IRFZ48 mosfet driver
Abstract: No abstract text available
Text: IRFZ48RS, IRFZ48RL, SiHFZ48RS, SiHFZ48RL Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Advanced Process Technology • Dynamic dV/dt • 175 °C Operating Temperature • Fast Switching
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IRFZ48RS,
IRFZ48RL,
SiHFZ48RS
SiHFZ48RL
IRFZ48,
SiHFZ48
2002/95/EC
O-262)
O-263)
2011/65/EU
IRFZ48 mosfet driver
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Untitled
Abstract: No abstract text available
Text: IRFPC40, SiHFPC40 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 600 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 60 Qgs (nC) 8.3 Qgd (nC) 30 Configuration • Isolated Central Mounting Hole COMPLIANT • Ease of Paralleling
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IRFPC40,
SiHFPC40
2002/95/EC
O-247AC
O-247AC
O-220AB
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
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Untitled
Abstract: No abstract text available
Text: IRFPE40, SiHFPE40 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 800 RDS(on) (Ω) VGS = 10 V Available • Repetitive Avalanche Rated 2.0 Qg (Max.) (nC) 130 • Isolated Central Mounting Hole Qgs (nC) 17 • Fast Switching
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IRFPE40,
SiHFPE40
2002/95/EC
O-247AC
O-247AC
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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Untitled
Abstract: No abstract text available
Text: IRF820S, SiHF820S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Surface Mount • Available in Tape and Reel • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Fast Switching
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IRF820S,
SiHF820S
2002/95/EC
O-263)
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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mosfet k 2038
Abstract: IRFP450A
Text: IRFP450A, SiHFP450A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement 500 RDS(on) (Ω) VGS = 10 V 0.40 Qg (Max.) (nC) 64 Qgs (nC) 16 Qgd (nC) • Improved Gate, Avalanche and Dynamic dV/dt
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IRFP450A,
SiHFP450A
O-247
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
mosfet k 2038
IRFP450A
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Untitled
Abstract: No abstract text available
Text: IRFBC40AS, SiHFBC40AS Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Low Gate Charge Qg results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness
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IRFBC40AS,
SiHFBC40AS
O-263)
2002/95/EC
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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Untitled
Abstract: No abstract text available
Text: IRFR9120, IRFU9120, SiHFR9120, SiHFU9120 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Surface Mount (IRFR9120, SiHFR9120)
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IRFR9120,
IRFU9120,
SiHFR9120
SiHFU9120
2002/95/EC
O-252)
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Untitled
Abstract: No abstract text available
Text: IRF840S, SiHF840S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Surface Mount • Available in Tape and Reel • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Fast Switching
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IRF840S,
SiHF840S
2002/95/EC
O-263)
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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Untitled
Abstract: No abstract text available
Text: IRFP450LC, SiHFP450LC Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 500 RDS(on) (Ω) VGS = 10 V 0.40 Qg (Max.) (nC) 74 Qgs (nC) 19 Qgd (nC) 35 Configuration Single D Ultra Low Gate Charge Reduced Gate Drive Requirement
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IRFP450LC,
SiHFP450LC
O-247
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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Untitled
Abstract: No abstract text available
Text: IRF520S, SiHF520S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Surface Mount • Available in Tape and Reel • Dynamic dV/dt Rating • Repetitive Avalanche Rated • 175 °C Operating Temperature
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IRF520S,
SiHF520S
2002/95/EC
O-263)
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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IRFR320PBF
Abstract: IRFR320TRL
Text: IRFR320, IRFU320, SiHFR320, SiHFU320 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Surface Mount (IRFR320,SiHFR320) • Straight Lead (IRFU320,SiHFU320)
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IRFR320,
IRFU320,
SiHFR320
SiHFU320
O-252)
IRFR320
IRFU320
2002/95/EC
IRFR320PBF
IRFR320TRL
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IRLR110
Abstract: No abstract text available
Text: IRLR110, IRLU110, SiHLR110, SiHLU110 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Surface Mount (IRLR110, SiHLR110) • Straight Lead (IRLU110, SiHLU110)
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IRLR110,
IRLU110,
SiHLR110
SiHLU110
O-252)
2002/95/EC
IRLR110
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Untitled
Abstract: No abstract text available
Text: IRFPE50, SiHFPE50 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 800 RDS(on) (Ω) VGS = 10 V • Repetitive Avalanche Rated 1.2 Qg (Max.) (nC) 200 • Isolated Central Mounting Hole Qgs (nC) 24 • Fast Switching 110
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IRFPE50,
SiHFPE50
2002/95/EC
O-247AC
O-247AC
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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Untitled
Abstract: No abstract text available
Text: SiHB15N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. RDS(on) max. at 25 °C () • Low Figure-of-Merit (FOM) Ron x Qg 650 VGS = 10 V Qg max. (nC) 76 Qgs (nC) 11 Qgd (nC) • • • • • 0.28 17
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SiHB15N60E
O-263)
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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Untitled
Abstract: No abstract text available
Text: IRFR020, IRFU020, SiHFR020, SiHFU020 www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 60 RDS(on) () VGS = 10 V 0.10 Qg (Max.) (nC) 25 Qgs (nC) 5.8 Qgd (nC) 11 Configuration Single D DPAK (TO-252)
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IRFR020,
IRFU020,
SiHFR020
SiHFU020
O-252)
O-251)
2002/95/EC.
2002/95/EC
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IRFZ48RL
Abstract: SiHFZ48RL
Text: IRFZ48RS, IRFZ48RL, SiHFZ48RS, SiHFZ48RL Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Advanced Process Technology • Dynamic dV/dt • 175 °C Operating Temperature • Fast Switching
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Original
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PDF
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IRFZ48RS,
IRFZ48RL,
SiHFZ48RS
SiHFZ48RL
IRFZ48,
SiHFZ48
2002/95/EC
O-263)
O-262)
11-Mar-11
IRFZ48RL
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Untitled
Abstract: No abstract text available
Text: SiHD7N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • • • • • • 650 RDS(on) max. at 25 °C () VGS = 10 V Qg max. (nC) 0.6 40 Qgs (nC) 5 Qgd (nC) 9 Configuration Single Low Figure-of-Merit (FOM) Ron x Qg
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SiHD7N60E
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: IRFS11N50A, SiHFS11N50A www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Available Ruggedness • Fully Characterized Capacitance
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IRFS11N50A,
SiHFS11N50A
O-263)
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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82123
Abstract: No abstract text available
Text: SPICE Device Model Si7888ADP Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the - 55 °C to 125 °C Temperature Range
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Si7888ADP
18-Jul-08
82123
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SiR470DP
Abstract: S-82146 S82146
Text: SPICE Device Model SiR470DP Vishay Siliconix N-Channel 40-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the - 55 °C to 125 °C Temperature Range
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SiR470DP
18-Jul-08
S-82146
S82146
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si7162
Abstract: s8217
Text: SPICE Device Model Si7162DP Vishay Siliconix N-Channel 40-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the - 55 °C to 125 °C Temperature Range
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Si7162DP
18-Jul-08
si7162
s8217
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Untitled
Abstract: No abstract text available
Text: IRFR024, IRFU024, SiHFR024, SiHFU024 www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 60 RDS(on) () VGS = 10 V 0.10 Qg (Max.) (nC) 25 Qgs (nC) 5.8 Qgd (nC) 11 Configuration Single D DPAK (TO-252)
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Original
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IRFR024,
IRFU024,
SiHFR024
SiHFU024
O-252)
O-251)
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Untitled
Abstract: No abstract text available
Text: IRFR9214, IRFU9214, SiHFR9214, SiHFU9214 www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • P-Channel - 250 RDS(on) () VGS = - 10 V • Surface Mount (IRFR9214, SiHFR9214) 3.0 Qg (Max.) (nC) 14 • Straight Lead (IRFU9214, SiHFU9214)
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IRFR9214,
IRFU9214,
SiHFR9214
SiHFU9214
O-252)
O-251)
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Untitled
Abstract: No abstract text available
Text: IRF9610S, SiHF9610S www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • - 200 RDS(on) () VGS = - 10 V 3 Qg (Max.) (nC) 11 Qgs (nC) 7 Qgd (nC) 4 Configuration Single Surface Mount Available in Tape and Reel
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IRF9610S,
SiHF9610S
O-263)
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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