Contextual Info: UG216W3264HSG T 64M Bytes (16M x 32) 72Pin SIMM based on 16M X 4 DRAM General Description Features The UG216W3264HSG(T) is a 16,777,216 bits by 32 SIMM module. The UG216WE3264HSG(T) is assembled using 8 pcs of 16M x 4 3.3V 4K refresh EDO DRAM in 32 Pin TSOP package and mounted

edo dram 50ns 72-pin simm

Contextual Info: UG216E32T4HSG T 64M Bytes (16M x 32) 72Pin SIMM based on 16M X 4 DRAM w/o Voltage Convertor General Description Features The UG216E32T4HSG(T) is a 16,777,216 bits by 32 SIMM module. The UG216E32T4HSG(T) is assembled using 8 pcs of 16M x 4 3.3V 4K refresh

SL32D4C16M4E-A60V

Abstract: 16MX32
Contextual Info: SL32D4C16M4E-AxxV 16M X 32 Bits DRAM SO-DIMM with Extended Data Out EDO FEATURES GENERAL DESCRIPTION • The SiliconTech SL32D4C16M4E-AxxV is a 16M x 32 bits Dynamic RAM memory module. The SL32D4C16M4E-AxxV consists of eight CMOS 16M x 4 bits DRAMs in 32-pin 400-mil

Contextual Info: UG216E3654HKG T 64M Bytes (16M x 36) DRAM 72Pin SIMM based on 16M X 4 General Description Features The UG216E3654HKG(T) is a 16,777,216 bits by 36 SIMM module.The UG216E3654HKG(T) is assembled using 8 pcs of 16Mx4 4K refresh DRAM in 400mil Package and 4 pcs of 16M x 1

Contextual Info: 168-PIN DIMMS STI7216107D1-60VG 16M X 72 Bit DRAM DIMM with EDO and ECC Optimized FEATURES GENERAL DESCRIPTION • The Simple Technology STI7216107D1-60VG is an 16M x 72 bit Dynamic RAM high density memory module. The module consists of eighteen 16M x 4 bit DRAMs in 400-mil 34-pin

SDRAM

Abstract: 128Mx8 DDR dRAM 512M 8M X 16 SDRAM 8M X 16 X 4 SDRAM SDRAM 128M 8M x 16 512M ISSD16M16STC TSOP SDRAM ISAS512K16LTD
Contextual Info: MPD Parts Directory March 2002 Stack Technology Stack Memory Configuration Stack Part Number TSOP Memory Configuration SRAM (8M) 512K x 16 ISAS512K16LTD (4M) 256K x 16 EDO DRAM (128M) 16M x 8 ISED16M8LTB (64M) 16M x 4 SDRAM SDRAM SDRAM SDRAM SDRAM (512M)

16M 72PIN

Abstract: Unigen UG316W324
Contextual Info: UG316W324 8 4HSG 64M Bytes (16M x 32) DRAM 72Pin SODIMM based on 16M X 4 Features General Description The UG316W324(8)4HSG is a 16,777,216 bits by 32 SODIMM module.The UG316W324(8)4HSG is assembled using 8 pcs of 16M x 4 4K/8K refresh DRAMs in 32-pin TSOP package mounted on a 72pin printed circuit board.

8255 pin diagram

Contextual Info: UG316E324 8 4HSG 64M Bytes (16M x 32) DRAM 72Pin SODIMM based on 16M X 4 Features General Description The UG316E324(8)4HSG is a 16,777,216 bits by 32 SODIMM module.The UG316E324(8)4HSG is assembled using 8 pcs of 16M x 4 4K/8K refresh DRAMs in 32-pin TSOP package mounted on a 72pin printed circuit board.

Contextual Info: SL72B4C16M8F-A60V 16M X 72 Bit DRAM 168-Pin DIMM with EDO, ECC, and Buffers FEATURES • GENERAL DESCRIPTION Performance range: tRC tRAC tCAC The SiliconTech SL72B4C16M8F-A60V is a 16M x 72 bit Dynamic RAM DRAM Dual In-line Memory Module (DIMM). The module consists of eighteen 16M x 4 bit DRAMs in a 32pin 400-mil TSOP-II packages. The DRAMs are mounted on a

edo dram 50ns 72-pin simm

Contextual Info: UG216E32R4HSG T Data sheets can be downloaded at www.unigen.com 64M Bytes (16M x 32 bits) EDO MODE DRAM MODULE EDO Mode Unbuffered SIMM w/Voltage Converter based on 8 pcs 16M x 4 DRAM with LVTTL, 4K Refresh GENERAL DESCRIPTION PIN ASSIGNMENT (Front View)

Contextual Info: UG216E32R4HST-6EK Data sheets can be downloaded at www.unigen.com 64M Bytes 16M x 32 bits EDO MODE DRAM MODULE EDO Mode Unbuffered SIMM w/Voltage Convertor based on 8 pcs 16M x 4 DRAM with LVTTL, 4K Refresh GENERAL DESCRIPTION PIN ASSIGNMENT (Front View)

edo dram 60ns 72-pin simm

Abstract: edo dram 50ns 72-pin simm
Contextual Info: UG216E32R4HK S G(T) Data sheets can be downloaded at www.unigen.com 64M Bytes (16M x 32 bits) EDO MODE DRAM MODULE EDO Mode Unbuffered SIMM w/Voltage Converter based on 8 pcs 16M x 4 DRAM with LVTTL, 4K Refresh GENERAL DESCRIPTION PIN ASSIGNMENT (Front View)

Contextual Info: UG8M163224QRR-6 Data sheets can be downloaded at www.unigen.com EDO MODE DRAM MODULE 64M Bytes 16M x 32 bits EDO Mode Unbuffered SIMM w/Voltage Converter based on 8 pcs 16M x 4 DRAM with LVTTL, 4K Refresh GENERAL DESCRIPTION PIN ASSIGNMENT (Front View) 72-Pin SIMM

cs 344C

Abstract: 1L33 M30009 344c amplifier tcl 2272 16MX4 4MX16 AS4LC4M16S0 1L3000 IH380
Contextual Info: A S4LC 16M 4S0 A S4LC 8M 8S0 A S4LC 4M 16S0 H ig h p e r f o r m a n c e 16 M x 4 / 8 M x 8 / 4 M x 16 CM OS DRAM A 6 4 M egabit CMOS synchronous DRAM Advance information Features • O rg a n iz a tio n - 4 ,1 9 4 ,3 0 4 w ords X 4 bits X 4 banks 16M X4

Contextual Info: 16Mx64 bits PC100 SDRAM Unbuffered DIMM based on 16Mx8 SDRAM with LVTTL, 4 banks & 4K Refresh GMM26417233ATG Description The GMM26417233ATG is a 16M x 64bits Synchronous Dynamic RAM MODULE which is assembled 8 pieces of 16M x 8bits Synchronous DRAMs in 54 pin TSOP II

Contextual Info: 16Mx64 bits PC100 SDRAM Unbuffered DIMM based on 16Mx8 SDRAM with LVTTL, 4 banks & 4K Refresh GMM26417233ATG Description The GMM26417233ATG is a 16M x 64bits Synchronous Dynamic RAM MODULE which is assembled 8 pieces of 16M x 8bits Synchronous DRAMs in 54 pin TSOP II

u8 .000

Contextual Info: 16Mx72 bits PC100 SDRAM Unbuffered DIMM based on 16Mx8 SDRAM with LVTTL, 4 banks & 4K Refresh GMM27317233ATG Description The GMM27317233ATG is a 16M x 72bits Synchronous Dynamic RAM MODULE which is assembled 9 pieces of 16M x 8bits Synchronous DRAMs in 54 pin TSOP II

Contextual Info: 16Mx72 bits PC100/PC133 SDRAM Registered DIMM based on 8Mx8 SDRAM with LVTTL, 4 banks & 4K Refresh GMM27316230ETG Description The GMM27316230ETG is a 16M x 72bits Synchronous Dynamic RAM MODULE which is assembled 18 pieces of 16M x 4bits Synchronous DRAMs in 54 pin TSOP II, 2

Contextual Info: 16Mx72 bits PC100 SDRAM Registered DIMM based on 16Mx8 SDRAM with LVTTL, 4 banks & 4K Refresh GMM27317230ATG Description Features The GMM27317230ATG is a 16M x 72bits Synchronous Dynamic RAM MODULE which is assembled 9 pieces of 16M x 8bits Synchronous DRAMs in 54 pin TSOP II

Contextual Info: UG216W3264HK S G(T) 64M Bytes (16M x 32) DRAM 72Pin SIMM based on 16M X 4 General Description Features The UG216W3264HK(S)G(T) is a 16,777,216 bits by 32 SIMM module.The UG216W3264HK(S)G(T) is assembled using 8 pcs of 16Mx4 3.3V 4K refresh EDO DRAMs 400Mil SOJ/TSOP Packages mounted

Contextual Info: UG516W644 8 4HK(S)G 128M Bytes (16M x 64) DRAM 168Pin DIMM based on 16M x 4 General Description Features The UG516W644(8)4HK(S)G is a 16,777,216 bits by 64 EDO DRAM module. The UG516W644(8)4HK(S)G is assembled using 16 pcs of 16Mx4 4K/8K refresh DRAMs in 400mil SOJ

Contextual Info: UG516W664 8 4HK(S)G 128M Bytes (16M x 64) DRAM 168Pin DIMM based on 16M x 4 General Description Features The UG516W664(8)4HK(S)G is a 16,777,216 bits by 64 EDO DRAM module. The UG516W664(8)4HK(S)G is assembled using 16 pcs of 16Mx4 4K/8K refresh DRAMs in a 32 pin 400

Contextual Info: HANBit HMD16M32M8EH 64Mbyte 16Mx32 72-pin EDO Mode 4K Ref. SIMM Design 5V Part No. HMD16M32M8EH GENERAL DESCRIPTION The HMD16M32M8EH is a 16M x 32bit dynamic RAM high-density memory module. The module consists of eight CMOS 16M x 4bit DRAMs in 32-pin TSOPII packages mounted on a 72-pin, double-sided, FR-4-printed circuit board. A

240mil

Abstract: ABT16244
Contextual Info: UG516E644 8 4HK(S)G 128M Bytes (16M x 64) DRAM 168Pin DIMM based on 16M x 4 General Description Features The UG516E644(8)4HK(S)G is a 16,777,216 bits by 64 EDO DRAM module. The UG516E644(8)4HK(S)G is assembled using 16 pcs of 16Mx4 4K/8K refresh DRAMs in 400mil SOJ