16N50
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 16N50 Preliminary Power MOSFET 16 A, 500 V N-CHANNEL POWER MOSFET 1 DESCRIPTION The UTC 16N50 is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum on-state
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16N50
O-220F
16N50
O-220F2
QW-R502-532
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16N50P
Abstract: No abstract text available
Text: Advance Technical Information PolarHVTM HiPerFET Power MOSFET IXFA 16N50P IXFP 16N50P IXFH 16N50P VDSS ID25 RDS on trr N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 500
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16N50P
O-220
O-263
O-247
16N50P
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Untitled
Abstract: No abstract text available
Text: Photoelectric sensors OHDM 16N5001/S14 Diffuse sensors with background suppression dimension drawing 50 4 Pot LED * 34,5 50 4,3 8,5 4,3 12 30 4 15,4 25 M12 x 1 36 3 * emitter axis general data photo type background suppression light source pulsed red laser diode
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16N5001/S14
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Untitled
Abstract: No abstract text available
Text: Photoelectric sensors FHDM 16N5001/S14 Diffuse sensors with background suppression dimension drawing 50 4 Pot LED * 34 50 4,3 8,5 4,3 12 30 4 15,4 25 M12 x 1 36 3 * emitter axis general data photo type background suppression light source pulsed red LED sensing distance Tw
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16N5001/S14
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Untitled
Abstract: No abstract text available
Text: Photoelectric sensors FHDM 16N5001/S14 Diffuse sensors with background suppression dimension drawing 50 4 Pot LED * 34 50 4,3 8,5 4,3 12 30 4 15,4 25 M12 x 1 36 3 * emitter axis general data photo type background suppression light source pulsed red LED sensing distance Tw
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16N5001/S14
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Untitled
Abstract: No abstract text available
Text: Photoelectric sensors OHDM 16N5001/S14 Diffuse sensors with background suppression dimension drawing 50 4 Pot LED * 34,5 50 4,3 8,5 4,3 12 30 4 15,4 25 M12 x 1 36 3 * emitter axis general data photo type background suppression light source pulsed red laser diode
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16N5001/S14
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Untitled
Abstract: No abstract text available
Text: Photoelectric sensors FHDM 16N5004/S14 Diffuse sensors with background suppression dimension drawing 50 4 Pot LED * 34 50 4,3 8,5 4,3 12 30 4 15,4 25 M12 x 1 36 3 * emitter axis general data photo type background suppression light source pulsed red LED sensing distance Tw
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16N5004/S14
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Abstract: No abstract text available
Text: Photoelectric sensors FHDM 16N5004 Diffuse sensors with background suppression dimension drawing 50 4 Pot LED * 34 50 4,3 36 3 4,3 12 30 4 15,4 * emitter axis general data type photo background suppression light source pulsed red LED sensing distance Tw 20 . 600 mm
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16N5004
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Untitled
Abstract: No abstract text available
Text: Photoelectric sensors FHDM 16N5001/S14 Diffuse sensors with background suppression dimension drawing 50 4 Pot LED * 34 50 4,3 8,5 4,3 12 30 4 15,4 25 M12 x 1 36 3 * emitter axis general data photo type background suppression light source pulsed red LED sensing distance Tw
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16N5001/S14
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Untitled
Abstract: No abstract text available
Text: Photoelectric sensors FHDM 16N5004 Diffuse sensors with background suppression dimension drawing 50 4 Pot LED * 34 50 4,3 36 3 4,3 12 30 4 15,4 * emitter axis general data photo type background suppression light source pulsed red LED sensing distance Tw 20 . 600 mm
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16N5004
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Untitled
Abstract: No abstract text available
Text: Photoelectric sensors FHDM 16N5004/S14 Diffuse sensors with background suppression dimension drawing 50 4 Pot LED * 34 50 4,3 8,5 4,3 12 30 4 15,4 25 M12 x 1 36 3 * emitter axis general data photo type background suppression light source pulsed red LED sensing distance Tw
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16N5004/S14
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a8aa
Abstract: No abstract text available
Text: Optoelektronische Sensoren Photo electric sensors Cellules opto-électroniques Abmessungen Dimensions Dimensions OHDM 16N5001 Elektrischer Anschluss Connection diagram Schéma de raccordement BN 1 Í?*+Ã8ÂÂ*ÂPÎ *34,5 Z dark operate light operate 0V
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16N5001
2002/95/EC
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16n50
Abstract: 646V
Text: Advance Technical Information PolarHVTM HiPerFET Power MOSFET IXFA 16N50P IXFP 16N50P IXFH 16N50P VDSS ID25 = 500 V = 16 A Ω = 400 mΩ = 200 ns RDS on trr N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 175°C
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16N50P
16N50P
O-220
O-263
O-247
16n50
646V
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Abstract: No abstract text available
Text: Advanced Technical Information PolarHVTM Power MOSFET IXTA 16N50P IXTP 16N50P IXTQ 16N50P VDSS ID25 = 500 V = 16 A Ω = 400 mΩ RDS on N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ
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16N50P
16N50P
O-220
O-263
405B2
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Untitled
Abstract: No abstract text available
Text: Photoelectric sensors FHDM 16N5001/S14 Diffuse sensors with background suppression dimension drawing 50 4 Pot LED * 34 50 4,3 8,5 4,3 12 30 4 15,4 25 M12 x 1 36 3 * emitter axis general data type photo background suppression light source pulsed red LED sensing distance Tw
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16N5001/S14
prot34
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Untitled
Abstract: No abstract text available
Text: Photoelectric sensors FHDM 16N5001 Diffuse sensors with background suppression dimension drawing 50 4 Pot LED * 34 50 4,3 36 3 4,3 12 30 4 15,4 * emitter axis general data type photo background suppression light source pulsed red LED sensing distance Tw 20 . 450 mm
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16N5001
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Untitled
Abstract: No abstract text available
Text: Photoelectric sensors FHDM 16N5001 Diffuse sensors with background suppression dimension drawing 50 4 Pot LED * 34 50 4,3 36 4,3 12 30 4 15,4 3 * emitter axis general data photo type background suppression light source pulsed red LED sensing distance Tw 20 . 450 mm
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16N5001
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Untitled
Abstract: No abstract text available
Text: Photoelectric sensors OHDM 16N5001/S14 Diffuse sensors with background suppression dimension drawing 50 4 Pot LED * 34,5 50 4,3 8,5 4,3 12 30 4 15,4 25 M12 x 1 36 3 * emitter axis general data photo type background suppression light source pulsed red laser diode
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16N5001/S14
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Untitled
Abstract: No abstract text available
Text: Photoelectric sensors OHDM 16N5001 Diffuse sensors with background suppression dimension drawing 50 4 Pot LED * 34,5 50 4,3 36 4,3 12 30 4 15,4 3 * emitter axis general data photo type background suppression light source pulsed red laser diode sensing distance Tw
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16N5001
680nm
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 16N50 Power MOSFET 16 A, 500 V N-CHANNEL POWER MOSFET 1 DESCRIPTION TO-220F1 The UTC 16N50 is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum on-state
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16N50
O-220F1
16N50
O-220F2
QW-R502-532
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Untitled
Abstract: No abstract text available
Text: Photoelectric sensors FHDM 16N5004/S14 Diffuse sensors with background suppression dimension drawing 50 4 Pot LED * 34 50 4,3 8,5 4,3 12 30 4 15,4 25 M12 x 1 36 3 * emitter axis general data photo type background suppression light source pulsed red LED sensing distance Tw
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16N5004/S14
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Untitled
Abstract: No abstract text available
Text: Photoelectric sensors FHDM 16N5004 Diffuse sensors with background suppression dimension drawing 50 4 Pot LED * 34 50 4,3 36 4,3 12 30 4 15,4 3 * emitter axis general data photo type background suppression light source pulsed red LED sensing distance Tw 20 . 600 mm
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16N5004
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Untitled
Abstract: No abstract text available
Text: Photoelectric sensors FHDM 16N5001 Diffuse sensors with background suppression dimension drawing 50 4 Pot LED * 34 50 4,3 36 4,3 12 30 4 15,4 3 * emitter axis general data photo type background suppression light source pulsed red LED sensing distance Tw 20 . 450 mm
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16N5001
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Untitled
Abstract: No abstract text available
Text: Photoelectric sensors FHDM 16N5004/S14 Diffuse sensors with background suppression dimension drawing 50 4 Pot LED * 34 50 4,3 8,5 4,3 12 30 4 15,4 25 M12 x 1 36 3 * emitter axis general data photo type background suppression light source pulsed red LED sensing distance Tw
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16N5004/S14
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