BTS 132 SMD
Abstract: No abstract text available
Text: PD57002-E RF power transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs Datasheet — production data Features • Excellent thermal stability ■ Common source configuration ■ POUT = 2 W with 15dB gain @ 960 MHz / 28 V ■ New RF plastic package
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PD57002-E
PowerSO-10
BTS 132 SMD
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Untitled
Abstract: No abstract text available
Text: Coaxial Precision Fixed Attenuator 50Ω 2W 15dB Maximum Ratings Operating Temperature DC to 18000 MHz Features -55°C to 100°C Storage Temperature BW-S15W2+ -55°C to 100°C* *With mated connectors, unmated, 85°C max. • DC to 18000 MHz • precise attenuation
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BW-S15W2+
FF659
2002/95/EC)
M98898
EE-7120
BW-S15W2
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HAT-15
Abstract: No abstract text available
Text: Coaxial HAT-15+ HAT-15 Precision Fixed Attenuator 50Ω 1W 15dB Maximum Ratings DC to 2000 MHz Features Operating Temperature -45°C to 100°C Storage Temperature -55°C to 100°C • excellent VSWR, 1.05:1 typ. • excellent flatness, 0.20 dB typ. to 2000 MHz
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HAT-15+
HAT-15
FF747
HAT-15(
2002/95/EC)
DC-2000
HAT-15
M98898
EDR-5087/1-15
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Untitled
Abstract: No abstract text available
Text: Coaxial VAT-15W2+ VAT-15W2 SMA Fixed Attenuator 50Ω 2W 15dB Maximum Ratings DC to 6000 MHz Features Operating Temperature -45°C to 100°C Storage Temperature -55°C to 100°C • wideband coverage, DC to 6000 MHz • 2 watt rating • rugged unibody construction
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VAT-15W2+
VAT-15W2
DC1066
VAT-15W2(
2002/95/EC)
DC-6000
VAT-15W2
M103927
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Untitled
Abstract: No abstract text available
Text: Coaxial Precision Fixed Attenuator 50Ω 5W 15dB Maximum Ratings Operating Temperature Storage Temperature BW-N15W5+ DC to 18000 MHz Features -55°C to 100°C -55°C to 100°C* * With mated connectors; unmated, 85°C max. • DC to 18000 MHz • precise attenuation
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BW-N15W5+
DC736
2002/95/EC)
M98898
EA-8722
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SD2941-10
Abstract: EE-19 transformer SD2931-10 VK200
Text: SD2941-10 RF power transistors HF/VHF/UHF N-channel MOSFETs General features • Gold metallization ■ Excellent thermal stability ■ Common source configuration ■ POUT = 175W min. with 15dB gain @ 175MHz ■ Low RDS on ■ Thermally enhanced packaging for lower
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SD2941-10
175MHz
SD2941-10
SD2931-10.
EE-19 transformer
SD2931-10
VK200
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notebook schematic diagram
Abstract: P2779A P2779AF-08SR P2779AF-08ST P2779AG-08SR P2779AG-08ST
Text: P2779A June 2005 rev 0.1 Low-Cost Notebook EMI Reduction IC Features the clock source, which provides system-wide reduction of Provides up to 15dB of EMI suppression EMI of all clock dependent signals. The P2779A allows FCC approved method of EMI attenuation
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P2779A
P2779A
20MHz
38MHz
notebook schematic diagram
P2779AF-08SR
P2779AF-08ST
P2779AG-08SR
P2779AG-08ST
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GALI-4F
Abstract: No abstract text available
Text: MMIC Amplifier GALI-4F+ Typical Performance Curves GAIN vs. TEMPERATURE GAIN vs. CURRENT INPUT POWER = -15dBm, Temperature = +25°C INPUT POWER = -15dBm, CURRENT = 50mA 16.0 16.0 15.5 - 45°C 15.5 40mA 15.0 +25°C 15.0 50mA 14.5 +85°C 14.5 60mA 14.0 dB
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-15dBm,
GALI-4F
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Untitled
Abstract: No abstract text available
Text: Plug-In LIMITER PLS-2 Typical Performance Data FREQUENCY MHz 100.0 140.0 180.0 220.0 260.0 320.0 360.0 400.0 440.0 480.0 520.0 560.0 600.0 640.0 680.0 740.0 780.0 820.0 860.0 900.0 POWER OUTPUT (15dBm IN) (3 dBm IN) (dBm) -3.51 -3.46 -3.40 -3.34 -3.29 -3.23
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15dBm
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RDF-1245C
Abstract: No abstract text available
Text: GALI-4F Performance Data NOTE: Use PDF Bookmarks to view DATA at required conditions TYPE: MMIC Amplifier MODEL: GALI-4F Reference Data: RDF-1245C S PARAMETERS are presented in dB/deg Format TEST CONDITIONS: INPUT POWER = -15dBm, Icc = 50mA, Vd = 4.34V @Temperature = +25degC
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RDF-1245C
-15dBm,
25degC
RDF-1245C
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ERA-1
Abstract: era1 ERA-1 MMIC
Text: MMIC Amplifier ERA-1+ Typical Performance Curves GAIN vs. TEMPERATURE GAIN vs. CURRENT INPUT POWER = -15dBm, Temperature = +25°C INPUT POWER = -15dBm, CURRENT = 40mA 15 15 14 - 45°C 14 32mA 13 +25°C 13 40mA 12 +85°C 12 48mA 11 dB (dB) 11 10 10 9 9
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-15dBm,
ERA-1
era1
ERA-1 MMIC
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P2040CF-08SR
Abstract: I2040C-08SR I2040C-08ST P2040C P2040C-08SR P2040C-08ST P2040C-08TR P2040C-08TT
Text: P2040C September 2005 rev 1.4 LCD Panel EMI Reduction IC Features system wide reduction of EMI of all clock dependent signals. The P2040C allows significant system cost FCC approved method of EMI attenuation. Provides up to 15dB of EMI suppression savings by reducing the number of circuit board layers and
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P2040C
P2040C
50MHz
170MHz
54MHz,
65MHz,
81MHz,
140MHz,
162MHz
P2040CF-08SR
I2040C-08SR
I2040C-08ST
P2040C-08SR
P2040C-08ST
P2040C-08TR
P2040C-08TT
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1A1305-15
Abstract: No abstract text available
Text: Model 1A1305-15 Rev. A Directional Couplers 15 dB Description The 1A1305-15 is a low profile 15dB directional coupler in an easy to use surface mount package covering the DCS and PCS bandwidths. The 1A1305-15 is ideal for power and frequency detection as well as VSWR
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1A1305-15
1A1305-15
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Untitled
Abstract: No abstract text available
Text: •Optical Fixed Attenuators ●For Multimode HRS No. Product Number CL820-0063-0 HRFC-AT1S-B05A Attenuation ±1.5 dB 5dB Reflection Attenuation c22dB CL820-0064-3 HRFC-AT1S-B10A 10dB c22dB CL820-0065-6 HRFC-AT1S-B15A 15dB c22dB CL820-0066-9 HRFC-AT1S-B20A
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CL820-0063-0
CL820-0064-3
CL820-0065-6
CL820-0066-9
HRFC-AT1S-B05A
HRFC-AT1S-B10A
HRFC-AT1S-B15A
HRFC-AT1S-B20A
c22dB
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Untitled
Abstract: No abstract text available
Text: P2180 Peak Reducing EMI Solution Features • FCC approved method of EMI attenuation. • Provides up to 15dB EMI reduction. • Generates a 1X low EMI spread spectrum clock from the input frequency. • Optimized for frequency range: o P2180: 20MHz to 40MHz
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P2180
P2180:
20MHz
40MHz
W180/1.
P218bject
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FLL21E090IK
Abstract: No abstract text available
Text: FLL21E090IK High Voltage - High Power GaAs FET FEATURES ・High Voltage Operation : VDS=28V ・High Gain: 15dB typ. at Pout=43dBm(Avg.) ・Broad Frequency Range : 2100 to 2200MHz ・Proven Reliability DESCRIPTION The FLL21E090IK is a high power GaAs FET that offers high efficiency,
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FLL21E090IK
43dBm
2200MHz
FLL21E090IK
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ED1913
Abstract: cs 905 LD511
Text: Class A Compression Amplifier LD511 - HYB DATA SHEET DESCRIPTION • 64dB typical electrical gain • 0.94VDC voltage regulator • 7ms attack time, 40ms release time • 15dB threshold adjustment The LD511 is a Class A compression amplifier which can operate over a range of DC battery voltages from 1.1V
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LD511
94VDC
LD511,
ED1913
cs 905
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GR-468
Abstract: 4053S
Text: Multi-Rate SFP Transceiver IR2 SP-MR-IR2 Features • Single 3.3V supply • 40 km reach • 15dB min, 19.5 typical link budget • Commercial and Reduced Industrial temperature available • 1550nm DFB laser • SFP MSA SFF-8074i compliant • GR 253/STM G.957 compliant
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1550nm
SFF-8074i
253/STM
SFF-8472
GR-468
LUMNDS1528-FEB2406
4053S
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MGF0920A
Abstract: IM335 pt 11400
Text: MITSUBISHI SEMICONDUCTOR<GaAs FET> MGF0920A L & S BAND GaAs FET [ SMD non – matched ] DESCRIPTION The MGF0920A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers. FEATURES • High output power Po=32dBm TYP. @f=1.9GHz,Pin=15dBm
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MGF0920A
MGF0920A
32dBm
15dBm
400mA
50pcs)
t-155
IM335
pt 11400
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Untitled
Abstract: No abstract text available
Text: SILICON NPN EPITAXIAL PLANAR TYPE 2SC3099 Unit in mm V H F - U H F BAND LOW NOISE AMPLIFIER APPLICATIONS. • Low Noise Figure. N F= 1.7dB, |S 2 ie l2 = 15dB f= 500MHz NF = 2.5dB, |S2 ie l2 = 9.5dB(f=lGHz) M A X IM U M RATINGS (Ta = 25°C) CHARACTERISTIC
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2SC3099
500MHz)
SC-59
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1SV170
Abstract: No abstract text available
Text: SMM-008, -010 100-4000 MHz Low Noise Amplifier Preliminary Data Features - 2.2dB Noise Figure - Excellent VSW R: 1.7:1 Typical - 18dB Gain and 15dBm P1dB - Operates From Single 12V Supply - Low-Cost Surface-Mount Package SMM-010 Pm 0«'iion«tKHi Ground Ground
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SMM-008,
15dBm
-65cto
1SV170
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A450-FIS
Abstract: F1-8751CXX F1-0031-40C 8122S fixed attenuator sma F1-8228S 8125s A40D-FIS 8222s ATTENUATOR
Text: The F IS In-Line Fixed Attenuator is built to meet your low reflection attenuation requirements. Each cord is custom built to accommodate up to 10 meters of cable and the connector styles of your choice. The 5dB and 10dB versions hold a +/-.5dB tolerance with the 15dB and 20dB holding a 1dB tolerance. Please specify operating wavelength. The in-line attenuator pro
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15dBSC
1310nm
F1-8324S
1550nm
F1-8125S
F1-8126S
F1-8127S
A450-FIS
F1-8751CXX
F1-0031-40C
8122S
fixed attenuator sma
F1-8228S
8125s
A40D-FIS
8222s
ATTENUATOR
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Untitled
Abstract: No abstract text available
Text: SPECIFICATION D Mot ing Cycles 500 F ilter C type Copoc i tonce i70p f ±20% Work ing Vo 1toge 10Ov Current Rating 7.5A I nsu la t ion Resistance >1Gfi FREQUENCY MHzl PCB Layout Component side ATTENUATION IdB 5 - 10 IdB 50 10dB 100 15dB 500 35dB 1000 32dB
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8-JUL-02
F-95972
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Untitled
Abstract: No abstract text available
Text: SPECIFICATION D 6 .,0 .3 Moling Cyc1es 500 F iller C type Copac i tonce 470pf±20* Working Vo 1toge 10Ov Current Rating 7.5A 1nsu1at ion Resistance >1GQ v— 0,9" FREQUENCY [MHz] 0.2 5 Solder buckets for AWG 20 Mox ATTENUATION IdB - 10 IdB 50 10dB 100 15dB
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470pfÂ
F-95972
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