Untitled
Abstract: No abstract text available
Text: iPEM 2.4Gb SDRAM-DDR AS4DDR32M72PBG1 32Mx72 DDR SDRAM iNTEGRATED Plastic Encapsulated Microcircuit FEATURES BENEFITS DDR SDRAM Data Rate = 200, 250, 266, 333Mbps Package: • 208 Plastic Ball Grid Array PBGA , 16 x 23mm-1.0mm pitch 2.5V ±0.2V core power supply
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AS4DDR32M72PBG1
32Mx72
333Mbps
23mm-1
208-PBGA
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Untitled
Abstract: No abstract text available
Text: iPEM 2.4 Gb SDRAM-DDR2 AS4DDR232M72PBG 32Mx72 DDR2 SDRAM iNTEGRATED Plastic Encapsulated Microcircuit FEATURES BENEFITS DDR2 Data rate = 667, 533, 400 Available in Industrial, Enhanced and Military Temp Package: • 255 Plastic Ball Grid Array PBGA , 25 x 32mm
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AS4DDR232M72PBG
32Mx72
AS4DDR232M72PBG
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ACT-D16M96S
Abstract: BSA1 BS-B1
Text: Standard Products ACT-D16M96S High Speed 16MegaBit x 96 3.3V Synchronous DRAM Multichip Module May 29, 2007 FEATURES ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ Six 6 low power 4M x 16 x 4 banks Synchronous Dynamic Random Access Memory chips in one MCM
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ACT-D16M96S
16MegaBit
50-MHz
192-cycle
SCD3370
BSA1
BS-B1
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Untitled
Abstract: No abstract text available
Text: MEMORY MODULE DDR2 SDRam 128Mx72-BGA 3D2D8G72UB3369 DDR2 Synchronous Dynamic Ram 8Gbit DDR2 SDRam organized as 128Mx72, based on 128Mx16 MODULE Pin Assignment Top View BGA 208 - (11x19 - Pitch 1.00mm) (TOP VIEW - VIEWED BY TRANSPARENCY) 11 10 9 8 7 6 5 4
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128Mx72-BGA
3D2D8G72UB3369
128Mx72,
128Mx16
11x19
128Mx72
MMXX00000000XXX
3DFP-0369-REV
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Untitled
Abstract: No abstract text available
Text: i PEM 2.1 G b SDRAM-DDR2 Gb Austin Semiconductor, Inc. AS4DDR232M64PBG 32Mx64 DDR2 SDRAM iNTEGRATED Plastic Encapsulated Microcircuit BENEFITS FEATURES DDR2 Data rate = 667, 533, 400 Available in Industrial, Enhanced and Extended Temp
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AS4DDR232M64PBG
32Mx64
AS4DDR232M64PBG
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BA5 marking
Abstract: DQ112-127 BA7 marking HMD4M144D9WG DQ113 BA6 marking BA6137 DQ99
Text: HANBit HMD4M144D9WG 64Mbyte 4Mx144 200-pin ECC Mode 4K Ref. DIMM Design 5V Part No. HMD4M144D9WG GENERAL DESCRIPTION The HMD4M144D9WG is a 4Mbit x 144bit dynamic RAM high-density memory module. The module consists of eight CMOS 4Mx16bit DRAMs in 50-pin TSOP packages and one CMOS 4M x 16bit DRAM in 50pin TSOP package
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HMD4M144D9WG
64Mbyte
4Mx144)
200-pin
HMD4M144D9WG
144bit
4Mx16bit
50-pin
16bit
BA5 marking
DQ112-127
BA7 marking
DQ113
BA6 marking
BA6137
DQ99
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100MHZ
Abstract: 133MHZ WED3DL644V
Text: White Electronic Designs WED3DL644V 4Mx64 SDRAM FEATURES DESCRIPTION The WED3DL644V is a 4Mx64 Synchronous DRAM configured as 4x1Mx64. The SDRAM BGA is constructed with four 4Mx16 SDRAM die mounted on a multi-layer laminate substrate and packaged in a 153 lead, 17mm by
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WED3DL644V
4Mx64
WED3DL644V
4x1Mx64.
4Mx16
133MHZ,
125MHZ
100MHZ.
100MHZ
133MHZ
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W72M64V-XBX
Abstract: No abstract text available
Text: W72M64V-XBX 2Mx64 3.3V Simultaneous Operation Flash Multi-Chip Package *Preliminary FEATURES ! Access Times of 100, 120, 150ns ! Unlock Bypass Program command ! Packaging • Reduces overall programming time when issuing multiple program command sequences
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W72M64V-XBX
2Mx64
150ns
13x22mm
100ns
120ns
W72M64V-XBX
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W78M64VP-XSBX
Abstract: W78M64VP
Text: White Electronic Designs W78M64VP-XSBX 8Mx64 Flash 3.3V Page Mode Multi-Chip Package FEATURES Secured Silicon Sector region Access Times of 110, 120ns • 128-word sector for permanent, secure identification through an 8-word random Electronic
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W78M64VP-XSBX
8Mx64
120ns
13x22mm
W78M64VP-XSBX
W78M64VP
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AS4DDR264M72PBG
Abstract: AS4DDR232M72APBG
Text: iPEM 2.4 Gb SDRAM-DDR2 AS4DDR232M72APBG 32Mx72 DDR2 SDRAM iNTEGRATED Plastic Encapsulated Microcircuit FEATURES BENEFITS DDR2 Data rate = 667, 533, 400 Available in Industrial, Enhanced and Military Temp Package: • 255 Plastic Ball Grid Array PBGA , 25 x 32mm
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AS4DDR232M72APBG
32Mx72
AS4DDR264M72PBG
AS4DDR232M72APBG
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AS4DDR264M72PBG
Abstract: H11M1
Text: iPEM 4.8 Gb SDRAM-DDR2 AS4DDR264M72PBG1 64Mx72 DDR2 SDRAM w/ SHARED CONTROL BUS iNTEGRATED Plastic Encapsulated Microcircuit FEATURES BENEFITS DDR2 Data rate = 667, 533, 400 Available in Industrial, Enhanced and Military Temp Package: • Proprietary Enchanced Die Stacked iPEM
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AS4DDR264M72PBG1
64Mx72
dat008
AS4DDR264M72PBG
H11M1
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m5e8
Abstract: No abstract text available
Text: iPEM 4.2 Gb SDRAM-DDR2 AS4DDR264M64PBG1 64Mx64 DDR2 SDRAM w/ SHARED CONTROL BUS iNTEGRATED Plastic Encapsulated Microcircuit BENEFITS FEATURES 58% Space Savings 49% I/O reduction vs Individual CSP approach Reduced part count Reduced trace lengths for lower parasitic
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AS4DDR264M64PBG1
64Mx64
m5e8
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Untitled
Abstract: No abstract text available
Text: iPEM 4.8 Gb SDRAM-DDR2 AS4DDR264M72PBG 64Mx72 DDR2 SDRAM iNTEGRATED Plastic Encapsulated Microcircuit FEATURES BENEFITS DDR2 Data rate = 667, 533, 400 Available in Industrial, Enhanced and Military Temp Package: • 255 Plastic Ball Grid Array PBGA , 25 x 32mm
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AS4DDR264M72PBG
64Mx72
AS4DDR264M72PBG
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AS4DDR232M64PBG
Abstract: No abstract text available
Text: iPEM 2.1 Gb SDRAM-DDR2 AS4DDR232M64PBG 32Mx64 DDR2 SDRAM iNTEGRATED Plastic Encapsulated Microcircuit FEATURES BENEFITS DDR2 Data rate = 667, 533, 400 Available in Industrial, Enhanced and Military Temp Package: • 255 Plastic Ball Grid Array PBGA , 25 x 32mm
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AS4DDR232M64PBG
32Mx64
AS4DDR232M64PBG
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Untitled
Abstract: No abstract text available
Text: White Electronic Designs W78M64V-XSBX PRELIMINARY 8Mx64 Flash 3.3V Page Mode Simultaneous Read/Write Operations Multi-Chip Package FEATURES Access Times of 90, 100, 120ns Unlock Bypass Program command Packaging • 159 PBGA, 13x22mm – 1.27mm pitch • Reduces overall programming time when issuing
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W78M64V-XSBX
8Mx64
120ns
13x22mm
8Mx64,
2x8Mx32
4x8Mx16
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bsc 60h
Abstract: No abstract text available
Text: White Electronic Designs W72M64V-XBX 2Mx64 3.3V Simultaneous Operation Flash Multi-Chip Package *Advanced FEATURES • Access Times of 100, 120, 150ns ■ Unlock Bypass Program command ■ Packaging 159 PBGA, 13x22mm - 1.27mm pitch Reduces overall programming time when issuing
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W72M64V-XBX
2Mx64
150ns
13x22mm
2x2Mx32
100ns
120ns
150ns
bsc 60h
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AS4DDR232M64PBG
Abstract: No abstract text available
Text: i PEM 2.1 G b SDRAM-DDR2 Gb Austin Semiconductor, Inc. AS4DDR232M64PBG 32Mx64 DDR2 SDRAM iNTEGRATED Plastic Encapsulated Microcircuit BENEFITS FEATURES DDR2 Data rate = 667, 533, 400 Available in Industrial, Enhanced and Military Temp
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AS4DDR232M64PBG
32Mx64
AS4DDR232M64PBG
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AS4DDR232M72PBG
Abstract: AS4DDR264M72PBG
Text: i PEM 2.4 G b SDRAM-DDR2 Gb Austin Semiconductor, Inc. AS4DDR232M72PBG 32Mx72 DDR2 SDRAM iNTEGRATED Plastic Encapsulated Microcircuit BENEFITS FEATURES DDR2 Data rate = 667, 533, 400 Available in Industrial, Enhanced and Extended Temp
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AS4DDR232M72PBG
32Mx72
AS4DDR232M72PBG
AS4DDR264M72PBG
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AS4DDR232M64PBG
Abstract: No abstract text available
Text: i PEM 2.1 G b SDRAM-DDR2 Gb Austin Semiconductor, Inc. AS4DDR232M64PBG 32Mx64 DDR2 SDRAM iNTEGRATED Plastic Encapsulated Microcircuit BENEFITS FEATURES DDR2 Data rate = 667, 533, 400 Available in Industrial, Enhanced and Extended Temp
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AS4DDR232M64PBG
32Mx64
AS4DDR232M64PBG
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000FFFFH
Abstract: 0x0055
Text: White Electronic Designs W78M64VP-XSBX *ADVANCED 8Mx64 Flash 3.3V Page Mode Multi-Chip Package FEATURES Secured Silicon Sector region Access Times of 110, 120ns • 128-word/256-byte sector for permanent, secure identification through an 8-word/16-byte random
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W78M64VP-XSBX
8Mx64
120ns
13x22mm
128KB
000FFFFH
0x0055
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Untitled
Abstract: No abstract text available
Text: White Electronic Designs WED3DL644V 4Mx64 SDRAM FEATURES DESCRIPTION The WED3DL644V is a 4Mx64 Synchronous DRAM configured as 4x1Mx64. The SDRAM BGA is constructed with four 4Mx16 SDRAM die mounted on a multi-layer laminate substrate and packaged in a 153 lead, 17mm by
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WED3DL644V
4Mx64
WED3DL644V
4x1Mx64.
4Mx16
133MHZ,
125MHZ
100MHZ.
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Untitled
Abstract: No abstract text available
Text: iPEM 4.8 Gb SDRAM-DDR2 AS4DDR264M72PBG 64Mx72 DDR2 SDRAM iNTEGRATED Plastic Encapsulated Microcircuit FEATURES BENEFITS DDR2 Data rate = 667, 533, 400 Available in Industrial, Enhanced and Military Temp Package: • 255 Plastic Ball Grid Array PBGA , 25 x 32mm
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AS4DDR264M72PBG
64Mx72
AS4DDR264M72PBG
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Untitled
Abstract: No abstract text available
Text: iPEM 4.2 Gb SDRAM-DDR2 AS4DDR264M64PBG1 64Mx64 DDR2 SDRAM w/ SHARED CONTROL BUS iNTEGRATED Plastic Encapsulated Microcircuit FEATURES BENEFITS DDR2 Data rate = 667, 533, 400 Available in Industrial, Enhanced and Military Temp Package: • Proprietary Enchanced Die Stacked iPEM
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AS4DDR264M64PBG1
64Mx64
AS4DDR264M64PBG1
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AS4DDR232M72APBG
Abstract: No abstract text available
Text: iPEM 2.4 Gb SDRAM-DDR2 AS4DDR232M72APBG 32Mx72 DDR2 SDRAM iNTEGRATED Plastic Encapsulated Microcircuit FEATURES BENEFITS DDR2 Data rate = 667, 533, 400 Available in Industrial, Enhanced and Military Temp Package: • 255 Plastic Ball Grid Array PBGA , 25 x 32mm
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AS4DDR232M72APBG
32Mx72
AS4DDR232M72APBG
2010Preliminary
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