H11M2
Abstract: H11M1
Text: D U A L IT Y TECHNOLOGIES CORP S7E ]> O p t o i s o l a t o r S p e c i f i c a t i o n s _ 7L>bba¿i ooonagp t4s maty H11M1, H11M2 Optoisolator GaAIAs Infrared Emitting Diode and Light Activated SCR T h e H 11M 1 an d H 11 M2 contain a gallium -alum inum -arsenide, in frared
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H11M1,
H11M2
74bb651
H11M2
H11M1
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H11M2
Abstract: No abstract text available
Text: 3875081 G E S O L I D STATE 0 1E 19750 Optoelectronic S p ecificatio n s- HARRI S SENI COND SECTOR 3 7E D • 4302271 0027212 1 Photon Coupled Isolator H11M1, H11M2 G a A1 As In frared E m itting D iode & Light A ctivated S C R The GE Solid State H U M l and H 11 M2 contain a gallium aluminum arsenide,
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H11M1,
H11M2
H11M2
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H11M1
Abstract: Opto-isolator H11M2
Text: Optolsolator Specifications H11M1, H11M2 Optoisolator GaAIAs Infrared Emitting Diode and Light Activated S C R T h e H U M l a n d H 1 1M2 contain a gallium -alum inum -arsenide, infrared e m ittin g d io d e co u p led to a u n iq u e high voltage silicon co n tro lle d
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H11M1,
H11M2
H11M1
Opto-isolator
H11M2
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H11M1
Abstract: h11m H11M2
Text: O ptoisolator S pecification s H11M1, H11M 2 O ptoisolator G aA IAs Infrared Emitting D io de and Light Activated S C R T h e H 11M 1 an d H 11 M2 contain a gaUium -alurninum -arsenide, i n frared em itting d io d e co u p led to a u n iq u e high voltage silicon co n tro lled
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H11M1,
H11M2
H11M1
h11m
H11M2
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Untitled
Abstract: No abstract text available
Text: r 1 I 2 „ t M « i i z l£ M « £ -2 i e > r h a \ ri w “U 5D 14 B. « „ Ui 3 * ^ 5 J i RIGHT ANGLE SOLDER TAIL ABOVE P.C.B. 5 .0m m STAND-OFF P /N : 9 5 6 2 0 - 1 5QCA 1 • NOTES; 1. REFER TO HEADER DRAWING M U D AN D EJECT MECHANISM 9 3 0 7 9 FDR ADDITIONAL DIMENSIONS,
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A55EMBLY
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103z
Abstract: H11M1 tv circuit B/varistor E 103z
Text: TAIYO YUDEN IC.s ^ M ¡^ • aH YZB RIBID B VCI-TMS FOWCOLOR TFT LCD FOR AV APPUCXTION Video Chroma Interface SMD FEATURES External dimensions • This is a pla n e -a sse m b le d -typ e hybrid 1C w hich im p ro v e s bo a rd design efficiency and enables high density integration
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H11M12
13H14
103z
H11M1
tv circuit
B/varistor E 103z
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MOC3Q11
Abstract: h11m qx14 21B6 LED55C H11M1 22b4 22L2 NY33 H11M4
Text: Quick-Reference Product Guide HARRIS OPTOELECTRONIC Devices Index to Types Type No. ' 4 Page No. Type No. Page No. IN6264 IN6265 IN 6266 4N25 4N25A 4N26 4N27 4N28 4N29 4N29A 166 166 168 196 196 196 196 196 198 198 F5F1 F5G1 GE3009 GE3010 GE3011 GE3Ô12 GE3020
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IN6264
IN6265
4N25A
4N29A
4N32A
BPW37
BPW38
CNX35
CNY28
CNY30
MOC3Q11
h11m
qx14
21B6
LED55C
H11M1
22b4
22L2
NY33
H11M4
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thyristor TAG 8506
Abstract: nais inverter vf 7f operation manual 922AA1Y-A4P optek A400 817 Sprague 513D sprague 926c Sprague 195P Rapa relay 12vdc triac tag 8948 Mascot 719
Text: TABLE OF CONTENTS Catalog Number 11Q New For 1989! • Over 7,900 New Products • 13 New M anufacturers PRODUCT INDICES tiamp*,'fminei forskSockets ' Solder Equipment endTtfob ] vriHp\< lint Equipment, Panel Meters, Aejulpmant, i A P R E M IE R C o m p an y
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11PM104
thyristor TAG 8506
nais inverter vf 7f operation manual
922AA1Y-A4P
optek A400 817
Sprague 513D
sprague 926c
Sprague 195P
Rapa relay 12vdc
triac tag 8948
Mascot 719
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CNY17 III
Abstract: H11M1 H11M4 SL5504 H21B5 CNX35 GE3022 l14g1-l14g2-l14g3 CNY47
Text: Quick-Reference Product Guide _ HARRIS OPTOELECTRONIC Devices Index to Types Type No. 4 Page No. Type No. Page No. Type No. Page No. Type No. Page No. IN6264 IN6265 IN6266 4N25 4N25A 4N26 4N27 4N28 4N29 4N29A 166 166 168 196 196 196
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IN6264
IN6265
IN6266
4N25A
4N29A
4N32A
4N38A
BPW36
BPW37
BPW38
CNY17 III
H11M1
H11M4
SL5504
H21B5
CNX35
GE3022
l14g1-l14g2-l14g3
CNY47
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