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Infineon Technologies AG SPP11N60C3XKSA1 MOSFET N-CH 650V 11A TO220-3
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SPP11N60C3XKSA1	Tube	25		1	1 $3.61 10 $3.61 100 $3.61 1000 $1.25438 10000 $1.229	Buy Now
Avnet Americas	SPP11N60C3XKSA1	Tube		15 Weeks	500	1 - 10 - 100 - 1000 $1.23825 10000 $0.95827	Buy Now
Mouser Electronics	SPP11N60C3XKSA1		398			1 $3.53 10 $1.83 100 $1.66 1000 $1.22 10000 $1.22	Buy Now
Newark	SPP11N60C3XKSA1	Bulk	888		1	1 $3.59 10 $2.13 100 $1.95 1000 $1.5 10000 $1.5	Buy Now
Rochester Electronics	SPP11N60C3XKSA1		250		1	1 $1.3 10 $1.3 100 $1.22 1000 $1.11 10000 $1.11	Buy Now

TME	SPP11N60C3XKSA1		69		1	1 $2.99 10 $2.05 100 $1.75 1000 $1.45 10000 $1.45	Buy Now
EBV Elektronik	SPP11N60C3XKSA1			16 Weeks	500	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Win Source Electronics	SPP11N60C3XKSA1		12,500			1 - 10 - 100 $1.4991 1000 $1.2406 10000 $1.2406	Buy Now
Infineon Technologies AG SPP11N60S5HKSA1 MOSFET N-CH 650V 11A TO220-3
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SPP11N60S5HKSA1	Tube			500	1 - 10 - 100 - 1000 $1.41116 10000 $1.41116	Buy Now
Infineon Technologies AG SPP11N60S5XKSA1 LOW POWER_LEGACY
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SPP11N60S5XKSA1	Tube				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Infineon Technologies AG SPP11N60CFDXKSA1 MOSFET N-CH 650V 11A TO220-3
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SPP11N60CFDXKSA1	Tube			500	1 - 10 - 100 - 1000 $1.46164 10000 $1.46164	Buy Now
Mouser Electronics	SPP11N60CFDXKSA1					1 - 10 - 100 - 1000 - 10000 -	Get Quote
Rochester Electronics	SPP11N60CFDXKSA1		553		1	1 $1.3 10 $1.3 100 $1.22 1000 $1.11 10000 $1.11	Buy Now
EBV Elektronik	SPP11N60CFDXKSA1			16 Weeks	500	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Infineon Technologies AG SPP11N60CFDHKSA1 MOSFET N-CH 600V 11A TO220-3
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SPP11N60CFDHKSA1	Tube			500	1 - 10 - 100 - 1000 $1.46164 10000 $1.46164	Buy Now

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SPP11N60 Datasheets (15)

Part	Manufacturer	Description	Datasheet Type	PDF
SPP11N60C2	Infineon Technologies	Cool MOS Power Transistor	Original	PDF
SPP11N60C2	Infineon Technologies	CoolMOS Power MOSFET, 600V, TO-220, RDSon=0.38 ?, 11.0A	Original	PDF
SPP11N60C3	Infineon Technologies	Cool MOS Power Transistor	Original	PDF
SPP11N60C3	Infineon Technologies	N-Channel MOSFETs (>500V - 900V); Package: PG-TO220-3; V_DS (max): 600.0 V; Package: TO-220; R_DS(ON) @ T_J=25°C V_GS=10: 380.0 mOhm; I_D(max) @ T_C=25°C: 11.0 A; I_Dpuls (max): 33.0 A;	Original	PDF
SPP11N60C3	Infineon Technologies	CoolMOS Power MOSFET, 600V, TO-220, RDSon=0.38 ?, 11.0A	Original	PDF
SPP11N60C3	Infineon Technologies	Cool MOS Power Amp., 650V 11A 125W, MOS-FET N-Channel enhanced	Original	PDF
SPP11N60C3XKSA1	Infineon Technologies	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 650V 11A TO-220AB	Original	PDF
SPP11N60CFD	Infineon Technologies	Cool MOS Power Transistor	Original	PDF
SPP11N60CFDHKSA1	Infineon Technologies	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 600V 11A TO-220	Original	PDF
SPP11N60CFDXKSA1	Infineon Technologies	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 650V 11A TO-220	Original	PDF
SPP11N60S5	Infineon Technologies	Cool MOS Power Transistor	Original	PDF
SPP11N60S5	Infineon Technologies	CoolMOS Power MOSFET, 600V, TO-220, RDSon=0.38 ?, 11.0A	Original	PDF
SPP11N60S5	Infineon Technologies	Cool MOS Power Transistor	Original	PDF
SPP11N60S5HKSA1	Infineon Technologies	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 650V 11A TO-220AB	Original	PDF

SPP11N60S5XKSA1	Infineon Technologies	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - LOW POWER_LEGACY	Original	PDF

SPP11N60 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
11N60C3 Abstract: transistor 11n60c3 11N60C 11N60 Q67040-S4395 Q67040-S4396 SPA11N60C3 SPB11N60C3 SPI11N60C3 SPP11N60C3 Text: Preliminary data SPP11N60C3, SPB11N60C3 SPI11N60C3, SPA11N60C3 Cool MOS Power Transistor Feature • New revolutionary high voltage technology Product Summary VDS @ Tjmax 650 V • Ultra low gate charge RDS on 0.38 Ω 11 A • Periodic avalanche rated	Original	SPP11N60C3, SPB11N60C3 SPI11N60C3, SPA11N60C3 P-TO220-3-31 P-TO262-3-1 P-TO263-3-2 P-TO220-3-1 SPP11N60C3 11N60C3 transistor 11n60c3 11N60C 11N60 Q67040-S4395 Q67040-S4396 SPA11N60C3 SPB11N60C3 SPI11N60C3 SPP11N60C3	PDF
11N60S5 equivalent Abstract: 11N60S5 TRANSISTOR SMD MARKING CODE 7A SPB11N60S5 SPI11N60S5 SPP11N60S5 P-TO263-3-2 DSA003760 Text: SPP11N60S5, SPB11N60S5 SPI11N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge P-TO262 • Periodic avalanche rated VDS 600 V RDS on 0.38 Ω ID 11 A P-TO263-3-2 P-TO220-3-1 • Extreme dv/dt rated	Original	SPP11N60S5, SPB11N60S5 SPI11N60S5 P-TO262 P-TO263-3-2 P-TO220-3-1 SPP11N60S5 Q67040-S4198 11N60S5 equivalent 11N60S5 TRANSISTOR SMD MARKING CODE 7A SPB11N60S5 SPI11N60S5 SPP11N60S5 P-TO263-3-2 DSA003760	PDF
11n60c3 Abstract: transistor 11n60c3 SPA11N60C3E8185 SPI11N60C3 E8185 Text: SPP11N60C3 SPI11N60C3, SPA11N60C3, SPA11N60C3 E8185 Cool MOS Power Transistor VDS @ Tjmax 650 V RDS on 0.38 Ω ID 11 A Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated PG-TO220FP PG-TO262 PG-TO220	Original	SPP11N60C3 SPI11N60C3, SPA11N60C3, SPA11N60C3 E8185 P-TO220-3-31 PG-TO220FP PG-TO262 PG-TO220 PG-TO-220-3-31 11n60c3 transistor 11n60c3 SPA11N60C3E8185 SPI11N60C3	PDF
Untitled Abstract: No abstract text available Text: SPP11N60CFD Cool MOS Power Transistor VDS @ Tjmax 650 V RDS on 0.44 Ω ID 11 A Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated PG-TO220-3-1 • Extreme dv/dt rated • High peak current capability	Original	SPP11N60CFD PG-TO220-3-1 SPP11N60CFD 11N60CFD PG-TO220-3-1 Q67040-S4618	PDF
Untitled Abstract: No abstract text available Text: Preliminary data SPP11N60C3, SPB11N60C3 SPI11N60C3 Cool MOS =Power Transistor COOLMOS Power Semiconductors Feature New revolutionary high voltage technology Product Summary Worldwide best R DS on in TO 220 VDS @ Tjmax 650 V Ultra low gate charge	Original	SPP11N60C3, SPB11N60C3 SPI11N60C3 P-TO262-3-1 P-TO263-3-2 P-TO220-3-1 SPP11N60C3 P-TO220-3-1	PDF
11n60cfd Abstract: PG-TO-220-3-1 SPP11N60CFD Text: SPP11N60CFD Cool MOS Power Transistor VDS @ Tjmax 650 V RDS on 0.44 Ω ID 11 A Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated PG-TO220 • Extreme dv/dt rated • High peak current capability	Original	SPP11N60CFD PG-TO220 Q67040-S4618 11N60CFD 11n60cfd PG-TO-220-3-1 SPP11N60CFD	PDF
11n60c3 Abstract: 11N60C SPA11N60C3 equivalent SPA11N60C3E8185 11N60 E8185 SPP11N60C3 SPA11N60C3 SPD06S60 transistor 11n60c3 Text: SPP11N60C3 SPI11N60C3, SPA11N60C3, SPA11N60C3 E8185 Cool MOS Power Transistor VDS @ Tjmax 650 V RDS on 0.38 Ω ID 11 A Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated PG-TO220FP PG-TO262 PG-TO220	Original	SPP11N60C3 SPI11N60C3, SPA11N60C3, SPA11N60C3 E8185 PG-TO220FP PG-TO262 PG-TO220 P-TO220-3-31 PG-TO-220-3-31 11n60c3 11N60C SPA11N60C3 equivalent SPA11N60C3E8185 11N60 E8185 SPP11N60C3 SPD06S60 transistor 11n60c3	PDF
11N60S5 Abstract: 11N60S5 equivalent TRANSISTOR SMD MARKING CODE 7A SPB11N60S5 SPI11N60S5 SPP11N60S5 TRANSISTOR SMD 2X y Q67040-S4338 TRANSISTOR 11n60s5 Text: SPI11N60S5 SPP11N60S5, SPB11N60S5 Final data Cool MOS Power Transistor • New revolutionary high voltage technology • Ultra low gate charge Product Summary • Periodic avalanche rated VDS @ Tjmax 650 V • Extreme dv/dt rated RDS on 0.38 Ω • Optimized capacitances	Original	SPI11N60S5 SPP11N60S5, SPB11N60S5 P-TO262 P-TO263-3-2 P-TO220-3-1 Q67040-S4198 11N60S5 11N60S5 11N60S5 equivalent TRANSISTOR SMD MARKING CODE 7A SPB11N60S5 SPI11N60S5 SPP11N60S5 TRANSISTOR SMD 2X y Q67040-S4338 TRANSISTOR 11n60s5	PDF
11N60C Abstract: 11N60CFD 11N60 SPP11N60CFD Q67040-S4618 PG-TO-220-3-1 Text: SPP11N60CFD Cool MOS Power Transistor VDS @ Tjmax 650 V RDS on 0.44 Ω ID 11 A Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated PG-TO220 • Extreme dv/dt rated • High peak current capability	Original	SPP11N60CFD PG-TO220 Q67040-S4618 11N60CFD 11N60C 11N60CFD 11N60 SPP11N60CFD Q67040-S4618 PG-TO-220-3-1	PDF
11n60c3 Abstract: SPA11N60C3E8185 11N60C SPA11N60C3 equivalent SPA11N60C3 11N60 SPI11N60C3 transistor 11n60c3 Q67040-S4395 SPP11N60C3 Text: SPP11N60C3 SPI11N60C3, SPA11N60C3, SPA11N60C3 E8185 Cool MOS Power Transistor VDS @ Tjmax 650 V RDS on 0.38 Ω ID 11 A Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated PG-TO220FP PG-TO262 PG-TO220	Original	SPP11N60C3 SPI11N60C3, SPA11N60C3, SPA11N60C3 E8185 PG-TO220FP PG-TO262 PG-TO220 P-TO220-3-31 PG-TO-220-3-31 11n60c3 SPA11N60C3E8185 11N60C SPA11N60C3 equivalent 11N60 SPI11N60C3 transistor 11n60c3 Q67040-S4395 SPP11N60C3	PDF
11n60s Abstract: 11n60 SMD CASE footprint Text: SPP11N60S5 SPB11N60S5 Preliminary data D,2 Cool MOS Power Transistor • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche proved G,1 • Extreme dv/dt rated S,3 • Optimized capacitances COOLMOS • Improved noise immunity	Original	SPP11N60S5 SPB11N60S5 SPPx2N60S5/SPBx2N60S5 P-TO220-3-1 P-TO263-3-2 11N60S5 11N60S5 Q67040-S4198 11n60s 11n60 SMD CASE footprint	PDF
Untitled Abstract: No abstract text available Text: SPP11N60CFD Cool MOS Power Transistor VDS @ Tjmax 650 V RDS on 0.44 Ω ID 11 A Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated PG-TO220 • Extreme dv/dt rated • High peak current capability	Original	SPP11N60CFD PG-TO220 Q67040-S4618 11N60CFD	PDF
Untitled Abstract: No abstract text available Text: Preliminary data SPP11N60C3, SPB11N60C3 SPI11N60C3, SPA11N60C3 Cool MOS =Power Transistor Feature •=New revolutionary high voltage technology Product Summary VDS @ Tjmax 650 V • Ultra low gate charge R DS on 0.38 Ω •=Periodic avalanche rated ID	Original	SPP11N60C3, SPB11N60C3 SPI11N60C3, SPA11N60C3 P-TO220-3-31 P-TO262-3-1 P-TO263-3-2 P-TO220-3-1 SPP11N60C3	PDF
11n60c2 Abstract: transistor 11n60c2 spa 11n60c2 Text: Final data SPP11N60C2, SPB11N60C2 SPA11N60C2 Cool MOS Power Transistor Feature • New revolutionary high voltage technology Product Summary VDS @ Tjmax 650 V • Ultra low gate charge RDS on 0.38 Ω 11 A • Periodic avalanche rated ID • Extreme dv/dt rated	Original	SPP11N60C2, SPB11N60C2 SPA11N60C2 P-TO220-3-31 P-TO263-3-2 P-TO220-3-1 SPP11N60C2 11n60c2 transistor 11n60c2 spa 11n60c2	PDF

Untitled Abstract: No abstract text available Text: SPP11N60S5, SPB11N60S5 SPI11N60S5 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated P-TO262 VDS 600 V RDS on 0.38 Ω ID 11 A P-TO263-3-2 P-TO220-3-1 • Extreme dv/dt rated	Original	SPP11N60S5, SPB11N60S5 SPI11N60S5 P-TO262 P-TO263-3-2 P-TO220-3-1 SPP11N60S5 P-TO220-3-1	PDF
11N60C3 Abstract: transistor 11n60c3 Text: Preliminary data SPP11N60C3, SPB11N60C3 SPI11N60C3, SPA11N60C3 Cool MOS Power Transistor Feature • New revolutionary high voltage technology Product Summary VDS @ Tjmax 650 V • Ultra low gate charge RDS on 0.38 Ω 11 A • Periodic avalanche rated	Original	SPP11N60C3, SPB11N60C3 SPI11N60C3, SPA11N60C3 P-TO220-3-31 P-TO220-3-31 P-TO262-3-1 P-TO263-3-2 P-TO220-3-1 SPP11N60C3 11N60C3 transistor 11n60c3	PDF
SP000216312 Abstract: 11N6 Text: SPP11N60C3 SPI11N60C3, SPA11N60C3 Cool MOS Power Transistor VDS @ Tjmax 650 V RDS on 0.38 Ω ID 11 A Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated PG-TO220-3-31 PG-TO262-3 PG-TO220 • Extreme dv/dt rated	Original	SPP11N60C3 SPI11N60C3, SPA11N60C3 P-TO220-3-31 PG-TO220-3-31 PG-TO262-3 PG-TO220 PG-TO-220-3-31: SPI11N60C3 SP000216312 11N6	PDF
transistor 11n60c3 Abstract: SPP11N60C3 Q67040-S4408 11N60C3 11N60C Text: SPP11N60C3 SPI11N60C3, SPA11N60C3 Cool MOS Power Transistor Feature VDS @ Tjmax 650 V RDS on 0.38 Ω ID 11 A • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated PG-TO220-3-31 PG-TO262-3-1 PG-TO220-3-1 • Extreme dv/dt rated	Original	SPP11N60C3 SPI11N60C3, SPA11N60C3 P-TO220-3-31 PG-TO220-3-31 PG-TO262-3-1 PG-TO220-3-1 PG-TO-220-3-31: SPI11N60C3 transistor 11n60c3 Q67040-S4408 11N60C3 11N60C	PDF
11N60S5 Abstract: SPI11N60S5 SPP11N60S5 Text: SPP11N60S5 SPI11N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 0.38 Ω ID 11 A PG-TO262 • Periodic avalanche rated PG-TO220 • Extreme dv/dt rated 2 • Ultra low effective capacitances	Original	SPP11N60S5 SPI11N60S5 PG-TO262 PG-TO220 P-TO220-3-1 Q67040-S4198 11N60S5 11N60S5 SPI11N60S5 SPP11N60S5	PDF
11N60S5 equivalent Abstract: 11N60s5 1713 11N60 SMD MARKING CODE 10 TRANSISTOR SMD MARKING CODE 7A SPB11N60S5 SPI11N60S5 SPP11N60S5 F11A 095 Text: SPI11N60S5 Preliminary data SPP11N60S5, SPB11N60S5 Cool MOS Power-Transistor • New revolutionary high voltage technology · Ultra low gate charge · Periodic avalanche rated · Extreme dv/dt rated · Optimized capacitances · Improved noise immunity ·	Original	SPI11N60S5 SPP11N60S5, SPB11N60S5 SPPx2N60S5/SPBx2N60S5 P-TO220-3-1 11N60S5 Q67040-S4198 P-TO263-3-2 11N60S5 equivalent 11N60s5 1713 11N60 SMD MARKING CODE 10 TRANSISTOR SMD MARKING CODE 7A SPB11N60S5 SPI11N60S5 SPP11N60S5 F11A 095	PDF
11N60C3 Abstract: 11N60C 11N60 SPP11N60C3 Q67042-S4403 TRANSISTOR SMD MARKING CODE 7A Q67040-S4395 Q67040-S4396 SPB11N60C3 SPI11N60C3 Text: Preliminary data SPP11N60C3, SPB11N60C3 SPI11N60C3 Cool MOS =Power Transistor COOLMOS Power Semiconductors Feature •=New revolutionary high voltage technology Product Summary • Worldwide best R DS on in TO 220 • Ultra low gate charge VDS @ Tjmax	Original	SPP11N60C3, SPB11N60C3 SPI11N60C3 P-TO262-3-1 P-TO263-3-2 P-TO220-3-1 SPP11N60C3 Q67040-S4395 11N60C3 11N60C3 11N60C 11N60 SPP11N60C3 Q67042-S4403 TRANSISTOR SMD MARKING CODE 7A Q67040-S4395 Q67040-S4396 SPB11N60C3 SPI11N60C3	PDF
68w Transistor smd Abstract: 11n60c2 transistor smd 68W marking code 68W 68w smd smd 68W transistor 68W SPP11N60C2 transistor 68W smd 11n60c2 equivalent Text: SPP11N60C2 SPB11N60C2 Preliminary data Cool MOS Power Transistor COOLMOS Power Semiconductors Feature Product Summary • New revolutionary high voltage technology · Ultra low gate charge VDS 600 V · Periodic avalanche rated RDS on 0.38 W · Extreme dv/dt rated	Original	SPP11N60C2 SPB11N60C2 P-TO263-3-2 P-TO220-3-1 Q67040-S4295 11N60C2 Q67040-S4298 68w Transistor smd 11n60c2 transistor smd 68W marking code 68W 68w smd smd 68W transistor 68W SPP11N60C2 transistor 68W smd 11n60c2 equivalent	PDF
TRANSISTOR SMD MARKING CODE 7A Abstract: 11N60S5 20TP SPI11N60S5 SPP11N60S5 AR06 Text: SPP11N60S5 SPI11N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 0.38 Ω ID 11 A PG-TO262 • Periodic avalanche rated PG-TO220 • Extreme dv/dt rated 2 • Ultra low effective capacitances	Original	SPP11N60S5 SPI11N60S5 PG-TO262 PG-TO220 P-TO220-3-1 Q67040-S4198 11N60S5 TRANSISTOR SMD MARKING CODE 7A 11N60S5 20TP SPI11N60S5 SPP11N60S5 AR06	PDF
11n60c3 Abstract: transistor 11n60c3 11N60C SPB11N60C3 SPP11N60C3 Q67040-S4395 SPA11N60C3 SPI11N60C3 11N60 Text: SPP11N60C3, SPB11N60C3 SPI11N60C3, SPA11N60C3 Final data Cool MOS Power Transistor Feature VDS @ Tjmax 650 V RDS on 0.38 Ω ID 11 A • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated P-TO220-3-31 P-TO262-3-1	Original	SPP11N60C3, SPB11N60C3 SPI11N60C3, SPA11N60C3 P-TO220-3-31 P-TO262-3-1 P-TO263-3-2 P-TO220-3-1 P-TO-220-3-31: 11n60c3 transistor 11n60c3 11N60C SPB11N60C3 SPP11N60C3 Q67040-S4395 SPA11N60C3 SPI11N60C3 11N60	PDF

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SPP11N60 Search Results

SPP11N60 Price and Stock

Infineon Technologies AG SPP11N60C3XKSA1

Infineon Technologies AG SPP11N60S5HKSA1

Infineon Technologies AG SPP11N60S5XKSA1

Infineon Technologies AG SPP11N60CFDXKSA1

Infineon Technologies AG SPP11N60CFDHKSA1

SPP11N60 Datasheets (15)

SPP11N60 Datasheets Context Search

11N60C3

11N60S5 equivalent

11n60c3

Untitled

Untitled

11n60cfd

11n60c3

11N60S5

11N60C

11n60c3

11n60s

Untitled

Untitled

11n60c2

Untitled

11N60C3

SP000216312

transistor 11n60c3

11N60S5

11N60S5 equivalent

11N60C3

68w Transistor smd

TRANSISTOR SMD MARKING CODE 7A

11n60c3