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    FDC638P Price and Stock

    onsemi FDC638P

    MOSFET P-CH 20V 4.5A SUPERSOT6
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    DigiKey FDC638P Reel 6,000 3,000
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    FDC638P Cut Tape 2,816 1
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    FDC638P Digi-Reel 1
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    Avnet Americas FDC638P Reel 6,000 11 Weeks 3,000
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    FDC638P Reel 0 Weeks, 2 Days 2,942
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    FDC638P Ammo Pack 5
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    FDC638P Reel 3,000
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    FDC638P Reel 11 Weeks 3,000
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    Mouser Electronics FDC638P 99,438
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    Verical FDC638P 6,000 3,000
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    FDC638P 6,000 27
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    FDC638P 3,000 3,000
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    FDC638P 3,000 3,000
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    Newark FDC638P Cut Tape 6 1
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    FDC638P Cut Tape 3,000
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    FDC638P Reel 3,000
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    Future Electronics FDC638P Reel 9,000 21 Weeks 3,000
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    Onlinecomponents.com FDC638P 6,000
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    Bristol Electronics FDC638P 140
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    TME FDC638P 2,975 1
    • 1 $0.645
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    Richardson RFPD FDC638P 6,000
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    Avnet Silica FDC638P 6,000 12 Weeks 3,000
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    Chip1Stop FDC638P 6,000
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    FDC638P 3,000
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    FDC638P 3,000
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    EBV Elektronik FDC638P 3,000 18 Weeks 3,000
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    Flip Electronics FDC638P 15,000
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    Master Electronics FDC638P 6,000
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    New Advantage Corporation FDC638P 24,000 1
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    onsemi FDC638P-P

    MOSFET N-CH 60V SUPERSOT6
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    DigiKey FDC638P-P Reel
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    Fairchild Semiconductor Corporation FDC638P

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Bristol Electronics FDC638P 5,370
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    FDC638P 4,054
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    FDC638P 1,824
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    Quest Components FDC638P 8,800
    • 1 $0.369
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    FDC638P 4,296
    • 1 $0.615
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    FDC638P 103
    • 1 $0.625
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    ComSIT USA FDC638P 2,915
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    Chip 1 Exchange FDC638P 5,177
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    Win Source Electronics FDC638P 272,100
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    Freescale Semiconductor FDC638P

    MOSFET Transistor, P-Channel, TSOP
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components FDC638P 7,200
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    Fairchild Semiconductor Corporation FDC638P-NL

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    Win Source Electronics FDC638P-NL 272,000
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    FDC638P Datasheets (7)

    Part ECAD Model Manufacturer Description Curated Type PDF
    FDC638P Fairchild Semiconductor P-Channel 2.5V Specified PowerTrench MOSFET Original PDF
    FDC638P Fairchild Semiconductor Single P-Channel 2.5V Specified PowerTrench MOSFET Original PDF
    FDC638P Fairchild Semiconductor P-Channel 2.5V PowerTrench Specified MOSFET Original PDF
    FDC638P Fairchild Semiconductor P-Channel 2.5V Specified PowerTrench MOSFET Original PDF
    FDC638P Toshiba Power MOSFETs Cross Reference Guide Original PDF
    FDC638P_NF073 Fairchild Semiconductor Single P-Channel 2.5V Specified PowerTrench MOSFET Original PDF
    FDC638P_NL Fairchild Semiconductor Single P-Channel 2.5V Specified PowerTrench MOSFET Original PDF

    FDC638P Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Marking 638

    Abstract: No abstract text available
    Text: FDC638P P-Channel 2.5V PowerTrench Specified MOSFET General Description Features This P-Channel 2.5V specified MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain


    Original     		PDF FDC638P FDC638P NF073 Marking 638

    CBVK741B019

    Abstract: F63TNR FDC633N FDC638P SOIC-16
    Text: June 1999 FDC638P P-Channel 2.5V Specified PowerTrenchTM MOSFET General Description Features This P -Channel 2.5V specified MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance


    Original     		PDF FDC638P OT-23 CBVK741B019 F63TNR FDC633N FDC638P SOIC-16

    Untitled

    Abstract: No abstract text available
    Text: November 1998 FDC638P Single P-Channel 2.5V Specified PowerTrenchTM MOSFET General Description Features This P-Channel 2.5V specified MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the


    Original     		PDF FDC638P

    Untitled

    Abstract: No abstract text available
    Text: FDC638P P-Channel 2.5V PowerTrench Specified MOSFET General Description Features This P-Channel 2.5V specified MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain


    Original     		PDF FDC638P

    SSOT-6

    Abstract: CBVK741B019 F63TNR FDC633N FDC638P
    Text: FDC638P P-Channel 2.5V PowerTrench Specified MOSFET General Description Features This P-Channel 2.5V specified MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain


    Original     		PDF FDC638P SSOT-6 CBVK741B019 F63TNR FDC633N FDC638P

    FDC638P

    Abstract: No abstract text available
    Text: FDC638P P-Channel 2.5V PowerTrench Specified MOSFET General Description Features This P-Channel 2.5V specified MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain


    Original     		PDF FDC638P FDC638P

    FDC633

    Abstract: CBVK741B019 F63TNR FDC633N FDC638P SOIC-16
    Text: June 1999 FDC638P P-Channel 2.5V Specified PowerTrenchTM MOSFET General Description Features This P -Channel 2.5V specified MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance


    Original     		PDF FDC638P OT-23 FDC633 CBVK741B019 F63TNR FDC633N FDC638P SOIC-16

    6TPA47M

    Abstract: R040 FDC638P CAP 0402 P-MOSFET ADC623A 47uF 63v CR05-103JM DO1608C-472 MOSFET sot23-6
    Text: 5 4 3 2 U1 LTC3801ES6 RUN E1 D D Cc1 220pF Rc1 1 Ith/RUN PGATE 6 E2 10K 2 GND VIN Vin 2.5V-9.8V Cin 10uF 10V 5 Rcs 0.040 Rf2 3 FB S- 4 4 80.6K 1% GND 3 E3 Q1 FDC638P Rf1 174K 1% C 1 2 5 6 C 1 Cf1 opt. L1 1 4.7uH Co2 4.7uF 6.3V opt. 2 D1 MBRM120L E4 + Co1 47uF


    Original     		PDF LTC3801ES6 220pF FDC638P MBRM120L LTC3801ES6, 550kHz MBRM120L, FDC638P, 1/16W, 6TPA47M R040 FDC638P CAP 0402 P-MOSFET ADC623A 47uF 63v CR05-103JM DO1608C-472 MOSFET sot23-6

    Supersot6

    Abstract: Supersot 6 NDC7002N FDC6303N complementary FDC655AN fdc640p FDC6301N FDC6305N FDC637AN
    Text: Discrete MOSFET SuperSOT-6 RDS ON Max (Ohms) @ VGS = Products VDS Min. (V) 10V 4.5V 2.5V 1.8V Qg (nC) Typ. @VGS=5V (Note) Config. Maximum Rating ID (A) PD (W) SuperSOT-6 N-Channel FDC6401N 20 Dual - 0.07 0.095 - 3.3 3 0.96 FDC6305N 20 Dual - 0.08 0.12 - 3.5


    Original     		PDF FDC6401N FDC6305N FDC637AN FDC6303N FDC6301N FDC6561AN FDC645N FDC638P FDC640P FDC642P Supersot6 Supersot 6 NDC7002N FDC6303N complementary FDC655AN fdc640p FDC6301N FDC6305N FDC637AN

    T101D103-CA

    Abstract: ntc 100-20 K 1358 fet transistor 140-103LAG-RBI T101D103 Fenwal NTC MAX1879 FDC638P MAX1679 MAX1879EUA
    Text: 19-2061; Rev 0; 5/01 ABLE KIT AVAIL N IO T A U L EVA Simple, Efficient, 1-Cell Li+ Pulse Charger Features ♦ Simple Design Minimizes Heat The MAX1879 initiates charging in one of three ways: battery insertion, charger power-up, or toggling the THERM pin. Key safety features include continuous voltage and


    Original     		PDF MAX1879 MAX1879 T101D103-CA ntc 100-20 K 1358 fet transistor 140-103LAG-RBI T101D103 Fenwal NTC FDC638P MAX1679 MAX1879EUA

    FDC638P

    Abstract: J-STD-020A MAX1736 MAX1736EUT41 MAX1736EUT41-T MAX1736EUT42 MAX1736EUT42-T MAX1736EVKIT
    Text: 19-1662; Rev 1; 10/00 KIT ATION EVALU E L B AVAILA SOT23, Single-Cell Li+ Battery Charger for Current-Limited Supply _Applications Single-Cell Li+ Portable Applications Wireless Handsets Personal Digital Assistants Digital Cameras Small Hand-Held Equipment


    Original     		PDF MAX1736 FDC638P J-STD-020A MAX1736 MAX1736EUT41 MAX1736EUT41-T MAX1736EUT42 MAX1736EUT42-T MAX1736EVKIT

    Untitled

    Abstract: No abstract text available
    Text: LTC3736-1 Dual 2-Phase, No RSENSETM, Synchronous Controller with Spread Spectrum FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ U ■ DESCRIPTIO The LTC 3736-1 is a 2-phase dual synchronous stepdown switching regulator controller with tracking that


    Original     		PDF LTC3736-1 550kHz, 16-Lead 28-Lead 10-Pin 37361f

    LTC1772B

    Abstract: No abstract text available
    Text: LTC3772B Micropower No RSENSE Constant Frequency Step-Down DC/DC Controller FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ U ■ DESCRIPTIO The LTC 3772B is a constant frequency current mode step-down DC/DC controller in a low profile 8-lead SOT-23


    Original     		PDF LTC3772B 3772B OT-23 550kHz 850kHz, 16-Lead LTC3808 LTC3809/LTC3809-1 10-Lead LTC1772B

    Untitled

    Abstract: No abstract text available
    Text: LTC3776 Dual 2-Phase, No RSENSETM, Synchronous Controller for DDR/QDR Memory Termination FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ U ■ DESCRIPTIO The LTC 3776 is a 2-phase dual output synchronous stepdown switching regulator controller for DDR/QDR memory


    Original     		PDF LTC3776 LTC3736-1 LTC3737 LTC3831 3776fa

    Untitled

    Abstract: No abstract text available
    Text: 19-1662; Rev 1; 10/00 KIT ATION EVALU E L B AVAILA SOT23, Single-Cell Li+ Battery Charger for Current-Limited Supply The MAX1736 initiates charging in one of four ways: battery insertion, charger power-up, battery voltage threshold, and by external manipulation of the EN pin.


    Original     		PDF MAX1736 MAX1736

    ICS9LP306

    Abstract: Inventec SC7652 KBC1021 Inventec VAIL 2.0 kahuna rqa130n03 1981HD 51117 TP772
    Text: GALLO 1.0 PV BUILD 2006.02.08 EE DATE POWER DATE DRAWER DESIGN CHECK RESPONSIBLE DATE CHANGE NO. REV 3 SIZE = FILE NAME : XXXX-XXXXXX-XX XXXXXXXXXXXX P/N INVENTEC TITLE VER : GALLO 1.0 SIZE CODE A3 CS SHEET REV DOC. NUMBER Model_No 1 OF A01 58 TABLE OF CONTENTS


    Original     		PDF R5000 D5000 R5004 SW5004 21SUYC S5005 S5004 S5001 C5002 1000PF ICS9LP306 Inventec SC7652 KBC1021 Inventec VAIL 2.0 kahuna rqa130n03 1981HD 51117 TP772

    6A4 mic DIODE

    Abstract: r8201 FERR-250-OHM C5100 MOSFET J8200 BS520EOF XW6800 R8202 R6803 C8207
    Text: 8 6 7 2 3 4 5 1 CK APPD 1. ALL RESISTANCE VALUES ARE IN OHMS, 0.1 WATT +/- 5%. 2. ALL CAPACITANCE VALUES ARE IN MICROFARADS. 3. ALL CRYSTALS & OSCILLATOR VALUES ARE IN HERTZ. REV ZONE ECN ENG APPD DESCRIPTION OF CHANGE DATE 04 426972 ENGINEERING RELEASED DATE


    Original     		PDF VR6800 VR8290 XW6800 XW6801 XW6802 XW7100 XW7101 XW7103 XW7200 XW7310 6A4 mic DIODE r8201 FERR-250-OHM C5100 MOSFET J8200 BS520EOF R8202 R6803 C8207

    Q8031

    Abstract: ISL9504 U7500 SLG8LP436 ISL9504 macbook "board view" macbook 820-1889 c5966 U6200 PP3V42G3H
    Text: 8 6 7 1. ALL RESISTANCE VALUES ARE IN OHMS, 0.1 WATT +/- 5%. 2. ALL CAPACITANCE VALUES ARE IN MICROFARADS. 3. ALL CRYSTALS & OSCILLATOR VALUES ARE IN HERTZ. 2 3 4 5 1 CK APPD M42C MLB REV ZONE ECN ENG APPD DESCRIPTION OF CHANGE DATE C 474680 PRODUCTION RELEASED


    Original     		PDF ITP700FLEX LIP-SM-M42 Q8031 ISL9504 U7500 SLG8LP436 ISL9504 macbook "board view" macbook 820-1889 c5966 U6200 PP3V42G3H

    RTL8211E

    Abstract: ISL6258A 88E1116R Marvell 88E1116R ISL6258 RTL8211 L6703 u9701 MCP79-B01 Q7055
    Text: 8 6 7 2 3 4 5 1 CK APPD 1. ALL RESISTANCE VALUES ARE IN OHMS, 0.1 WATT +/- 5%. 2. ALL CAPACITANCE VALUES ARE IN MICROFARADS. 3. ALL CRYSTALS & OSCILLATOR VALUES ARE IN HERTZ. REV SCHEM,MBP 15"MLB ZONE ECN ENG APPD DESCRIPTION OF CHANGE DATE ? ? ? ? DATE ?


    Original     		PDF ISL10 ISL11 RTL8211E ISL6258A 88E1116R Marvell 88E1116R ISL6258 RTL8211 L6703 u9701 MCP79-B01 Q7055

    Inventec VAIL 2.0

    Abstract: PC9603 Inventec INVENTEC davos INVENTEC DAVOS 3.0 GST5009 C5761 Compaq P58 VSS28 CN5-001
    Text: DAVOS-DF PV-1-BUILD 2004.11.04 EE DATE DATE POWER DRAWER DESIGN CHECK RESPONSIBLE DATE CHANGE NO. REV 3 SIZE = FILE NAME : XXXX-XXXXXX-XX P/N XXXXXXXXXXXX INVENTEC TITLE VER : DAVOS-DF SIZE CODE A3 CS SHEET DOC. NUMBER REV PC9603 1 A01 OF 65 TABLE OF CONTENTS


    Original     		PDF PC9603 OTS144058 10/27---update Inventec VAIL 2.0 PC9603 Inventec INVENTEC davos INVENTEC DAVOS 3.0 GST5009 C5761 Compaq P58 VSS28 CN5-001

    RT9713

    Abstract: C6091 C6093 R61531 c6090 C6085 c6092 inventec vail 1.0 Inventec 070912FR015S200ZU
    Text: VAIL SI2-BUILD-FINAL 2004.08.31 EE DATE POWER DATE DRAWER DESIGN CHECK RESPONSIBLE DATE CHANGE NO. REV 3 SIZE = FILE NAME : XXXX-XXXXXX-XX P/N XXXXXXXXXXXX INVENTEC TITLE VER : VAIL1.0 SIZE CODE A3 CS SHEET DOC. NUMBER REV Model_No 1 OF AX2 67 TABLE OF CONTENTS


    Original     		PDF V/5V/12V) 31-Aug-2004 CN6035 RT9713 C6091 C6093 R61531 c6090 C6085 c6092 inventec vail 1.0 Inventec 070912FR015S200ZU

    kbc1070

    Abstract: fds8884 AM4825P_AP Entery-3802 ICS9LPRS355 Inventec alcor AU6371 CHENMKO_CHPZ6V2_3P fix40 Socket AM2
    Text: DDD UMA SI Build Final 2007.03.30 EE DATE POWER DATE DRAWER DESIGN CHECK RESPONSIBLE DATE CHANGE NO. REV 3 SIZE = FILE NAME : XXXX-XXXXXX-XX XXXXXXXXXXXX P/N INVENTEC TITLE VER : DDD UMA SIZE CODE A3 CS SHEET DOC. NUMBER REV Model_No 1 OF AX1 48 TABLE OF CONTENTS


    Original     		PDF FIX10 FIX11 FIX12 FIX37 FIX38 15-Mar-2007 kbc1070 fds8884 AM4825P_AP Entery-3802 ICS9LPRS355 Inventec alcor AU6371 CHENMKO_CHPZ6V2_3P fix40 Socket AM2

    ISL9504

    Abstract: b6886 PP3V42G3H NVIDIA G84m ISL9504BCRZ C8050 12v p66 apple k50 apple M75 MLB 820-2101 PP3V42
    Text: 8 6 7 2 3 4 5 CK APPD OROYA 1. ALL RESISTANCE VALUES ARE IN OHMS, 0.1 WATT +/- 5%. 2. ALL CAPACITANCE VALUES ARE IN MICROFARADS. 3. ALL CRYSTALS & OSCILLATOR VALUES ARE IN HERTZ. 1 REV ZONE ECN ENG APPD DESCRIPTION OF CHANGE DATE ? ? ? ? DATE ? 03/20/2007 - DVT


    Original     		PDF ISL10 ISL11 ISL9504 b6886 PP3V42G3H NVIDIA G84m ISL9504BCRZ C8050 12v p66 apple k50 apple M75 MLB 820-2101 PP3V42

    Untitled

    Abstract: No abstract text available
    Text: F /\IR C H II_ D June 1999 M IC D N D U C T D R i FDC638P P-Channel 2.5V Specified PowerTrench MOSFET General Description Features This P -Channel 2.5V specified MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance


    OCR Scan     		PDF FDC638P DC/567