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    11N60S Search Results

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    11N60S Price and Stock

    Rochester Electronics LLC SPI11N60S5

    N-CHANNEL POWER MOSFET
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    DigiKey SPI11N60S5 Bulk 260
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    Rochester Electronics LLC SPW11N60S5

    N-CHANNEL POWER MOSFET
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    DigiKey SPW11N60S5 Bulk 160
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    Infineon Technologies AG SPP11N60S5HKSA1

    MOSFET N-CH 650V 11A TO220-3
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    DigiKey SPP11N60S5HKSA1 Tube 500
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    Infineon Technologies AG SPW11N60S5FKSA1

    MOSFET N-CH 600V 11A TO247-3
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    DigiKey SPW11N60S5FKSA1 Tube 240
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    Infineon Technologies AG SPB11N60S5ATMA1

    MOSFET N-CH 600V 11A TO263-3
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    DigiKey SPB11N60S5ATMA1 Reel 1,000
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    SPB11N60S5ATMA1 Cut Tape 1
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    SPB11N60S5ATMA1 Digi-Reel 1
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    Find more 11N60S price and stock on Findchips.com

    11N60S Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    11N60S5 Infineon Technologies Cool MOS Power Transistor Original PDF

    11N60S Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    11N60S5

    Abstract: SPI11N60S5
    Text: 11N60S5 D,2 Cool MOS Power-Transistor • New revolutionary high voltage technology · Ultra low gate charge · Periodic avalanche rated · Extreme dv/dt rated · Optimized capacitances · Improved noise immunity · Former development designation: G,1


    Original     		SPI11N60S5 SPPx2N60S5 P-TO262 11N60S5 Q67040-S4250 11N60S5 SPI11N60S5 PDF

    11N60S5 equivalent

    Abstract: 11N60S5 TRANSISTOR SMD MARKING CODE 7A SPB11N60S5 SPI11N60S5 SPP11N60S5 P-TO263-3-2 DSA003760
    Text: 11N60S5, 11N60S5 11N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge P-TO262 • Periodic avalanche rated VDS 600 V RDS on 0.38 Ω ID 11 A P-TO263-3-2 P-TO220-3-1 • Extreme dv/dt rated


    Original     		SPP11N60S5, SPB11N60S5 SPI11N60S5 P-TO262 P-TO263-3-2 P-TO220-3-1 SPP11N60S5 Q67040-S4198 11N60S5 equivalent 11N60S5 TRANSISTOR SMD MARKING CODE 7A SPB11N60S5 SPI11N60S5 SPP11N60S5 P-TO263-3-2 DSA003760 PDF

    SPW11N60S5

    Abstract: 06161L 11N60S5 equivalent 11N60S5
    Text: 11N60S5 Preliminary data Cool MOS =Power Transistor COOLMOS Power Semiconductors •=New revolutionary high voltage technology • Ultra low gate charge Product Summary •=Periodic avalanche rated VDS @ Tjmax 650 V • Extreme dv/dt rated RDS on 0.38


    Original     		SPW11N60S5 P-TO247 SPWx2N60S5 Q67040-S4239 11N60S5 SPW11N60S5 06161L 11N60S5 equivalent 11N60S5 PDF

    11N60S5

    Abstract: SPW11N60S5
    Text: 11N60S5 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 0.38 Ω ID 11 A P-TO247 • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances


    Original     		SPW11N60S5 P-TO247 Q67040-S4239 11N60S5 11N60S5 SPW11N60S5 PDF

    AR1010

    Abstract: No abstract text available
    Text: 11N60S5 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 0.38 Ω ID 11 A • Periodic avalanche rated P-TO247 • Extreme dv/dt rated • Ultra low effective capacitances


    Original     		SPW11N60S5 P-TO247 Q67040-S4239 11N60S5 AR1010 PDF

    Untitled

    Abstract: No abstract text available
    Text: 11N60S5 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 0.38 Ω ID 11 A P-TO247 • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances


    Original     		SPW11N60S5 P-TO247 Q67040-S4239 11N60S5 PDF

    11N60S5 equivalent

    Abstract: 11N60S5 SPW11N60S5
    Text: 11N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 0.38 Ω ID 11 A PG-TO247 • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance


    Original     		SPW11N60S5 PG-TO247 Q67040-S4239 11N60S5 11N60S5 equivalent 11N60S5 SPW11N60S5 PDF

    11N60S5

    Abstract: 11N60S5 equivalent TRANSISTOR SMD MARKING CODE 7A SPB11N60S5 SPI11N60S5 SPP11N60S5 TRANSISTOR SMD 2X y Q67040-S4338 TRANSISTOR 11n60s5
    Text: 11N60S5 11N60S5, 11N60S5 Final data Cool MOS Power Transistor • New revolutionary high voltage technology • Ultra low gate charge Product Summary • Periodic avalanche rated VDS @ Tjmax 650 V • Extreme dv/dt rated RDS on 0.38 Ω • Optimized capacitances


    Original     		SPI11N60S5 SPP11N60S5, SPB11N60S5 P-TO262 P-TO263-3-2 P-TO220-3-1 Q67040-S4198 11N60S5 11N60S5 11N60S5 equivalent TRANSISTOR SMD MARKING CODE 7A SPB11N60S5 SPI11N60S5 SPP11N60S5 TRANSISTOR SMD 2X y Q67040-S4338 TRANSISTOR 11n60s5 PDF

    11n60s

    Abstract: 11n60 SMD CASE footprint
    Text: 11N60S5 11N60S5 Preliminary data D,2 Cool MOS Power Transistor • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche proved G,1 • Extreme dv/dt rated S,3 • Optimized capacitances COOLMOS • Improved noise immunity


    Original     		SPP11N60S5 SPB11N60S5 SPPx2N60S5/SPBx2N60S5 P-TO220-3-1 P-TO263-3-2 11N60S5 11N60S5 Q67040-S4198 11n60s 11n60 SMD CASE footprint PDF

    IXAN0040

    Abstract: 48V SMPS SiC POWER MOSFET PFC smps design 11N60S5 DGSS10-06CC D-86161 SIC DIODES
    Text: COVER STORY IXAN0040 GaAs and SiC devices will find more and more use The IGBT3 technology which combines the trench cell and the field stop concept is successfully GaAs power devices were mainly used up to 300V, while 600V applications like PFC were regarded to be perfectly served by SiC devices. A new generation of 600V GaAs power


    Original     		IXAN0040 D-10997 IXAN0040 48V SMPS SiC POWER MOSFET PFC smps design 11N60S5 DGSS10-06CC D-86161 SIC DIODES PDF

    Untitled

    Abstract: No abstract text available
    Text: 11N60S5 Final data Cool MOS Power Transistor • New revolutionary high voltage technology • Ultra low gate charge Product Summary • Periodic avalanche rated VDS @ Tjmax 650 V • Extreme dv/dt rated RDS on 0.38 Ω • Optimized capacitances ID


    Original     		SPW11N60S5 P-TO247 Q67040-S4239 11N60S5 PDF

    Untitled

    Abstract: No abstract text available
    Text: 11N60S5, 11N60S5 11N60S5 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated P-TO262 VDS 600 V RDS on 0.38 Ω ID 11 A P-TO263-3-2 P-TO220-3-1 • Extreme dv/dt rated


    Original     		SPP11N60S5, SPB11N60S5 SPI11N60S5 P-TO262 P-TO263-3-2 P-TO220-3-1 SPP11N60S5 P-TO220-3-1 PDF

    Untitled

    Abstract: No abstract text available
    Text: 11N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 0.38 Ω ID 11 A P-TO263-3-2 • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances


    Original     		SPB11N60S5 P-TO263-3-2 SPB11N60S5 Q67040-S4199 11N60S5 PDF

    11N60

    Abstract: 11N60S5 SPW11N60S5 Q67040-S4239 11n6 marking code 68W 70
    Text: 11N60S5 D,2 Cool MOS Power-Transistor • New revolutionary high voltage technology · Ultra low gate charge · Periodic avalanche rated · Extreme dv/dt rated · Optimized capacitances · Improved noise immunity · Former development designation: G,1


    Original     		SPW11N60S5 SPWx2N60S5 SPW11N60S5 P-TO247 11N60S5 Q67040-S4239 11N60 11N60S5 Q67040-S4239 11n6 marking code 68W 70 PDF

    11N60S5 equivalent

    Abstract: 11N60s5 1713 11N60 SMD MARKING CODE 10 TRANSISTOR SMD MARKING CODE 7A SPB11N60S5 SPI11N60S5 SPP11N60S5 F11A 095
    Text: 11N60S5 Preliminary data 11N60S5, 11N60S5 Cool MOS Power-Transistor • New revolutionary high voltage technology · Ultra low gate charge · Periodic avalanche rated · Extreme dv/dt rated · Optimized capacitances · Improved noise immunity ·


    Original     		SPI11N60S5 SPP11N60S5, SPB11N60S5 SPPx2N60S5/SPBx2N60S5 P-TO220-3-1 11N60S5 Q67040-S4198 P-TO263-3-2 11N60S5 equivalent 11N60s5 1713 11N60 SMD MARKING CODE 10 TRANSISTOR SMD MARKING CODE 7A SPB11N60S5 SPI11N60S5 SPP11N60S5 F11A 095 PDF

    TRANSISTOR SMD MARKING CODE 7A

    Abstract: 11N60S5 20TP SPI11N60S5 SPP11N60S5 AR06
    Text: 11N60S5 11N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 0.38 Ω ID 11 A PG-TO262 • Periodic avalanche rated PG-TO220 • Extreme dv/dt rated 2 • Ultra low effective capacitances


    Original     		SPP11N60S5 SPI11N60S5 PG-TO262 PG-TO220 P-TO220-3-1 Q67040-S4198 11N60S5 TRANSISTOR SMD MARKING CODE 7A 11N60S5 20TP SPI11N60S5 SPP11N60S5 AR06 PDF

    siemens 350 98

    Abstract: 11N60S5 SPW11N60S5
    Text: 11N60S5 Preliminary data D,2 Cool MOS Power Transistor • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche proved G,1 • Extreme dv/dt rated 1 S,3 2 3 • Optimized capacitances COOLMOS • Improved noise immunity


    Original     		SPW11N60S5 SPWx2N60S5 SPW11N60S5 P-TO247 11N60S5 Q67040-S4239 siemens 350 98 11N60S5 PDF

    Untitled

    Abstract: No abstract text available
    Text: 11N60S5 11N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology VDS 600 V RDS on 0.38 Ω ID 11 A • Ultra low gate charge PG-TO262 • Periodic avalanche rated PG-TO220 2 • Extreme dv/dt rated • Ultra low effective capacitances


    Original     		SPP11N60S5 SPI11N60S5 PG-TO262 PG-TO220 P-TO220-3-1 Q67040-S4198 11N60S5 PDF

    TRANSISTOR SMD MARKING CODE 7A

    Abstract: 11N60S5 PG-TO263-3-2 SPB11N60S5 SPP11N60S5
    Text: 11N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 0.38 Ω ID 11 A PG-TO263 • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance


    Original     		SPB11N60S5 PG-TO263 Q67040-S4199 11N60S5 TRANSISTOR SMD MARKING CODE 7A 11N60S5 PG-TO263-3-2 SPB11N60S5 SPP11N60S5 PDF

    CTX16-16926

    Abstract: FA2443-ALC CTX16-17298 TL1431QDBZ ctx16 SLUU256A FA2443-AL HPA126 panasonic TV flyback transformer Phoenix Passive Components
    Text: UCC28600 120-W Evaluation Module User's Guide October 2006 Power Supply MAN SLUU256A UCC28600 120-W Evaluation Module User's Guide Literature Number: SLUU256A August 2006 – Revised October 2006 User's Guide SLUU256A – August 2006 – Revised October 2006


    Original     		UCC28600 SLUU256A UCC28051 EIC61000-3-2 CTX16-16926 FA2443-ALC CTX16-17298 TL1431QDBZ ctx16 SLUU256A FA2443-AL HPA126 panasonic TV flyback transformer Phoenix Passive Components PDF

    11n60s5

    Abstract: No abstract text available
    Text: 11N60S5 11N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 0.38 Ω ID 11 A PG-TO262-3 • Periodic avalanche rated PG-TO220-3-1 • Extreme dv/dt rated 2 • Ultra low effective capacitances


    Original     		SPP11N60S5 SPI11N60S5 P-TO220-3-1 PG-TO262-3 PG-TO220-3-1 SPI11N60S5 PG-TO220-3-1 Q67040-S4198 PG-TO262-3 11n60s5 PDF

    Untitled

    Abstract: No abstract text available
    Text: 11N60S5 11N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 0.38 Ω ID 11 A PG-TO262 • Periodic avalanche rated PG-TO220-3-1 • Extreme dv/dt rated 2 • Ultra low effective capacitances


    Original     		SPP11N60S5 SPI11N60S5 P-TO220-3-1 PG-TO262 PG-TO220-3-1 SPI11N60S5 PG-TO220-3-1 Q67040-S4198 PG-TO262 PDF

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS 11N60S5 Preliminary data Cool MOS Power Transistor • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche proved • Extreme dv/df rated • Optimized capacitances • Improved noise immunity • Former development designation:


    OCR Scan     		SPW11N60S5 SPWx2N60S5 11N60S5 P-T0247 11N60S5 Q67040-S4239 PDF

    Untitled

    Abstract: No abstract text available
    Text: 11N60SA OM11N55SA POWER MOSFET IN HERMETIC ISOLATED TO-254AA PACKAGE 600V & 550V, 11 Amp, N-Channel MOSFET In Hermetic Metal Package FEATURES • • • • • Isolated Hermetic Metal Package Fast Switching Low RDS 0n Available Screened To MIL-S-19500, TX, TXV And S


    OCR Scan     		OM11N60SA OM11N55SA O-254AA MIL-S-19500, M11N60SA M11N55SA O-254 PDF