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    Untitled

    Abstract: No abstract text available
    Text: BCP56 NPN Silicon Planar Epitaxial Transistor P b Lead Pb -Free COLLECTOR 2, 4 1. BASE 2.COLLECTOR 3.EMITTER 4.COLLECTOR BASE 1 4 1 2 3 SOT-223 3 EMITTER ABSOLUTE MAXIMUM RATINGS (TA=25˚C) Symbol VCEO VCBO VEBO Rating Collector-Emitter Voltage Collector-Base Voltage


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    PDF BCP56 OT-223 BCP56 100ms 15-Jul-05 OT-223

    Untitled

    Abstract: No abstract text available
    Text: BAV74 Surface Mount Switching Diode * “G” Lead Pb -Free SWITCHING DIODE 200m AMPERES Features: *Low Current Leakage *Low Forward Voltage *Reverse Recover Time Trr ≤ 4ns *Small Outline Surface Mount SOT-23 Package 50 VOLTS 3 1 2 SOT-23 SOT-23 Outline Dimensions


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    PDF BAV74 OT-23 OT-23 15-Jul-05

    diode fr 210

    Abstract: BAV74
    Text: BAV74 Surface Mount Switching Diode SWITCHING DIODE P b Lead Pb -Free 200m AMPERES 50 VOLTS Features: *Low Current Leakage *Low Forward Voltage *Reverse Recover Time Trr ≤ 4ns *Small Outline Surface Mount SOT-23 Package 3 1 2 SOT-23 SOT-23 Outline Dimensions


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    PDF BAV74 OT-23 OT-23 15-Jul-05 diode fr 210 BAV74

    "BAT17"

    Abstract: BAT17 BAT17W BAT17W-GS08 BAT17W-GS18 BAT17WS marking code SOD
    Text: BAT17W Vishay Semiconductors Small Signal Schottky Diode Features • Low turn-on voltage Low capacitance • Ultrafast switching e3 • Ideal for single or double, UHF balanced mixer, modulators and phase detectors. • These diodes are also available in case styles


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    PDF BAT17W OT-23 BAT17, OD-323 BAT17WS 2002/95/EC 2002/96/EC OD-123 BAT17W-GS18 "BAT17" BAT17 BAT17W BAT17W-GS08 BAT17WS marking code SOD

    SOD123 4001

    Abstract: No abstract text available
    Text: SD101AW / 101BW / 101CW Vishay Semiconductors Small Signal Schottky Diodes Features • For general purpose applications • The low forward voltage drop and fast switching make it ideal for protection of e3 MOS devices, steering, biasing and coupling diodes for fast switching and low logic level


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    PDF SD101AW 101BW 101CW SD101 LL101A LL101C, DO-35 SD101A SD101C OD-323 SOD123 4001

    101BW

    Abstract: SD101AWS-GS08
    Text: SD101AWS / 101BWS / 101CWS Vishay Semiconductors Small Signal Schottky Diodes Features • For general purpose applications • The SD101 series is a Metal-on-silicon e3 Schottky barrier device which is protected by a PN junction guard ring. • The low forward voltage drop and fast switching


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    PDF SD101AWS 101BWS 101CWS SD101 LL101A LL101C, DO-35 SD101A SD101C OD-323 101BW SD101AWS-GS08

    arm9 block diagram

    Abstract: No abstract text available
    Text: Features • AMBA Advanced High-performance Bus AHB Lite Compliant Master • Performs Transfers to/from APB Communication Serial Peripherals • Supports Full-duplex and Half-duplex Peripherals 1. Description The AHB Peripheral DMA Controller (PDC) transfers data between on-chip serial


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    PDF 6031AS 15-Jul-05 arm9 block diagram

    md 5008 application notes

    Abstract: No abstract text available
    Text: CAT3604 4-Channel Regulated Charge Pump White LED Driver FEATURES „ „ „ „ „ „ „ „ „ „ „ „ DESCRIPTION Drives individually up to 4 LEDs Output current up to 30mA per LED Digital control On/Off of each LED Compatible with supply voltage of 3V to 5.5V


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    PDF CAT3604 16-pad CAT3604 MD-5008 md 5008 application notes

    Untitled

    Abstract: No abstract text available
    Text: BAT17W Vishay Semiconductors Small Signal Schottky Diode Features • Low turn-on voltage Low capacitance • Ultrafast switching e3 • Ideal for single or double, UHF balanced mixer, modulators and phase detectors. • These diodes are also available in case styles


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    PDF BAT17W OT-23 BAT17, OD-323 BAT17WS 2002/95/EC 2002/96/EC OD-123 BAT17W BAT17W-GS18

    Untitled

    Abstract: No abstract text available
    Text: BAT42W / BAT43W Vishay Semiconductors Small Signal Schottky Diodes Features • These diodes feature very low turn-on voltage and fast switching. These devices are e3 protected by a PN junction guard ring against excessive voltage, such as electrostatic discharges


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    PDF BAT42W BAT43W OD-123 BAT43W 2002/95/EC 2002/96/EC 08-Apr-05

    marking code s4 diode VISHAY

    Abstract: No abstract text available
    Text: SD104AWS / 104BWS / 104CWS Vishay Semiconductors Schottky Diodes Features • • • • • • • • Low turn-on voltage Low capacitance Ultrafast switching Single, double, and ring balanced mixer in narrowband receivers up to 1 GHz. Microminiature plastic package


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    PDF SD104AWS 104BWS 104CWS 2002/95/EC 2002/96/EC OD-323 SD104BWS SD104CWS SD104AWS-GS18 marking code s4 diode VISHAY

    BLH load cell

    Abstract: BLH load cell t2p1 Vishay vt 300 SR-4 STRAIN GAGES vishay sr4 BLH sr-4
    Text: Model T2P1 Vishay BLH Transducers Load Cell FEATURES • Capacity range: 20000 to 100000 lb 9072 to 45360 kg • Tension service • Operational: -30° to +175°F • Low deflection • Environmentally sealed • FM and CSA approved DESCRIPTION T2P1 load cells, developed by Vishay BLH,


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    PDF 08-Apr-05 BLH load cell BLH load cell t2p1 Vishay vt 300 SR-4 STRAIN GAGES vishay sr4 BLH sr-4

    BCP56

    Abstract: PT 10000
    Text: BCP56 NPN Silicon Planar Epitaxial Transistor P b Lead Pb -Free COLLECTOR 2, 4 1. BASE 2.COLLECTOR 3.EMITTER 4.COLLECTOR BASE 1 4 1 2 3 SOT-223 3 EMITTER ABSOLUTE MAXIMUM RATINGS (TA=25˚C) Symbol VCEO VCBO VEBO Rating Collector-Emitter Voltage Collector-Base Voltage


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    PDF BCP56 OT-223 BCP56 100ms 15-Jul-05 OT-223 PT 10000

    BZX84-B3V0-V

    Abstract: z58 diode BZX84C12V Z-59 BZX84c39V BZX84C39-V marking z52 zener code ja bzx84b22v BZX84C2V7-V
    Text: Vishay Semiconductors Small Signal Zener Diodes Features • These diodes are also available in other case styles and other configurations including: the SOD-123 case with type e3 designation BZT52 series, the dual zener diode common anode configuration in the SOT-23


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    PDF OD-123 BZT52 OT-23 OT-23 2002/95/EC 2002/96/EC 18-Jul-08 BZX84-B3V0-V z58 diode BZX84C12V Z-59 BZX84c39V BZX84C39-V marking z52 zener code ja bzx84b22v BZX84C2V7-V

    Untitled

    Abstract: No abstract text available
    Text: BAT17WS Vishay Semiconductors Small Signal Schottky Diode Features • Low turn-on voltage Low capacitance • Ultrafast switching e3 • Ideal for single or double, UHF balanced mixer, modulators and phase detectors • These diodes are also available in case styles


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    PDF BAT17WS OT-23 OD-123 BAT17W 2002/95/EC 2002/96/EC OD-323 BAT17WS BAT17WS-GS18 BAT17WS-GS08

    Untitled

    Abstract: No abstract text available
    Text: BAS170WS Vishay Semiconductors Small Signal Schottky Diode Features • • • • • • Schottky diode for high-speed switching Circuit protection e3 Voltage clamping High-level detecting and mixing Lead Pb -free component Component in accordance to RoHS 2002/95/EC


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    PDF BAS170WS 2002/95/EC 2002/96/EC OD-323 BAS170WS BAS170WS-GS18 BAS170WS-GS08 D-74025 15-Jul-05

    Untitled

    Abstract: No abstract text available
    Text: BAT54W Vishay Semiconductors Small Signal Schottky Diode Features • These diodes feature very low turn-on voltage and fast switching. e3 • These devices are protected by a PN junction guard ring against excessive voltage,such as electrostatic discharges.


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    PDF BAT54W 2002/95/EC 2002/96/EC OD-123 BAT54W BAT54W-GS18 BAT54W-GS08 D-74025 15-Jul-05

    Untitled

    Abstract: No abstract text available
    Text: SD106WS Vishay Semiconductors Small Signal Schottky Diode Features • Low turn-on voltage • Fast switching e3 • This device is protected by a PN junction guard ring against excessive voltage, such as electrostatic discharge • Ideal for precaution of MOS devices, steering,


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    PDF SD106WS 2002/95/EC 2002/96/EC OD-323 SD106WS SD106WS-GS18 SD106WS-Gd D-74025 15-Jul-05

    vishay diode MARKING s6

    Abstract: No abstract text available
    Text: SD103AWS / 103BWS / 103CWS Vishay Semiconductors Small Signal Schottky Diodes Features • The SD103 series is a metal-on-silicon Schottky barrier device which is protected e3 by a PN junction guard ring. • This diode is also available in the MiniMELF case with the type designations LL103A to


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    PDF SD103AWS 103BWS 103CWS SD103 LL103A LL103C, DO-35 SD103A SD103C OD-123 vishay diode MARKING s6

    GR-1217-CORE

    Abstract: No abstract text available
    Text: 7 THIS DRAWING IS UNPUBLISHED. COPYRIGHT - 6 4 5 3 2 RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. LOC ALL RIGHTS RESERVED. AD DIST R E V IS IO N S 00 CONTACT DESCRIPTION LTR REV PER EC 0S1 2 - 0 3 1 8 - 0 4 DATE DWN APVD 15JUL05 BC GS DIMENSION


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    PDF TR-NWT-001217 31MAR2000 15JUL05 GR-1217-CORE

    Untitled

    Abstract: No abstract text available
    Text: THIS DRAWING IS UNPUBLISHED. LP7 COPYRIGHT - 6 7 8 RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. 5 4 2 3 - LOC ALL RIGHTS RESERVED. AD CONTAC DIST 00 R E V IS IO N S p LTR REV A EC R — 1 0 —0 1 9 0 5 4 MENSIONS 0S 1 2 —0 3 1 8 —0 4 APVD


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    PDF 31MAR2000 29JUN05 us040973 \dmmod\53521

    GR-1217-CORE

    Abstract: No abstract text available
    Text: 7 THIS DRAWING IS UNPUBLISHED. COPYRIGHT - 5 6 4 3 2 RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. ALL RIGHTS RESERVED. LOC DIST AD 00 R E V IS IO N S LTR B CONTAC CONNECTOR A XAMPLARY LOA PER EC 0 S 1 2 - 0 3 0 3 - 0 5 DWN APVD 06APR06 BC GS CONTACT LAYOU


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    PDF TR-NWT-001217 31MAR2000 15JUL05 GR-1217-CORE

    GR-1217-CORE

    Abstract: 15JUL05
    Text: 7 THIS DRAWING IS UNPUBLISHED. COPYRIGHT - 5 6 4 3 2 RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. ALL RIGHTS RESERVED. REVISIONS LOC DIST AD 00 LTR DATE DWN APVD REV PER EC 0S1 2 —0318 —04 15JU L05 BC GS A E CR —1 0 —0 1 9 0 5 4 15SEP10


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    PDF 31MAR2000 29JUN05 us040973 \dmmod\5352127-c 15JUL05 GR-1217-CORE 15JUL05

    Untitled

    Abstract: No abstract text available
    Text: 7 THIS DRAWING IS UNPUBLISHED. COPYRIGHT - 5 6 4 3 2 RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. ALL RIGHTS RESERVED. LOC DIST AD 00 R E V IS IO N S LTR C CONTAC DESCRIPTION REV PER EC 0 5 1 2 - 0 3 0 3 - 0 5 DATE DWN APVD 07APR06 BC GS SCALE 5:1


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    PDF 07APR06 31MAR2000