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    HYM72V16M636AT6

    Abstract: RA12
    Text: 16Mx64 bits PC133 SDRAM SO DIMM based on 16Mx16 SDRAM with LVTTL, 4 banks & 8K Refresh HYM72V16M636AT6 Series DESCRIPTION The Hyundai HYM72V16M636AT6 Series are 16Mx64bits Synchronous DRAM Modules. The modules are composed of four 16Mx16bits CMOS Synchronous DRAMs in 400mil 54pin TSOP-II package, one 2Kbit EEPROM in 8pin TSSOP package on a 168pin


    Original     		16Mx64 PC133 16Mx16 HYM72V16M636AT6 16Mx64bits 16Mx16bits 400mil 54pin 168pin RA12 PDF

    RA12

    Abstract: No abstract text available
    Text: 32Mx64 bits PC133 SDRAM SO DIMM based on 16Mx16 SDRAM with LVTTL, 4 banks & 8K Refresh HYM72V32M636T6 Series DESCRIPTION The Hyundai HYM72V32M636T6 Series are 32Mx64bits Synchronous DRAM Modules. The modules are composed of eight 16Mx16bits CMOS Synchronous DRAMs in 400mil 54pin TSOP-II package, one 2Kbit EEPROM in 8pin TSSOP package on a 168pin


    Original     		32Mx64 PC133 16Mx16 HYM72V32M636T6 32Mx64bits 16Mx16bits 400mil 54pin 168pin RA12 PDF

    Untitled

    Abstract: No abstract text available
    Text: 32Mx64bits PC100 SDRAM SO DIMM based on 16Mx16 SDRAM with LVTTL, 4 banks & 8K Refresh HYM72V32M656B L T6 Series DESCRIPTION The HYM72V32M656B(L)T6 Series are 32Mx64bits Synchronous DRAM Modules. The modules are composed of eight 16Mx16bits CMOS Synchronous DRAMs in 400mil 54pin TSOP-II package, one 2Kbit EEPROM in 8pin TSSOP package on a 144pin glass-epoxy


    Original     		32Mx64bits PC100 16Mx16 HYM72V32M656B 32Mx64bits 16Mx16bits 400mil 54pin 144pin PDF

    pc133 SDRAM DIMM package

    Abstract: HYM72V32M636BT6-H
    Text: 32Mx64bits PC133 SDRAM SO DIMM based on 16Mx16 SDRAM with LVTTL, 4 banks & 8K Refresh HYM72V32M636B L T6 Series DESCRIPTION The HYM72V32M636B(L)T6 Series are 32Mx64bits Synchronous DRAM Modules. The modules are composed of eight 16Mx16bits CMOS Synchronous DRAMs in 400mil 54pin TSOP-II package, one 2Kbit EEPROM in 8pin TSSOP


    Original     		32Mx64bits PC133 16Mx16 HYM72V32M636B 32Mx64bits 16Mx16bits 400mil 54pin 144pin pc133 SDRAM DIMM package HYM72V32M636BT6-H PDF

    RA12

    Abstract: HYM72V32M736BLT6-H
    Text: 32Mx72bits PC133 SDRAM ECC SO DIMM based on 16Mx16 SDRAM with LVTTL, 4 banks & 8K Refresh HYM72V32M736B L T6 Series DESCRIPTION The HYM72V32M736B(L)T6 Series are 32Mx72bits Synchronous DRAM Modules. The modules are composed of ten 16Mx16bits CMOS Synchronous DRAMs in 400mil 54pin TSOP-II package, one 2Kbit EEPROM in 8pin TSSOP package on a 144pin glass-epoxy printed circuit board.


    Original     		32Mx72bits PC133 16Mx16 HYM72V32M736B 32Mx72bits 16Mx16bits 400mil 54pin 144pin RA12 HYM72V32M736BLT6-H PDF

    HYM72V16M656BTU6

    Abstract: HYM72V16M656TU6-8 HYM72V16M656TU6-P HYM72V16M656TU6-S RA12
    Text: 16Mx64 bits PC100 SDRAM SO DIMM based on 16Mx16 SDRAM with LVTTL, 4 banks & 8K Refresh HYM72V16M656BTU6 Series DESCRIPTION The HYM72V16M656BTU6 Series are 8Mx64bits Synchronous DRAM Modules. The modules are composed of four 16Mx16bits CMOS Synchronous DRAMs in 400mil 54pin TSOP-II package, one 2Kbit EEPROM in 8pin TSSOP package on a 144pin glass-epoxy


    Original     		16Mx64 PC100 16Mx16 HYM72V16M656BTU6 8Mx64bits 16Mx16bits 400mil 54pin 144pin HYM72V16M656TU6-8 HYM72V16M656TU6-P HYM72V16M656TU6-S RA12 PDF

    Untitled

    Abstract: No abstract text available
    Text: 32Mx64 bits PC133 SDRAM SO DIMM based on 16Mx16 SDRAM with LVTTL, 4 banks & 8K Refresh HYM72V32M636T6 Series DESCRIPTION The HYM72V32M636T6 Series are 32Mx64bits Synchronous DRAM Modules. The modules are composed of eight 16Mx16bits CMOS Synchronous DRAMs in 400mil 54pin TSOP-II package, one 2Kbit EEPROM in 8pin TSSOP package on a 168pin glass-epoxy


    Original     		32Mx64 PC133 16Mx16 HYM72V32M636T6 32Mx64bits 16Mx16bits 400mil 54pin 168pin PDF

    Untitled

    Abstract: No abstract text available
    Text: 16Mx64 bits PC133 SDRAM SO DIMM based on 16Mx16 SDRAM with LVTTL, 4 banks & 8K Refresh HYM72V16M636B L T6 Series DESCRIPTION The HYM72V16M636B(L)T6 Series are 16Mx64bits Synchronous DRAM Modules. The modules are composed of four 16Mx16bits CMOS Synchronous DRAMs in 400mil 54pin TSOP-II package, one 2Kbit EEPROM in 8pin TSSOP package on a 144 pin glass-epoxy


    Original     		16Mx64 PC133 16Mx16 HYM72V16M636B 16Mx64bits 16Mx16bits 400mil 54pin PDF

    Untitled

    Abstract: No abstract text available
    Text: 256Mb Synchronous DRAM based on 4M x 4Bank x16 I/O 256M 16Mx16bit Hynix SDRAM Memory Memory Cell Array - Organized as 4banks of 4,194,304 x 16 This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for


    Original     		256Mb 16Mx16bit) 111Preliminary 256Mbit HY5V56F PDF

    hynix nand spare area

    Abstract: hy27us08561 HY27US HY27US08561M HY27US16561M hynix nand flash controller reset nand flash HYNIX HY27xSxx121mTxB
    Text: HY27SS 08/16 561M Series HY27US(08/16)561M Series 256Mbit (32Mx8bit / 16Mx16bit) NAND Flash Document Title 256Mbit (32Mx8bit / 16Mx16bit) NAND Flash Memory Revision History No. History Draft Date Remark 0.0 Initial Draft Jul. 10. 2003 Preliminary 0.1 Renewal Product Group


    Original     		HY27SS HY27US 256Mbit 32Mx8bit 16Mx16bit) 256Mb hynix nand spare area hy27us08561 HY27US08561M HY27US16561M hynix nand flash controller reset nand flash HYNIX HY27xSxx121mTxB PDF

    Untitled

    Abstract: No abstract text available
    Text: 64MB 90PIN PC133 CL3 SDRAM SO-DIMM With 16M X 16 3.3VOLT TS64MEP6100 Placement Description The TS64MEP6100 is a 16M bit x 32 Synchronous Dynamic RAM high-density memory modules. The TS64MEP6100 consists of 2 pieces of CMOS 16Mx16bits A Synchronous DRAMs in TSOP-II 400mil packages on a


    Original     		90PIN PC133 TS64MEP6100 TS64MEP6100 16Mx16bits 400mil 90-pin PDF

    Untitled

    Abstract: No abstract text available
    Text: 168PIN PC133 Unbuffered DIMM 256MB With 16Mx16 CL3 TS32MLS64V6G Placement Description The TS32MLS64V6G is a 32M bit x 64 Synchronous Dynamic RAM high-density memory modules. The TS32MLS64V6G consists of 8 piece of CMOS 16Mx16bits Synchronous DRAMs in TSOP-II 400mil packages and a


    Original     		168PIN PC133 256MB 16Mx16 TS32MLS64V6G TS32MLS64V6G 16Mx16bits 400mil 168-pin PDF

    HY57V561620F

    Abstract: HY57V561620FTP HY57V561620FTP-HI HY57V561620FTP-H
    Text: 256Mb Synchronous DRAM based on 4M x 4Bank x16 I/O 256M 16Mx16bit Hynix SDRAM Memory Memory Cell Array - Organized as 4banks of 4,194,304 x 16 This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for


    Original     		256Mb 16Mx16bit) 111Preliminary 256Mbit HY57V561620F HY57V561620FTP HY57V561620FTP-HI HY57V561620FTP-H PDF

    HY57V561620F

    Abstract: HY57V561620FTP HY57V561620FTP-HI hy57v56 HY57V561620FLTP-6 HY57V561620FTP-6I Hynix sdram HY57V561620
    Text: 256Mb Synchronous DRAM based on 4M x 4Bank x16 I/O 256M 16Mx16bit Hynix SDRAM Memory Memory Cell Array - Organized as 4banks of 4,194,304 x 16 This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for


    Original     		256Mb 16Mx16bit) 256Mbit HY57V561620F Page15) A0-A12 HY57V561620FTP HY57V561620FTP-HI hy57v56 HY57V561620FLTP-6 HY57V561620FTP-6I Hynix sdram HY57V561620 PDF

    Untitled

    Abstract: No abstract text available
    Text: 144PIN PC133 Unbuffered SO-DIMM 128MB With 16Mx16 CL3 TS16MSS64V6G Description Features The TS16MSS64V6G is a 16M bit x 64 Synchronous Dynamic • RoHS compliant products. RAM high-density memory module. The TS16MSS64V6G • Performance Range: PC133. consists of 4 piece of CMOS 16Mx16bits Synchronous DRAMs


    Original     		144PIN PC133 128MB 16Mx16 TS16MSS64V6G TS16MSS64V6G PC133. 16Mx16bits 400mil PDF

    Untitled

    Abstract: No abstract text available
    Text: 168PIN PC133 Unbuffered DIMM 128MB with 16Mx16 CL3 TS16MLS64V6G Placement Description The TS16MLS64V6G is a 16M bit x 64 Synchronous Dynamic RAM high-density memory module. The TS16MLS64V6G consists of 4 piece of CMOS 16Mx16bits Synchronous DRAMs in TSOP-II 400mil packages and a


    Original     		168PIN PC133 128MB 16Mx16 TS16MLS64V6G TS16MLS64V6G 16Mx16bits 400mil 168-pin PDF

    RA12

    Abstract: No abstract text available
    Text: 32Mx64bits PC133 SDRAM SO DIMM based on 16Mx16 SDRAM with LVTTL, 4 banks & 8K Refresh HYM72V32M636B L T6 Series DESCRIPTION The HYM72V32M636B(L)T6 Series are 32Mx64bits Synchronous DRAM Modules. The modules are composed of eight 16Mx16bits CMOS Synchronous DRAMs in 400mil 54pin TSOP-II package, one 2Kbit EEPROM in 8pin TSSOP


    Original     		32Mx64bits PC133 16Mx16 HYM72V32M636B 32Mx64bits 16Mx16bits 400mil 54pin 144pin RA12 PDF

    RA12

    Abstract: No abstract text available
    Text: 32Mx64bits PC100 SDRAM SO DIMM based on 16Mx16 SDRAM with LVTTL, 4 banks & 8K Refresh HYM72V32M656B L T6 Series DESCRIPTION The HYM72V32M656B(L)T6 Series are 32Mx64bits Synchronous DRAM Modules. The modules are composed of eight 16Mx16bits CMOS Synchronous DRAMs in 400mil 54pin TSOP-II package, one 2Kbit EEPROM in 8pin TSSOP package on a 144pin glass-epoxy


    Original     		32Mx64bits PC100 16Mx16 HYM72V32M656B 32Mx64bits 16Mx16bits 400mil 54pin 144pin RA12 PDF

    HYM72V16M636LT6

    Abstract: RA12 hyundai chip id
    Text: 16Mx64 bits PC133 SDRAM SO DIMM based on 16Mx16 SDRAM with LVTTL, 4 banks & 8K Refresh HYM72V16M636TU6 Series DESCRIPTION The Hyundai HYM72V16M636TU6 Series are 16Mx64bits Synchronous DRAM Modules. The modules are composed of four 16Mx16bits CMOS Synchronous DRAMs in 400mil 54pin TSOP-II package, one 2Kbit EEPROM in 8pin TSSOP package on a 168pin


    Original     		16Mx64 PC133 16Mx16 HYM72V16M636TU6 16Mx64bits 16Mx16bits 400mil 54pin 168pin HYM72V16M636LT6 RA12 hyundai chip id PDF

    Untitled

    Abstract: No abstract text available
    Text: 16Mx72 bits PC133 SDRAM SO DIMM based on 16Mx16 SDRAM with LVTTL, 4 banks & 8K Refresh HYM72V16M736BFU6 Series DESCRIPTION The HYM72V16M736BFU6 Series are 16Mx72bits Synchronous DRAM Modules. The modules are composed of five 16Mx16bits CMOS Synchronous DRAMs in 54ball FBGA package, one 2Kbit EEPROM in 8pin TSSOP package on a 144pin


    Original     		16Mx72 PC133 16Mx16 HYM72V16M736BFU6 16Mx72bits 16Mx16bits 54ball 144pin PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary HY27SS 08/16 561M Series HY27US(08/16)561M Series 256Mbit (32Mx8bit / 16Mx16bit) NAND Flash Document Title 256Mbit (32Mx8bit / 16Mx16bit) NAND Flash Memory Revision History No. History Draft Date Remark 0.0 Initial Draft Jul. 10. 2003 Preliminary


    Original     		HY27SS HY27US 256Mbit 32Mx8bit 16Mx16bit) 256Mb PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary HY27SS 08/16 561M Series HY27US(08/16)561M Series 256Mbit (32Mx8bit / 16Mx16bit) NAND Flash Document Title 256Mbit (32Mx8bit / 16Mx16bit) NAND Flash Memory Revision History No. History Draft Date Remark 0.0 Initial Draft Jul. 10. 2003 Preliminary


    Original     		HY27SS HY27US 256Mbit 32Mx8bit 16Mx16bit) 256Mb PDF

    hy27us08561A

    Abstract: hy27us08561 HY27 HY27US 48pin-USOP1 hynix hy27 HY27USXX561A 16Mx16Bit
    Text: HY27US 08/16 561A Series HY27SS(08/16)561A Series 256Mbit (32Mx8bit / 16Mx16bit) NAND Flash Document Title 256Mbit (32Mx8bit / 16Mx16bit) NAND Flash Memory Revision History Revision No. 0.0 History Initial Draft. Draft Date Remark Apr. 04. 2005 Preliminary


    Original     		HY27US HY27SS 256Mbit 32Mx8bit 16Mx16bit) 256Mb hy27us08561A hy27us08561 HY27 48pin-USOP1 hynix hy27 HY27USXX561A 16Mx16Bit PDF

    HY57V561620FTP-H

    Abstract: HY57V561620FLTP-6
    Text: 256Mb Synchronous DRAM based on 4M x 4Bank x16 I/O 256M 16Mx16bit Hynix SDRAM Memory Memory Cell Array - Organized as 4banks of 4,194,304 x 16 This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for


    Original     		256Mb 16Mx16bit) 256Mbit HY57V561620F 256Mbit HY57V561620FTP-H HY57V561620FLTP-6 PDF