Untitled
Abstract: No abstract text available
Text: RF Power Field Effect Transistor LDMOS, 2110—2170 MHz, 2W, 28V 7/9/04 MAPLST2122-002PP Preliminary Features Q Q Q Q Q Package Style Designed for broadband commercial applications up to 2.2GHz High Gain, High Efficiency and High Linearity Ease of Design for Gain and Insertion Phase
|
Original
|
MAPLST2122-002PP
17GHz,
28Vdc
27dBm
-45dBc
11GHz)
PFP-16
|
PDF
|
TRANSISTOR Z4
Abstract: CHIP TRANSISTOR omni spectra capacitor 15 F 50 VDC ATC100A MAPLST0822-002PP RO4350 640457-4 RF transistor gain 20dB
Text: RF Power Field Effect Transistor LDMOS, 800—2200 MHz, 2W, 28V 4/14/05 MAPLST0822-002PP Preliminary Features Package Style Designed for broadband commercial applications up to 2.2GHz High Gain, High Efficiency and High Linearity Ease of Design for Gain and Insertion Phase
|
Original
|
MAPLST0822-002PP
17GHz,
28Vdc
28dBm
-39dBc
11GHz
PFP-16
960MHz,
26Vdc,
960MHz
TRANSISTOR Z4
CHIP TRANSISTOR
omni spectra
capacitor 15 F 50 VDC
ATC100A
MAPLST0822-002PP
RO4350
640457-4
RF transistor gain 20dB
|
PDF
|
Untitled
Abstract: No abstract text available
Text: PRELIMINARY GOLDMOS Field Effect Transistor 125 Watts, 2110-2170 MHz PTF 102093* Description Key Features The PTF 102093 is a 125–watt, GOLDMOS FET intended for WCDMA applications. The device is characterized for single and two carrier WCDMA operation in the 2110 to 2170 MHz band. Full gold metallization ensures excellent device lifetime and reliability.
|
Original
|
1-877-GOLDMOS
1522-PTF
|
PDF
|
6413A
Abstract: scrambling code uplink Scrambling code Racal Instruments node b 6413A Infinite Power Solutions TAG 8706 3/TDA+9650
Text: Commercial in Confidence Testing UMTS Node B’s using the Racal Instruments Wireless Solutions 6413A. Number: AN05/0006 Product: 6413A Issued: 13 April 2005 Version: 1.2 Distribution: All Summary This application note is intended to be a guide to testing a UMTS Node B using 6413A.
|
Original
|
AN05/0006
6413A
scrambling code uplink
Scrambling code
Racal Instruments
node b 6413A
Infinite Power Solutions
TAG 8706
3/TDA+9650
|
PDF
|
ultrarf
Abstract: 30WPEP MRF21060 UGF21060 16DPCH
Text: UGF21060 60W, 2.17 GHz, 28V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET Designed for base station applications in the frequency band 2.11 to 2.17 GHz. Rated with a minimum output power of 60W, it is ideal for CDMA, TDMA, WCDMA, GSM, and Multi-Carrier
|
Original
|
UGF21060
MRF21060
700mA)
ultrarf
30WPEP
MRF21060
UGF21060
16DPCH
|
PDF
|