16Mx4bit
Abstract: KMM53616004BK KMM53616004BKG
Text: DRAM MODULE KMM53616004BK/BKG KMM53616004BK/BKG EDO Mode 16M x 36 DRAM SIMM Using 16Mx4 & 16Mx1, 4K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung KMM53616004B is a 16Mx36bits Dynamic RAM high density memory module. The Samsung KMM53616004B consists of eight CMOS 16Mx4bits DRAMs
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KMM53616004BK/BKG
KMM53616004BK/BKG
16Mx4
16Mx1,
KMM53616004B
16Mx36bits
16Mx4bits
16Mx1bit
72-pin
16Mx4bit
KMM53616004BK
KMM53616004BKG
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KMM53616000BK
Abstract: KMM53616000BKG
Text: DRAM MODULE KMM53616000BK/BKG KMM53616000BK/BKG Fast Page Mode 16M x 36 DRAM SIMM Using 16Mx4 & 16Mx1, 4K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung KMM53616000B is a 16Mx36bits Dynamic RAM high density memory module. The Samsung KMM53616000B consists of eight CMOS 16Mx4bits DRAMs
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KMM53616000BK/BKG
KMM53616000BK/BKG
16Mx4
16Mx1,
KMM53616000B
16Mx36bits
16Mx4bits
16Mx1bit
72-pin
KMM53616000BK
KMM53616000BKG
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KMM53616000BK
Abstract: KMM53616000BKG
Text: DRAM MODULE KMM53616000BK/BKG Revision History Version 0.0 Sept. 1997 • Removed two AC parameters tCACP(access time from CAS) and tAAP(access time from col. addr.) in AC CHARACTERISTICS. Version 0.1 (June 1998) • The 3rd.(4th.) generation of 64M(16M) DRAM components are applied for this module.
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KMM53616000BK/BKG
KMM53616000BK/BKG
16Mx4
16Mx1,
KMM53616000B
16Mx36bits
16Mx4bits
16Mx1bit
KMM53616000BK
KMM53616000BKG
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KMM53616000CK
Abstract: KMM53616000CKG
Text: DRAM MODULE KMM53616000CK/CKG 4Byte 16Mx36 SIMM 16Mx4 & 16Mx1 base Revision 0.0 June 1999 DRAM MODULE Revision History Version 0.0 (June 1999) • The 4th. generation of 64Mb DRAM components are applied for this module. KMM53616000CK/CKG DRAM MODULE KMM53616000CK/CKG
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KMM53616000CK/CKG
16Mx36
16Mx4
16Mx1
KMM53616000CK/CKG
16Mx1,
KMM53616000C
KMM53616000CK
KMM53616000CKG
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Untitled
Abstract: No abstract text available
Text: DRAM MODULE M53631601BE0/BJ0-C 4Byte 16Mx36 SIMM 16Mx4 & 16Mx1 base Revision 0.1 June 1998 DRAM MODULE M53631601BE0/BJ0-C Revision History Version 0.0 (Sept. 1997) • Removed two AC parameters tCACP(access time from CAS) and tAAP(access time from col. addr.) in AC CHARACTERISTICS.
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M53631601BE0/BJ0-C
16Mx36
16Mx4
16Mx1
M53631601BE0/BJ0-C
16Mx1,
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KMM53616004BK
Abstract: KMM53616004BKG
Text: DRAM MODULE KMM53616004BK/BKG Revision History Version 0.0 Sept. 1997 • Removed two AC parameters tCACP(access time from CAS) and tAAP(access time from col. addr.) in AC CHARACTERISTICS. Version 0.1 (June 1998) • The 3rd.(4th.) generation of 64M(16M) DRAM components are applied for this module.
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KMM53616004BK/BKG
KMM53616004BK/BKG
16Mx4
16Mx1,
KMM53616004B
16Mx36bits
16Mx4bits
KMM53616004BK
KMM53616004BKG
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Untitled
Abstract: No abstract text available
Text: DRAM MODULE M53631601CE0/CJ0-C 4Byte 16Mx36 SIMM 16Mx4 & 16Mx1 base Revision 0.0 June 1999 DRAM MODULE Revision History Version 0.0 (June 1999) • The 4th. generation of 64Mb DRAM components are applied for this module. M53631601CE0/CJ0-C DRAM MODULE M53631601CE0/CJ0-C
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M53631601CE0/CJ0-C
16Mx36
16Mx4
16Mx1
M53631601CE0/CJ0-C
16Mx1,
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KMM53616004CK
Abstract: KMM53616004CKG
Text: DRAM MODULE KMM53616004CK/CKG 4Byte 16Mx36 SIMM 16Mx4 & 16Mx1 base Revision 0.0 June 1999 DRAM MODULE Revision History Version 0.0 (June 1999) • The 4th. generation of 64Mb DRAM components are applied for this module. KMM53616004CK/CKG DRAM MODULE KMM53616004CK/CKG
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KMM53616004CK/CKG
16Mx36
16Mx4
16Mx1
KMM53616004CK/CKG
16Mx1,
KMM53616004C
KMM53616004CK
KMM53616004CKG
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Untitled
Abstract: No abstract text available
Text: DRAM MODULE M53611601BE0/BJ0-C 4Byte 16Mx36 SIMM 16Mx4 & 16Mx1 base Revision 0.1 June 1998 DRAM MODULE M53611601BE0/BJ0-C Revision History Version 0.0 (Sept. 1997) • Removed two AC parameters tCACP(access time from CAS) and tAAP(access time from col. addr.) in AC CHARACTERISTICS.
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M53611601BE0/BJ0-C
16Mx36
16Mx4
16Mx1
M53611601BE0/BJ0-C
16Mx1,
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Untitled
Abstract: No abstract text available
Text: DRAM MODULE M53611601CE0/CJ0-C 4Byte 16Mx36 SIMM 16Mx4 & 16Mx1 base Revision 0.0 June 1999 DRAM MODULE Revision History Version 0.0 (June 1999) • The 4th. generation of 64Mb DRAM components are applied for this module. M53611601CE0/CJ0-C DRAM MODULE M53611601CE0/CJ0-C
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M53611601CE0/CJ0-C
16Mx36
16Mx4
16Mx1
M53611601CE0/CJ0
16Mx1,
M53611601CE0/CJ0-C
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km44c16104ak
Abstract: 44c16104
Text: DRAM MODULE KMM53616004AK/AKG KMM53616004AK/AKG Fast Page Mode 16M x 36 DRAM SIMM Using 16Mx4 & 16Mx1, 4K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung KM M 53616004A is a 16Mx36bits RAM high density memory module. The Dynamic Samsung KM M 53616004A consists of eight CM O S 16Mx4bits DRAMs
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KMM53616004AK/AKG
KMM53616004AK/AKG
16Mx4
16Mx1,
3616004A
16Mx36bits
M53616004AK
cycles/64ms
M53616004AKG
km44c16104ak
44c16104
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Untitled
Abstract: No abstract text available
Text: DRAM MODULE KMM53616000BK/BKG KMM53616000BK/BKG Fast Page Mode 16M x 36 DRAM SIMM Using 16Mx4 & 16Mx1, 4K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung KMM53616000B is a 16Mx36bits Dynamic RAM high density memory module. The Samsung KMM53616000B consists of eight CMOS 16Mx4bits DRAMs
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OCR Scan
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PDF
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KMM53616000BK/BKG
KMM53616000BK/BKG
16Mx4
16Mx1,
KMM53616000B
16Mx36bits
16Mx4bits
16Mx1
72-pin
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Untitled
Abstract: No abstract text available
Text: DRAM MODULE KMM53616000BK/BKG KMM53616000BK/BKG Fast Page Mode 16M x 36 DRAM SIMM Using 16Mx4 & 16M x1, 4K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung KMM53616000B is a 16Mx36bits Dynamic RAM high density memory module. The Samsung KMM53616000B consists of eight CMOS 16Mx4bits DRAMs
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OCR Scan
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PDF
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KMM53616000BK/BKG
KMM53616000BK/BKG
16Mx4
KMM53616000B
16Mx36bits
16Mx4bits
16Mx1bit
72-pin
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