Untitled
Abstract: No abstract text available
Text: Prelim inary specification P h ilip s S e m icon du ctors -3 3 -S 7 PNP HDTV video transistor PHILIPS INTERNATIONAL SbE » 711DflSh D D M S b7 3 ST7 « P H I N PINNING FE A T U R E S DESCRIPTION PIN • High breakdown voltages 1 collector • High gain bandwidth product
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BFQ290
711DflSh
BC369
T172A
BFQ290
OT172A1
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BUK104-50L
Abstract: BUK104-50S BUK104-50US
Text: PHILIPS bSE INTERNATIONAL D • 711002b D 0 b 3 f l43 Monolithic temperature and overloadprotected logic level power MOSFET in a 5 pin plastic envelope, intended as a general purpose switch for automotive systems and other applications. APPLICATIONS General controller for driving
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711002b
D0b3fl43
BUK104-50L/S
BUK104-50LP/SP
pK104-50L/S
Ips/lps25
BUK104-60L/S
BUK104-50L
BUK104-50S
BUK104-50US
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12MHz
Abstract: 80C31 instruction set 87C51 80C31 80C51 8XC51 SC87C51CYF40 SI 1020H SC80C31BCGA44 zt 751
Text: Philips Semiconductors Product specification CMOS single-chip 8-bit microcontrollers DESCRIPTION 80C31/80C51/87C51 PIN CONFIGURATIONS The Philips 80C31/80C51/87C51 is a high-performance microcontroller fabricated with Philips high-density CMOS technology. The CMOS 8XC51 is functionally compatible with the
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80C31/80C51/87C51
80C31/80C51
/87C51
8XC51
80C51)
87C51)
16-bit
SQT307-2
711062b
12MHz
80C31 instruction set
87C51
80C31
80C51
SC87C51CYF40
SI 1020H
SC80C31BCGA44
zt 751
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"Angle Sensor"
Abstract: kmz 20 scale sensor obh 2390 philips hybrid
Text: Philips Semiconductors Objective specification Angle sensor hybrid KM110BH/2390 FEATURES • Linear angle measuring range >90° • Contactless, therefore wearfree • 5 V supply, ratiometric voltage output signal • Operating temperatures up to 125 °C • Sample kit with magnet available.
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KM110BH/2390
KM110BH/2390
MBD693
110BH/2390.
711002b
"Angle Sensor"
kmz 20
scale sensor
obh 2390
philips hybrid
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BUK454-600B
Abstract: BTA12-600B 10A
Text: PHILIPS INTERNATIONAL bSE D B9 711DfiEb OObHQbb 67D • P H ] Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in
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BUK454-600B
-T0220AB
BTA12-600B 10A
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74ABT374
Abstract: 74ABT374D 74ABT374DB 74ABT374N 74ABT374PW 038J 74abt374 Philips
Text: ADVANCED BiCMOS PRODUCTS 74ABT374 Octal D-type flip-flop; positive-edge trigger 3-State Product specification Supercedes data of September 1 5 ,1 9 9 3 IC23 n th October 1 9 ,1 9 9 4 Philips Semiconductors PHILIPS 7110fl2b 007Tfllb TS7 PHILIPS Philips Semiconductors Advanced BiCMOS Products
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74ABT374
711002b
64mA/-32mA
500mA
USA322-1
74ADT17/1
OT36Q-1
U-l-0-10
USA403
74ABT374
74ABT374D
74ABT374DB
74ABT374N
74ABT374PW
038J
74abt374 Philips
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CL04 12
Abstract: lr cm04 M4B7 TDA1547 CL01 CL03 CL04 QFP64 TDA1373H xo992
Text: Philips Semiconductors Objective specification General Digital Input GDIN TDA1373H FEATURES m ill • Four operating modes: - Sample Rate Conversion (SRC) mode - AD/DA mode - SLAVE-VCO mode - SLAVE-VCXO mode 1 1 1 1 1 1 ii i BITSTREAM CONVERSION Full digital sample rate conversion over a wide range of
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TDA1373H
handling260
711002b
CL04 12
lr cm04
M4B7
TDA1547
CL01
CL03
CL04
QFP64
TDA1373H
xo992
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LQFP32
Abstract: S028 UMA1000LT UMA1002 UMA1002H UMA1002T UMF1000T
Text: Philips Semiconductors Product specification Data processor for cellular radio DPROC2 UMA1002 FEATURES • Single chip solution to all the data handling and supervisory functions • Configuration to both AMPS and TACS • Additional JTACS option • l2C-bus serial control
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7110fl2b
010b417
LQFP32
S028
UMA1000LT
UMA1002
UMA1002H
UMA1002T
UMF1000T
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BFQ195
Abstract: BFG197 MCD155 NPN power transistor spice MBC964 MBB266
Text: Philips Semiconductors Product specification BFG197; BFG197/X; BFG197/XR NPN 7 GHz wideband transistor FEATURES PINNING • High power gain PIN • Low noise figure DESCRIPTION 4 BFG197 Fig. 1 Code: V5 • Gold metallization ensures excellent reliability.
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BFG197;
BFG197/X;
BFG197/XR
BFG197
OT143
BFG197
BFG197/X
BFG197A/XR
MSB014
OT143.
BFQ195
MCD155
NPN power transistor spice
MBC964
MBB266
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Product specification CATV power doubler amplifier modules FEATURES BGD102; BGD104 PINNING - SOT115C • Excellent linearity PIN • High output level DESCRIPTION 1 input • Silicon nitride passivation 2 common • 3 common 5 +VB 7
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OT115C
BGD102
BGD104
BGD102;
BGD104
DIN45004B:
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resistor MR25 philips
Abstract: resistor MR25 philips MR25 MR25 resistor MR25 philips Metal film resistor MF led MR25 MR25 DGB27 transistor nf
Text: PHILIPS INTERNATIONAL bS E D □0LE713 711Dö2b 0 2 ö I IPHIN BLU20/12 U.H.F. POWER TRANSÌSTOR N-P-N silicon planar epitaxial transistor primarily intended for use in mobile radio transmitters in the 470 MHz communications band. Features: • multi-base structure and emitter-ballasting resistors for an optimum temperature profile
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711D02b
0LE713
BLU20/12
OT-119)
711002b
0b2720
resistor MR25 philips
resistor MR25
philips MR25
MR25 resistor
MR25 philips
Metal film resistor MF
led MR25
MR25
DGB27
transistor nf
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