FT/FTL-80,-10 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC 2 ,0 9 7 ,1 5 2 -W O R D X 4 -B A N K X 8 -B IT S Y N C H R O N O U S D Y N A M IC RAM 4 ,1 9 4 ,3 C 4 -W O R D X 4 -B A N K X 4 -B IT S YN C H R O N O U S D Y N A M IC RAM
|
OCR Scan
|
PDF
|
TC59S6408/04FT/FTL-80
TC59S6408FT/FTL
TC59S6404FT/FTL
|