SSH70N10A
Abstract: MJ70a
Text: SSH70N10A Advanced Power MOSFET FEATURES BVDSS = 100 V Avalanche Rugged Technology RDS on = 0.023 Ω Rugged Gate Oxide Technology Lower Input Capacitance ID = 70 A Improved Gate Charge Extended Safe Operating Area TO-3P Ο 175 C Operating Temperature Lower Leakage Current : 10 µ A (Max.) @ VDS = 100V
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SSH70N10A
SSH70N10A
MJ70a
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Untitled
Abstract: No abstract text available
Text: AOT13N50/AOTF13N50 500V, 13A N-Channel MOSFET General Description Product Summary The AOT13N50 & AOTF13N50 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.
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AOT13N50/AOTF13N50
AOT13N50
AOTF13N50
AOT13N50L
AOTF13N50L
O-220
O-220F
AOTF13N50
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Untitled
Abstract: No abstract text available
Text: AOT12N50/AOB12N50/AOTF12N50 500V, 12A N-Channel MOSFET General Description Product Summary The AOT12N50 & AOB12N50 & AOTF12N50 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC
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AOT12N50/AOB12N50/AOTF12N50
AOT12N50
AOB12N50
AOTF12N50
AOT12N50L
AOTF12N50L
AOB12N50L
O-220
O-263
O-220F
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500V12A
Abstract: No abstract text available
Text: AOW12N50/AOWF12N50 500V, 12A N-Channel MOSFET General Description Product Summary The AOW12N50 & AOWF12N50 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.By providing
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AOW12N50/AOWF12N50
AOW12N50
AOWF12N50
O-262
O-262F
500V12A
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Untitled
Abstract: No abstract text available
Text: AOT12N50/AOB12N50/AOTF12N50 500V, 12A N-Channel MOSFET General Description Product Summary The AOT12N50 & AOB12N50 & AOTF12N50 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC
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AOT12N50/AOB12N50/AOTF12N50
AOT12N50
AOB12N50
AOTF12N50
AOT12N50L
AOTF12N50L
AOB12N50L
O-220
O-263
O-220F
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AOTF12N50L
Abstract: AOTF12N50 AOT12N50
Text: AOT12N50/AOTF12N50 500V, 12A N-Channel MOSFET General Description Product Summary The AOT12N50 & AOTF12N50 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.
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Original
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AOT12N50/AOTF12N50
AOT12N50
AOTF12N50
AOT12N50L
AOTF12N50L
O-220
O-220F
AOTF12N50L
AOT12N50
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Untitled
Abstract: No abstract text available
Text: AOT13N50/AOTF13N50 500V, 13A N-Channel MOSFET General Description Product Summary The AOT13N50 & AOTF13N50 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.
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AOT13N50/AOTF13N50
AOT13N50
AOTF13N50
AOT13N50L
AOTF13N50L
O-220
O-220F
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PDF
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aotf12n50
Abstract: No abstract text available
Text: AOT12N50/AOB12N50/AOTF12N50 500V, 12A N-Channel MOSFET General Description Product Summary The AOT12N50 & AOB12N50 & AOTF12N50 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC
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AOT12N50/AOB12N50/AOTF12N50
AOT12N50
AOB12N50
AOTF12N50
AOT12N50L
AOTF12N50L
AOB12N50L
O-220
O-220F
O-263
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AOT13N50
Abstract: AOTF13N50
Text: AOT13N50/AOTF13N50 500V, 13A N-Channel MOSFET General Description Product Summary The AOT13N50 & AOTF13N50 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.
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Original
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AOT13N50/AOTF13N50
AOT13N50
AOTF13N50
O-220
O-220F
AOT13N50
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PDF
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AOTF12N50
Abstract: AOT12N50 AOTF10N60
Text: AOT12N50 / AOTF12N50 500V, 12A N-Channel MOSFET General Description Features The AOT12N50 & AOTF12N50 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.
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Original
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AOT12N50
AOTF12N50
AOT12N50
AOTF12N50
O-220
O-220F
AOTF10N60
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PDF
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AOTF12N50
Abstract: AOT12N50
Text: AOT12N50/AOTF12N50 500V, 12A N-Channel MOSFET General Description Product Summary The AOT12N50 & AOTF12N50 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.
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Original
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AOT12N50/AOTF12N50
AOT12N50
AOTF12N50
O-220
O-220F
AOT12N50
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PDF
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AOTF12N50L
Abstract: AOB12N50L AOT12N50L
Text: AOT12N50/AOB12N50/AOTF12N50 500V, 12A N-Channel MOSFET General Description Product Summary The AOT12N50 & AOB12N50 & AOTF12N50 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC
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Original
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AOT12N50/AOB12N50/AOTF12N50
AOT12N50
AOB12N50
AOTF12N50
AOT12N50L
AOTF12N50L
AOB12N50L
O-220
O-220F
O-263
AOTF12N50L
AOB12N50L
AOT12N50L
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Untitled
Abstract: No abstract text available
Text: AOW12N50/AOWF12N50 500V, 12A N-Channel MOSFET General Description Product Summary The AOW12N50 & AOWF12N50 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.By providing
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Original
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AOW12N50/AOWF12N50
AOW12N50
AOWF12N50
O-262
O-262F
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PDF
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Untitled
Abstract: No abstract text available
Text: AOT13N50/AOTF13N50 500V, 13A N-Channel MOSFET General Description Product Summary The AOT13N50 & AOTF13N50 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.
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Original
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AOT13N50/AOTF13N50
AOT13N50
AOTF13N50
AOT13N50L
AOTF13N50L
AOTF13N50
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PDF
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Untitled
Abstract: No abstract text available
Text: SSH70N10A Advanced Power MOSFET FEATURES BVDSS = 100 V Avalanche Rugged Technology RDS on = 0.023 Ω Rugged Gate Oxide Technology Lower Input Capacitance ID = 70 A Improved Gate Charge Extended Safe Operating Area TO-3P Ο 175 C Operating Temperature Lower Leakage Current : 10 µ A (Max.) @ VDS = 100V
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SSH70N10A
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907 TRANSISTOR smd
Abstract: F75299 10d471 SC053
Text: ACT520 QC 1.5A Application Report High Performance QR Mode 18W Quick Changer Using ACT520 FEATURES • • Quasi-Resonant PWM Controller Accurate CC with line and inductance compensation No-load Standby Power < 30mW Excellent Efficiency >80% with Low Cost 4N65 MOSFET
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ACT520
ACT520
230VAC,
Load50
907 TRANSISTOR smd
F75299
10d471
SC053
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Untitled
Abstract: No abstract text available
Text: DMP3035SFG 30V P-CHANNEL ENHANCEMENT MODE MOSFET POWERDI V BR DSS Features and Benefits • Low RDS(ON) – ensures on state losses are minimized • Small form factor thermally efficient package enables higher density end products -9.5 A • Occupies just 33% of the board area occupied by SO-8 enabling
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DMP3035SFG
AEC-Q101
DS35440
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Untitled
Abstract: No abstract text available
Text: DMP3035SFG 30V P-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Features and Benefits V BR DSS • Low RDS(ON) – ensures on state losses are minimized • Small form factor thermally efficient package enables higher density end products -9.5 A • Occupies just 33% of the board area occupied by SO-8 enabling
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DMP3035SFG
AEC-Q101
DS35440
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Untitled
Abstract: No abstract text available
Text: DMP3035SFG 30V P-CHANNEL ENHANCEMENT MODE MOSFET POWERDI V BR DSS Features and Benefits • Low RDS(ON) – ensures on state losses are minimized • Small form factor thermally efficient package enables higher density end products -9.5 A • Occupies just 33% of the board area occupied by SO-8 enabling
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DMP3035SFG
AEC-Q101
DS35440
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"rca application note"
Abstract: 36254 RFH30N12 RFH30N15
Text: Standard Power MOSFETs RFH30N12, RFH30N15 File N u m be r 1633 Power MOS Field-Effect Transistors N-Channel Enhancement-Mode Power Field-Effect Transistors TERMINAL DIAGRAM 30 A, 120 V - 150 V festoni = 0.075 Q Features: • ■ ■ ■ ■ ■ SOA is power-dissipation lim ited
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OCR Scan
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RFH30N12,
RFH30N15
92CS-3374I
RFH30N12
RFH30N15*
h2CS-36252
AN-7254
AN-7260.
9SCS-36254
92CS-3625J
"rca application note"
36254
RFH30N15
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RFK30N12
Abstract: C039 18198 RFH30N12 RFH30N15 Scans-00121260
Text: 3 8 7 5 0 8 T gT E ~ S O L Í D Standard Power MOSFETs 3 ñ 7 5 D ñ i DI G E S O LI » STATE STATE 0 1E o a i a n 3 18193 a D iT - ^ - '/S ’ _ RFH30N12, RFH30N15 File N u m b e r 1633 Power MOS Field-Effect Transistors N-Channel Enhancement-Mode
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OCR Scan
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RFH30N12,
RFH30N15
9ZCS-53741
RFH30N12
RFH30N15*
JCS-176S7
RFK30N12,
RFK30N15
92CS-36Z32
92CS-362S3
RFK30N12
C039
18198
RFH30N15
Scans-00121260
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ssh70n10a
Abstract: No abstract text available
Text: SSH70N10A Advanced Power MOSFET FEATURES • Avalanche Rugged Technology ■ Rugged Gale Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ 175t: Operating Temperature ■ ■ BVdss * 100 V ^DS on “
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OCR Scan
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SSH70N10A
ssh70n10a
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A2757
Abstract: pj 66 diode SSH70N10A 1633 MOSFET
Text: A d van ced Power MOSFET S S H 7 0 N 1 0 A FEATURES = 100 V b v dss • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ^DS on = ■ Lower Input Capacitance lD = 70 A ■ Improved Gate Charge ■ Extended Safe Operating Area ■ 175°C Operating Temperature
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OCR Scan
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SSH70N10A
0QMD315
O-220-F-4L
DD3b33E
003b333
A2757
pj 66 diode
SSH70N10A
1633 MOSFET
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SSH70N10A
Abstract: No abstract text available
Text: Advanced SSH70N10A P o w e r MOSFET FEATURES bv • A valan che R ugged T ech n o lo g y ■ R ugged G ate O xide T e ch n o lo g y ■ Lo w e r Input C a pa citance ■ Im proved G ate C harge ■ E xtended S afe O pe ra ting A rea RDS on = 0.023 a lD = 70 A
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OCR Scan
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SSH70N10A
SSH70N10A
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PDF
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