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    15A POWER TRANSISTOR FOR SMPS Search Results

    15A POWER TRANSISTOR FOR SMPS Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    15A POWER TRANSISTOR FOR SMPS Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    AO4476

    Abstract: No abstract text available
    Text: AO4476 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO4476 uses advanced trench technology to provide excellent RDS ON , low gate charge.This device is suitable for use as a high side switch in SMPS and general purpose applications. Standard Product


    Original     		PDF AO4476 AO4476

    Untitled

    Abstract: No abstract text available
    Text: AO4476 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO4476/L uses advanced trench technology to provide excellent RDS ON , low gate charge.This device is suitable for use as a high side switch in SMPS and general purpose applications.


    Original     		PDF AO4476 AO4476/L AO4476 AO4476L -AO4476L

    Untitled

    Abstract: No abstract text available
    Text: AO4476 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO4476 uses advanced trench technology to provide excellent RDS ON , low gate charge.This device is suitable for use as a high side switch in SMPS and general purpose applications. Standard Product


    Original     		PDF AO4476 AO4476

    AO4476

    Abstract: AO4476L RJA34 15a diode
    Text: AO4476 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO4476/L uses advanced trench technology to provide excellent RDS ON , low gate charge.This device is suitable for use as a high side switch in SMPS and general purpose applications.


    Original     		PDF AO4476 AO4476/L AO4476 AO4476L -AO4476L RJA34 15a diode

    AO4708

    Abstract: No abstract text available
    Text: AO4708 N-Channel Enhancement Mode Field Effect Transistor SRFET TM General Description Features TM SRFET AO4708 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS ON ,and low gate charge. This device is suitable for use as a low side FET in SMPS,


    Original     		PDF AO4708 AO4708 AO4708L Integ50 000A/us 0E-06

    Untitled

    Abstract: No abstract text available
    Text: AO4708 N-Channel Enhancement Mode Field Effect Transistor SRFET TM General Description Features TM SRFET AO4708 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS ON ,and low gate charge. This device is suitable for use as a low side FET in SMPS,


    Original     		PDF AO4708 AO4708 AO4708L 000A/us 0E-06 0E-03

    STTA1512P

    Abstract: STTA1512PI
    Text: STTA1512P/PI  TURBOSWITCH  ”A”. ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCTS CHARACTERISTICS 15A VRRM 1200V trr typ 55ns VF (max) 1.9V K A IF(AV) FEATURES AND BENEFITS A A ULTRA-FAST, SOFT AND NOISE-FREE RECOVERY. VERY LOW OVERALL POWER LOSSES IN


    Original     		PDF STTA1512P/PI STTA1512P STTA1512PI STTA1512P STTA1512PI

    15A POWER TRANSISTOR FOR SMPS

    Abstract: STTA1512P STTA1512PI IGBT trr
    Text: STTA1512P/PI  TURBOSWITCH  ”A”. ULTRA-FAST HIGH VOLTAGE DIODE PRELIMINARY DATA MAIN PRODUCTS CHARACTERISTICS 15A VRRM 1200V trr typ 55ns VF (max) 1.9V K A IF(AV) FEATURES AND BENEFITS A A ULTRA-FAST, SOFT AND NOISE-FREE RECOVERY. VERY LOW OVERALL POWER LOSSES IN


    Original     		PDF STTA1512P/PI STTA1512P STTA1512PI 15A POWER TRANSISTOR FOR SMPS STTA1512P STTA1512PI IGBT trr

    Untitled

    Abstract: No abstract text available
    Text: ACE6428B N-Channel Enhancement Mode Field Effect Transistor Description The ACE6428B uses advanced trench technology to provide excellent RDS ON , low gate charge. This device is suitable for use as a high side switch in SMPS and general purpose applications.


    Original     		PDF ACE6428B ACE6428B

    15A POWER TRANSISTOR FOR SMPS

    Abstract: STTA1512P STTA1512PI IGBT trr 15A 400 - 600V FAST DIODES
    Text: STTA1512P/PI  TURBOSWITCH  ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCT CHARACTERISTICS IF AV 15A VRRM 1200V trr (typ) 55ns VF (max) 1.9V K FEATURES AND BENEFITS ULTRA-FAST, SOFT RECOVERY. VERY LOW OVERALL POWER LOSSES IN BOTH THE DIODE AND THE COMPANION


    Original     		PDF STTA1512P/PI 2500VRMS STTA1512P STTA1512PI 15A POWER TRANSISTOR FOR SMPS STTA1512P STTA1512PI IGBT trr 15A 400 - 600V FAST DIODES

    15A POWER TRANSISTOR FOR SMPS

    Abstract: TURBOSWITCH E ULTRA-FAST HIGH VOLTAGE DIODE Noise diode mosfet 1200V 40A IGBT Transistor 1200V, 25A IGBT ultra fast morocco p3 transistor TRANSISTOR 100-6 fast recovery diode 600v 5A STTA1512P
    Text: STTA1512P/PI  TURBOSWITCH  ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCT CHARACTERISTICS IF AV 15A VRRM 1200V trr (typ) 55ns VF (max) 1.9V K FEATURES AND BENEFITS ULTRA-FAST, SOFT RECOVERY. VERY LOW OVERALL POWER LOSSES IN BOTH THE DIODE AND THE COMPANION


    Original     		PDF STTA1512P/PI 2500VRMS STTA1512P STTA1512PI 15A POWER TRANSISTOR FOR SMPS TURBOSWITCH E ULTRA-FAST HIGH VOLTAGE DIODE Noise diode mosfet 1200V 40A IGBT Transistor 1200V, 25A IGBT ultra fast morocco p3 transistor TRANSISTOR 100-6 fast recovery diode 600v 5A STTA1512P

    TP181

    Abstract: STTA1512P STTA1512PI 15A 400 - 600V FAST DIODES
    Text: STTA1512P/PI TURBOSWITCH ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCT CHARACTERISTICS IF AV 15A VRRM 1200V trr (typ) 55ns VF (max) 1.9V K FEATURES AND BENEFITS • ■ ■ ■ ■ ULTRA-FAST, SOFT RECOVERY. VERY LOW OVERALL POWER LOSSES IN BOTH THE DIODE AND THE COMPANION


    Original     		PDF STTA1512P/PI 2500VRMS STTA1512P STTA1512PI TP181 STTA1512P STTA1512PI 15A 400 - 600V FAST DIODES

    STTA1512P

    Abstract: STTA1512PI
    Text: STTA1512P/PI  TURBOSWITCH ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCT CHARACTERISTICS IF AV 15A VRRM 1200V trr (typ) 55ns VF (max) 1.9V K FEATURES AND BENEFITS • ■ ■ ■ ■ ULTRA-FAST, SOFT RECOVERY. VERY LOW OVERALL POWER LOSSES IN BOTH THE DIODE AND THE COMPANION


    Original     		PDF STTA1512P/PI 2500VRMS STTA1512P STTA1512PI STTA1512P STTA1512PI

    30n60a4d

    Abstract: mj 1504 transistor equivalent TA49345 HGT1N30N60A4D hyperfast diode reference guide TA49373 30n60* 227 30N60A4 LD26
    Text: HGT1N30N60A4D 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode General Description Features The HGT1N30N60A4D is a MOS gated high voltage switching device combining the best features of a MOSFETs and a bipolar transistor. These devices have the high input impedance of a MOSFET and the


    Original     		PDF HGT1N30N60A4D HGT1N30N60A4D 150oC. 100kHz 30n60a4d mj 1504 transistor equivalent TA49345 hyperfast diode reference guide TA49373 30n60* 227 30N60A4 LD26

    TURBOSWITCH E ULTRA-FAST HIGH VOLTAGE DIODE

    Abstract: STTA1512P STTA1512PI
    Text: STTA1512P/PI TURBOSWITCH ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCT CHARACTERISTICS IF AV 15A VRRM 1200V trr (typ) 55ns VF (max) 1.9V K FEATURES AND BENEFITS • ■ ■ ■ ■ ULTRA-FAST, SOFT RECOVERY. VERY LOW OVERALL POWER LOSSES IN BOTH THE DIODE AND THE COMPANION


    Original     		PDF STTA1512P/PI 2500VRMS STTA1512P STTA1512PI TURBOSWITCH E ULTRA-FAST HIGH VOLTAGE DIODE STTA1512P STTA1512PI

    500W TRANSISTOR AUDIO AMPLIFIER

    Abstract: IN5822 diode irfs6408 220V ac to 9V dc converter circuit DC 48v AC 220v 500w smps P-Channel MOSFET 800v SB550 transistor drive motor 10A with transistor P channel MOSFET P channel 600v 20a IGBT list of n channel power mosfet
    Text: Power for Computing Analog Discrete Interface & Logic Power Solutions for • Conversion · Distribution · Management · Minimization There’s a lot more to power than power management. Optimizing system power in computing applications requires innovative products for power conversion, distribution,


    Original     		PDF Power247TM, 500W TRANSISTOR AUDIO AMPLIFIER IN5822 diode irfs6408 220V ac to 9V dc converter circuit DC 48v AC 220v 500w smps P-Channel MOSFET 800v SB550 transistor drive motor 10A with transistor P channel MOSFET P channel 600v 20a IGBT list of n channel power mosfet

    30N60A4D

    Abstract: TA49373 30N60A4 HGTG30N60A4D TA49345 ICE 280 TA49343 30N60A
    Text: HGTG30N60A4D Data Sheet January 2000 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG30N60A4D is a MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. This device has the high input


    Original     		PDF HGTG30N60A4D HGTG30N60A4D 150oC. TA49343. TA49373. 30N60A4D TA49373 30N60A4 TA49345 ICE 280 TA49343 30N60A

    Untitled

    Abstract: No abstract text available
    Text: AO4718 N-Channel Enhancement Mode Field Effect Transistor SRFET TM General Description Features TM SRFET The AO4718 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent R DS ON ,and low gate charge. This device is suitable for use as a low side FET in


    Original     		PDF AO4718 AO4718 Figure10:

    30n60a4d

    Abstract: 30N60A4 TA49373 hgtp30n60a4 TA49343 HGTG30N60A4D LD26 TA49345 HGTG*N60A4D
    Text: HGTG30N60A4D Data Sheet December 2001 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG30N60A4D is a MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. This device has the high input


    Original     		PDF HGTG30N60A4D HGTG30N60A4D 150oC. TA49343. TA49373. 30n60a4d 30N60A4 TA49373 hgtp30n60a4 TA49343 LD26 TA49345 HGTG*N60A4D

    30N60A4D

    Abstract: No abstract text available
    Text: HGTG30N60A4D Data Sheet September 2004 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG30N60A4D is a MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. This device has the high input


    Original     		PDF HGTG30N60A4D HGTG30N60A4D 150oC. TA49343. TA49373. 30N60A4D

    Untitled

    Abstract: No abstract text available
    Text: STTA1512P/PI TURBOSWITCH "A". ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCTS CHARACTERISTICS I f a v 15A V rrm 1200V trr (typ) 55ns Vf 1.9V (max) FEATURES AND BENEFITS • ULTRA-FAST, SOFT AND NOISE-FREE RECOVERY. ■ VERY LOW OVERALL POWER LOSSES IN BOTH THE DIODE AND THE COMPANION


    OCR Scan     		PDF STTA1512P/PI STTA1512P STTA1512PI

    Untitled

    Abstract: No abstract text available
    Text: rz ^ T SGS-THOMSON 7# M ûœ ËŒ O T «® S T T A 1 5 1 2 P/PI TURBOSWITCH ”A”. ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCTS CHARACTERISTICS I f a v 15A V rrm 1200V trr (typ) 55ns Vf (max) PRELIMINARY DATA V 1.9V FEATURES AND BENEFITS • ULTRA-FAST, SOFT AND NOISE-FREE


    OCR Scan     		PDF STTA1512P STTA1512PI

    BUK454-500B

    Abstract: 1S93 DM 321 diode 1S93
    Text: PHILIPS INTERNATIONAL bSE D • 7110flSb DObHObl Philips Semiconductors PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,


    OCR Scan     		PDF 711DflSh BUK454-500B -T0220AB BUK454-500B 1S93 DM 321 diode 1S93

    Untitled

    Abstract: No abstract text available
    Text: £ ÿ j SGS-THOM SON noœilLIOraeQïlBCi STTA1512P/PI TURBOSWITCH ”A”. ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCTS CHARACTERISTICS I f a v 15A V rrm 1200V (typ) 55ns (max) 1.9V trr Vf PR ELIM IN A R Y DATA FEATURES AND BENEFITS • ULTRA-FAST, SOFT AND NOISE-FREE


    OCR Scan     		PDF STTA1512P/PI STTA1512P STTA1512PI