Untitled
Abstract: No abstract text available
Text: M27C160 16 Megabit 2Meg x 8 or 1Meg x 16 UV EPROM and OTP EPROM FAST ACCESS TIME: 90ns WORD-WIDE or BYTE-WIDE CONFIGURABLE 16 Megabit MASK ROM COMPATIBLE LOW POWER CONSUMPTION – Active Current 70mA at 8MHz – Standby Current 100µA PROGRAMMING VOLTAGE 12.5V ± 0.3V
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Original
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PDF
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M27C160
50sec.
FDIP42W
M27C160
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M27C160
Abstract: Q15A
Text: M27C160 16 Megabit 2Meg x 8 or 1Meg x 16 UV EPROM and OTP EPROM FAST ACCESS TIME: 90ns WORD-WIDE or BYTE-WIDE CONFIGURABLE 16 Megabit MASK ROM COMPATIBLE LOW POWER CONSUMPTION – Active Current 70mA at 8MHz – Standby Current 100µA PROGRAMMING VOLTAGE 12.5V ± 0.3V
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Original
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PDF
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M27C160
50sec.
FDIP42W
M27C160
Q15A
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Untitled
Abstract: No abstract text available
Text: M27V160 LOW VOLTAGE 16 Megabit 2Meg x 8 or 1Meg x 16 UV EPROM and OTP EPROM LOW VOLTAGE READ OPERATION: 3V to 5.5V FAST ACCESS TIME: 120ns WORD-WIDE or BYTE-WIDE CONFIGURABLE 16 Megabit MASK ROM REPLACEMENT LOW POWER CONSUMPTION – Active Current 70mA at 8MHz
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Original
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PDF
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M27V160
120ns
50sec.
M27V160
M27C160
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AN620 datasheet
Abstract: M27C160 Q15A
Text: M27C160 16 Megabit 2Meg x 8 or 1Meg x 16 UV EPROM and OTP EPROM FAST ACCESS TIME: 90ns WORD-WIDE or BYTE-WIDE CONFIGURABLE 16 Megabit MASK ROM COMPATIBLE LOW POWER CONSUMPTION – Active Current 70mA at 8MHz – Standby Current 100µA PROGRAMMING VOLTAGE 12.5V ± 0.3V
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Original
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PDF
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M27C160
50sec.
FDIP42W
M27C160
AN620 datasheet
Q15A
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Untitled
Abstract: No abstract text available
Text: M27C160 16 Megabit 2Meg x 8 or 1Meg x 16 UV EPROM and OTP EPROM DATA BRIEFING FAST ACCESS TIME: 90ns WORD-WIDE or BYTE-WIDE CONFIGURABLE 16 Megabit MASK ROM REPLACEMENT LOW POWER CONSUMPTION – Active Current 70mA at 8MHz – Standby Current 100µA PROGRAMMING VOLTAGE 12.5V ± 0.3V
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Original
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PDF
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M27C160
50sec.
FDIP42W
M27C160
AI01264
100ns
120ns
Q15A-1
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M27V160
Abstract: 32 megabit 16 bit
Text: M27V160 LOW VOLTAGE 16 Megabit 2Meg x 8 or 1Meg x 16 UV EPROM and OTP EPROM DATA BRIEFING LOW VOLTAGE READ OPERATION: 3V to 5.5V FAST ACCESS TIME: 120ns WORD-WIDE or BYTE-WIDE CONFIGURABLE 16 Megabit MASK ROM REPLACEMENT LOW POWER CONSUMPTION – Active Current 70mA at 8MHz
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Original
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PDF
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M27V160
120ns
50sec.
M27V160
M27C160
FDIP42W
Q15A-1
120ns
32 megabit 16 bit
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63-Ball
Abstract: fbe063-63-ball ei 306 20 64
Text: ADVANCE INFORMATION Am29LV640M 64 Megabit 4 M x 16-Bit or 4 M x 16-Bit/8 M x 8-Bit MirrorBit 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O Control DISTINCTIVE CHARACTERISTICS ARCHITECTURAL ADVANTAGES • Single power supply operation
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Original
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PDF
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Am29LV640M
16-Bit
16-Bit/8
128-word/256-byte
8-word/16-byte
63-ball
TS056
LAA064
fbe063-63-ball
ei 306 20 64
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o/V29C51400T/V29C51
Abstract: No abstract text available
Text: MOSEL VITELIC PRELIMINARY V29C51400T/V29C51400B 4 MEGABIT 262,144 x 16 BIT/524,288 x 8 BIT 5 VOLT CMOS FLASH MEMORY Features Description • ■ ■ ■ ■ ■ The V29C51400T/V29C51400B is a high speed 262,144 x 16 bit or 524,288 x 8-bit CMOS flash memory. Writing or erasing the device is done with
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PDF
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V29C51400T/V29C51400B
BIT/524
16-bit
o/V29C51400T/V29C51
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M27C160
Abstract: M27V160 M27W160 Q15A
Text: M27V160 16 Mb 2Mb x 8 or 1Mb x 16 LOW VOLTAGE UV EPROM and OTP EPROM DATA BRIEFING LOW VOLTAGE READ OPERATION: 3V to 5.5V FAST ACCESS TIME: 110ns BYTE-WIDE or WORD-WIDE CONFIGURABLE 16 Megabit MASK ROM REPLACEMENT LOW POWER CONSUMPTION 44 42 – Active Current 70mA at 8MHz
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Original
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PDF
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M27V160
110ns
50sec.
FDIP42W
M27C160
0020h
00B1h
M27V160
M27W160
M27C160
M27W160
Q15A
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Untitled
Abstract: No abstract text available
Text: S75WS-N Based MCPs Stacked Multi-Chip Product MCP 256 Megabit (16M x 16-bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst-mode Flash Memory with 128 Mb (8M x 16-Bit) RAM Type 4 and 512 Mb (32M x 16-bit) Data Flash or 1 Gb ORNAND Flash Data Sheet PRELIMINARY
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Original
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PDF
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S75WS-N
16-bit)
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M27C160
Abstract: No abstract text available
Text: r Z J SGS-THOMSON ^ 7 # HDfêMIlLKgTIKORIDtgi M27C160 CMOS 16 Megabit 2M x 8 or 1M x 16 UV EPROM ABBREVIATED DATA FAST ACCESS TIME: 150ns WORD-WIDE or BYTE-WIDE CONFIGURABLE 16 Megabit, 42 Pin, MASK ROM COMPATIBLE LOW POWER CONSUMPTION - Active Current 70mA at 8MHz
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OCR Scan
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PDF
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M27C160
150ns
100pA
10sec.
M27C160
Q15A-1
VA0074-0
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Untitled
Abstract: No abstract text available
Text: SGS-THOMSON M27V160 LOW VOLTAGE 16 Megabit 2Meg x 8 or 1Meg x 16 _ UV EPROM and OTP EPROM PR ELIM IN A R Y DATA • LOW VOLTAGE READ OPERATION: 3V to 5.5V ■ FAST ACCESS TIME: 110ns ■ WORD-WIDE or BYTE-WIDE CONFIGURABLE ■ 16 Megabit M ASK ROM REPLACEMENT
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OCR Scan
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PDF
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110ns
100jiA
50sec.
27V160
M27C160
M27V160
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M27C160
Abstract: ZJA16
Text: SGS-THOMSON Kiöa Mi[LllOT o K!]ö©S M27C160 16 Megabit (2Meg x 8 or 1Meg x 16) UV EPROM and OTP ROM • FAST ACCESS TIME - 100ns (Random Address) ■ WORD-WIDE or BYTE-WIDE CONFIGURABLE ■ 16 Megabit MASK ROM COMPATIBLE ■ LOW POWER CONSUMPTION - Active Current 70mA at 8MHz
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OCR Scan
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PDF
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M27C160
100ns
50sec.
FDIP42W
M27C160
7T2T237
00bfl4cn
ZJA16
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Untitled
Abstract: No abstract text available
Text: S G S -1 H 0 M S 0 N RfflQ @HLIiOT®RD[l©i M27C160 16 Megabit 2Meg x 8 or 1Meg x 16 UV EPROM and OTP ROM • FAST ACCESS TIME - 100ns (Random Address) ■ WORD-WIDE or BYTE-WIDE CONFIGURABLE ■ 16 Megabit MASK ROM COMPATIBLE ■ LOW POWER CONSUMPTION
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OCR Scan
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PDF
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M27C160
100ns
70mAat
50sec.
FDIP42W
FDIP42W
M27C160
|
|
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27c160
Abstract: No abstract text available
Text: rZ 7 SGS-THOMSON RfflD g[^@ll[L[i(glT^ ia(gS M27C160 CMOS 16 Megabit (2M x 8 or 1M x 16 UV EPROM ADVANCE DATA • FAST ACCESS TIME: 150ns ■ WORD-WIDE or BYTE-WIDE CONFIGURABLE ■ 16 Megabit, 42 Pin, MASK ROM COMPATIBLE ■ LOW POWER CONSUMPTION - Active Current 70mA at 8MHz
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OCR Scan
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PDF
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M27C160
150ns
10sec.
M27C160
27C160
FDIP42W
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Untitled
Abstract: No abstract text available
Text: /TT SGS-THOMSON ^ 7 # . K !t 0 g ilL i© ìn iS @ K 5 D ( g § M 2 7 C 1 6 0 16 Megabit (2Meg x 8 or 1Meg x 16) UV EPROM and OTP EPROM FAST ACCESS TIME: 90ns WORD-WIDE or BYTE-WIDE CONFIGURABLE 16 Megabit MASK ROM COMPATIBLE LOW POWER CONSUMPTION
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OCR Scan
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PDF
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100jiA
50sec.
FDIP42W
M27C160
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M27C
Abstract: No abstract text available
Text: Æ T SGS-THOMSON M27C160 * 7 1 . M O » iIL iO T [iM CMOS 16 Megabit 2M x 8 or 1M x 16 UV EPROM A D VA N CE DATA FAST ACCESS TIME: 150ns WORD-WIDE or BYTE-WIDE CONFIGURABLE 16 Megabit, 42 Pin, MASK ROM COMPATIBLE LOW POWER CONSUMPTION - Active Current 70mA at 8MHz
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OCR Scan
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PDF
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M27C160
150ns
10sec.
M27C160
IP42W
M27C
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27C160
Abstract: No abstract text available
Text: r i7 S G S -TH O M S O N M27C160 CMOS 16 Megabit 2M x 8 or 1M x 16 UV EPROM ADVANCE DATA • FAST ACC ESS TIME: 150ns ■ W O RD-W IDE or BYTE-W IDE CONFIGURABLE ■ 16 Megabit, 42 Pin, MASK ROM COMPATIBLE ■ LOW POWER CONSUMPTION - Active Current 70m A at 8MHz
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OCR Scan
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PDF
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M27C160
150ns
10sec.
M27C160
27C160
FDIP42W
27C160
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Untitled
Abstract: No abstract text available
Text: HN27C4000 Series Preliminary 4M 256K x 16-bit or 512K x 8-bit UV and OTP EPROM • DESCRIPTION The Hitachi HN27C4000 is a 4-Megabit Ultraviolet Erasable and One-Time Programmable Electrically Programmable Read Only Memory organized as 524,288 x 8-bits or as 262,144 x 16-bits.
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OCR Scan
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PDF
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HN27C4000
16-bit
16-bits.
HN27C4000
32-bit
40-pin
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Untitled
Abstract: No abstract text available
Text: r= 7 S G S -T H O M S O N ^ 7 # . IM O œ ilL iO T tM O tg M 27V160 LOW VOLTAGE 16 Megabit 2Meg x 8 or 1Meg x 16 UV EPROM and OTP EPROM • LOW VOLTAGE READ OPERATION: 3V to 5.5V ■ FAST ACCESS TIME: 120ns ■ WORD-WIDE or BYTE-WIDE CONFIGURABLE ■ 16 Megabit MASK ROM REPLACEMENT
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OCR Scan
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PDF
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27V160
120ns
70mAat
100pA
FDIP42W
50sec.
M27V160
M27C160
07flc
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M27C
Abstract: 27C160 M27C16
Text: 52E J> m TTETSa? 0037bbb TflO • SGTH T~%~I3 - 2 e? S G S - 1H O M S O N S fi S - T H O M S O N L iM M Q § M 27C160 CMOS 16 Megabit 2M x 8 or 1M x 16 UV EPROM ADVANCE DATA FAST ACCESS TIME: 150ns WORD-WIDE or BYTE-WIDE CONFIGURABLE 16 Megabit, 42 Pin, MASK ROM COMPATIBLE
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OCR Scan
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PDF
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0037bbb
27C160
150ns
10sec.
M27C160
FDIP42W
M27C
M27C16
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27V800
Abstract: No abstract text available
Text: SGS-THOMSON M27V800 LOW VOLTAGE 8 Megabit 1 Meg x 8 or 512K x 16 _ UV EPROM and OTP EPROM PRELIMINARY DATA LOW VOLTAGE READ OPERATION: 3V to 5.5V FAST ACCESS TIME: 110ns WORD-WIDE or BYTE-WIDE CONFIGURABLE 8 Megabit MASK ROM REPLACEMENT
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OCR Scan
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PDF
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M27V800
110ns
100jiA
26sec.
M27V800
M27C800
27V800
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Untitled
Abstract: No abstract text available
Text: ADVANCE INFORMATION A M D ii Am29PL160C 16 Megabit 2 M x 8-Bit/1 M x 16-Bit CMOS 3.0 Volt-only High Performance Page Mode Flash Memory DISTINCTIVE CHARACTERISTICS • 16 Mbit Page Mode device ■ — Byte (8-bit) or word (16-bit) mode selectable via BYTE# pin
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OCR Scan
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PDF
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Am29PL160C
16-bit)
29PL160C
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Untitled
Abstract: No abstract text available
Text: A M D J1 ADVANCE INFORMATION Am29PL160C 16 Megabit 2 M x 8-Bit/I M x 16-Bit CMOS 3.0 Volt-only High Performance Page Mode Flash Memory DISTINCTIVE CHARACTERISTICS • 16 Mbit Page Mode device ■ — Byte (8-bit) or word (16-bit) mode selectable via BYTE# pin
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OCR Scan
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PDF
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Am29PL160C
16-bit)
29PL160C
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