Untitled
Abstract: No abstract text available
Text: SMD EMI PC Beads - SBC Series Packaging Specifications Tape Dimensions Tape Material Carrier tape : Black Conductive Polystyrene – Alloy Carrier tape: Polystyrene Cover type : Black Conductive Polystyrene – Alloy Cover type: Polyethyiene 160m m MIN. Blank Part
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SBC0508F6HT-B-N
SBC1105F16HT-B246-N
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SBCB1104
Abstract: No abstract text available
Text: SMD Data Line EMI Filter – SBCB Series Packaging Specifications Tape Dimensions Tape Material Carrier : Black Conductive Polystyrene – Alloy C arriertape tape: Polystyrene Cover : Black Conductive Polystyrene – Alloy C overtype type: Polyethyiene 160m m M IN .
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SBCB1104
SBCB1104
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FMMTL619
Abstract: FMMTL720 ON895 DSA003705
Text: SOT23 NPN SILICON PLANAR HIGH GAIN MEDIUM POWER TRANSISTOR FMMTL619 ISSUE 1 – NOVEMBER 1997 FEATURES Very low equivalent on-resistance; RCE sat =160mΩ at 1.25A COMPLEMENTARY TYPE – FMMTL720 PARTMARKING DETAIL – L69 E C B ABSOLUTE MAXIMUM RATINGS. PARAMETER
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FMMTL619
FMMTL720
100ms
100us
FMMTL619
FMMTL720
ON895
DSA003705
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PDF
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FMMTL617
Abstract: FMMTL717 A1M10 DSA003705
Text: SOT23 PNP SILICON PLANAR HIGH GAIN MEDIUM POWER TRANSISTOR FMMTL717 ISSUE 1 – DECEMBER 1997 FEATURES Very low equivalent on-resistance; RCE sat =160mΩ at 1.25A COMPLEMENTARY TYPE – FMMTL617 PARTMARKING DETAIL – L77 E C B ABSOLUTE MAXIMUM RATINGS. PARAMETER
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FMMTL717
FMMTL617
100ms
FMMTL617
FMMTL717
A1M10
DSA003705
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PDF
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Untitled
Abstract: No abstract text available
Text: 1/4 Structure Silicon Monolithic Products USB High side switch IC Type Features BD2220G Single channel of low ON resistance Typ = 160mΩ Nch power MOSFET built in 500mA Continuous current load Over current detection （Output off-latch operation） Under voltage lockout (UVLO)
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BD2220G
500mA
R0039A
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PDF
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BD2221G
Abstract: No abstract text available
Text: 1/4 Structure Silicon Monolithic Products USB High side switch IC Type Features BD2221G Single channel of low ON resistance Typ = 160mΩ Nch power MOSFET built in 500mA Continuous current load Over current detection （Output off-latch operation） Under voltage lockout (UVLO)
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BD2221G
500mA
R0039A
BD2221G
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PDF
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Untitled
Abstract: No abstract text available
Text: VN808CM-E LOW THRESHOLD OCTAL HIGH SIDE DRIVER General Features Type RDS on Iout VCC VN808CM-E 160mΩ 0.7A 45V PowerSO-36 • CMOS COMPATIBLE INPUT ■ JUNCTION OVER-TEMPERATURE PROTECTION ■ CASE OVER-TEMPERATURE PROTECTION FOR THERMAL INDEPENDENCE OF THE
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VN808CM-E
PowerSO-36
VN808CM-E
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JESD97
Abstract: VN808CM-E VN808CMTR-E
Text: VN808CM-E Low threshold octal high side driver General features Type RDS on Iout VCC VN808CM-E 160mΩ 0.7A 45V • CMOS compatible input ■ Junction over-temperature protection ■ Case over-temperature protection for thermal independence of the channels
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Original
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VN808CM-E
PowerSO-36
JESD97
VN808CM-E
VN808CMTR-E
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PDF
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SMD Transistor 1020
Abstract: marking l69 FMMTL619
Text: Transistors IC SMD Type Medium Power Transistor FMMTL619 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 0.55 Very low equivalent on-resistance;RCE sat =160mÙ at 1.25A. +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1
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FMMTL619
OT-23
125mA*
200mA,
500mA,
100MHz
SMD Transistor 1020
marking l69
FMMTL619
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SMD TRANSISTOR MARKING 76
Abstract: data ic 25 transistor smd marking 94 smd ic marking 1A FMMTL717 FMMTL718
Text: Transistors IC SMD Type Medium Power Transistor FMMTL717 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 0.55 Very low equivalent on-resistance;RCE sat =160mÙ at 1.25A. +0.1 1.3-0.1 +0.1 2.4-0.1 0.4 3 Features 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1
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FMMTL717
OT-23
-50mA*
-50mA
-10mA,
-100mA,
-50mA,
100MHz
-10mA
SMD TRANSISTOR MARKING 76
data ic 25
transistor smd marking 94
smd ic marking 1A
FMMTL717
FMMTL718
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PDF
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Untitled
Abstract: No abstract text available
Text: Transistors IC SMD Type Product specification FMMTL717 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 0.55 Very low equivalent on-resistance;RCE sat =160mÙ at 1.25A. +0.1 1.3-0.1 +0.1 2.4-0.1 0.4 3 Features 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1
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FMMTL717
OT-23
-50mA*
-10mA,
-100mA,
-50mA,
100MHz
-10mA
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VNQ810-E
Abstract: No abstract text available
Text: VNQ810-E QUAD CHANNEL HIGH SIDE DRIVER Table 1. General Features Type VNQ810-E Figure 1. Package RDS on Iout VCC 160mΩ (*) 3.5A (*) 36V ) s ( ct (*) Per each channel CMOS COMPATIBLE INPUTS • OPEN DRAIN STATUS OUTPUTS ■ ON STATE OPEN LOAD DETECTION ■ OFF STATE OPEN LOAD DETECTION
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VNQ810-E
2002/95/EC
VNQ810-E
VND810-E
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Untitled
Abstract: No abstract text available
Text: VNQ810P-E Quad channel high-side driver Features Type RDS on IOUT VCC VNQ810P-E 160mΩ(1) 3.5A(1) 36V 1. Per each channel. • ECOPACK : lead free and RoHS compliant ■ Automotive Grade: compliance with AEC guidelines ■ Very low standby current ■ CMOS compatible input
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VNQ810P-E
SO-28
VNQ810P-E
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Untitled
Abstract: No abstract text available
Text: VNQ810 Quad channel high side driver Features Type RDS on IOUT VCC VNQ810 160mΩ(1) 3.5A(1) 36V 1. Per each channel. • CMOS compatible inputs ■ Open Drain status outputs ■ On state open load detection ■ Off state open load detection ■ Shorted load protection
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VNQ810
SO-28
VNQ810
VND810
VNQ830
DocID7387
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npn 10 a 50 v to-3 germanium
Abstract: TO10 package germanium transistors NPN AD163 2N1041 AUY26 npn 10 a 50 v germanium 2n1040 germanium 2SB449
Text: POWER GERMANIUM TRANSISTORS Item Number «C Part Number Manufacturer Type Max V BR CEO (A) (V) Po Max h re fT ICBO Max k)N Max ON) Min (HZ) (A) (s) r (CE)ut T Oper Max (Ohms) Max (°C) 250m 250m 230m 160m 470m 500m 250m 250m 250m 750m 10 10 10 750m 10 10 10
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2N2554
2N2558
2N1756
2N1760
2N3160
2N3156
2N1039
2N2555
2N2559
CK258
npn 10 a 50 v to-3 germanium
TO10 package
germanium transistors NPN
AD163
2N1041
AUY26
npn 10 a 50 v germanium
2n1040
germanium
2SB449
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PDF
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Untitled
Abstract: No abstract text available
Text: VNQ810 Quad channel high side driver Features Type RDS on IOUT VCC VNQ810 160mΩ(1) 3.5A(1) 36V ) s ( ct 1. Per each channel. u d o SO-28 (double island) • CMOS compatible inputs ■ Open Drain status outputs ■ On state open load detection ■ Off state open load detection
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VNQ810
SO-28
VNQ810
VND810
DocID7387
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PDF
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Untitled
Abstract: No abstract text available
Text: VND810 Double channel high-side driver Features Type RDS on IOUT VCC VND810 160mΩ(1) 3.5A(1) 36V ) s ( ct 1. Per each channel. u d o SO-16 • CMOS compatible inputs ■ Open Drain status outputs ■ On-state open load detection Description ■ Off-state open load detection
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VND810
VND810
SO-16
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470UH
Abstract: 310M CDH113 CDH115 CDH73 CDH74
Text: < POWER INDUCTORS SMD Type CDH73 > DIMENSIONS mm LAND PATTERNS (mm) CONSTRUCTION 外形寸法図 推奨ランド寸法 磁気構造図 2.4 2.0 3.3MAX. 0.2 8.4 5.8 7.6 8.0MAX. 5.4 1.5 7.3MAX. Solder Resist Outline ( 10µH - 220µH ) * In order to prevent short-circuiingt, a solder resist is recommended.
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CDH73
CDH74
CDH113
CDH113
CDH115
470UH
310M
CDH73
CDH74
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PDF
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Untitled
Abstract: No abstract text available
Text: POWER INDUCTORS < Pin Type > ø8 series RCH-855 DIMENSIONS mm Max. 5.5 5.0 5.0 ø0.7 Max. ø8.3 CONSTRUCTION ( 2.5µH - 10mH ) RCH-875 DIMENSIONS (mm) Max. 7.5 5.0 5.0 ø0.7 Max. ø8.3 CONSTRUCTION ( 2.2µH - 10mH ) RCH-895 DIMENSIONS (mm) Max. 9.5 5.0 5.0
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RCH-855
RCH-875
RCH-895
RCH8011
RCR-875D
RCH-855,
RCH-875,
RCH-895,
RCH8011,
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PDF
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PT9847
Abstract: ESM752A ESM952 sm2160 ESM952A PT9785 esm752 idd1313
Text: POWER SILICON TRANSISTORS Item Number Part Number Manufacturer Type Ic Max A V(BR)CEO on PD Max hFE fT ON) Min (HZ) Max toN Max (A) (s) 'CBO r (CE)sat Toper Max (Ohms) Max (°C) Package Style ~ Devices 20 Watts or More, (Cont'd) 5 10 PT8854 PT8854A S G S F 6 6 2 (A)
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PT8854
PT8854A
SGSF663
ESM752
ESM952
ESM752A
ESM952A
BDY57A
BDY58R
PT9847
sm2160
PT9785
idd1313
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PDF
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Untitled
Abstract: No abstract text available
Text: Non-Shielded PIN Type RCH-664 DIMENSIONS mm WIRE 外形寸法図 4.0 4.0 Max. 6.5 ø0.5 øMax. 6.5 線種 CONSTRUCTION 磁気構造図 ( 1.0µH - 1.0mH ) RCH-855 DIMENSIONS (mm) WIRE 外形寸法図 Max. 5.5 5.0 ø0.7 øMax. 8.3 線種 5.0 CONSTRUCTION 磁気構造図
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RCH-664
RCH-855
RCH-875
RCH-664,
RCH-855,
RCH-664NP
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PDF
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Untitled
Abstract: No abstract text available
Text: TOSHIBA TC74ACT175 Quad D-Type Flip Flop with Clear Features: High Speed: fmax = 160M H z typ. at Vco = 5V • Low Power Dissipation: lcc = 8|iA (max.) at Ta = • Compatible with TTL Outputs: V IL =0.8V (max.); • 25°C V IH = 2V (min.) • Symmetrical Output Impedance: ll0Hl =
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TC74ACT175
TC74A
CT175
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PDF
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transistor A495
Abstract: r107c K5010 BF187 A495 2N3633 2SC622 BC131 BFS29P J BF214
Text: SY M B O L S & C O D ES E X P L A IN E D IN T Y P E No. CROSS-INDEX & TE C H N IC A L SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. This manufacturer-identifying symbol (assigned by D .A .T.A .) is an integral part of the type number (in Type No. Cross Index,
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OCR Scan
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BC131
FK914Ã
FK3014Ã
300M5
300M5A
300MSA
FV914T
FV3014t
SE5040
transistor A495
r107c
K5010
BF187
A495
2N3633
2SC622
BFS29P
J BF214
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PDF
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transistor A495
Abstract: 2SC622 f4 f 150s 2n3131 2SC804 MM1758 2SC621A TMT697 2SC740 NPC187
Text: SY M B O L S & C O D ES E X P L A IN E D IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,
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OCR Scan
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T0106
TE3904
2N914A
2N2272
300M5A
2SC100
10B705
300MA
transistor A495
2SC622
f4 f 150s
2n3131
2SC804
MM1758
2SC621A
TMT697
2SC740
NPC187
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