FDC638P Search Results

FDC638P Price and Stock

Filter by Manufacturer


onsemi FDC638P MOSFET P-CH 20V 4.5A SUPERSOT6
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	FDC638P	Cut Tape	6,517		1	1 $1.06 10 $0.66 100 $1.06 1000 $0.30192 10000 $0.30192	Buy Now
	FDC638P	Digi-Reel	6,517		1	1 $1.06 10 $0.66 100 $1.06 1000 $0.30192 10000 $0.30192	Buy Now
	FDC638P	Reel	6,000		3,000	1 - 10 - 100 - 1000 - 10000 $0.26169	Buy Now
Avnet Americas	FDC638P	Reel	3,000	11 Weeks	3,000	1 - 10 - 100 - 1000 - 10000 $0.20871	Buy Now
	FDC638P	Reel		0 Weeks, 2 Days	2,942	1 - 10 - 100 - 1000 - 10000 $0.20315	Buy Now
	FDC638P	Reel		11 Weeks	3,000	1 - 10 - 100 - 1000 - 10000 $0.20871	Buy Now
	FDC638P	Reel		11 Weeks	3,000	1 - 10 - 100 - 1000 - 10000 $0.20871	Buy Now
	FDC638P	Reel		11 Weeks	3,000	1 - 10 - 100 - 1000 - 10000 $0.20871	Buy Now
	FDC638P	Reel		11 Weeks	3,000	1 - 10 - 100 - 1000 - 10000 $0.20871	Buy Now
	FDC638P	Reel		11 Weeks	3,000	1 - 10 - 100 - 1000 - 10000 $0.20871	Buy Now
	FDC638P	Ammo Pack			5	1 $1.13 10 $0.866 100 $0.508 1000 $0.508 10000 $0.508	Buy Now
Mouser Electronics	FDC638P		96,971			1 $0.53 10 $0.481 100 $0.348 1000 $0.262 10000 $0.216	Buy Now
Newark	FDC638P	Cut Tape	6		1	1 $0.039 10 $0.039 100 $0.039 1000 $0.039 10000 $0.039	Buy Now
	FDC638P	Reel			3,000	1 - 10 - 100 - 1000 - 10000 $0.3	Buy Now
Future Electronics	FDC638P	Reel	3,000	21 Weeks	3,000	1 - 10 - 100 - 1000 - 10000 $0.2	Buy Now

Onlinecomponents.com	FDC638P		6,000			1 - 10 - 100 - 1000 - 10000 $0.2064	Buy Now
Bristol Electronics	FDC638P		140			1 - 10 - 100 - 1000 - 10000 -	Get Quote
TME	FDC638P		1,358		1	1 $0.6 10 $0.47 100 $0.299 1000 $0.218 10000 $0.218	Buy Now
Richardson RFPD	FDC638P				6,000	1 - 10 - 100 - 1000 - 10000 $0.16	Buy Now
Avnet Silica	FDC638P			12 Weeks	3,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
EBV Elektronik	FDC638P			13 Weeks	3,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Flip Electronics	FDC638P		21,473			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Master Electronics	FDC638P		6,000			1 - 10 - 100 - 1000 - 10000 $0.2064	Buy Now
New Advantage Corporation	FDC638P		24,000		1	1 - 10 - 100 - 1000 - 10000 $0.3071	Buy Now
onsemi FDC638P-P MOSFET N-CH 60V SUPERSOT6
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	FDC638P-P	Reel				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Fairchild Semiconductor Corporation FDC638P
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Bristol Electronics	FDC638P		5,370			1 - 10 - 100 - 1000 - 10000 -	Get Quote
	FDC638P		4,054			1 - 10 - 100 - 1000 - 10000 -	Get Quote
	FDC638P		3,000			1 - 10 - 100 - 1000 - 10000 -	Get Quote
	FDC638P		1,824			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Quest Components	FDC638P		8,800			1 $0.369 10 $0.369 100 $0.369 1000 $0.369 10000 $0.1353	Buy Now
	FDC638P		4,296			1 $0.615 10 $0.615 100 $0.615 1000 $0.246 10000 $0.2153	Buy Now
	FDC638P		103			1 $0.625 10 $0.5 100 $0.375 1000 $0.375 10000 $0.375	Buy Now
ComSIT USA	FDC638P		7,077			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Chip 1 Exchange	FDC638P		5,177			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Win Source Electronics	FDC638P		272,100			1 - 10 - 100 - 1000 $0.2268 10000 $0.2093	Buy Now
Others FDC638P AVAILABLE EU
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
ComSIT USA	FDC638P		4,500			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Fairchild Semiconductor Corporation FDC638P-NL
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Win Source Electronics	FDC638P-NL		272,000			1 - 10 - 100 - 1000 $0.253 10000 $0.227	Buy Now

FDC638P Datasheets (7)

Part	Manufacturer	Description	Datasheet Type	PDF
FDC638P	Fairchild Semiconductor	P-Channel 2.5V Specified PowerTrench MOSFET	Original	PDF
FDC638P	Fairchild Semiconductor	Single P-Channel 2.5V Specified PowerTrench MOSFET	Original	PDF
FDC638P	Fairchild Semiconductor	P-Channel 2.5V PowerTrench Specified MOSFET	Original	PDF
FDC638P	Fairchild Semiconductor	P-Channel 2.5V Specified PowerTrench MOSFET	Original	PDF
FDC638P	Toshiba	Power MOSFETs Cross Reference Guide	Original	PDF
FDC638P_NF073	Fairchild Semiconductor	Single P-Channel 2.5V Specified PowerTrench MOSFET	Original	PDF
FDC638P_NL	Fairchild Semiconductor	Single P-Channel 2.5V Specified PowerTrench MOSFET	Original	PDF

FDC638P Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
Marking 638 Abstract: No abstract text available Text: FDC638P P-Channel 2.5V PowerTrench Specified MOSFET General Description Features This P-Channel 2.5V specified MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain	Original	FDC638P FDC638P NF073 Marking 638	PDF
CBVK741B019 Abstract: F63TNR FDC633N FDC638P SOIC-16 Text: June 1999 FDC638P P-Channel 2.5V Specified PowerTrenchTM MOSFET General Description Features This P -Channel 2.5V specified MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance	Original	FDC638P OT-23 CBVK741B019 F63TNR FDC633N FDC638P SOIC-16	PDF
Untitled Abstract: No abstract text available Text: November 1998 FDC638P Single P-Channel 2.5V Specified PowerTrenchTM MOSFET General Description Features This P-Channel 2.5V specified MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the	Original	FDC638P	PDF
Untitled Abstract: No abstract text available Text: FDC638P P-Channel 2.5V PowerTrench Specified MOSFET General Description Features This P-Channel 2.5V specified MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain	Original	FDC638P	PDF
SSOT-6 Abstract: CBVK741B019 F63TNR FDC633N FDC638P Text: FDC638P P-Channel 2.5V PowerTrench Specified MOSFET General Description Features This P-Channel 2.5V specified MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain	Original	FDC638P SSOT-6 CBVK741B019 F63TNR FDC633N FDC638P	PDF
FDC638P Abstract: No abstract text available Text: FDC638P P-Channel 2.5V PowerTrench Specified MOSFET General Description Features This P-Channel 2.5V specified MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain	Original	FDC638P FDC638P	PDF
FDC633 Abstract: CBVK741B019 F63TNR FDC633N FDC638P SOIC-16 Text: June 1999 FDC638P P-Channel 2.5V Specified PowerTrenchTM MOSFET General Description Features This P -Channel 2.5V specified MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance	Original	FDC638P OT-23 FDC633 CBVK741B019 F63TNR FDC633N FDC638P SOIC-16	PDF
6TPA47M Abstract: R040 FDC638P CAP 0402 P-MOSFET ADC623A 47uF 63v CR05-103JM DO1608C-472 MOSFET sot23-6 Text: 5 4 3 2 U1 LTC3801ES6 RUN E1 D D Cc1 220pF Rc1 1 Ith/RUN PGATE 6 E2 10K 2 GND VIN Vin 2.5V-9.8V Cin 10uF 10V 5 Rcs 0.040 Rf2 3 FB S- 4 4 80.6K 1% GND 3 E3 Q1 FDC638P Rf1 174K 1% C 1 2 5 6 C 1 Cf1 opt. L1 1 4.7uH Co2 4.7uF 6.3V opt. 2 D1 MBRM120L E4 + Co1 47uF	Original	LTC3801ES6 220pF FDC638P MBRM120L LTC3801ES6, 550kHz MBRM120L, FDC638P, 1/16W, 6TPA47M R040 FDC638P CAP 0402 P-MOSFET ADC623A 47uF 63v CR05-103JM DO1608C-472 MOSFET sot23-6	PDF
Supersot6 Abstract: Supersot 6 NDC7002N FDC6303N complementary FDC655AN fdc640p FDC6301N FDC6305N FDC637AN Text: Discrete MOSFET SuperSOT-6 RDS ON Max (Ohms) @ VGS = Products VDS Min. (V) 10V 4.5V 2.5V 1.8V Qg (nC) Typ. @VGS=5V (Note) Config. Maximum Rating ID (A) PD (W) SuperSOT-6 N-Channel FDC6401N 20 Dual - 0.07 0.095 - 3.3 3 0.96 FDC6305N 20 Dual - 0.08 0.12 - 3.5	Original	FDC6401N FDC6305N FDC637AN FDC6303N FDC6301N FDC6561AN FDC645N FDC638P FDC640P FDC642P Supersot6 Supersot 6 NDC7002N FDC6303N complementary FDC655AN fdc640p FDC6301N FDC6305N FDC637AN	PDF
T101D103-CA Abstract: ntc 100-20 K 1358 fet transistor 140-103LAG-RBI T101D103 Fenwal NTC MAX1879 FDC638P MAX1679 MAX1879EUA Text: 19-2061; Rev 0; 5/01 ABLE KIT AVAIL N IO T A U L EVA Simple, Efficient, 1-Cell Li+ Pulse Charger Features ♦ Simple Design Minimizes Heat The MAX1879 initiates charging in one of three ways: battery insertion, charger power-up, or toggling the THERM pin. Key safety features include continuous voltage and	Original	MAX1879 MAX1879 T101D103-CA ntc 100-20 K 1358 fet transistor 140-103LAG-RBI T101D103 Fenwal NTC FDC638P MAX1679 MAX1879EUA	PDF
FDC638P Abstract: J-STD-020A MAX1736 MAX1736EUT41 MAX1736EUT41-T MAX1736EUT42 MAX1736EUT42-T MAX1736EVKIT Text: 19-1662; Rev 1; 10/00 KIT ATION EVALU E L B AVAILA SOT23, Single-Cell Li+ Battery Charger for Current-Limited Supply _Applications Single-Cell Li+ Portable Applications Wireless Handsets Personal Digital Assistants Digital Cameras Small Hand-Held Equipment	Original	MAX1736 FDC638P J-STD-020A MAX1736 MAX1736EUT41 MAX1736EUT41-T MAX1736EUT42 MAX1736EUT42-T MAX1736EVKIT	PDF
Untitled Abstract: No abstract text available Text: LTC3736-1 Dual 2-Phase, No RSENSETM, Synchronous Controller with Spread Spectrum FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ U ■ DESCRIPTIO The LTC 3736-1 is a 2-phase dual synchronous stepdown switching regulator controller with tracking that	Original	LTC3736-1 550kHz, 16-Lead 28-Lead 10-Pin 37361f	PDF
LTC1772B Abstract: No abstract text available Text: LTC3772B Micropower No RSENSE Constant Frequency Step-Down DC/DC Controller FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ U ■ DESCRIPTIO The LTC 3772B is a constant frequency current mode step-down DC/DC controller in a low profile 8-lead SOT-23	Original	LTC3772B 3772B OT-23 550kHz 850kHz, 16-Lead LTC3808 LTC3809/LTC3809-1 10-Lead LTC1772B	PDF
Untitled Abstract: No abstract text available Text: LTC3776 Dual 2-Phase, No RSENSETM, Synchronous Controller for DDR/QDR Memory Termination FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ U ■ DESCRIPTIO The LTC 3776 is a 2-phase dual output synchronous stepdown switching regulator controller for DDR/QDR memory	Original	LTC3776 LTC3736-1 LTC3737 LTC3831 3776fa	PDF

Untitled Abstract: No abstract text available Text: 19-1662; Rev 1; 10/00 KIT ATION EVALU E L B AVAILA SOT23, Single-Cell Li+ Battery Charger for Current-Limited Supply The MAX1736 initiates charging in one of four ways: battery insertion, charger power-up, battery voltage threshold, and by external manipulation of the EN pin.	Original	MAX1736 MAX1736	PDF
ICS9LP306 Abstract: Inventec SC7652 KBC1021 Inventec VAIL 2.0 kahuna rqa130n03 1981HD 51117 TP772 Text: GALLO 1.0 PV BUILD 2006.02.08 EE DATE POWER DATE DRAWER DESIGN CHECK RESPONSIBLE DATE CHANGE NO. REV 3 SIZE = FILE NAME : XXXX-XXXXXX-XX XXXXXXXXXXXX P/N INVENTEC TITLE VER : GALLO 1.0 SIZE CODE A3 CS SHEET REV DOC. NUMBER Model_No 1 OF A01 58 TABLE OF CONTENTS	Original	R5000 D5000 R5004 SW5004 21SUYC S5005 S5004 S5001 C5002 1000PF ICS9LP306 Inventec SC7652 KBC1021 Inventec VAIL 2.0 kahuna rqa130n03 1981HD 51117 TP772	PDF
6A4 mic DIODE Abstract: r8201 FERR-250-OHM C5100 MOSFET J8200 BS520EOF XW6800 R8202 R6803 C8207 Text: 8 6 7 2 3 4 5 1 CK APPD 1. ALL RESISTANCE VALUES ARE IN OHMS, 0.1 WATT +/- 5%. 2. ALL CAPACITANCE VALUES ARE IN MICROFARADS. 3. ALL CRYSTALS & OSCILLATOR VALUES ARE IN HERTZ. REV ZONE ECN ENG APPD DESCRIPTION OF CHANGE DATE 04 426972 ENGINEERING RELEASED DATE	Original	VR6800 VR8290 XW6800 XW6801 XW6802 XW7100 XW7101 XW7103 XW7200 XW7310 6A4 mic DIODE r8201 FERR-250-OHM C5100 MOSFET J8200 BS520EOF R8202 R6803 C8207	PDF
Q8031 Abstract: ISL9504 U7500 SLG8LP436 ISL9504 macbook "board view" macbook 820-1889 c5966 U6200 PP3V42G3H Text: 8 6 7 1. ALL RESISTANCE VALUES ARE IN OHMS, 0.1 WATT +/- 5%. 2. ALL CAPACITANCE VALUES ARE IN MICROFARADS. 3. ALL CRYSTALS & OSCILLATOR VALUES ARE IN HERTZ. 2 3 4 5 1 CK APPD M42C MLB REV ZONE ECN ENG APPD DESCRIPTION OF CHANGE DATE C 474680 PRODUCTION RELEASED	Original	ITP700FLEX LIP-SM-M42 Q8031 ISL9504 U7500 SLG8LP436 ISL9504 macbook "board view" macbook 820-1889 c5966 U6200 PP3V42G3H	PDF
RTL8211E Abstract: ISL6258A 88E1116R Marvell 88E1116R ISL6258 RTL8211 L6703 u9701 MCP79-B01 Q7055 Text: 8 6 7 2 3 4 5 1 CK APPD 1. ALL RESISTANCE VALUES ARE IN OHMS, 0.1 WATT +/- 5%. 2. ALL CAPACITANCE VALUES ARE IN MICROFARADS. 3. ALL CRYSTALS & OSCILLATOR VALUES ARE IN HERTZ. REV SCHEM,MBP 15"MLB ZONE ECN ENG APPD DESCRIPTION OF CHANGE DATE ? ? ? ? DATE ?	Original	ISL10 ISL11 RTL8211E ISL6258A 88E1116R Marvell 88E1116R ISL6258 RTL8211 L6703 u9701 MCP79-B01 Q7055	PDF
Inventec VAIL 2.0 Abstract: PC9603 Inventec INVENTEC davos INVENTEC DAVOS 3.0 GST5009 C5761 Compaq P58 VSS28 CN5-001 Text: DAVOS-DF PV-1-BUILD 2004.11.04 EE DATE DATE POWER DRAWER DESIGN CHECK RESPONSIBLE DATE CHANGE NO. REV 3 SIZE = FILE NAME : XXXX-XXXXXX-XX P/N XXXXXXXXXXXX INVENTEC TITLE VER : DAVOS-DF SIZE CODE A3 CS SHEET DOC. NUMBER REV PC9603 1 A01 OF 65 TABLE OF CONTENTS	Original	PC9603 OTS144058 10/27---update Inventec VAIL 2.0 PC9603 Inventec INVENTEC davos INVENTEC DAVOS 3.0 GST5009 C5761 Compaq P58 VSS28 CN5-001	PDF
RT9713 Abstract: C6091 C6093 R61531 c6090 C6085 c6092 inventec vail 1.0 Inventec 070912FR015S200ZU Text: VAIL SI2-BUILD-FINAL 2004.08.31 EE DATE POWER DATE DRAWER DESIGN CHECK RESPONSIBLE DATE CHANGE NO. REV 3 SIZE = FILE NAME : XXXX-XXXXXX-XX P/N XXXXXXXXXXXX INVENTEC TITLE VER : VAIL1.0 SIZE CODE A3 CS SHEET DOC. NUMBER REV Model_No 1 OF AX2 67 TABLE OF CONTENTS	Original	V/5V/12V) 31-Aug-2004 CN6035 RT9713 C6091 C6093 R61531 c6090 C6085 c6092 inventec vail 1.0 Inventec 070912FR015S200ZU	PDF
kbc1070 Abstract: fds8884 AM4825P_AP Entery-3802 ICS9LPRS355 Inventec alcor AU6371 CHENMKO_CHPZ6V2_3P fix40 Socket AM2 Text: DDD UMA SI Build Final 2007.03.30 EE DATE POWER DATE DRAWER DESIGN CHECK RESPONSIBLE DATE CHANGE NO. REV 3 SIZE = FILE NAME : XXXX-XXXXXX-XX XXXXXXXXXXXX P/N INVENTEC TITLE VER : DDD UMA SIZE CODE A3 CS SHEET DOC. NUMBER REV Model_No 1 OF AX1 48 TABLE OF CONTENTS	Original	FIX10 FIX11 FIX12 FIX37 FIX38 15-Mar-2007 kbc1070 fds8884 AM4825P_AP Entery-3802 ICS9LPRS355 Inventec alcor AU6371 CHENMKO_CHPZ6V2_3P fix40 Socket AM2	PDF
ISL9504 Abstract: b6886 PP3V42G3H NVIDIA G84m ISL9504BCRZ C8050 12v p66 apple k50 apple M75 MLB 820-2101 PP3V42 Text: 8 6 7 2 3 4 5 CK APPD OROYA 1. ALL RESISTANCE VALUES ARE IN OHMS, 0.1 WATT +/- 5%. 2. ALL CAPACITANCE VALUES ARE IN MICROFARADS. 3. ALL CRYSTALS & OSCILLATOR VALUES ARE IN HERTZ. 1 REV ZONE ECN ENG APPD DESCRIPTION OF CHANGE DATE ? ? ? ? DATE ? 03/20/2007 - DVT	Original	ISL10 ISL11 ISL9504 b6886 PP3V42G3H NVIDIA G84m ISL9504BCRZ C8050 12v p66 apple k50 apple M75 MLB 820-2101 PP3V42	PDF
Untitled Abstract: No abstract text available Text: F /\IR C H II_ D June 1999 M IC D N D U C T D R i FDC638P P-Channel 2.5V Specified PowerTrench MOSFET General Description Features This P -Channel 2.5V specified MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance	OCR Scan	FDC638P DC/567	PDF

Privacy Settings

FDC638P Search Results

FDC638P Price and Stock

onsemi FDC638P

onsemi FDC638P-P

Fairchild Semiconductor Corporation FDC638P

Others FDC638P

Fairchild Semiconductor Corporation FDC638P-NL

FDC638P Datasheets (7)

FDC638P Datasheets Context Search

Marking 638

CBVK741B019

Untitled

Untitled

SSOT-6

FDC638P

FDC633

6TPA47M

Supersot6

T101D103-CA

FDC638P

Untitled

LTC1772B

Untitled

Untitled

ICS9LP306

6A4 mic DIODE

Q8031

RTL8211E

Inventec VAIL 2.0

RT9713

kbc1070

ISL9504

Untitled