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    SPW47N60 Search Results

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    SPW47N60 Price and Stock

    Infineon Technologies AG SPW47N60C3FKSA1

    MOSFET N-CH 650V 47A TO247-3
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    DigiKey SPW47N60C3FKSA1 Tube 568 1
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    Avnet Americas SPW47N60C3FKSA1 Bulk 16 Weeks, 4 Days 1
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    SPW47N60C3FKSA1 Tube 15 Weeks 30
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    Newark SPW47N60C3FKSA1 Bulk 5,642 1
    • 1 $8.89
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    Chip One Stop SPW47N60C3FKSA1 Tube 98
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    EBV Elektronik SPW47N60C3FKSA1 74,400 16 Weeks 240
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    New Advantage Corporation SPW47N60C3FKSA1 59,520 1
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    Win Source Electronics SPW47N60C3FKSA1 49,999
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    Infineon Technologies AG SPW47N60CFDFKSA1

    MOSFET N-CH 600V 46A TO247-3
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    DigiKey SPW47N60CFDFKSA1 Tube 240
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    TME SPW47N60CFDFKSA1 1
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    EBV Elektronik SPW47N60CFDFKSA1 16 Weeks 240
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    Infineon Technologies AG SPW47N60CFDXK

    Trans MOSFET N-CH 600V 46A 3-Pin(3+Tab) TO-247 - Rail/Tube (Alt: SPW47N60CFDFKSA1)
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    Avnet Americas SPW47N60CFDXK Tube 15 Weeks 240
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    Infineon Technologies AG SPW47N60C3

    MOSFETs N-Ch 650V 47A TO247-3 CoolMOS C3
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    Mouser Electronics SPW47N60C3 1,052
    • 1 $13.18
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    Bristol Electronics SPW47N60C3 505
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    Quest Components SPW47N60C3 48
    • 1 $16.3519
    • 10 $14.535
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    SPW47N60C3 10
    • 1 $14.535
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    SPW47N60C3 2
    • 1 $13
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    TME SPW47N60C3 98 1
    • 1 $16.09
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    ComSIT USA SPW47N60C3 270
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    Win Source Electronics SPW47N60C3 50,000
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    Infineon Technologies AG SPW47N60CFD

    MOSFETs N-Ch 600V 46A TO247-3 CoolMOS CFD
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    Mouser Electronics SPW47N60CFD
    • 1 $12.67
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    Quest Components SPW47N60CFD 2
    • 1 $17.565
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    Chip-Germany GmbH SPW47N60CFD 8
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    SPW47N60 Datasheets (13)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SPW47N60 Infineon Technologies TRANSISTOR,MOSFET,N-CHANNEL,600V V(BR)DSS,47A I(D),TO-247VAR Original PDF
    SPW47N60C2 Infineon Technologies Cool MOS Power Transistor Original PDF
    SPW47N60C2 Infineon Technologies CoolMOS Power MOSFET, 600V, TO-247, RDSon=0.07Ohm, 47.0A Original PDF
    SPW47N60C3 Infineon Technologies Cool MOS Power Transistor Original PDF
    SPW47N60C3 Infineon Technologies Cool MOS Power Transistor Original PDF
    SPW47N60C3 Infineon Technologies N-Channel MOSFETs (>500V - 900V); Package: PG-TO247-3; VDS (max): 600.0 V; Package: TO-247; RDS(ON) @ TJ=25°C VGS=10: 70.0 mOhm; ID(max) @ TC=25°C: 47.0 A; IDpuls (max): 141.0 A; Original PDF
    SPW47N60C3 Infineon Technologies CoolMOS Power MOSFET, 600V, TO-247, RDSon=0.07, 47.0A Original PDF
    SPW47N60C3FKSA1 Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 650V 47A TO-247 Original PDF
    SPW47N60CFD Infineon Technologies N-Channel MOSFETs (>500V - 900V); Package: PG-TO247-3; VDS (max): 600.0 V; Package: TO-247; RDS(ON) @ TJ=25°C VGS=10: 83.0 mOhm; ID(max) @ TC=25°C: 46.0 A; IDpuls (max): 118.0 A; Original PDF
    SPW47N60CFD Infineon Technologies CoolMOS Power Transistor Original PDF
    SPW47N60CFDFKSA1 Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 600V 46A TO-247 Original PDF
    SPW47N60S5 Infineon Technologies Cool MOS Power Transistor Original PDF
    SPW47N60S5 Infineon Technologies CoolMOS Power MOSFET, 600V, TO-247, RDSon=0.07Ohm, 47.0A Original PDF

    SPW47N60 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    SPW47N60C3

    Abstract: 47n60c3
    Text: SPW47N60C3 Preliminary data Cool MOS Power Transistor Feature • New revolutionary high voltage technology Product Summary • Ultra low gate charge VDS @ Tjmax 650 V • Periodic avalanche rated RDS on 0.07 Ω • Extreme dv/dt rated ID 47 A • Ultra low effective capacitances


    Original     		SPW47N60C3 P-TO247 Q67040-S4491 47N60C3 SPW47N60C3 47n60c3 PDF

    47N60

    Abstract: 47N60S5 SPW47N60S5 P-TO247
    Text: SPW47N60S5 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Worldwide best RDS on in TO 247 VDS 600 V RDS(on) 0.07 Ω ID 47 A • Ultra low gate charge P-TO247 • Periodic avalanche rated • Extreme dv/dt rated


    Original     		SPW47N60S5 P-TO247 Q67040-S4240 47N60S5 47N60 47N60S5 SPW47N60S5 P-TO247 PDF

    47n60cfd

    Abstract: 47N60 SPW47N60CFD marking code s46 47N60C
    Text: SPW47N60CFD CoolMOS TM Power Transistor Product Summary Features V DS • New revolutionary high voltage technology 600 0.083 Ω R DS on ,max • Intrinsic fast-recovery body diode V ID 46 A • Extremely low reverse recovery charge • Ultra low gate charge


    Original     		SPW47N60CFD PG-TO247 Q67045A5051 47N60CFD 47n60cfd 47N60 SPW47N60CFD marking code s46 47N60C PDF

    47N60S5

    Abstract: SPW47N60S5
    Text: SPW47N60S5 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Worldwide best RDS on in TO 247 VDS 600 V RDS(on) 0.07 Ω ID 47 A • Ultra low gate charge P-TO247 • Periodic avalanche rated • Extreme dv/dt rated


    Original     		SPW47N60S5 P-TO247 Q67040-S4240 47N60S5 47N60S5 SPW47N60S5 PDF

    47N60C2

    Abstract: 2002-08-12 SPW47N60C2 47n60 SDP06S60 TID10
    Text: SPW47N60C2 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology Product Summary • Worldwide best RDS on in TO 247 VDS 600 V • Ultra low gate charge RDS(on) 0.07 Ω • Periodic avalanche rated ID 47 A • Extreme dv/dt rated


    Original     		SPW47N60C2 P-TO247 Q67040-S4323 47N60C2 47N60C2 2002-08-12 SPW47N60C2 47n60 SDP06S60 TID10 PDF

    47n60cfd

    Abstract: SPW47N60CFD S47A 47N60C Q67045A5051 JESD22 47N60
    Text: SPW47N60CFD CoolMOS TM Power Transistor Product Summary Features V DS • New revolutionary high voltage technology 600 0.083 Ω R DS on ,max • Intrinsic fast-recovery body diode V ID 46 A • Extremely low reverse recovery charge • Ultra low gate charge


    Original     		SPW47N60CFD PG-TO247 Q67045A5051 47N60CFD 47n60cfd SPW47N60CFD S47A 47N60C Q67045A5051 JESD22 47N60 PDF

    47n60c3

    Abstract: SPW47N60C3 SDP06S60 617 300
    Text: SPW47N60C3 Cool MOS Power Transistor Feature VDS @ Tjmax 650 V RDS on 0.07 Ω ID 47 A • New revolutionary high voltage technology • Worldwide best R DS(on) in TO 247 • Ultra low gate charge P-TO247 • Periodic avalanche rated • Extreme dv/dt rated


    Original     		SPW47N60C3 P-TO247 Q67040-S4491 47N60C3 47n60c3 SPW47N60C3 SDP06S60 617 300 PDF

    47N60S5

    Abstract: 47n60s5 to247 SPW47N60S5 47N60 P-TO247 47n60s
    Text: SPW47N60S5 Preliminary data Cool MOS =Power Transistor COOLMOS Power Semiconductors •=New revolutionary high voltage technology Product Summary • Worldwide best RDS on in TO 247 • Ultra low gate charge VDS @ Tjmax 650 V •=Periodic avalanche rated


    Original     		SPW47N60S5 P-TO247 SPWx0N60S5 Q67040-S4240 47N60S5 47N60S5 47n60s5 to247 SPW47N60S5 47N60 P-TO247 47n60s PDF

    47n60cfd

    Abstract: SPW47N60CFD 47n60 JESD22 Q67045A5051 marking code s46
    Text: SPW47N60CFD CoolMOSTM Power Transistor Product Summary Features V DS • New revolutionary high voltage technology 600 0.083 Ω R DS on ,max • Intrinsic fast-recovery body diode V ID 46 A • Extremely low reverse recovery charge • Ultra low gate charge


    Original     		SPW47N60CFD PG-TO247 Q67045A5051 47N60CFD 47n60cfd SPW47N60CFD 47n60 JESD22 Q67045A5051 marking code s46 PDF

    47N60S5

    Abstract: 47N60 F47A DT 94 SPW47N60S5 47n60s5 to247
    Text: SPW47N60S5 Preliminary data Cool MOS Power-Transistor • New revolutionary high voltage technology · Worldwide best RDS on in TO 247 · Ultra low gate charge · Periodic avalanche rated · Extreme dv/dt rated · Optimized capacitances · Improved noise immunity


    Original     		SPW47N60S5 SPWx0N60S5 P-TO247 47N60S5 Q67040-S4240 SPW47N60S5 47N60S5 47N60 F47A DT 94 47n60s5 to247 PDF

    47n60s5

    Abstract: SPW47N60S5 47n60 SPW47N60 47n60s
    Text: SPW47N60S5 Final data Cool MOS Power Transistor • New revolutionary high voltage technology Product Summary • Worldwide best RDS on in TO 247 • Ultra low gate charge VDS @ Tjmax 650 V • Periodic avalanche rated RDS(on) 0.07 Ω • Extreme dv/dt rated


    Original     		SPW47N60S5 P-TO247 Q67040-S4240 47N60S5 47n60s5 SPW47N60S5 47n60 SPW47N60 47n60s PDF

    47N60S5

    Abstract: 47n60 SPW47N60S5
    Text: SPW47N60S5 Preliminary data D,2 Cool MOS Power Transistor • New revolutionary high voltage technology • Worldwide best RDS on in TO 247 • Ultra low gate charge G,1 • Periodic avalanche proved 1 S,3 2 3 • Extreme dv/dt rated COOLMOS • Optimized capacitances


    Original     		SPW47N60S5 SPWx0N60S5 SPW47N60S5 P-TO247 47N60S5 Q67040-S4140 47N60S5 47n60 PDF

    47n60C3

    Abstract: 47N60C SPW47N60C3 SDP06S60
    Text: SPW47N60C3 Final data Cool MOS Power Transistor VDS @ Tjmax 650 V RDS on 0.07 Ω ID 47 A Feature • New revolutionary high voltage technology • Worldwide best R DS(on) in TO 247 • Ultra low gate charge P-TO247 • Periodic avalanche rated • Extreme dv/dt rated


    Original     		SPW47N60C3 P-TO247 Q67040-S4491 47N60C3 47n60C3 47N60C SPW47N60C3 SDP06S60 PDF

    47N60C2

    Abstract: SPW47N60C2 SDP06S60
    Text: SPW47N60C2 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology Product Summary • Worldwide best RDS on in TO 247 VDS 600 V • Ultra low gate charge RDS(on) 0.07 Ω • Periodic avalanche rated ID 47 A • Extreme dv/dt rated


    Original     		SPW47N60C2 P-TO247 Q67040-S4323 47N60C2 47N60C2 SPW47N60C2 SDP06S60 PDF

    47n60c3

    Abstract: SPW47N60C3 47N60 SDP06S60 tp 2116 Pulse-10
    Text: SPW47N60C3 Preliminary data Cool MOS =Power Transistor Feature •=New revolutionary high voltage technology Product Summary • Ultra low gate charge VDS @ Tjmax 650 V •=Periodic avalanche rated RDS on 0.07 Ω • Extreme dv/dt rated ID 47 A •=Ultra low effective capacitances


    Original     		SPW47N60C3 P-TO247 Q67040-S4491 47N60C3 47n60c3 SPW47N60C3 47N60 SDP06S60 tp 2116 Pulse-10 PDF

    47n60c3

    Abstract: SPW47N60C3 47N60 SDP06S60 47N60C
    Text: SPW47N60C3 Final data Cool MOS Power Transistor Feature VDS @ Tjmax 650 V RDS on 0.07 Ω ID 47 A • New revolutionary high voltage technology • Worldwide best R DS(on) in TO 247 • Ultra low gate charge P-TO247 • Periodic avalanche rated • Extreme dv/dt rated


    Original     		SPW47N60C3 P-TO247 Q67040-S4491 47N60C3 47n60c3 SPW47N60C3 47N60 SDP06S60 47N60C PDF

    47N60S5

    Abstract: 47N60 SPW47N60S5 spw47n60
    Text: SPW47N60S5 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Worldwide best RDS on in TO 247 VDS 600 V RDS(on) 0.07 Ω ID 47 A P-TO247 • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated


    Original     		SPW47N60S5 P-TO247 Q67040-S4240 47N60S5 47N60S5 47N60 SPW47N60S5 spw47n60 PDF

    47n60c3

    Abstract: 47n60 Q67040-S4491 47N60C 47n60c3 infineon
    Text: SPW47N60C3 Final data Cool MOS Power Transistor Feature VDS @ Tjmax 650 V RDS on 0.07 Ω ID 47 A • New revolutionary high voltage technology • Worldwide best RDS(on) in TO 247 P-TO247 • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated


    Original     		SPW47N60C3 P-TO247 Q67040-S4491 47N60C3 47n60c3 47n60 Q67040-S4491 47N60C 47n60c3 infineon PDF

    47n60c3

    Abstract: P-TO247 47N60C P-TO-247 SPW47N60C3 47n60c3 infineon 2449
    Text: SPW47N60C3 Target data sheet Cool MOS =Power Transistor COOLMOS Power Semiconductors Feature •=New revolutionary high voltage technology Product Summary • Worldwide best R DS on in TO 220 • Ultra low gate charge VDS @ Tjmax 650 V RDS(on) 0.07 Ω


    Original     		SPW47N60C3 P-TO247 47N60C3 47n60c3 P-TO247 47N60C P-TO-247 SPW47N60C3 47n60c3 infineon 2449 PDF

    47N60C2

    Abstract: SPW47N60C2 47N60C SDP06S60 W47A
    Text: Preliminary data SPW47N60C2 Cool MOS Power Transistor COOLMOS Power Semiconductors Feature • Product Summary New revolutionary high voltage technology · Worldwide best RDS on in TO 247 VDS 600 V 0.07 W 47 A · Ultra low gate charge R DS(on) · Periodic avalanche rated


    Original     		SPW47N60C2 P-TO247 Q67040-S4323 47N60C2 47N60C2 SPW47N60C2 47N60C SDP06S60 W47A PDF

    47n60cfd

    Abstract: SPW47N60CFD 47n60 JESD22 Q67045A5051
    Text: SPW47N60CFD CoolMOSTM Power Transistor Product Summary Features V DS • New revolutionary high voltage technology 600 0.083 Ω R DS on ,max • Intrinsic fast-recovery body diode V ID 46 A • Extremely low reverse recovery charge • Ultra low gate charge


    Original     		SPW47N60CFD PG-TO247 Q67045A5051 47N60CFD 009-134-A O-247 47n60cfd SPW47N60CFD 47n60 JESD22 Q67045A5051 PDF

    MGF4919G

    Abstract: SP*02N60 SPP11N80 to-220 smd MGF1601 SPW47N60 MGF0905A SPW11N80 SPP11N60 SPP20N60
    Text: МИКРОСХЕМЫ ТРАНЗИСТОРЫ 1 2 ВЫСОКОВОЛЬТНЫЕ ПОЛЕВЫЕ ТРАНЗИСТОРЫ CoolMOS CoolMOS полевые транзисторы Infineon – это новое поколение высоковольтных силовых транзисторов со сверхнизким сопротивлением в открытом состоянии


    Original     		SPP02N60 SPP03N60 SPP04N60 SPP07N60 SPP11N60 SPP20N60 SPW11N60 SPW20N60 SPW47N60 SPP02N80 MGF4919G SP*02N60 SPP11N80 to-220 smd MGF1601 SPW47N60 MGF0905A SPW11N80 SPP11N60 SPP20N60 PDF

    ZVT full bridge

    Abstract: SPP20N60 two transistor forward smd transistor infineon SPP07N60C2 Infineon CoolMOS SPP20N60S5 CoolMOS a boost dc to ac converter "380" SPP02N60S5
    Text: How to select the right CoolMOS type The selection of a right CoolMOS type for the particular design is a very complicated issue, that requires a multiple iteration approach. You can find detailed guidelines for this process in the Fehler! Verweisquelle konnte nicht gefunden werden.


    Original     		PDF

    AN-CoolMOS-01

    Abstract: AN-CoolMOS-04 SPW17N80C2 irfp450 mosfet full bridge transistor SMD v1 MOSFET siemens semiconductor 1988 led smps* ZVT 47n60s5 to247 SPN04N60C2 SPN01N60S5
    Text: Version 1.1 , June 2000 Application Note AN-CoolMOS-07 CoolMOS - Frequently Asked Questions Author: Ilia Zverev Published by Infineon Technologies AG http://www.infineon.com Power Conversion N e v e r s t o p t h i n k i n g CoolMOS - Frequently Asked Questions


    Original     		AN-CoolMOS-07 Room14J1 Room1101 AN-CoolMOS-01 AN-CoolMOS-04 SPW17N80C2 irfp450 mosfet full bridge transistor SMD v1 MOSFET siemens semiconductor 1988 led smps* ZVT 47n60s5 to247 SPN04N60C2 SPN01N60S5 PDF