GP 809 DIODE
Abstract: GP 839 DIODE RD01MUS2B 4406 mosfet diode zener 7.2v RD01MUS2B-101 gp 520 diode diode gp 805 mosfet vhf power amplifier GP 007 DIODE
Text: < Silicon RF Power MOS FET Discrete > RD01MUS2B RoHS Compliance, Silicon MOSFET Power Transistor 527MHz,1W OUTLINE DRAWING DESCRIPTION RD01MUS2B is a MOS FET type transistor specifically 4.4+/-0.1 TYPE NAME LOT No. 0.8 MIN 2.5+/-0.1 This device has an internal monolithic zener diode from
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RD01MUS2B
527MHz
RD01MUS2B
15dBTyp,
527MHz
Nov2011
GP 809 DIODE
GP 839 DIODE
4406 mosfet
diode zener 7.2v
RD01MUS2B-101
gp 520 diode
diode gp 805
mosfet vhf power amplifier
GP 007 DIODE
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Untitled
Abstract: No abstract text available
Text: < Silicon RF Power MOS FET Discrete > RD02LUS2 RoHS Compliance, Silicon MOSFET Power Transistor 470MHz,2W OUTLINE DRAWING DESCRIPTION RD02LUS2 is a MOS FET type transistor specifically 4.4 +/-0.1 designed for VHF/UHF RF amplifiers applications. T YPE N AM E
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RD02LUS2
470MHz
RD02LUS2
15dBTyp
470MHz
18dBTyp
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GP 809 DIODE
Abstract: GP 007 DIODE
Text: < Silicon RF Power MOS FET Discrete > RD01MUS2B RoHS Compliance, Silicon MOSFET Power Transistor 527MHz,1W OUTLINE DRAWING DESCRIPTION RD01MUS2B is a MOS FET type transistor specifically 4.4+/-0.1 TYPE NAME LOT No. 0.8 MIN 2.5+/-0.1 This device has an internal monolithic zener diode from
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RD01MUS2B
527MHz
RD01MUS2B
15dBTyp,
527MHz
GP 809 DIODE
GP 007 DIODE
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SLM-090A1
Abstract: No abstract text available
Text: ÛTM ^O ITÄL 350 1500 MHz Band Chip Multilayer D.B.MIXER Model No. SLM-090A1 Equivalent Circuits ixers Shape & Size Specifications Lo Level Frequency Isolation +7dBm Typ. RF:350-500MHz L0:400-550MHZ IF :DC-150MHz LO-RF:20dB Min. 30dBTyp. LO-IF:10dB Min. (15dBTyp.)
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SLM-090A1
350-500MHz
400-550MHZ
DC-150MHz
30dBTyp.
15dBTyp.
15dBm
SLM-090A1
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Untitled
Abstract: No abstract text available
Text: ìk 'é à H M C 152 M ICRO W AVE CO R PO R A TIO N PHASE COMPENSATED VARIABLE GAIN AMPLIFIER 2.5 - 5.0 GHz FEBRUARY 1998 Features General Description GAIN: 15dBtyp. The HM C152 is an amplifier with gain con trolled with a 5 bit binary word. The magni
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15dBtyp.
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0-32U
Abstract: LA06
Text: ìk 'é à H M C 1 5 2 M ICRO W AVE CO R PO R A TIO N PHASE COMPENSATED VARIABLE GAIN AMPLIFIER 2.5 - 5.0 GHz FEBRUARY 1998 Features General Description GAIN: 15dBtyp. The HMC152 is an amplifier with gain con trolled with a 5 bit binary word. The magni
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HMC152
TDG4125
0-32U
LA06
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SLM-090A1
Abstract: SLM-090A
Text: HITACHI “ METALS 800 / 900 MHz Band Chip Multilayer D.B.MIXER Model No. SLM-090A1 Equivalent Circuits Shape & Size Specifications Lo Level +7dBm Typ. Conversion Loss Frequency RF:700-1000MHz L0:700-1100MHZ IF :DC - 400MHz Impedance Isolation LO-RF:18dB Min. 30dB Typ.
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SLM-090A1
700-1000MHz
700-1100MHZ
400MHz
15dBTyp.
15dBmTyp.
-10dBm
45MHz
LM-SLM-090A1-9804A
SLM-090A1
SLM-090A
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NE32184A
Abstract: Ku-BAND NEZ1011-4A nec x-band ne32684a hz nec NE42184A NE20248 NE24200 NE32084
Text: - 158 - & f m € m tí: £ & m it V* Ì V K V s X Vg s * X I* £ * (V) * (A) >< P d /P ch * (HO Ig s s (max) (A) Vg s (V) & % Id s (min) (max) V ds (A) (A) (V) (min) (max) V d s (V) (V) (V) NE345L-10B NEC L~-S-Band PA GaAs N D 15 DS -7 0 9 D 50 4 NE345L-20B
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NE345L-10B
NE345L-20B
NE20248
NE24200
NE24283A
NE32084
4/12GBz
NE76038
4/12GHz
NE76184A
NE32184A
Ku-BAND
NEZ1011-4A
nec x-band
ne32684a
hz nec
NE42184A
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3SK129
Abstract: 3SK132 3SK141 3SK137 3SK131 3SK143 3SK136 SDG201 3SK133 3SK128
Text: - 178 - f §¡J £ it € m & m Ä 1 V* + h K V m* I* & * (V) P d/ P c h (A) ft t t S 4* $ 7> * m Ig s s (max) (A) Vg s (V) 3SK127 UHF RF/M1X MOS N DE 15 DS ±8 0 30m D 150m ±50n ±6 3SK12S UHF LN A MOS N DE 15 DS ±8 30m D 200m ±20n ±8 (Ta=25‘
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3SK127
3SK128
3SK129
3SK131
3SK132
13dBmin/15dBtyp
800MHz
3SK143
23dBtyp
50/200MHz
3SK141
3SK137
3SK143
3SK136
SDG201
3SK133
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IM10
Abstract: No abstract text available
Text: 800 / 900 MHz Band Chip Multilayer D.B.MIXER ' Model No. SLM-090A1 Shape & Size Equivalent Circuits Specifications Lo Level +7dBm Typ. Conversion Loss RF:700-1000MHz LO :700-1100MHz
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SLM-090A1
700-1000MHz
700-1100MHz
400MHz
30dBTyp.
15dBTyp.
15dBmTyp.
-10dBm
45MHz
IM10
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2SK131
Abstract: 2SK130A 2SJ72 2SK146 2SK130 2SJ49 2sk134 2SK151 2SK150 2SK160 2SK150 A
Text: - 34 - f m ít % m £ m A i fr K V Eft * fê Ê * 1 ft * (V) (A) % S ft* P d/ P c h (W) Ig s s (max) (A) Vg s (V) W (min) (max) V d s (A) (A) (V) 4# tt (Ta=25eC ) Id (min) (max) V d s (V) (V) (V) (A) (min) (typ) V d s (S) (S) (V) 2SK128 föT LF LN A }
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2SK130
2SK130A
2SK131
25/CH
2SK132
20mVniax
VDS-10V.
2SJ73
2SK146
10dBmax
2SJ72
2SK146
2SJ49 2sk134
2SK151
2SK150
2SK160
2SK150 A
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2SK308 2Sk310 2SK311 2SK312
Abstract: 2SK318 2SK325 2SK293A 2SK295 2SK300 LM 1011 2SK293 2SK294 2SK314
Text: - 42 - m % tt £ ffl m £ m t £ ft f 1 K V* V) Vg s * * (V) X ñ * të I* (A) >\ « X ñ * P d /P c h (W) Ig s s (max) (A) W s Vg s (V) (min) (max) Vd s (V) (V) (V) U ? ] (max) Vd s (A) (A) (13=25*0) 14 ft (V) , gm (min) (S) Id (A) Id (A) Vd s (V) 2SK293
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2SK293
2SK293A
2SK294
2SK295
2SK296
2SK312
2SK313
2SK314
23dBtyp
100MHz
2SK308 2Sk310 2SK311 2SK312
2SK318
2SK325
2SK300
LM 1011
2SK314
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