MGF0920A
Abstract: IM335 pt 11400
Text: MITSUBISHI SEMICONDUCTOR<GaAs FET> MGF0920A L & S BAND GaAs FET [ SMD non – matched ] DESCRIPTION The MGF0920A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers. FEATURES • High output power Po=32dBm TYP. @f=1.9GHz,Pin=15dBm
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MGF0920A
MGF0920A
32dBm
15dBm
400mA
50pcs)
t-155
IM335
pt 11400
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MGF0920A
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR<GaAs FET> MGF0920A L & S BAND GaAs FET [ SMD non – matched ] DESCRIPTION The MGF0920A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers. FEATURES • High output power Po=32dBm TYP. @f=1.9GHz,Pin=15dBm
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MGF0920A
MGF0920A
32dBm
15dBm
400mA
50pcs)
June/2004
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MGF0920A
Abstract: n channel fet k 1118
Text: MITSUBISHI SEMICONDUCTOR<GaAs FET> Preliminary MGF0920A L & S BAND GaAs FET [ SMD non – matched ] DESCRIPTION The MGF0920A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers. FEATURES • High output power Po=32dBm TYP. @f=1.9GHz,Pin=15dBm
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MGF0920A
MGF0920A
32dBm
15dBm
400mA
n channel fet k 1118
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MITSUBISHI CAPACITOR
Abstract: MGF0920A capacitor c12 chip capacitor
Text: MITSUBISHI APPLICATION NOTE ELECTRIC SEMICONDUCTOR Date : 20 th Feb. 2007 SUBJECT: RF Characteristics of MGF0920A in 3.4 to 3.6 GHz-band SUMMARY: This application note shows RF characteristics of MGF0920A － － Measurement conditions are as follows :
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MGF0920A
MGF0920A
FREQUENCY13
CCL-870HL
MITSUBISHI CAPACITOR
capacitor c12
chip capacitor
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GP 525 smd
Abstract: MGF0920A F1190 tbd 0723
Text: MITSUBISHI SEMICONDUCTOR<GaAs FET> MGF0920A L & S BAND GaAs FET [ SMD non – matched ] DESCRIPTION The MGF0920A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers. FEATURES • High output power Po=32dBm TYP. @f=1.9GHz,Pin=15dBm
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MGF0920A
MGF0920A
32dBm
15dBm
400mA
breakdow18
GP 525 smd
F1190
tbd 0723
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MGF0920A
Abstract: 13-18V Mark GG
Text: 三菱半導体〈高周波デバイス〉 MGF0920A L & S帯高出力GaAs FET 概 要 M G F 09 2 0 A は U H F 帯 で の 増 幅 器 用 に 設 計 さ れ たN チ ャ ネ ル 外形図 単位:mm 0.80 Gate Mark Round corner GaAs FETです。
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MGF0920A
PO32dBmf1
Pin15dBm
GP18dBf1
add45f1
IDS400mA
Rg200
VDS10V
400mA
MGF0920A
13-18V
Mark GG
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Untitled
Abstract: No abstract text available
Text: < High-power GaAs FET small signal gain stage > MGF0920A L & S BAND / 1.6W SMD non - matched DESCRIPTION The MGF0920A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers. FEATURES • High output power Po=32dBm(TYP.) @f=1.9GHz,Pin=15dBm
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MGF0920A
MGF0920A
32dBm
15dBm
400mA
50pcs)
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PDF
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MGF0920A
Abstract: No abstract text available
Text: < High-power GaAs FET small signal gain stage > MGF0920A L & S BAND / 1.6W SMD non - matched DESCRIPTION The MGF0920A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers. FEATURES • High output power Po=32dBm(TYP.) @f=1.9GHz,Pin=15dBm
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MGF0920A
MGF0920A
32dBm
15dBm
400mA
50pcs)
-65ctric
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MGF4919G
Abstract: SP*02N60 SPP11N80 to-220 smd MGF1601 SPW47N60 MGF0905A SPW11N80 SPP11N60 SPP20N60
Text: МИКРОСХЕМЫ ТРАНЗИСТОРЫ 1 2 ВЫСОКОВОЛЬТНЫЕ ПОЛЕВЫЕ ТРАНЗИСТОРЫ CoolMOS CoolMOS полевые транзисторы Infineon – это новое поколение высоковольтных силовых транзисторов со сверхнизким сопротивлением в открытом состоянии
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SPP02N60
SPP03N60
SPP04N60
SPP07N60
SPP11N60
SPP20N60
SPW11N60
SPW20N60
SPW47N60
SPP02N80
MGF4919G
SP*02N60
SPP11N80
to-220 smd
MGF1601
SPW47N60
MGF0905A
SPW11N80
SPP11N60
SPP20N60
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C42V5964
Abstract: MGF1302 TRANSISTOR MGF1601 MGFC1402 M57721 M67760LC H2 MARKING SOT-89 mmIC 2SC5125 MITSUBISHI M57710-A M68776
Text: Please Read “Notes” First! Contents Notes Contact Addresses MITSUBISHI ELECTRIC CORPORATION Contents Si Devices GaAs Devices Optical Devices Applications Quality Assurance and Reliability Testing Optical Modules Top Page © MITSUBISHI ELECTRIC CORPORATION
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M6STA-005VA/WA/SA
MF-156STA-006VA/WA/SA
MF-156SRA-002VA/WA/SA
MF-622STA-004VA/WA/SA
MF-622STA-005VA/WA/SA
MF-622STA-006VA/WA/SA
MF-622SRA-002VA/WA/SA
MF-2500STA-002VA/WA,
003VA/WA,
004VA/WA
C42V5964
MGF1302 TRANSISTOR
MGF1601
MGFC1402
M57721
M67760LC
H2 MARKING SOT-89 mmIC
2SC5125
MITSUBISHI M57710-A
M68776
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MGF4937
Abstract: MGFG5H1503 MGF4937AM GD-32 MGFG5H1502 MGF0904 mgfc39v5964 MGF2430 MGF0909A BA012J1
Text: HIGH FREQUENCY DEVICES High Frequency Devices The Best Solution for Realizing the Information Era. Communication networks, such as high speed Internet, video-on-demand and high-speed data communcation, are developing rapidly. We are ready to offer the best solution to the systems for realizing the information era by providing a variety of GaAs/GaN products designed
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H-CX587-R
KI-1311
MGF4937
MGFG5H1503
MGF4937AM
GD-32
MGFG5H1502
MGF0904
mgfc39v5964
MGF2430
MGF0909A
BA012J1
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MGFS45H2201G
Abstract: MGFS40H2201G MGF0909A sirio mgfc36v-a QVC12 MGF1907A MGF4961 mgf4941al mitsubishi mgf
Text: GaAs DEVICES GENERAL CATALOG MITSUBISHI GaAs solutions for communication networks in the information era. Multimedia Network 1 PRODUCTS 3 APPLICATION 7 PACKAGE 9 BS / CS PDC/GSM/CDMA Multimedia Network WiMAX Features We e provide provide a variety variety
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H-CR587-J
KI-0612
MGFS45H2201G
MGFS40H2201G
MGF0909A
sirio
mgfc36v-a
QVC12
MGF1907A
MGF4961
mgf4941al
mitsubishi mgf
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOFkGaAs FET> Preliminary MGF0920A L & S BAND G a As FET [ S M D non - matched ] DESCRIPTION The MGF0920A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers. FEATURES High output power Po=32dBm TYP. @ f=1,9GHz,Pin=15dBm
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OCR Scan
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MGF0920A
MGF0920A
32dBm
15dBm
400mA
volta164
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