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    2SK2398 Search Results

    2SK2398 Datasheets (6)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SK2398 Toshiba Power MOSFET Selection Guide with Cross Reference Data Original PDF
    2SK2398 Toshiba Original PDF
    2SK2398 Toshiba Power MOSFETs Cross Reference Guide Original PDF
    2SK2398 Toshiba N-Channel MOSFET Original PDF
    2SK2398 Toshiba Field Effect Transistor Silicon N Channel MOS Type Scan PDF
    2SK2398 Toshiba Silicon N channel field effect transistor for high speed, high current switching applications, DC-DC converter and motor drive applications Scan PDF

    2SK2398 Datasheets Context Search

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    2SK2398

    Abstract: No abstract text available
    Text: 2SK2398 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV 2SK2398 DC−DC Converter and Motor Drive Applications Low drain−source ON resistance : RDS (ON) = 22 mΩ (typ.) High forward transfer admittance : |Yfs| = 27 S (typ.) Unit: mm


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    PDF 2SK2398 2SK2398

    K2398

    Abstract: jeita sc-65 2SK2398
    Text: 2SK2398 東芝電界効果トランジスタ シリコンNチャネルMOS形 π−MOSⅤ 2SK2398 ○ スイッチングレギュレータDC−DC コンバータ用 ○ モータドライブ用 単位: mm : RDS (ON) = 22mΩ (標準) z オン抵抗が低い。


    Original
    PDF 2SK2398 10VID SC-65 2-16C1B K2398 2002/95/EC) K2398 jeita sc-65 2SK2398

    2SK2398

    Abstract: No abstract text available
    Text: 2SK2398 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV 2SK2398 DC−DC Converter and Motor Drive Applications z Low drain−source ON resistance : RDS (ON) = 22 mΩ (typ.) z High forward transfer admittance : |Yfs| = 27 S (typ.) Unit: mm


    Original
    PDF 2SK2398 2SK2398

    2SK2398

    Abstract: SC-65
    Text: 2SK2398 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV 2SK2398 DC−DC Converter and Motor Drive Applications z Low drain−source ON-resistance : RDS (ON) = 22 mΩ (typ.) z High forward transfer admittance : |Yfs| = 27 S (typ.) Unit: mm


    Original
    PDF 2SK2398 2SK2398 SC-65

    K2398

    Abstract: 2SK2398
    Text: 2SK2398 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV 2SK2398 DC−DC Converter and Motor Drive Applications z Low drain−source ON resistance : RDS (ON) = 22 mΩ (typ.) z High forward transfer admittance : |Yfs| = 27 S (typ.) Unit: mm


    Original
    PDF 2SK2398 K2398 2SK2398

    k2398

    Abstract: 2SK2398
    Text: 2SK2398 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV 2SK2398 DC−DC Converter and Motor Drive Applications l Low drain−source ON resistance : RDS (ON) = 22 mΩ (typ.) l High forward transfer admittance : |Yfs| = 27 S (typ.) Unit: mm


    Original
    PDF 2SK2398 k2398 2SK2398

    Untitled

    Abstract: No abstract text available
    Text: 2SK2398 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV 2SK2398 DC−DC Converter and Motor Drive Applications z Low drain−source ON resistance : RDS (ON) = 22 mΩ (typ.) z High forward transfer admittance : |Yfs| = 27 S (typ.) Unit: mm


    Original
    PDF 2SK2398

    2SK2398

    Abstract: No abstract text available
    Text: 2SK2398 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV 2SK2398 DC−DC Converter and Motor Drive Applications Low drain−source ON resistance : RDS (ON) = 22 mΩ (typ.) High forward transfer admittance : |Yfs| = 27 S (typ.) Unit: mm


    Original
    PDF 2SK2398 2SK2398

    5252 F 1009 4-pin

    Abstract: TPC 8028 MARKING S3H SOT363 TK8A50D equivalent tk6a65d equivalent 2SK4112 TPCA8030-H toshiba laptop charging CIRCUIT diagram TK80A08K3 TPCA*8025
    Text: 2009-5 PRODUCT GUIDE MOSFETs SEMICONDUCTOR http://www.semicon.toshiba.co.jp/eng C O N T E N T S 1 Features and Structures . 3 2 Toshiba’s MOSFET Product Lines and Part Numbering Schemes . 4


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    PDF

    2SK2056

    Abstract: 2SK1603 2sk1603 datasheet TOSHIBA "ULTRA HIGH SPEED" DIODE 1A transistor 2SK1603 2SK3561 equivalent 2SK2915 EQUIVALENT 1045y 2SK3569 equivalent 2SK1078
    Text: O W Y.C M.T .1 O W C W 2005-3 WW .100Y. M.T O W WW .100Y.C M.TW .TW M WW 00Y.CO .TW .CO .TW Y W M .1 W.1 Y.COM W WW 00Y.CO .TW W W W .T 00 W.1 Y.COM W W.1 Y.COM W W W W .T W 00 W M.T .100 W.1 Y.COM W M.T O W O W C . .C W WW .100Y .TW M.T .100 .TW 00Y M O 1


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    PDF BCE0017B 2SK2056 2SK1603 2sk1603 datasheet TOSHIBA "ULTRA HIGH SPEED" DIODE 1A transistor 2SK1603 2SK3561 equivalent 2SK2915 EQUIVALENT 1045y 2SK3569 equivalent 2SK1078

    2SK3567 equivalent

    Abstract: 2SK3569 equivalent TPCA*8023 TK8A50D equivalent 2SK2056 2SK3878 equivalent tpca8023 2SK941 equivalent 2SK3561 equivalent 2SK1603
    Text: 2008-9 PRODUCT GUIDE Power MOSFETs s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g Toshiba’s power MOSFET devices meet the needs of a wide range of ultra-high-density applications. 1.Features and Structure. 2


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    PDF BCE0017F E-28831 BCE0017G 2SK3567 equivalent 2SK3569 equivalent TPCA*8023 TK8A50D equivalent 2SK2056 2SK3878 equivalent tpca8023 2SK941 equivalent 2SK3561 equivalent 2SK1603

    2SK3878 equivalent

    Abstract: 2sk2611 2SK3759 2SK3878 2SK3869 2SK2013 toshiba POWER MOS FET 2sj 2sk 2SK3868 2SK3567 equivalent 2SK2718
    Text: [ 2 ] Selection Guide [ 2 ] Selection Guide [ 2 ] Selection Guide Power MOSFET Product Line-up ID = 0.5~20 A 1. VDSS (V) 12 16 20 30 40 50 60 100 150 180 ◊2SK2963 (0.7) ▲2SK2962 (0.7) ◊2SJ508 (1.9) ▲2SJ509 (1.9) ▲2SK3670 (1.7) ♦2SJ313 (5.0) ▼2SJ338 (5.0)


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    PDF 2SK2963 2SK2962 2SJ508 2SJ509 2SK3670 2SJ313 2SJ338 2SK2013 2SK2162 2SJ360 2SK3878 equivalent 2sk2611 2SK3759 2SK3878 2SK3869 2SK2013 toshiba POWER MOS FET 2sj 2sk 2SK3868 2SK3567 equivalent 2SK2718

    IGBT GT30F124

    Abstract: IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075
    Text: 東芝半導体製品総覧表 2011 年 1 月版 トランジスタ バイポーラ小信号トランジスタ 接合形 FET 異種混載複合デバイス MOSFET バイポーラパワートランジスタ 高周波バイポーラ小信号トランジスタ


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    PDF SCJ0004R SC-43) 2SC1815 2SC732TM 2SC1959 2SA1015 2SC2240 2SA970 2SC1815 2SA1015 IGBT GT30F124 IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075

    2SK4207

    Abstract: to220sis TPCA*8023 tk80A08K3 TPC8119 TK40A08K3 2SK4112 ssm3j16fs 2sk3568 TPC8A03
    Text: 製品カタログ 2009-9 東芝半導体 製品カタログ MOSFET SEMICONDUCTOR h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / C O N T E N T S 1 特長と構造. 3


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    PDF BCJ0082B BCJ0082A 2SK4207 to220sis TPCA*8023 tk80A08K3 TPC8119 TK40A08K3 2SK4112 ssm3j16fs 2sk3568 TPC8A03

    GT30F124

    Abstract: TPCP8R01 GT30J124 JAPANESE 2SC TRANSISTOR 2010 smd transistor h2a smd marking 8L01 tk25e06k3 GT45F122 gt30g124 GT30F123
    Text: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs


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    PDF 2010/9SCE0004K SC-43) 2SC1815 700the GT30F124 TPCP8R01 GT30J124 JAPANESE 2SC TRANSISTOR 2010 smd transistor h2a smd marking 8L01 tk25e06k3 GT45F122 gt30g124 GT30F123

    IRF540 complementary

    Abstract: IRFZ44N complementary std2n52 TOSHIBA IRFZ44A datasheet STP2NA60 SSH6N80 rfp60n06 ste38na50 IRF630 complementary IRF3205 IR
    Text: Sales type RFP6N50 RFD16N03LSM RFP15N05L RFP50N05 RFP15N05 RFP50N05L RFD14N05L RFD14N05LSM RFD14N05SM RFP14N05L RFP25N05 RFP14N05 HUF75344P3 HUF75344S3S HUF75345S3S HUF75345G3 HUF75343S3S HUF75307D3S HUF75344G3 HUF75345P3 HUF75343P3 HUF5343G3 HUF75321P3 HUF75329P3


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    PDF RFP6N50 RFD16N03LSM RFP15N05L RFP50N05 RFP15N05 RFP50N05L RFD14N05L RFD14N05LSM RFD14N05SM RFP14N05L IRF540 complementary IRFZ44N complementary std2n52 TOSHIBA IRFZ44A datasheet STP2NA60 SSH6N80 rfp60n06 ste38na50 IRF630 complementary IRF3205 IR

    transistor bc 245

    Abstract: 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122
    Text: Transistors Bipolar Small-Signal Transistors z 190 Small-Signal FETs z 205 Combination Products of Different Type Devices z 215 Bipolar Power Transistors z 217 Power MOSFETs z 232 Power Transistor Modules z 242 Radio-Frequency Bipolar Small-Signal Transistors z 243


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    PDF SC-43) 2SC1815 TPS615 TPS616 TPS610 transistor bc 245 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122

    2SK2398

    Abstract: SC-65 transistor N100
    Text: TOSHIBA 2SK2398 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-M O SV 2SK2398 HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS INDUSTRIAL APPLICATIONS Unit in mm 1 5.9 M A X. • • • • 03.2 ±0.2


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    PDF 2SK2398 2SK2398 SC-65 transistor N100

    Untitled

    Abstract: No abstract text available
    Text: TO SHIBA 2SK2398 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-M OSV 2SK2398 HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS INDUSTRIAL APPLICATIONS Unit in mm 15.9 MAX. • • • • 0 3 .2 1 0 .2


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    PDF 2SK2398 lAR--45A, J--25

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 2SK2398 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-M O SV 2SK2398 HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS IN D U S T R IA L A P P L IC A T IO N S DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS Low Drain-Source O N Resistance


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    PDF 2SK2398 100/zA 165yuH

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 2SK2398 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-M O SV 2SK2398 HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS INDUSTRIAL APPLICATIONS Unit in mm 1 5.9M A X. • • • • Low Drain-Source ON Resistance : Rd S (ON)= 22mQ (Typ.)


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    PDF 2SK2398

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 2SK2398 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-MOSV 2 S K2 398 HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS Unit in mm DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS 1 5.9MAX. • Low Drain-Souree ON Resistance


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    PDF 2SK2398 100//A 22mfi

    2SK2398

    Abstract: SC-65
    Text: T O S H IB A 2SK2398 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-MOSV 2SK2398 HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS U nit in mm DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS 1 5.9 M A X . • Low Drain-Source ON Resistance


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    PDF 2SK2398 SC-65

    2SK2398

    Abstract: SC-65
    Text: TOSHIBA 2SK2398 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-M OSV 2SK2398 HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS U nit in mm DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS 1 ^ Q MAY • Low Drain-Source ON Resistance


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    PDF 2SK2398 2SK2398 SC-65