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    82123

    Abstract: No abstract text available
    Text: SPICE Device Model Si7888ADP Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the - 55 °C to 125 °C Temperature Range


    Original     		PDF Si7888ADP 18-Jul-08 82123

    AN609

    Abstract: No abstract text available
    Text: Si7888ADP_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/Tank and Cauer/Filter configurations are included. When implemented in P-Spice,


    Original     		PDF Si7888ADP AN609, 30-Jul-08 AN609

    3227S

    Abstract: 82123 mosfet SPICE MODEL
    Text: SPICE Device Model Si7888ADP Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the - 55 °C to 125 °C Temperature Range


    Original     		PDF Si7888ADP S-82123-Rev. 15-Sep-08 3227S 82123 mosfet SPICE MODEL