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    16C1B Search Results

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    Gems Sensors & Controls 16C1B0

    Series 16 Open Circuit Board Control |Gems Sensors 16C1B0
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    Newark 16C1B0 Bulk 1
    • 1 $263.72
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    Warrick 16C1B0

    Controller; Warrick; 1NO & 1NC; Direct 26K; 120 VAC; 1/8" Panel | Warrick (Gems Sensors) 16C1B0
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    RS 16C1B0 Bulk 1 4 Weeks 1
    • 1 $243.12
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    Vishay Intertechnologies 199D156X9016C1B1E3

    Tantalum Capacitor, 15 uF, 16 V, � 10%, 2.54 mm, -55 �C, 125 �C, Radial Leaded (Alt: 199D156X9016C1B1E3)
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    Avnet Abacus 199D156X9016C1B1E3 10 Weeks 1,000
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    C&K MP01016C1BE

    Pushbutton Switches
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    Sager MP01016C1BE
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    16C1B Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    K4115 toshiba

    Abstract: TRANSISTOR K4115 k4115 2SK4115 K4115 toshiba transistor DSAE002454 toshiba k4115 2SK4115* equivalent k411 SC-65
    Text: 2SK4115 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π- MOSⅣ 2SK4115 Switching Regulator Applications Unit: mm Absolute Maximum Ratings (Ta = 25°C) 20.0±0.3 Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) 2.0 • 9.0 High forward transfer admittance: ⎪Yfs⎪ = 5.0 S (typ.)


    Original     		PDF 2SK4115 K4115 toshiba TRANSISTOR K4115 k4115 2SK4115 K4115 toshiba transistor DSAE002454 toshiba k4115 2SK4115* equivalent k411 SC-65

    K2613

    Abstract: toshiba k2613 2SK2613
    Text: 2SK2613 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSIII 2SK2613 Switching Regulator Applications, DC-DC Converter and Motor Drive Applications • Low drain-source ON resistance: RDS (ON) = 1.4 Ω (typ.) • High forward transfer admittance: ⎪Yfs⎪ = 6.0 S (typ.)


    Original     		PDF 2SK2613 910lled K2613 toshiba k2613 2SK2613

    toshiba k2613

    Abstract: K2613 K2613 TOSHIBA 2SK2613
    Text: 2SK2613 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSIII 2SK2613 Switching Regulator Applications, DC-DC Converter and Motor Drive Applications • Low drain-source ON resistance: RDS (ON) = 1.4 Ω (typ.) • High forward transfer admittance: ⎪Yfs⎪ = 6.0 S (typ.)


    Original     		PDF 2SK2613 toshiba k2613 K2613 K2613 TOSHIBA 2SK2613

    toshiba k2613

    Abstract: 2SK2613 K2613
    Text: 2SK2613 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSIII 2SK2613 Switching Regulator Applications, DC-DC Converter and Motor Drive Applications • Unit: mm Low drain-source ON-resistance: RDS (ON) = 1.4 Ω (typ.) • High forward transfer admittance: ⎪Yfs⎪ = 6.0 S (typ.)


    Original     		PDF 2SK2613 910lled toshiba k2613 2SK2613 K2613

    Untitled

    Abstract: No abstract text available
    Text: 2SK2613 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSIII 2SK2613 Switching Regulator Applications, DC-DC Converter and Motor Drive Applications • Low drain-source ON-resistance: RDS (ON) = 1.4 Unit: mm (typ.) • High forward transfer admittance: ⎪Yfs⎪ = 6.0 S (typ.)


    Original     		PDF 2SK2613

    Untitled

    Abstract: No abstract text available
    Text: 2SK3905 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOSVI 2SK3905 Switching Regulator Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 0.25 Ω (typ.) • High forward transfer admittance: ⎪Yfs⎪ = 8.2 S (typ.) •


    Original     		PDF 2SK3905

    toshiba k2613

    Abstract: K2613
    Text: 2SK2613 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSIII 2SK2613 Switching Regulator Applications, DC-DC Converter and Motor Drive Applications • Low drain-source ON resistance: RDS (ON) = 1.4 Ω (typ.) • High forward transfer admittance: ⎪Yfs⎪ = 6.0 S (typ.)


    Original     		PDF 2SK2613 toshiba k2613 K2613

    Untitled

    Abstract: No abstract text available
    Text: 2SK3904 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOSVI 2SK3904 Switching Regulator Applications • Unit: mm Low drain-source ON resistance: RDS (ON) = 0.2 Ω (typ.) • High forward transfer admittance: ⎪Yfs⎪ = 9.5 S (typ.) •


    Original     		PDF 2SK3904

    K3903

    Abstract: 2SK3903 SC-65 2SK3903(F)
    Text: 2SK3903 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOSVI 2SK3903 Switching Regulator Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 0.32 Ω (typ.) • High forward transfer admittance: ⎪Yfs⎪ = 7.5 S (typ.) •


    Original     		PDF 2SK3903 K3903 2SK3903 SC-65 2SK3903(F)

    k3878

    Abstract: transistor Toshiba K3878 toshiba k3878 2SK3878 transistor k3878 APPLICATION NOTE K3878 2SK3878 equivalent k3878 toshiba K387 SC-65
    Text: 2SK3878 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π- MOSIV 2SK3878 Switching Regulator Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 1.0 Ω (typ.) • High forward transfer admittance: ⎪Yfs⎪ = 7.0 S (typ.) •


    Original     		PDF 2SK3878 k3878 transistor Toshiba K3878 toshiba k3878 2SK3878 transistor k3878 APPLICATION NOTE K3878 2SK3878 equivalent k3878 toshiba K387 SC-65

    2SK2613

    Abstract: k2613 toshiba k2613 K2613 TOSHIBA K261
    Text: 2SK2613 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSIII 2SK2613 Switching Regulator Applications, DC-DC Converter and Motor Drive Applications • Low drain-source ON resistance: RDS (ON) = 1.4 Ω (typ.) • High forward transfer admittance: ⎪Yfs⎪ = 6.0 S (typ.)


    Original     		PDF 2SK2613 2SK2613 k2613 toshiba k2613 K2613 TOSHIBA K261

    2SK3905

    Abstract: SC-65 K3905
    Text: 2SK3905 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOSVI 2SK3905 Switching Regulator Applications • Unit: mm Low drain-source ON resistance: RDS (ON) = 0.25 Ω (typ.) • High forward transfer admittance: ⎪Yfs⎪ = 8.2 S (typ.) •


    Original     		PDF 2SK3905 2SK3905 SC-65 K3905

    K2313

    Abstract: 2SK2313 jeita sc-65 2SK2313F
    Text: 2SK2313 東芝電界効果トランジスタ 2 シリコンNチャネルMOS形 L −π−MOSⅤ 2SK2313 ○ リレー駆動DC−DC コンバータ用 ○ モータドライブ用 単位: mm z 4V 駆動です。 : RDS (ON) = 8mΩ (標準) z オン抵抗が低い。


    Original     		PDF 2SK2313 10VID SC-65 2-16C1B K2313 2002/95/EC) K2313 2SK2313 jeita sc-65 2SK2313F

    K2398

    Abstract: jeita sc-65 2SK2398
    Text: 2SK2398 東芝電界効果トランジスタ シリコンNチャネルMOS形 π−MOSⅤ 2SK2398 ○ スイッチングレギュレータDC−DC コンバータ用 ○ モータドライブ用 単位: mm : RDS (ON) = 22mΩ (標準) z オン抵抗が低い。


    Original     		PDF 2SK2398 10VID SC-65 2-16C1B K2398 2002/95/EC) K2398 jeita sc-65 2SK2398

    k3904

    Abstract: 2SK3904 SC-65
    Text: 2SK3904 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOSVI 2SK3904 Switching Regulator Applications • Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.2 Ω (typ.) • High forward transfer admittance: ⎪Yfs⎪ = 9.5 S (typ.) •


    Original     		PDF 2SK3904 k3904 2SK3904 SC-65

    K4115 toshiba

    Abstract: TRANSISTOR K4115 k4115 toshiba k4115 K4115 toshiba transistor 2SK4115 TRANSISTOR 2SK4115 2SK4115* equivalent k411 SC-65
    Text: 2SK4115 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π- MOSⅣ 2SK4115 Switching Regulator Applications • Enhancement model: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) 1.0 ＋0.3 Rating Unit 1.0 －0.25 Drain-source voltage VDSS 900 V 5.45±0.2


    Original     		PDF 2SK4115 K4115 toshiba TRANSISTOR K4115 k4115 toshiba k4115 K4115 toshiba transistor 2SK4115 TRANSISTOR 2SK4115 2SK4115* equivalent k411 SC-65

    k3878

    Abstract: transistor Toshiba K3878 APPLICATION NOTE K3878 toshiba k3878 2SK3878 k3878 toshiba 2SK3878 equivalent transistor k3878 SC-65 K3878 transistor
    Text: 2SK3878 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π- MOSIV 2SK3878 Switching Regulator Applications • Unit: mm Low drain-source ON-resistance: RDS (ON) = 1.0 Ω (typ.) • High forward transfer admittance: ⎪Yfs⎪ = 7.0 S (typ.) •


    Original     		PDF 2SK3878 k3878 transistor Toshiba K3878 APPLICATION NOTE K3878 toshiba k3878 2SK3878 k3878 toshiba 2SK3878 equivalent transistor k3878 SC-65 K3878 transistor

    K4115 toshiba

    Abstract: TRANSISTOR K4115 k4115 2SK4115 TRANSISTOR 2SK4115 K4115 toshiba transistor k411 SC-65
    Text: 2SK4115 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π- MOSⅣ 2SK4115 Switching Regulator Applications Unit: mm Absolute Maximum Ratings (Ta = 25°C) 20.0±0.3 Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) 2.0 • 9.0 High forward transfer admittance: ⎪Yfs⎪ = 5.0 S (typ.)


    Original     		PDF 2SK4115 K4115 toshiba TRANSISTOR K4115 k4115 2SK4115 TRANSISTOR 2SK4115 K4115 toshiba transistor k411 SC-65

    3p transistor

    Abstract: 2-16C1B
    Text: Transistor Outline Package New Type TO–3P (N) Package Outline Dimensions Outline Dimensions Unit: mm 1.8 max 15.9 max 3.3 max 2.0 ±0.3 1.0 +0.3 –0.25 5.45 ±0.2 20.5 ±0.5 9.0 2.0 20.0 ±0.3 4.5 φ3.2 ±0.2 3 4.8 max 2 2.8 1 (Bottom view) 0.6 +0.3 –0.1


    Original     		PDF 16D1A 16C1A 16C1B 16C1C 3p transistor 2-16C1B

    Untitled

    Abstract: No abstract text available
    Text: 1 1111111111111 111111 1 1111111111111 1 1111111111111 1 1111111111111 1 1 A1234567898AAABCDCEFCAFB A AAA AAAAAAAAAAA AA AAAAA A AAAAAAAA A A CA3E AAA AA1EEAFBAFB3CBAAECACA6 AFE CD!A"E#A CCCA988$


    Original     		PDF 234567898A 6789812345678194A1B4CD1AEF1D4178589421A6D 6B34B4 D3499831A6D BF1C497836 4E3716C178C6 871D41 1C41F4 31234D4DF28C18ECF1E 71D34

    2SK3905

    Abstract: SC-65 K3905
    Text: 2SK3905 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOSVI 2SK3905 Switching Regulator Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 0.25 Ω (typ.) • High forward transfer admittance: ⎪Yfs⎪ = 8.2 S (typ.) •


    Original     		PDF 2SK3905 2SK3905 SC-65 K3905

    K2173

    Abstract: 2SK2173 jeita sc-65 25A1317
    Text: 2SK2173 東芝電界効果トランジスタ 2 シリコンNチャネルMOS形 L −π−MOSⅤ 2SK2173 ○ リレー駆動DC−DC コンバータ用 ○ モータドライブ用 単位: mm z 4V 駆動です。 : RDS (ON) = 13mΩ(標準) z オン抵抗が低い。


    Original     		PDF 2SK2173 10VID SC-65 2-16C1B K2173 2002/95/EC) K2173 2SK2173 jeita sc-65 25A1317

    2-16c1b

    Abstract: S16C SC-65
    Text: 2-16C1B Uniti rin 03. 2±0. 2 5, 45*0, 2 5, 45±0, 2 SO o Nane TD -3 P C N JEDEC - E I AJ Toshiba Discrete SC -6 5 2 -16 C 1B Circuit - ^ i- 1 • NiiQinNcnr Integrated Aug.2000


    OCR Scan     		PDF S-16C1B SC-65 2-16C1B 2000S-16C1B 2-16c1b S16C

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 16C1BEG-80L TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 16,777,216-WORD BY 72-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The 16C1BEG is a 16,777,216-word by 72-bit synchronous dynamic RAM module consisting of 18 TC59S6408BFT DRAMs and an unbuffer on a printed circuit board.


    OCR Scan     		PDF THMY7216C1BEG-80L 216-WORD 72-BIT THMY7216C1BEG TC59S6408BFT 72-bit