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    4N29A Search Results

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    4N29A Price and Stock

    Toshiba America Electronic Components 4N29A(SHORT,F)

    Optocoupler DC-IN 1-CH Darlington With Base DC-OUT 6-Pin PDIP - Bulk (Alt: 4N29A(SHORT,F))
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    Motorola Semiconductor Products 4N29A

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    Bristol Electronics 4N29A 2
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    Quest Components 4N29A 32
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    4N29A 4
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    4N29A Datasheets (14)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    4N29A Motorola Phototransistor, NPN Phototransistor And PN Infrared Emitting Diode Original PDF
    4N29A Motorola 6-Pin DIP Optoisolators Darlington Output Original PDF
    4N29A General Electric Semiconductor Data Handbook 1977 Scan PDF
    4N29A General Electric Photon coupled isolator. GaAs infrared emitting diode & NPN silicon photo-darlington amplifier. Scan PDF
    4N29A Motorola Switchmode Datasheet Scan PDF
    4N29A Motorola European Master Selection Guide 1986 Scan PDF
    4N29A Motorola Optoelectronics Device Data 1988 Scan PDF
    4N29A Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    4N29A Unknown Interface IC/Device Data Book (Japanese) Scan PDF
    4N29A Spectronics Product Data Book (Shortform) Scan PDF
    4N29A Toshiba PHOTO TRANSISTOR (AC LINE/DIGITAL LOGIC ISOLATOR) Scan PDF
    4N29A Toshiba Photocoupler Scan PDF
    4N29A(SHORT) Toshiba Scan PDF
    4N29A(SHORT,F) Toshiba Optoisolators - Transistor, Photovoltaic Output, Isolators, OPTOISO 2.5KV DARL W/BASE 6DIP Original PDF

    4N29A Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    opto 4N33

    Abstract: 4N32-1 4N33 Data sheet 7500 IC 14 PIN 4N29 4N29A 4N30 4N31 4N32 4N33
    Text: MOTOROLA Order this document by 4N29/D SEMICONDUCTOR TECHNICAL DATA 4N29 4N29A 4N30 * 4N31 4N32 * 4N33 * GlobalOptoisolator 6-Pin DIP Optoisolators Darlington Output [CTR = 100% Min] The 4N29/A, 4N30, 4N31, 4N32 1 and 4N33(1) devices consist of a gallium


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    PDF 4N29/D 4N29A 4N29/A, 4N29/D* opto 4N33 4N32-1 4N33 Data sheet 7500 IC 14 PIN 4N29 4N29A 4N30 4N31 4N32 4N33

    optocoupler crossreference

    Abstract: fairchild optocoupler cross reference MOC256 H11AA1M H11AA2M MOTOROLA Cross Reference Search H11L1M H11AA4M MOC3062M MOC3081M
    Text: AC Input Phototransistor Small Outline Surface Mount Optocoupler MOC256 The MOC256 is an AC input phototransistor optocoupler. The device consists of two infrared emitters connected in anti–parallel and coupled to a silicon NPN phototransistor detector. They are designed for applications requiring the


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    PDF MOC256 E90700, InputC215-M MOC223-M MOC3011-M MOC3021-M MOC3031-M MOC3041-M MOC3051-M MOC3062-M optocoupler crossreference fairchild optocoupler cross reference H11AA1M H11AA2M MOTOROLA Cross Reference Search H11L1M H11AA4M MOC3062M MOC3081M

    MOC3051

    Abstract: MOC3051 "cross reference" moc3052 cross reference fairchild tape reel moc3052 MOC3052 "cross reference" parallel triacs triac operation MOC3052 APPLICATION CIRCUITS 4N25 zero CROSS MOC3051FM
    Text: MOC3051 MOC3052 GlobalOptoisolator 6-Pin DIP Random-Phase Optoisolators Triac Drivers 600 Volts Peak The MOC3051 Series consists of a GaAs infrared LED optically coupled to a non–Zero–crossing silicon bilateral AC switch (triac). The MOC3051 Series


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    PDF MOC3051 C215-M MOC223-M MOC3011-M MOC3021-M MOC3031-M MOC3041-M MOC3051-M MOC3051 "cross reference" moc3052 cross reference fairchild tape reel moc3052 MOC3052 "cross reference" parallel triacs triac operation MOC3052 APPLICATION CIRCUITS 4N25 zero CROSS MOC3051FM

    application notes MOC3062

    Abstract: inverse-parallel scr drive circuit moc3061 application note moc3063 application note MOC3061-63 MOC3062M 4n25 application note zero crossing pulse MOC3061 optocoupler MOC 4N35 moc3063sm
    Text: MOC3061 MOC3062 MOC3063 GlobalOptoisolator 6-Pin DIP Zero-Cross Optoisolators Triac Driver Output 600 Volts Peak The MOC3061, MOC3062 and MOC3063 devices consist of gallium arsenide infrared emitting diodes optically coupled to monolithic silicon detectors


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    PDF MOC3061, MOC3062 MOC3063 C215-M MOC223-M MOC3011-M MOC3021-M MOC3031-M MOC3041-M MOC3051-M application notes MOC3062 inverse-parallel scr drive circuit moc3061 application note moc3063 application note MOC3061-63 MOC3062M 4n25 application note zero crossing pulse MOC3061 optocoupler MOC 4N35 moc3063sm

    4N33 APPLICATION NOTE

    Abstract: 4N29 APPLICATION NOTE 4N32A 4N32ASHORT 4n29
    Text: TOSHIBA PHOTOCOUPLER SEMICONDUCTOR T O SH IB A TECHNICAL DATA 4N29 Short , 4N29A(Short), 4N30(Short) 4N31 (Short), 4N32(Short), 4N32A(Short) 4N33(Short) GaAs IRED & PHOTO-TRANSISTOR (4N29(Short) AC LINE/DIGITAL LOGIC ISOLATOR. DIGITAL LOGIC/DIGITAL LOGIC ISOLATOR.


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    PDF 4N29A 4N32A 2500Vrms UL1577, E67349 4N33 APPLICATION NOTE 4N29 APPLICATION NOTE 4N32ASHORT 4n29

    4N33 APPLICATION NOTE

    Abstract: No abstract text available
    Text: TOSHIBA PHOTOCOUPLER SEMICONDUCTOR TO SH IBA TECHNICAL DATA 4N29 Short , 4N29A(Short), 4N30(Short) 4N31 (Short), 4N32(Short), 4N32A(Short) 4N33(Short) GaAs IRED & PHOTO-TRANSISTOR (4N29(Short) AC LINE /DIGITAL LOGIC ISOLATOR. DIGITAL LOGIC/DIGITAL LOGIC ISOLATOR.


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    PDF 4N29A 4N32A 2500Vrms UL1577, E67349 10//S 100Hz 4N33 APPLICATION NOTE

    4N29-4N33

    Abstract: No abstract text available
    Text: 57E J> ÛUALITY TECHNOLOGIES CORP Optoisolator Specifications _ 7MbbfiSl Ü00mi|4 •ÛTY 4N29, 4N29A, 4N30, 4N31, 4N32, 4N32A, 4N33 Optoisolator G aA s Infrared Emitting Diode and N PN Silicon Photo-Darlington Amplifier SY M BO L M IN E


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    PDF 4N29A, 4N32A, E51868 0110b 74bbflSl 4N29-4N33 4N29-4N33

    4N32A

    Abstract: 4n33 4N29A DARLINGTON 4N32 4N29 4N30 4N31 4N32 E67349
    Text: TO SH IBA 4N29,4N29A,4N30,4N31,4N32,4N32A,4N33 Short TOSHIBA PHOTOCOUPLER GaAs IRED & PHOTO-TRANSISTOR 4N29(Short)# 4N29A(Short)f 4N30(Short)f 4N31 (Short) 4N32(Short)# 4N32A(Short)f 4N33(Short) AC LINE/DIGITAL LOGIC ISOLATOR. DIGITAL LOGIC/DIGITAL LOGIC ISOLATOR.


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    PDF 4N29A 4N32A 2500Vrms UL1577, E67349 11hen 4n33 DARLINGTON 4N32 4N29 4N30 4N31 4N32 E67349

    Untitled

    Abstract: No abstract text available
    Text: Optoisolator Specifications 4N29, 4N29A, 4N30, 4N31, 4N32, 4N32A, 4N33 Optoisolator G a A s Infrared Emitting Diode and N PN Silicon Photo-Darlington Amplifier The 4N29 through 4N33 devices consist of a gallium arsenide infrared em itting diode coupled with a silicon photo-D arlington amplifier in a


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    PDF 4N29A, 4N32A, E51868 0110b 4N29-4N33

    Untitled

    Abstract: No abstract text available
    Text: 37E J> HARRIS SEMICOND SECTOR 4302571 G[12713b D B H A S Optoelectronic Specifications — Photon Coupled isolator 4N29-4N29A-4N30-4N31 4N32-4N32A-4N33 — M IL L IM E T E R S SYVIAJL Ga A s Infrared E m ittin g D io d e & N P N S ilico n P h oto-D arlin gton A m p lifier


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    PDF 12713b 4N29-4N29A-4N30-4N31 4N32-4N32A-4N33 S-429S

    4N32A

    Abstract: 4N29 4N29A 4N30 4N31 4N32 4N33 E67349
    Text: TOSHIBA 4N29#4N29A#4N30#4N31#4N32#4N32A#4N33 Short TOSHIBA PHOTOCOUPLER GaAs IRED & PHOTO-TRANSISTOR 4N29(Short), 4N29A(Short)f 4N30(Short)f 4N31 (Short) 4N32(Short)# 4N32A(Short)f 4N33(Short) AC LINE/DIGITAL LOGIC ISOLATOR. DIGITAL LOGIC/DIGITAL LOGIC ISOLATOR.


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    PDF 4N29A 4N32A 2500Vrms UL1577, E67349 11-7A8MBIENT 4N29 4N30 4N31 4N32 4N33 E67349

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 4N29,4N29A,4N30,4N31,4N32,4N32A,4N33 Short TOSHIBA PHOTOCOUPLER GaAs IRED & PHOTO-TRANSISTOR 4N29(Short), 4N29A(Short), 4N30(Short), 4N31 (Short) 4N32(Short)f 4N32A(Short)f 4N33(Short) AC LINE/DIGITAL LOGIC ISOLATOR. DIGITAL LOGIC/DIGITAL LOGIC ISOLATOR.


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    PDF 4N29A 4N32A 100/js 2500Vrms UL1577, E67349 2500Vrms

    4N29

    Abstract: 4N29A VDE0160 VDE0832 VDE0833 4N32-4N32A-4N33 7500 IC 14 PIN 4n32
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 4N 29 4N29A 4N30 4N 31 4N32 4N32A 4N33 6 -P in D IP O p to is o la to rs Darlington Output Each device consists o f a gallium arsenide infrared em itting diode optically coupled to a m onolithic silicon photodarlington detector.


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    PDF E54915 IEC380/VDE08CI6, IEC435/VDE0805, IEC65/VDE0860, VDE0110b, 30A-02 Y145M, 4N29 4N29A VDE0160 VDE0832 VDE0833 4N32-4N32A-4N33 7500 IC 14 PIN 4n32

    CNY57A

    Abstract: CNY62 sharp pc613 CNY63 CNY57 QTC 4N35 MOC7811 sensor MOC7811 QTC 4N25 hafo 3c63b
    Text: Tem ic Semiconductors Cross Reference List Opto Corapetltwn-Type Isolators 3C63B 3C63C 3C91B 3C91C 3C92B 3C92C 3N243 3N244 3N245 3N281 4N25, 25A 4N26 4N27 4N28 4N29 4N29A 4N30 4N31 4N32 4N33 4N35 4N37 4N38 CLA7 CLA7AA CNX21 ' CNX35 ; CNX36 CNX38 1CNX82 i CNX83


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    PDF 3C63B 3C63C 3C91B 3C91C 3C92B 3C92C 3N243 3N244 3N245 3N281 CNY57A CNY62 sharp pc613 CNY63 CNY57 QTC 4N35 MOC7811 sensor MOC7811 QTC 4N25 hafo 3c63b

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA VDE ca TO BS ® ® UL CSA SETI SEMKODEM KO NEMKO BABT 4N29 4N29A 4N30* 6-Pin D IP O p to iso la to rs D arlin g to n O u tp u t [CTR • 100% Min] 4N 31 {CTR * 50% Min] 4N32* 4N32A* 4N33 The 4N29/A, 4N30, 4N31, 4N32/A and 4N33 devices consist of a gallium arsenide


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    PDF 4N29/A, 4N32/A 4N29A 4N32A* 500re 4N29A, 4N32A,

    Opto-isolator

    Abstract: No abstract text available
    Text: Optoisolator Specifications 4N29, 4N29A, 4N30, 4N31, 4N32, 4N32A, 4N33 Optoisolator GaAs Infrared Emitting Diode and NPN Silicon Photo-Darlington Amplifier T he 4N 29 th ro u g h 4N 33 d evices c o n sis t o f a g a lliu m a rsen id e infrared e m ittin g dio d e co u p le d w ith a silic o n p h o to -D a rlin g to n am p lifier in a


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    PDF 4N29A, 4N32A, E51868 4N29A 0110b 4N29-4N33 Opto-isolator

    MOC3Q11

    Abstract: h11m qx14 21B6 LED55C H11M1 22b4 22L2 NY33 H11M4
    Text: Quick-Reference Product Guide HARRIS OPTOELECTRONIC Devices Index to Types Type No. ' 4 Page No. Type No. Page No. IN6264 IN6265 IN 6266 4N25 4N25A 4N26 4N27 4N28 4N29 4N29A 166 166 168 196 196 196 196 196 198 198 F5F1 F5G1 GE3009 GE3010 GE3011 GE3Ô12 GE3020


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    PDF IN6264 IN6265 4N25A 4N29A 4N32A BPW37 BPW38 CNX35 CNY28 CNY30 MOC3Q11 h11m qx14 21B6 LED55C H11M1 22b4 22L2 NY33 H11M4

    CNY17 III

    Abstract: H11M1 H11M4 SL5504 H21B5 CNX35 GE3022 l14g1-l14g2-l14g3 CNY47
    Text: Quick-Reference Product Guide _ HARRIS OPTOELECTRONIC Devices Index to Types Type No. 4 Page No. Type No. Page No. Type No. Page No. Type No. Page No. IN6264 IN6265 IN6266 4N25 4N25A 4N26 4N27 4N28 4N29 4N29A 166 166 168 196 196 196


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    PDF IN6264 IN6265 IN6266 4N25A 4N29A 4N32A 4N38A BPW36 BPW37 BPW38 CNY17 III H11M1 H11M4 SL5504 H21B5 CNX35 GE3022 l14g1-l14g2-l14g3 CNY47

    GE 4N33

    Abstract: 4n33 11-7A8 4N29SHORT
    Text: T O SH IB A 4N29/4N29A,4N30,4N31,4N32,4N32A/4N33 Short TOSHIBA PHOTOCOUPLER GaAs IRED & PHOTO-TRANSISTOR 4N29(Short), 4N29A(Short), 4N30(Short), 4N31 (Short) 4N32(Short), 4N32A(Short), 4N33(Short) AC LINE/DIGITAL LOGIC ISOLATOR. DIGITAL LOGIC/DIGITAL LOGIC ISOLATOR.


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    PDF 4N29/4N29A 4N32A/4N33 4N29A 4N32A UL1577, E67349 GE 4N33 4n33 11-7A8 4N29SHORT

    Untitled

    Abstract: No abstract text available
    Text: “û7 MARKTEC H INT ER NA TION AL Mf| 5 7 ^ 5 5 DARLINGTON COUPLER S7996S5 M A R K T E C H INTERNATI O N AL u 87D 00132 QDGDÎ35 fl D 4N29, 4N29A, 4N32, 4N32A GaAs INFRABED EMITTING DIODE & NPN SILICON PHOTO DARLINGTON APPLICATIONS • AC LINE/DIGITAL LOGIC ISOLATOR


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    PDF S7996S5 4N29A, 4N32A 4N32A 100fts. 0D00134

    transistor 91 330

    Abstract: tlp 122 TRANSISTOR TLP635F 388 transistor R358 395 transistor transistor f 421 IC 4N25 triac 40 RIA 120
    Text: 3. Alphanumeric Index Type 4N25 4N25A 4N26 4N27 4N28 4N29 4N29A 4N30 4N31 4N32 4N32A 4N33 4N35 4N36 4N37 4N38 4N38À 6N135 6N136 6N137 6N138 6N139 CNY17-L CNY17-M CNY17-N H 11AA1 H 11AA2 H11AAS H11AA4 HI 1L1 H11L3 TLP112 TLP112A TLP113 TLP115 TLP115A TLP120


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    PDF 4N25A 4N29A 4N32A 6N135 6N136 6N137 6N138 6N139 CNY17-L CNY17-M transistor 91 330 tlp 122 TRANSISTOR TLP635F 388 transistor R358 395 transistor transistor f 421 IC 4N25 triac 40 RIA 120

    GE 4N35

    Abstract: ES1868 4N32-4N32A-4N33 GE 4N33 4N29 4N29A 4N30 4N31 4N32 4N32A
    Text: G E SOLID STATE 01 D E | 3 f l 7 5 Q f l l □Ont.74 1 Optoelectronic Specifications 2$ Photon Coupled Isolator 4N29-4N29A-4N30-4N31 4N32-4N32A-4N33 — SYtTini Ga As Infrared E m itting Diode & NPN Silicon Photo-D arlington Am plifier T h e G E S o lid S ta te 4N 29 th ru 4N 33 devices co n sist o f a g allium arsen id e


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    PDF 4N29-4N29A-4N30-4N31 4N32-4N32A-4N33 4N35-37 GE 4N35 ES1868 4N32-4N32A-4N33 GE 4N33 4N29 4N29A 4N30 4N31 4N32 4N32A

    4n32

    Abstract: 4N33 Motorola
    Text: MOTOROLA SEM ICONDUCTOR TECHNICAL DATA 4N29 4N29A 4N30 4N31 4N32 4N32A 4N33 6-Pin D IP O p to is o la to r s Darlington Output Each device c o n sists of a galliu m arse nid e infrared em itting d io d e optically co up led to a m on olith ic silicon pho to d arlin gto n detector.


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    PDF E54915 IEC380/VDE0806, IEC435/VDE0805, IEC65/VDE0860, 30A-02 4n32 4N33 Motorola

    Untitled

    Abstract: No abstract text available
    Text: PHOTO-TRANSISTOR 4N29,29A,30,31, 4N32,32A, 33 Short (4 N 2 9 (S h o rt() A C LIN E/D IG ITA L LOGIC ISOLATOR. DIG ITAL LOGIC/DIGITAL LOGIC ISOLATOR. TELEPHONE LINE RECEIVER. TW ISTED PAIR LINE RECEIVER. R ELA Y CO N TA CT M ONITOR. The TOSHIBA 4N29 (Short) through 4N33 (Short) consists arsenide


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    PDF 100//S 2500Vrms UL1577, E67349