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Altech Corporation 156.OA02.2433C RELAY SAFETY 6PST 10A 24V
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	156.OA02.2433C	Bulk	10		1	1 $147.3 10 $128.669 100 $117.0634 1000 $117.0634 10000 $117.0634	Buy Now
Verical	156.OA02.2433C		4		1	1 $173.8144 10 $173.8144 100 $173.8144 1000 $173.8144 10000 $173.8144	Buy Now
Newark	156.OA02.2433C	Bulk			1	1 $162.27 10 $150.74 100 $130.97 1000 $130.97 10000 $130.97	Buy Now
RS	156.OA02.2433C	Bulk		6 Weeks	1	1 $147.4 10 $140.03 100 $117.92 1000 $117.92 10000 $117.92	Get Quote
Master Electronics	156.OA02.2433C		4			1 $127.81 10 $114.14 100 $103.89 1000 $103.89 10000 $103.89	Buy Now

TestEquity LLC	156.OA02.2433C					1 $109.82 10 $109.82 100 $109.82 1000 $109.82 10000 $109.82	Buy Now
onsemi KSA1156OS TRANS PNP 400V 0.5A TO126-3
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DigiKey	KSA1156OS	Bulk				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Altech Corporation 156.OA12.1233C RELAY SAFETY 6PST 8A 12V
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	156.OA12.1233C	Bulk			1	1 $130.13 10 $130.13 100 $130.13 1000 $130.13 10000 $130.13	Buy Now
Mouser Electronics	156.OA12.1233C					1 $128.14 10 $123.55 100 $114.58 1000 $114.58 10000 $114.58	Get Quote
Newark	156.OA12.1233C	Bulk			1	1 $149.31 10 $138.7 100 $120.51 1000 $120.51 10000 $120.51	Buy Now
RS	156.OA12.1233C	Bulk		6 Weeks	1	1 $135.62 10 $128.84 100 $108.5 1000 $108.5 10000 $108.5	Get Quote
TestEquity LLC	156.OA12.1233C					1 $101.05 10 $101.05 100 $101.05 1000 $101.05 10000 $101.05	Buy Now
Mercury Electronic Ind Co Ltd 3QHTF21-150.156-OE 150.156 MHz XO 3.3V 2.0X1.6MM OE
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	3QHTF21-150.156-OE				5	1 - 10 $17.97 100 $7.7 1000 $6.45 10000 $6.45	Buy Now
Mercury Electronic Ind Co Ltd 18QHTF57-51.156-OE 51.156 MHz XO 1.8V 7.0X5.0 MM OE
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	18QHTF57-51.156-OE				5	1 - 10 $17.97 100 $7.7 1000 $6.45 10000 $6.45	Buy Now

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156O Datasheets (20)

Part	Manufacturer	Description	Datasheet Type	PDF
156.OA01.1222C	Altech	Connectors, Interconnects - Terminal Blocks - Adapters - RELAY SAFETY 4PST 10A 12V	Original	PDF
156.OA01.1231C	Altech	Connectors, Interconnects - Terminal Blocks - Adapters - RELAY SAFETY 4PST 10A 12V	Original	PDF
156.OA01.2422C	Altech	Connectors, Interconnects - Terminal Blocks - Adapters - RELAY SAFETY 4PST 10A 24V	Original	PDF
156.OA01.2431C	Altech	Connectors, Interconnects - Terminal Blocks - Adapters - RELAY SAFETY 4PST 10A 24V	Original	PDF
156.OA02.1224C	Altech	Connectors, Interconnects - Terminal Blocks - Adapters - RELAY SAFETY 6PST 10A 12V	Original	PDF
156.OA02.1233C	Altech	Connectors, Interconnects - Terminal Blocks - Adapters - RELAY SAFETY 6PST 10A 12V	Original	PDF
156.OA02.1242C	Altech	Connectors, Interconnects - Terminal Blocks - Adapters - RELAY SAFETY 6PST 10A 12V	Original	PDF
156.OA02.2424C	Altech	Connectors, Interconnects - Terminal Blocks - Adapters - RELAY SAFETY 6PST 10A 24V	Original	PDF
156.OA02.2433C	Altech	Connectors, Interconnects - Terminal Blocks - Adapters - RELAY SAFETY 6PST 10A 24V	Original	PDF
156.OA02.2442C	Altech	Connectors, Interconnects - Terminal Blocks - Adapters - RELAY SAFETY 6PST 10A 24V	Original	PDF
156.OA11.1222C	Altech	Connectors, Interconnects - Terminal Blocks - Adapters - RELAY SAFETY 4PST 8A 12V	Original	PDF
156.OA11.1231C	Altech	Connectors, Interconnects - Terminal Blocks - Adapters - RELAY SAFETY 4PST 8A 12V	Original	PDF
156.OA11.2422C	Altech	Connectors, Interconnects - Terminal Blocks - Adapters - RELAY SAFETY 4PST 8A 24V	Original	PDF
156.OA11.2431C	Altech	Connectors, Interconnects - Terminal Blocks - Adapters - RELAY SAFETY 4PST 8A 24V	Original	PDF

156.OA12.1224C	Altech	Connectors, Interconnects - Terminal Blocks - Adapters - RELAY SAFETY 6PST 8A 12V	Original	PDF
156.OA12.1233C	Altech	Connectors, Interconnects - Terminal Blocks - Adapters - RELAY SAFETY 6PST 8A 12V	Original	PDF
156.OA12.1242C	Altech	Connectors, Interconnects - Terminal Blocks - Adapters - RELAY SAFETY 6PST 8A 12V	Original	PDF
156.OA12.2424C	Altech	Connectors, Interconnects - Terminal Blocks - Adapters - RELAY SAFETY 6PST 8A 24V	Original	PDF
156.OA12.2433C	Altech	Connectors, Interconnects - Terminal Blocks - Adapters - RELAY SAFETY 6PST 8A 24V	Original	PDF
156.OA12.2442C	Altech	Connectors, Interconnects - Terminal Blocks - Adapters - RELAY SAFETY 6PST 8A 24V	Original	PDF

156O Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: FDC2512 150V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for	Original	PDF	FDC2512
608Z Abstract: FDC608PZ marking 58a SuperSOT -6 Text: tm FDC608PZ P-Channel 2.5V Specified PowerTrench MOSFET General Description Features This P-Channel 2.5V specified MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain	Original	PDF	FDC608PZ 608Z FDC608PZ marking 58a SuperSOT -6
Si3445DV Abstract: No abstract text available Text: Si3445DV P-Channel 1.8V Specified PowerTrench MOSFET General Description Features This P-Channel 1.8V specified MOSFET uses Fairchild’s low voltage PowerTrench process. It has been optimized for battery power management applications. • –5.5 A, –20 V.	Original	PDF	Si3445DV
Untitled Abstract: No abstract text available Text: December 1996 NDH8520C Dual N & P-Channel Enhancement Mode Field Effect Transistor General Description Features These dual N- and P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density	Original	PDF	NDH8520C
RL76 Abstract: ICL7662 Harris 7218 lCL7662 ICL7662MT INVERTER 10kW 7662 Harris A051 ICL7662IPA ICL7662CBD Text: ICL7662 S E M I C O N D U C T O R CMOS Voltage Converter April 1994 Features Description • No External Diode Needed Over Entire Temperature Range The Harris ICL7662 is a monolithic high-voltage CMOS power supply circuit which offers unique performance advantages over previously available devices. The ICL7662	Original	PDF	ICL7662 ICL7662 ICL76 ICL7662, ICL7611 ICL8069 RL76 Harris 7218 lCL7662 ICL7662MT INVERTER 10kW 7662 Harris A051 ICL7662IPA ICL7662CBD
FDR8321L Abstract: SOIC-16 n-channel 2.5v mosfet Text: August 2000 FDR8321L P-Channel MOSFET With Gate Driver For Load Switch Application General Description Features VDROP = 0.2V @ VIN= 5V, IL= 2.9A. RDS ON = 0.070 Ω VDROP = 0.2V @ VIN= 2.5V, IL= 2A. RDS(ON) = 0.105 Ω. This device is designed for configuration as a load	Original	PDF	FDR8321L OT-23 FDR8321L SOIC-16 n-channel 2.5v mosfet
NDH8520C Abstract: No abstract text available Text: December 1996 NDH8520C Dual N & P-Channel Enhancement Mode Field Effect Transistor General Description Features These dual N- and P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density	Original	PDF	NDH8520C NDH8520C
Untitled Abstract: No abstract text available Text: Si3445DV P-Channel 1.8V Specified PowerTrench MOSFET General Description Features This P-Channel 1.8V specified MOSFET uses Fairchild’s low voltage PowerTrench process. It has been optimized for battery power management applications. • –5.5 A, –20 V.	Original	PDF	Si3445DV
Untitled Abstract: No abstract text available Text: FDC640P P-Channel 2.5V PowerTrench Specified MOSFET General Description Features This P-Channel 2.5V specified MOSFET uses a rugged gate version of Fairchild’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage	Original	PDF	FDC640P FDC640P NF073
FDC633N marking convention Abstract: No abstract text available Text: March 1998 FDC633N N-Channel Enhancement Mode Field Effect Transistor General Description Features This N-Channel enhancement mode power field effect transistors is produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is	Original	PDF	FDC633N NF073 FDC633N marking convention
Untitled Abstract: No abstract text available Text: Si3455DV Single P-Channel Logic Level PowerTrench MOSFET General Description Features This P-Channel Logic Level MOSFET is produced using Fairchild’s advanced PowerTrench process. It has been optimized for battery power management applications. • –3.6 A, –30 V.	Original	PDF	Si3455DV
Untitled Abstract: No abstract text available Text: Si3456DV N-Channel PowerTrenchÒ MOSFET General Description Features These N-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor’s advanced Power Trench process that has been especially tailored to minimize the on-state resistance and yet maintain	Original	PDF	Si3456DV NF073 NF073
marking 606 Abstract: diode marking EY Text: FDC606P P-Channel 1.8V Specified PowerTrench MOSFET General Description Features This P-Channel 1.8V specified MOSFET uses Fairchild’s low voltage PowerTrench process. It has been optimized for battery power management applications. • –6 A, –12 V.	Original	PDF	FDC606P FDC606P NF073 marking 606 diode marking EY
Marking 638 Abstract: No abstract text available Text: FDC638P P-Channel 2.5V PowerTrench Specified MOSFET General Description Features This P-Channel 2.5V specified MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain	Original	PDF	FDC638P FDC638P NF073 Marking 638

CBVK741B019 Abstract: F63TNR F852 FDR835N NDH8321C Text: January 1999 NDH8321C Dual N & P-Channel Enhancement Mode Field Effect Transistor General Description Features These dual N- and P -Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very	Original	PDF	NDH8321C CBVK741B019 F63TNR F852 FDR835N NDH8321C
RSM5853P Abstract: SURFACE MOUNT schottky diode application 5V GATE TO SOURCE VOLTAGE MOSFET Text: E L E C T R O N I C RSM5853P P-Channel 20Volt D-S MOSFET With Schottky Diode □ Application -These miniature surface mount MOSFET utilize a high cell density trench CF 1206-8 TOP VIEW process to provide low RDS(on) and to provide low RDS(on) and to ensure	Original	PDF	RSM5853P 20Volt leadfr100 RSM5853P SURFACE MOUNT schottky diode application 5V GATE TO SOURCE VOLTAGE MOSFET
8212c Abstract: ICL8211 ICL8211 an027 ICL8211CPA REGULATOR IC 8212 27C zener ICL8211CBA ICL8211CTY LM199 ICL8212 Text: ICL8211, ICL8212 S E M I C O N D U C T O R Programmable Voltage Detectors April 1994 Features Description • High Accuracy Voltage Sensing and Generation The Harris ICL8211/8212 are micropower bipolar monolithic integrated circuits intended primarily for precise voltage	Original	PDF	ICL8211, ICL8212 ICL8211/8212 ICL8211 8212c ICL8211 ICL8211 an027 ICL8211CPA REGULATOR IC 8212 27C zener ICL8211CBA ICL8211CTY LM199 ICL8212
Untitled Abstract: No abstract text available Text: FDC645N N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for	Original	PDF	FDC645N
CBVK741B019 Abstract: F63TNR FDC633N FDC638P SOIC-16 Text: June 1999 FDC638P P-Channel 2.5V Specified PowerTrenchTM MOSFET General Description Features This P -Channel 2.5V specified MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance	Original	PDF	FDC638P OT-23 CBVK741B019 F63TNR FDC633N FDC638P SOIC-16
SOIC-16 Abstract: FDC654P Text: March 1998 FDC654P P-Channel Enhancement Mode Field Effect Transistor General Description Features These P-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density	Original	PDF	FDC654P OT-23 FDC654P SOIC-16
CBVK741B019 Abstract: F63TNR FDC633N FDC642P Text: FDC642P P-Channel 2.5V Specified PowerTrenchTM MOSFET General Description Features This P-Channel 2.5V specified MOSFET is produced using Fairchild's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for	Original	PDF	FDC642P CBVK741B019 F63TNR FDC633N FDC642P
CBVK741B019 Abstract: F63TNR F852 NDH8520C 28A-600 diode tnr Text: December 1996 NDH8520C Dual N & P-Channel Enhancement Mode Field Effect Transistor General Description Features These dual N- and P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density	Original	PDF	NDH8520C CBVK741B019 F63TNR F852 NDH8520C 28A-600 diode tnr
Single P-Channel, Logic Level, PowerTrench MOSFET Abstract: P-Channel Logic Level PowerTrenchTM MOSFET F63TNR F852 FDR8308P SOIC-16 Text: November 1998 FDR8308P Dual P-Channel, Logic Level, PowerTrenchTM MOSFET General Description Features The SuperSOT-8 family of P-Channel Logic Level MOSFETs have been designed to provide a low profile, small footprint alternative to industry standard SO-8 little foot type product.	Original	PDF	FDR8308P Single P-Channel, Logic Level, PowerTrench MOSFET P-Channel Logic Level PowerTrenchTM MOSFET F63TNR F852 FDR8308P SOIC-16
Untitled Abstract: No abstract text available Text: FORM 4 .0 4 - 0 0 1 B LTR REVISION DATE RELEASED APPD 0 5 -2 4 -1 0 01.040 1.885±.01 0 [47.88±0.25] 0.590 [14.99] RoHS COMPLIANT 20 02 /95 /E C NOTES: REVISION NOTIFICATION 1. LENS MATERIAL: CLEAR, LEXAN OR POLYCARBONATE I 2. SLEEVE MATERIAL: POLYCARBONATE	OCR Scan	PDF	156-O -014V CW-014V 14VDC

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156O Search Results

156O Price and Stock

Altech Corporation 156.OA02.2433C

onsemi KSA1156OS

Altech Corporation 156.OA12.1233C

Mercury Electronic Ind Co Ltd 3QHTF21-150.156-OE

Mercury Electronic Ind Co Ltd 18QHTF57-51.156-OE

156O Datasheets (20)

156O Datasheets Context Search

Untitled

608Z

Si3445DV

Untitled

RL76

FDR8321L

NDH8520C

Untitled

Untitled

FDC633N marking convention

Untitled

Untitled

marking 606

Marking 638

CBVK741B019

RSM5853P

8212c

Untitled

CBVK741B019

SOIC-16

CBVK741B019

CBVK741B019

Single P-Channel, Logic Level, PowerTrench MOSFET

Untitled