4X8MX16 Search Results

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Catalog Datasheet	MFG & Type	PDF	Document Tags
WEDPN8M64VR-XBX Abstract: No abstract text available Text: WEDPN8M64VR-XBX 8Mx64 Registered Synchronous DRAM FEATURES GENERAL DESCRIPTION ! Registered for enhanced performance of bus speeds of 66 MHz and 100 MHz The 64MByte 512Mb SDRAM is a high-speed CMOS, dynamic random-access memory using 4 chips containing 134,217,728 bits. Each chip is internally configured as a	Original	PDF	WEDPN8M64VR-XBX 8Mx64 64MByte 512Mb) 432-bit 16-bit WEDPN8M64VR-XBX
Untitled Abstract: No abstract text available Text: White Electronic Designs W78M64V-XSBX PRELIMINARY 8Mx64 Flash 3.3V Page Mode Simultaneous Read/Write Operations Multi-Chip Package FEATURES Access Times of 90, 100, 120ns Unlock Bypass Program command Packaging • 159 PBGA, 13x22mm – 1.27mm pitch • Reduces overall programming time when issuing	Original	PDF	W78M64V-XSBX 8Mx64 120ns 13x22mm 8Mx64, 2x8Mx32 4x8Mx16
Untitled Abstract: No abstract text available Text: White Electronic Designs WEDPN8M64VR-XBX 8Mx64 Registered Synchronous DRAM FEATURES GENERAL DESCRIPTION n Registered for enhanced performance of bus speeds of 66 MHz and 100 MHz The 64MByte 512Mb SDRAM is a high-speed CMOS, dynamic random-access memory using 4 chips containing	Original	PDF	8Mx64 2x8Mx32 4x8Mx16 WEDPN8M64VR-XBX WEDPN8M64VR-XBX 64MByte 512Mb
Untitled Abstract: No abstract text available Text: White Electronic Designs W78M64V-XSBX PRELIMINARY 8Mx64 Flash 3.3V Page Mode Simultaneous Read/Write Operations Multi-Chip Package FEATURES Access Times of 90, 100, 120ns Unlock Bypass Program command Packaging • 159 PBGA, 13x22mm – 1.27mm pitch • Reduces overall programming time when issuing	Original	PDF	W78M64V-XSBX 8Mx64 120ns 13x22mm 8Mx64, 2x8Mx32 4x8Mx16
W78M64V-XSBX Abstract: SA159-SA162 SA222 Text: White Electronic Designs W78M64V-XSBX 8Mx64 Flash 3.3V Page Mode Simultaneous Read/Write Operation Multi-Chip Package FEATURES Access Times of 70, 90, 100, 120ns Unlock Bypass Program command Packaging • 159 PBGA, 13x22mm – 1.27mm pitch • Reduces overall programming time when issuing	Original	PDF	W78M64V-XSBX 8Mx64 120ns 13x22mm W78M64V-XSBX SA159-SA162 SA222
Untitled Abstract: No abstract text available Text: White Electronic Designs W78M64V-XSBX ADVANCED 8Mx64 Flash 3.3V Page Mode Simultaneous Read/Write Operations Multi-Chip Package FEATURES Access Times of 90, 100, 120ns Unlock Bypass Program command Packaging • 159 PBGA, 13x22mm – 1.27mm pitch • Reduces overall programming time when issuing	Original	PDF	W78M64V-XSBX 8Mx64 120ns 13x22mm
W78M64V-XSBX Abstract: No abstract text available Text: White Electronic Designs W78M64V-XSBX 8Mx64 Flash 3.3V Page Mode Simultaneous Read/Write Operation Multi-Chip Package FEATURES Access Times of 70, 90, 100, 120ns Unlock Bypass Program command Packaging • 159 PBGA, 13x22mm – 1.27mm pitch • Reduces overall programming time when issuing	Original	PDF	W78M64V-XSBX 8Mx64 120ns 13x22mm W78M64V-XSBX
WEDPN8M64VR-XBX Abstract: No abstract text available Text: WEDPN8M64VR-XBX 8Mx64 Registered Synchronous DRAM PRELIMINARY FEATURES GENERAL DESCRIPTION n Registered for enhanced performance of bus speeds of 66 MHz and 100 MHz The 64MByte 512Mb SDRAM is a high-speed CMOS, dynamic random-access memory using 4 chips containing	Original	PDF	WEDPN8M64VR-XBX 8Mx64 64MByte 512Mb) 432-bit 16-bit 100MHz 66MHz WEDPN8M64VR-XBX