Untitled
Abstract: No abstract text available
Text: BCP56 NPN Silicon Planar Epitaxial Transistor P b Lead Pb -Free COLLECTOR 2, 4 1. BASE 2.COLLECTOR 3.EMITTER 4.COLLECTOR BASE 1 4 1 2 3 SOT-223 3 EMITTER ABSOLUTE MAXIMUM RATINGS (TA=25˚C) Symbol VCEO VCBO VEBO Rating Collector-Emitter Voltage Collector-Base Voltage
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BCP56
OT-223
BCP56
100ms
15-Jul-05
OT-223
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Untitled
Abstract: No abstract text available
Text: BAV74 Surface Mount Switching Diode * “G” Lead Pb -Free SWITCHING DIODE 200m AMPERES Features: *Low Current Leakage *Low Forward Voltage *Reverse Recover Time Trr ≤ 4ns *Small Outline Surface Mount SOT-23 Package 50 VOLTS 3 1 2 SOT-23 SOT-23 Outline Dimensions
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BAV74
OT-23
OT-23
15-Jul-05
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diode fr 210
Abstract: BAV74
Text: BAV74 Surface Mount Switching Diode SWITCHING DIODE P b Lead Pb -Free 200m AMPERES 50 VOLTS Features: *Low Current Leakage *Low Forward Voltage *Reverse Recover Time Trr ≤ 4ns *Small Outline Surface Mount SOT-23 Package 3 1 2 SOT-23 SOT-23 Outline Dimensions
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BAV74
OT-23
OT-23
15-Jul-05
diode fr 210
BAV74
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"BAT17"
Abstract: BAT17 BAT17W BAT17W-GS08 BAT17W-GS18 BAT17WS marking code SOD
Text: BAT17W Vishay Semiconductors Small Signal Schottky Diode Features • Low turn-on voltage Low capacitance • Ultrafast switching e3 • Ideal for single or double, UHF balanced mixer, modulators and phase detectors. • These diodes are also available in case styles
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BAT17W
OT-23
BAT17,
OD-323
BAT17WS
2002/95/EC
2002/96/EC
OD-123
BAT17W-GS18
"BAT17"
BAT17
BAT17W
BAT17W-GS08
BAT17WS
marking code SOD
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SOD123 4001
Abstract: No abstract text available
Text: SD101AW / 101BW / 101CW Vishay Semiconductors Small Signal Schottky Diodes Features • For general purpose applications • The low forward voltage drop and fast switching make it ideal for protection of e3 MOS devices, steering, biasing and coupling diodes for fast switching and low logic level
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SD101AW
101BW
101CW
SD101
LL101A
LL101C,
DO-35
SD101A
SD101C
OD-323
SOD123 4001
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101BW
Abstract: SD101AWS-GS08
Text: SD101AWS / 101BWS / 101CWS Vishay Semiconductors Small Signal Schottky Diodes Features • For general purpose applications • The SD101 series is a Metal-on-silicon e3 Schottky barrier device which is protected by a PN junction guard ring. • The low forward voltage drop and fast switching
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SD101AWS
101BWS
101CWS
SD101
LL101A
LL101C,
DO-35
SD101A
SD101C
OD-323
101BW
SD101AWS-GS08
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arm9 block diagram
Abstract: No abstract text available
Text: Features • AMBA Advanced High-performance Bus AHB Lite Compliant Master • Performs Transfers to/from APB Communication Serial Peripherals • Supports Full-duplex and Half-duplex Peripherals 1. Description The AHB Peripheral DMA Controller (PDC) transfers data between on-chip serial
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6031AS
15-Jul-05
arm9 block diagram
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md 5008 application notes
Abstract: No abstract text available
Text: CAT3604 4-Channel Regulated Charge Pump White LED Driver FEATURES DESCRIPTION Drives individually up to 4 LEDs Output current up to 30mA per LED Digital control On/Off of each LED Compatible with supply voltage of 3V to 5.5V
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CAT3604
16-pad
CAT3604
MD-5008
md 5008 application notes
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Untitled
Abstract: No abstract text available
Text: BAT17W Vishay Semiconductors Small Signal Schottky Diode Features • Low turn-on voltage Low capacitance • Ultrafast switching e3 • Ideal for single or double, UHF balanced mixer, modulators and phase detectors. • These diodes are also available in case styles
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BAT17W
OT-23
BAT17,
OD-323
BAT17WS
2002/95/EC
2002/96/EC
OD-123
BAT17W
BAT17W-GS18
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Untitled
Abstract: No abstract text available
Text: BAT42W / BAT43W Vishay Semiconductors Small Signal Schottky Diodes Features • These diodes feature very low turn-on voltage and fast switching. These devices are e3 protected by a PN junction guard ring against excessive voltage, such as electrostatic discharges
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BAT42W
BAT43W
OD-123
BAT43W
2002/95/EC
2002/96/EC
08-Apr-05
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marking code s4 diode VISHAY
Abstract: No abstract text available
Text: SD104AWS / 104BWS / 104CWS Vishay Semiconductors Schottky Diodes Features • • • • • • • • Low turn-on voltage Low capacitance Ultrafast switching Single, double, and ring balanced mixer in narrowband receivers up to 1 GHz. Microminiature plastic package
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SD104AWS
104BWS
104CWS
2002/95/EC
2002/96/EC
OD-323
SD104BWS
SD104CWS
SD104AWS-GS18
marking code s4 diode VISHAY
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BLH load cell
Abstract: BLH load cell t2p1 Vishay vt 300 SR-4 STRAIN GAGES vishay sr4 BLH sr-4
Text: Model T2P1 Vishay BLH Transducers Load Cell FEATURES • Capacity range: 20000 to 100000 lb 9072 to 45360 kg • Tension service • Operational: -30° to +175°F • Low deflection • Environmentally sealed • FM and CSA approved DESCRIPTION T2P1 load cells, developed by Vishay BLH,
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08-Apr-05
BLH load cell
BLH load cell t2p1
Vishay vt 300
SR-4 STRAIN GAGES
vishay sr4
BLH sr-4
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BCP56
Abstract: PT 10000
Text: BCP56 NPN Silicon Planar Epitaxial Transistor P b Lead Pb -Free COLLECTOR 2, 4 1. BASE 2.COLLECTOR 3.EMITTER 4.COLLECTOR BASE 1 4 1 2 3 SOT-223 3 EMITTER ABSOLUTE MAXIMUM RATINGS (TA=25˚C) Symbol VCEO VCBO VEBO Rating Collector-Emitter Voltage Collector-Base Voltage
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BCP56
OT-223
BCP56
100ms
15-Jul-05
OT-223
PT 10000
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BZX84-B3V0-V
Abstract: z58 diode BZX84C12V Z-59 BZX84c39V BZX84C39-V marking z52 zener code ja bzx84b22v BZX84C2V7-V
Text: Vishay Semiconductors Small Signal Zener Diodes Features • These diodes are also available in other case styles and other configurations including: the SOD-123 case with type e3 designation BZT52 series, the dual zener diode common anode configuration in the SOT-23
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OD-123
BZT52
OT-23
OT-23
2002/95/EC
2002/96/EC
18-Jul-08
BZX84-B3V0-V
z58 diode
BZX84C12V
Z-59
BZX84c39V
BZX84C39-V
marking z52
zener code ja
bzx84b22v
BZX84C2V7-V
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Untitled
Abstract: No abstract text available
Text: BAT17WS Vishay Semiconductors Small Signal Schottky Diode Features • Low turn-on voltage Low capacitance • Ultrafast switching e3 • Ideal for single or double, UHF balanced mixer, modulators and phase detectors • These diodes are also available in case styles
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BAT17WS
OT-23
OD-123
BAT17W
2002/95/EC
2002/96/EC
OD-323
BAT17WS
BAT17WS-GS18
BAT17WS-GS08
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Untitled
Abstract: No abstract text available
Text: BAS170WS Vishay Semiconductors Small Signal Schottky Diode Features • • • • • • Schottky diode for high-speed switching Circuit protection e3 Voltage clamping High-level detecting and mixing Lead Pb -free component Component in accordance to RoHS 2002/95/EC
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BAS170WS
2002/95/EC
2002/96/EC
OD-323
BAS170WS
BAS170WS-GS18
BAS170WS-GS08
D-74025
15-Jul-05
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Untitled
Abstract: No abstract text available
Text: BAT54W Vishay Semiconductors Small Signal Schottky Diode Features • These diodes feature very low turn-on voltage and fast switching. e3 • These devices are protected by a PN junction guard ring against excessive voltage,such as electrostatic discharges.
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BAT54W
2002/95/EC
2002/96/EC
OD-123
BAT54W
BAT54W-GS18
BAT54W-GS08
D-74025
15-Jul-05
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Untitled
Abstract: No abstract text available
Text: SD106WS Vishay Semiconductors Small Signal Schottky Diode Features • Low turn-on voltage • Fast switching e3 • This device is protected by a PN junction guard ring against excessive voltage, such as electrostatic discharge • Ideal for precaution of MOS devices, steering,
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SD106WS
2002/95/EC
2002/96/EC
OD-323
SD106WS
SD106WS-GS18
SD106WS-Gd
D-74025
15-Jul-05
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vishay diode MARKING s6
Abstract: No abstract text available
Text: SD103AWS / 103BWS / 103CWS Vishay Semiconductors Small Signal Schottky Diodes Features • The SD103 series is a metal-on-silicon Schottky barrier device which is protected e3 by a PN junction guard ring. • This diode is also available in the MiniMELF case with the type designations LL103A to
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SD103AWS
103BWS
103CWS
SD103
LL103A
LL103C,
DO-35
SD103A
SD103C
OD-123
vishay diode MARKING s6
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GR-1217-CORE
Abstract: No abstract text available
Text: 7 THIS DRAWING IS UNPUBLISHED. COPYRIGHT - 6 4 5 3 2 RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. LOC ALL RIGHTS RESERVED. AD DIST R E V IS IO N S 00 CONTACT DESCRIPTION LTR REV PER EC 0S1 2 - 0 3 1 8 - 0 4 DATE DWN APVD 15JUL05 BC GS DIMENSION
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OCR Scan
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TR-NWT-001217
31MAR2000
15JUL05
GR-1217-CORE
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Untitled
Abstract: No abstract text available
Text: THIS DRAWING IS UNPUBLISHED. LP7 COPYRIGHT - 6 7 8 RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. 5 4 2 3 - LOC ALL RIGHTS RESERVED. AD CONTAC DIST 00 R E V IS IO N S p LTR REV A EC R — 1 0 —0 1 9 0 5 4 MENSIONS 0S 1 2 —0 3 1 8 —0 4 APVD
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31MAR2000
29JUN05
us040973
\dmmod\53521
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GR-1217-CORE
Abstract: No abstract text available
Text: 7 THIS DRAWING IS UNPUBLISHED. COPYRIGHT - 5 6 4 3 2 RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. ALL RIGHTS RESERVED. LOC DIST AD 00 R E V IS IO N S LTR B CONTAC CONNECTOR A XAMPLARY LOA PER EC 0 S 1 2 - 0 3 0 3 - 0 5 DWN APVD 06APR06 BC GS CONTACT LAYOU
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TR-NWT-001217
31MAR2000
15JUL05
GR-1217-CORE
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GR-1217-CORE
Abstract: 15JUL05
Text: 7 THIS DRAWING IS UNPUBLISHED. COPYRIGHT - 5 6 4 3 2 RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. ALL RIGHTS RESERVED. REVISIONS LOC DIST AD 00 LTR DATE DWN APVD REV PER EC 0S1 2 —0318 —04 15JU L05 BC GS A E CR —1 0 —0 1 9 0 5 4 15SEP10
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31MAR2000
29JUN05
us040973
\dmmod\5352127-c
15JUL05
GR-1217-CORE
15JUL05
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Untitled
Abstract: No abstract text available
Text: 7 THIS DRAWING IS UNPUBLISHED. COPYRIGHT - 5 6 4 3 2 RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. ALL RIGHTS RESERVED. LOC DIST AD 00 R E V IS IO N S LTR C CONTAC DESCRIPTION REV PER EC 0 5 1 2 - 0 3 0 3 - 0 5 DATE DWN APVD 07APR06 BC GS SCALE 5:1
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07APR06
31MAR2000
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