M27C160
Abstract: Q15A
Text: M27C160 16 Megabit 2Meg x 8 or 1Meg x 16 UV EPROM and OTP EPROM FAST ACCESS TIME: 90ns WORD-WIDE or BYTE-WIDE CONFIGURABLE 16 Megabit MASK ROM COMPATIBLE LOW POWER CONSUMPTION – Active Current 70mA at 8MHz – Standby Current 100µA PROGRAMMING VOLTAGE 12.5V ± 0.3V
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Original
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M27C160
50sec.
FDIP42W
M27C160
Q15A
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PDF
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63-Ball
Abstract: fbe063-63-ball ei 306 20 64
Text: ADVANCE INFORMATION Am29LV640M 64 Megabit 4 M x 16-Bit or 4 M x 16-Bit/8 M x 8-Bit MirrorBit 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O Control DISTINCTIVE CHARACTERISTICS ARCHITECTURAL ADVANTAGES • Single power supply operation
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Original
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Am29LV640M
16-Bit
16-Bit/8
128-word/256-byte
8-word/16-byte
63-ball
TS056
LAA064
fbe063-63-ball
ei 306 20 64
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PDF
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o/V29C51400T/V29C51
Abstract: No abstract text available
Text: MOSEL VITELIC PRELIMINARY V29C51400T/V29C51400B 4 MEGABIT 262,144 x 16 BIT/524,288 x 8 BIT 5 VOLT CMOS FLASH MEMORY Features Description • ■ ■ ■ ■ ■ The V29C51400T/V29C51400B is a high speed 262,144 x 16 bit or 524,288 x 8-bit CMOS flash memory. Writing or erasing the device is done with
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Original
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V29C51400T/V29C51400B
BIT/524
16-bit
o/V29C51400T/V29C51
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PDF
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Untitled
Abstract: No abstract text available
Text: MOSEL VITELIC PRELIMINARY V29C51400T/V29C51400B 4 MEGABIT 262,144 x 16 BIT/524,288 x 8 BIT 5 VOLT CMOS FLASH MEMORY Features Description • ■ ■ ■ ■ ■ The V29C51400T/V29C51400B is a high speed 262,144 x 16 bit or 524,288 x 8-bit CMOS flash memory. Writing or erasing the device is done with
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Original
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V29C51400T/V29C51400B
BIT/524
16-bit
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PDF
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AM29PL160CB
Abstract: No abstract text available
Text: Am29PL160C 16 Megabit 2 M x 8-Bit/1 M x 16-Bit CMOS 3.0 Volt-only High Performance Page Mode Flash Memory DISTINCTIVE CHARACTERISTICS • 16 Mbit Page Mode device — Byte (8-bit) or word (16-bit) mode selectable via BYTE# pin — Page size of 16 bytes/8 words: Fast page read
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Original
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Am29PL160C
16-Bit)
AM29PL160CB
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PDF
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FND pinout diagram
Abstract: ws256n spansion FND115 S29WS-N S30MS-P S75WS256NDF S75WS256NEG S75WS-N A0-A22 NK 5-4
Text: S75WS-N Based MCPs Stacked Multi-Chip Product MCP 256 Megabit (16M x 16-bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst-mode Flash Memory with 128 Mb (8M x 16-Bit) RAM Type 4 and 512 Mb (32M x 16-bit) Data Flash or 1 Gb ORNAND Flash Data Sheet PRELIMINARY
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Original
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S75WS-N
16-bit)
FND pinout diagram
ws256n spansion
FND115
S29WS-N
S30MS-P
S75WS256NDF
S75WS256NEG
A0-A22
NK 5-4
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PDF
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Am29Fxxx
Abstract: AM29PL160 AM29PL160C
Text: Am29PL160C 16 Megabit 2 M x 8-Bit/1 M x 16-Bit CMOS 3.0V-only High Performance Page Mode Flash DISTINCTIVE CHARACTERISTICS • 16 Mbit Page Mode device — Byte (8-bit) or word (16-bit) mode selectable via BYTE# pin — Page size of 16 bytes/8 words: Fast page read access from random
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Original
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Am29PL160C
16-Bit)
44-pin
48-pin
120ns,
AM29PL160C
AM29PL160
Am29Fxxx
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PDF
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X0227
Abstract: Am29Fxxx bus operations
Text: Back ADVANCE INFORMATION Am29PL160C 16 Megabit 2 M x 8-Bit/1 M x 16-Bit CMOS 3.0 Volt-only High Performance Page Mode Flash Memory DISTINCTIVE CHARACTERISTICS • 16 Mbit Page Mode device — Byte (8-bit) or word (16-bit) mode selectable via BYTE# pin — Page size of 16 bytes/8 words: Fast page read
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Original
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Am29PL160C
16-Bit)
X0227
Am29Fxxx bus operations
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PDF
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TSOP1-48
Abstract: No abstract text available
Text: CO TS PEM COTS BOO T SECT OR FLASH BOOT SECTOR Austin Semiconductor, Inc. AS29LV016J 16 Megabit 2M x 8-Bit / 1M x 16-Bit CMOS 3.0 Volt-Only Boot Sector Flash Memory DISTINCTIVE CHARACTERISTICS ARCHITECTURAL ADVANTAGES PERFORMANCE CHARACTERISTICS Single Power Supply Operation
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Original
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AS29LV016J
16-Bit)
AS29LV016
128-word/256-byte
AS29LV016J
TSOP1-48
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PDF
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CQFP 240 Aeroflex
Abstract: 5962-9461110 military mcm 1553 5962-9461108 5962-9461109 5962-9461108hxc O28 Package 5962-9461109HM 5962-9461110HMC a1855
Text: ACT–S512K32 High Speed 16 Megabit SRAM Multichip Module Features • 4 Low Power CMOS 512K x 8 SRAMs in one MCM ■ Factory configured as 512K x 32; User configurable as 1M x 16 or 2M x 8 ■ Input and Output TTL & CMOS Compatible Design ■ Fast 17,20,25,35,45,55ns Access Times
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Original
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S512K32
MIL-PRF-38534
MIL-STD-883
MIL-STD-883
SCD1660
CQFP 240 Aeroflex
5962-9461110
military mcm 1553
5962-9461108
5962-9461109
5962-9461108hxc
O28 Package
5962-9461109HM
5962-9461110HMC
a1855
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PDF
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smd code F18
Abstract: act-s512k32n 5962-9461110HTC ACT-S512K32N-017P7Q 5962-9461110 CQFP 80 footprint cqfp 280
Text: ACT–S512K32 High Speed 16 Megabit SRAM Multichip Module Features • 4 Low Power CMOS 512K x 8 SRAMs in one MCM ■ Factory configured as 512K x 32; User configurable as 1M x 16 or 2M x 8 ■ Input and Output TTL & CMOS Compatible Design ■ Fast 17,20,25,35,45,55ns Access Times
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Original
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S512K32
MIL-PRF-38534
MIL-STD-883
SCD1660
smd code F18
act-s512k32n
5962-9461110HTC
ACT-S512K32N-017P7Q
5962-9461110
CQFP 80
footprint cqfp 280
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PDF
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Untitled
Abstract: No abstract text available
Text: ACT–S512K32 High Speed 16 Megabit SRAM Multichip Module Features • 4 Low Power CMOS 512K x 8 SRAMs in one MCM ■ Factory configured as 512K x 32; User configurable as 1M x 16 or 2M x 8 ■ Input and Output TTL & CMOS Compatible Design ■ Fast 17,20,25,35,45,55ns Access Times
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Original
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S512K32
MIL-STD-883
MIL-STD-883
SCD1660
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PDF
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M27C800
Abstract: M27V800 Q15A
Text: M27V800 LOW VOLTAGE 8 Megabit 1Meg x 8 or 512K x 16 UV EPROM and OTP EPROM PRELIMINARY DATA LOW VOLTAGE READ OPERATION: 3V to 5.5V FAST ACCESS TIME: 110ns WORD-WIDE or BYTE-WIDE CONFIGURABLE 8 Megabit MASK ROM REPLACEMENT LOW POWER CONSUMPTION – Active Current 70mA at 8MHz
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Original
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M27V800
110ns
26sec.
M27V800
M27C800
M27C800
Q15A
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PDF
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M27C800
Abstract: PLCC44 Q15A
Text: M27C800 8 Megabit 1Meg x 8 or 512K x 16 UV EPROM and OTP EPROM FAST ACCESS TIME: 90ns WORD-WIDE or BYTE-WIDE CONFIGURABLE 8 Megabit MASK ROM REPLACEMENT LOW POWER CONSUMPTION – Active Current 70mA at 8MHz – Stand-by Current 100µA PROGRAMMING VOLTAGE 12.5V ± 0.3V
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Original
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M27C800
26sec.
M27C800
PLCC44
Q15A
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PDF
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Untitled
Abstract: No abstract text available
Text: /TT SGS-THOMSON ^ 7 # . K !t 0 g ilL i© ìn iS @ K 5 D ( g § M 2 7 C 1 6 0 16 Megabit (2Meg x 8 or 1Meg x 16) UV EPROM and OTP EPROM FAST ACCESS TIME: 90ns WORD-WIDE or BYTE-WIDE CONFIGURABLE 16 Megabit MASK ROM COMPATIBLE LOW POWER CONSUMPTION
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OCR Scan
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100jiA
50sec.
FDIP42W
M27C160
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PDF
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27C160
Abstract: No abstract text available
Text: r i7 S G S -TH O M S O N M27C160 CMOS 16 Megabit 2M x 8 or 1M x 16 UV EPROM ADVANCE DATA • FAST ACC ESS TIME: 150ns ■ W O RD-W IDE or BYTE-W IDE CONFIGURABLE ■ 16 Megabit, 42 Pin, MASK ROM COMPATIBLE ■ LOW POWER CONSUMPTION - Active Current 70m A at 8MHz
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OCR Scan
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M27C160
150ns
10sec.
M27C160
27C160
FDIP42W
27C160
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PDF
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Untitled
Abstract: No abstract text available
Text: r= 7 S G S -T H O M S O N ^ 7 # . IM O œ ilL iO T tM O tg M 27V160 LOW VOLTAGE 16 Megabit 2Meg x 8 or 1Meg x 16 UV EPROM and OTP EPROM • LOW VOLTAGE READ OPERATION: 3V to 5.5V ■ FAST ACCESS TIME: 120ns ■ WORD-WIDE or BYTE-WIDE CONFIGURABLE ■ 16 Megabit MASK ROM REPLACEMENT
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OCR Scan
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27V160
120ns
70mAat
100pA
FDIP42W
50sec.
M27V160
M27C160
07flc
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PDF
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Untitled
Abstract: No abstract text available
Text: ADVANCE INFORMATION A M D ii Am29PL160C 16 Megabit 2 M x 8-Bit/1 M x 16-Bit CMOS 3.0 Volt-only High Performance Page Mode Flash Memory DISTINCTIVE CHARACTERISTICS • 16 Mbit Page Mode device ■ — Byte (8-bit) or word (16-bit) mode selectable via BYTE# pin
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OCR Scan
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Am29PL160C
16-bit)
29PL160C
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PDF
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Untitled
Abstract: No abstract text available
Text: A M D J1 ADVANCE INFORMATION Am29PL160C 16 Megabit 2 M x 8-Bit/I M x 16-Bit CMOS 3.0 Volt-only High Performance Page Mode Flash Memory DISTINCTIVE CHARACTERISTICS • 16 Mbit Page Mode device ■ — Byte (8-bit) or word (16-bit) mode selectable via BYTE# pin
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OCR Scan
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Am29PL160C
16-bit)
29PL160C
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PDF
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29PL160C
Abstract: 29pl160
Text: ADVANCE INFO R M ATIO N AM D i i Am29PL160C 16 Megabit 2 M x 8-bit/1 M x 16-Bit CMOS 3.0 Volt-only High Performance Page Mode Flash Memory DISTINCTIVE CHARACTERISTICS • 16 Mbit Page Mode device ■ — Byte (8-bit) or word (16-bit) mode selectable via
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OCR Scan
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Am29PL160C
16-Bit)
44-Pin
29PL160C
29PL160C
29pl160
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PDF
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Untitled
Abstract: No abstract text available
Text: M O SEL VI TELI C V29C51400T/V29C51400B 4 MEGABIT 262,144 x 16 BIT/524,288 x 8 BIT 5 VOLT CMOS FLASH MEMORY PRELIMINARY Features Description • ■ ■ ■ ■ ■ The V29C51400T/V29C51400B is a high speed 262,144 x 16 bit or 524,288 x 8-bit CMOS flash
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OCR Scan
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V29C51400T/V29C51400B
BIT/524
16-bit
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PDF
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Untitled
Abstract: No abstract text available
Text: SGS-THOMSON llllMJilLliMWIiei M27V800 LOW VOLTAGE 8 Megabit 1 Meg x 8 or 512K x 16 UV EPROM and OTP EPROM PRELIMINARY DATA LOW VOLTAGE READ OPERATION: 3V to 5.5V FAST ACCESS TIME: 110ns WORD-WIDE or BYTE-WIDE CONFIGURABLE 8 Megabit MASK ROM REPLACEMENT LOW POWER CONSUMPTION
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OCR Scan
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M27V800
110ns
FDIP42W
26sec.
M27V800
M27C800
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PDF
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Untitled
Abstract: No abstract text available
Text: SGS-THOMSON raD»HlLll e'inM l)ì!lD(ei M 27C 160 16 Mb (2Mb x 8 or 1Mb x 16) UV EPROM and OTP EPROM • 5 V ± 10% SUPPLY VOLTAGE in READ OPERATION ■ FAST ACCESS TIME: 90ns ■ BYTE-WIDE or WORD-WIDE CONFIGURABLE > 16 Megabit MASK ROM REPLACEMENT > LOW POWER CONSUMPTION
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OCR Scan
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50sec.
M27C160
FDIP42W
M27C160
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PDF
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military multichip
Abstract: No abstract text available
Text: i — i— r 16 Megabit SRAM Multichip Module Features • ■ ■ ■ ■ 4 Low Power CMOS 512K x 8 SRAMs in one MCM Factory configured as 512K x 32; User configurable as 1M x 16 or 2M x 8 Input and Output TTL & CMOS Compatible Design Fast 17,20,25,35,45,55ns Access Times
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OCR Scan
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MIL-PRF-38534
68-Lead,
IL-STD-883
MIL-STD-883
SCD1660
military multichip
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PDF
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