military mcm 1553
Abstract: SMD A18 Transistor O28 Package smd transistor A8 ACT-S512K32V smd A018
Text: ACT-S512K32V High Speed 3.3Volt 16 Megabit SRAM Multichip Module Features 4 Low Power CMOS 512K x 8 SRAMs in one MCM Overall configuration as 512K x 32 • Input and Output TTL Compatible ■ 17, 20, 25, 35 & 45ns Access Times, 15ns Available by Special Order
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ACT-S512K32V
MIL-PRF-38534
MIL-STD-883
ACT-S512K32V
SCD3360
military mcm 1553
SMD A18 Transistor
O28 Package
smd transistor A8
smd A018
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smd code F18
Abstract: act-s512k32n 5962-9461110HTC ACT-S512K32N-017P7Q 5962-9461110 CQFP 80 footprint cqfp 280
Text: ACT–S512K32 High Speed 16 Megabit SRAM Multichip Module Features • 4 Low Power CMOS 512K x 8 SRAMs in one MCM ■ Factory configured as 512K x 32; User configurable as 1M x 16 or 2M x 8 ■ Input and Output TTL & CMOS Compatible Design ■ Fast 17,20,25,35,45,55ns Access Times
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S512K32
MIL-PRF-38534
MIL-STD-883
SCD1660
smd code F18
act-s512k32n
5962-9461110HTC
ACT-S512K32N-017P7Q
5962-9461110
CQFP 80
footprint cqfp 280
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5962-9461110HTC
Abstract: ACT-S512K32N-017P7Q F1 Package
Text: ACT–S512K32 High Speed 16 Megabit SRAM Multichip Module Features • 4 Low Power CMOS 512K x 8 SRAMs in one MCM ■ Factory configured as 512K x 32; User configurable as 1M x 16 or 2M x 8 CIRCUIT TECHNOLOGY www.aeroflex.com ■ Input and Output TTL & CMOS Compatible Design
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S512K32
MIL-PRF-38534
MIL-STD-883
MIL-STD-883
SCD1660
5962-9461110HTC
ACT-S512K32N-017P7Q
F1 Package
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CQFP 240 Aeroflex
Abstract: 5962-9461110 military mcm 1553 5962-9461108 5962-9461109 5962-9461108hxc O28 Package 5962-9461109HM 5962-9461110HMC a1855
Text: ACT–S512K32 High Speed 16 Megabit SRAM Multichip Module Features • 4 Low Power CMOS 512K x 8 SRAMs in one MCM ■ Factory configured as 512K x 32; User configurable as 1M x 16 or 2M x 8 ■ Input and Output TTL & CMOS Compatible Design ■ Fast 17,20,25,35,45,55ns Access Times
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S512K32
MIL-PRF-38534
MIL-STD-883
MIL-STD-883
SCD1660
CQFP 240 Aeroflex
5962-9461110
military mcm 1553
5962-9461108
5962-9461109
5962-9461108hxc
O28 Package
5962-9461109HM
5962-9461110HMC
a1855
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Untitled
Abstract: No abstract text available
Text: W E l e c t r o n ic h it e D C e s ig n s W S512K32-XXX o r p o r a t io n 512Kx32 SRAM MODULE, SMD 5962-94611 FEATURES • Access Tim es of 15*, 17, 20, 25, 35, 45, 55ns ■ TTL Compatible Inputs and Outputs ■ Packaging ■ 5 V o lt Power Supply • 66 pin, PGA Type, 1.075" square, Hermetic Ceramic HIP
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S512K32-XXX
512Kx32
512Kx32,
10HYX
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SAMSUNG SRAM
Abstract: No abstract text available
Text: ACT-S512K32V High Speed 3.3Volt 16 Megabit SRAM Multichip Module Features • 4 Low Power CMOS 512K x 8 SRAMs in one MCM ■ Overall configuration as 512K x 32 ■ Input and Output TTL Compatible ■ 17, 20, 25, 35 & 45ns Access Times, 15ns Available by Special Order
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ACT-S512K32V
68-Lead,
66-Lead,
MIL-PRF-38534
MIL-STD-883
SCD3360
SAMSUNG SRAM
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td 502 ab
Abstract: No abstract text available
Text: - r ~ r CS W S512K32-XXX 512Kx32 SRAM MODULE, SMD 5962-94611 P R E L IM IN A R Y * FEATURES • A c c e s s Tim es of 17, 20, 25, 35, 45, 55n s TTL Com patible Inputs and Outputs ■ Pa ckaging 5 V o lt Pow er Su p p ly • 66 pin, P G A Type, 1.385 inch square, Herm etic
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S512K32-XXX
512Kx32
512Kx32,
07HYX
08HYX
09HYX
10HYX
06HMX
512Kx
09HMX
td 502 ab
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Untitled
Abstract: No abstract text available
Text: VZA I/VHITE /M ICROELECTRONICS 512Kx32 SRAM MODULE W S512K32B-XXXE PRELIMINARY* FEATURES • A ccess Times of 15,17, 20, 25ns ■ TTL Compatible Inputs and Outputs ■ Low Power BiCM OS ■ 5 Volt Power Supply ■ Packaging ■ • 66 pin, PGA Type, 1.385 inch square, Hermetic
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S512K32B-XXXE
512Kx32
S512K32B-XG2XE
S512K32NB-XH2XE
S512K32B-XG4TXE
512Kx32
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Untitled
Abstract: No abstract text available
Text: ça W S512K32-XXX WHITE /MICROELECTRONICS 512Kx32 SRAM MODULE, SMD 5962-94611 P R E L IM IN A R Y * FEATURES • A cce ss Times of 70, 8 5 ,1 0 0 ,120ns ■ Commercial, Industrial and Military Temperature Ranges ■ Packaging ■ TTL Compatible Inputs and Outputs
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S512K32-XXX
512Kx32
120ns
66-pin,
01HZX
100ns
02HZX
03HZX
04HZX
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ir 035P
Abstract: military multichip
Text: ACT-S512K32V High Speed 3.3Volt 16 Megabit SRAM Multichip Module Features • 4 Low Power CMOS 512K x 8 SRAMs in one MCM ■ Overall configuration as 512K x 32 ■ Input and Output TTL Compatible ■ 17, 20, 25, 35 & 45ns Access Times, 15ns Available by Special Order
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ACT-S512K32V
68-Lead,
66-Pin,
MIL-PRF-38534
ir 035P
military multichip
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Untitled
Abstract: No abstract text available
Text: i— i— i— i— i— i— r i— i— i— i— i— i— i— i— i— r ACT-S512K32 High Speed 16 Megabit SRAM Multichip Module Features • ■ ■ ■ ■ 4 Low Power CMOS 512K x 8 SRAMs in one MCM Factory configured as 512K x 32; User configurable as 1M x 16 or 2M x 8
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ACT-S512K32
MIL-PRF-38534
68-Lead,
SCD1660
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Untitled
Abstract: No abstract text available
Text: I/I/HITE /M ICROELECTRONICS 512Kx32 3.3V SRAM MODULE W S512K32BV-XXXE PRELIMINARY* FEATURES • A c c e s s Tim es of 15f, 17, 2 0 n s ■ Com m ercial, Industrial and M ilita ry Tem perature R a n g e s ■ M IL -S T D -8 8 3 C om pliant D e vic e s A va ilab le
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512Kx32
S512K32BV-XXXE
66-pin,
512KX32
1Mx16
15b3b
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I01b-1
Abstract: 01b SMD
Text: WHITE /M IC R O E L E C T R O N IC S Ç 2 W S512K32-XXX 512Kx32 SRAM MODULE. SMD 5962-94611 PRELIMINARY* FEATURES • A ccess Tim es o f 70, 8 5 , 1 0 0 , 120ns ■ C om m ercial, In d u stria l and M ilita ry T e m pe ratu re Ranges ■ Packaging ■ TTL C om p atible Inputs and O utputs
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S512K32-XXX
512Kx32
120ns
66-pin,
512Kx32,
1024Kx16
01HXX
02HXX
03HXX
04HXX
I01b-1
01b SMD
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las 2615
Abstract: QML-38534
Text: REVISIONS LTR DESCRIPTION DATE YR-MO-DA APPROVED REV SHEET REV SHEET 15 16 17 REV STATUS OF SHEETS PMIC N/A STANDARD MICROCIRCUIT DRAWING THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS AND AGENCIES OF THE DEPARTMENT OF DEFENSE 18 19 20 21 REV SHEET
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512kx
32-bit,
5962-E506-96
T0DM70Ã
0025Mbl
las 2615
QML-38534
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Untitled
Abstract: No abstract text available
Text: VZÄ S512K32V-XXX WHITE /MICROELECTRONICS 512Kx32 SRAM 3.3V MODULE PRELIMINARY * FEATURES • A ccess Tim es of 15+, 17, 20ns ■ Low Pow er CMOS ■ M IL-STD -883 C om pliant Devices A v a ila b le ■ TTL C om p atible Inputs and O utputs ■ Low V oltag e O peration
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WS512K32V-XXX
512Kx32
66-pin,
S512K32V-XG
S512K
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Untitled
Abstract: No abstract text available
Text: ça S512K32BV-XXXE M/HITE / M I C R O E L E C T R O N I C S 512Kx32 3.3V SR A M MODULE PR ELIM IN A RY* FEATURES • A ccess Tim es o f 1 5 t, 17, 20ns ■ ■ M IL-S TD -883 C o m p lia n t D evices A v a ila b le ■ 3.3 V o lt P ow er S upply ■ Low V o lta g e O peration
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WS512K32BV-XXXE
512Kx32
66-pin,
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Untitled
Abstract: No abstract text available
Text: a S512K32-XXX WHITE /M ICROELECTRONICS 512Kx32 SRAM MODULE PRELIMINARY* FEATURES • A cce ss Tim es of 70, 8 5 , 1 0 0 , 120nS ■ ■ Packaging ■ TTL C o m p a tib le Inputs and O utputs • 6 6 - p i n , PGA Type, 1.385 inch square, H erm etic C eram ic HIP Package 402 , S M D N u m b e r 5962-9461 1
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WS512K32-XXX
512Kx32
120nS
04HZX
01HMX
100nS
02HMX
03HMX
04HMX
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Untitled
Abstract: No abstract text available
Text: f i - YZÀ S512K32B-XXXE WHITE / M I C R O E L E C T R O N I C S 512Kx32 SRAM MODULE ADVANCED* FEATURES • A ccess Tim es o f 1 5 ,1 7 , 20, 25ns ■ Low P ow er BiCMOS ■ ■ BiCM O S: • R a d ia tio n T o le ra n t w ith E p ita x ia l Layer Die Packaging
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WS512K32B-XXXE
512Kx32
S512K
512K32B-XG
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512k32n
Abstract: SRAM 35ns
Text: ¥71 ! I • : L | 12 ET -b u . m -ft £ ì ì ■ ■1 à d l >1 1■ ■ 1- \ 4 ■ t r i t u 5Ì Features ■ 4 Low Power CMOS 512K x 8 SRAMs in one MCM ■ Factory configured as 512K x 32; User configurable as 1M x 16 or 2M x 8 ■ Input and Output TTL & CMOS Compatible Design
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IL-STD-883
S512K32-B
512k32n
SRAM 35ns
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WS256K32-XXX
Abstract: ws1m32
Text: WHITE /M ICRO ELECTRO N ICS SRAM MODULES 3.3V • WS128K32V-XXX. 4-2 ■ S512K32B V-XXXE. 4-8
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WS128K32V-XXX.
WS512K32B
S128K48V-XG4WX.
S128K64V-XG4WX.
WS128K8-XCX
25-45ns.
55-120ns.
17-55ns.
WS512K32-XXX
WS256K32-XXX
ws1m32
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Untitled
Abstract: No abstract text available
Text: a S512K32V-XXX WHITE /MICROELECTRONICS 512Kx32 SRAM 3.3V MODULE PRELIMINARY* FEATURES • A ccess Tim es of 70, 8 5 , 1 0 0 , 120ns ■ Packaging ■ Low V oltag e • 3.3V +10% Pow er S upply • 66 -pin, PGA Type, 1.185 inch square, H erm etic ■ C eram ic HIP Package 401
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WS512K32V-XXX
512Kx32
120ns
512Kx32,
1024K
S512K32V-XG
S512K
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Untitled
Abstract: No abstract text available
Text: a S512K32V-XXX WHITE /MICROELECTRONICS 512Kx32 SRAM 3.3V MODULE PRELIMINARY* FEATURES • A c c e s s T i m e s o f 1 5f , 1 7, 2 0 n s ■ Low Power CMOS ■ M IL - S T D - 8 8 3 C o m p l i a n t D e v ic e s A v a i l a b l e ■ TTL C o m p a t ib le In p u ts a nd O u tp u t s
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WS512K32V-XXX
512Kx32
512Kx32
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Untitled
Abstract: No abstract text available
Text: S512K32-XXX Hi-REUÀBiUTY PRODUCT 512Kx32 SRAM MODULE, SMD 5962-94611 FEATURES • Access Tim es of 15*, 17, 20, 25, 35, 45, 55ns 5 Volt Power Supply ■ Packaging Low Power CMOS • 66 pin, PGA Type, 1.075" square, Herm etic Ceram ic HIP Package 400 . B uilt-in Decoupling Caps and M ultiple G round Pins for Low
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WS512K32-XXX
512Kx32
09HYX
10HYX
05HMX
06HMX
07HMX
08HMX
09HMX
10HMX
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Untitled
Abstract: No abstract text available
Text: VZÀ W S5Î2 K 3 2B V -X X X E WHITE / M I C R O E L E C T R O N I C S 512Kx32 3.3V SRAM Module p r e l im in a r y * FEATURES • A ccess Tim es o f 15f, 17, 20ns ■ C om m ercial, Ind u stria l and M ilita ry T e m pe ratu re Ranges ■ M IL-S TD -883 C om p lian t D evices A v a ila b le
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512Kx32
S512K32BV-XG2XE
S512K32NBV-XH
S512K32BV-XG4XE
66-pin,
1Mx16
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