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    Dinkle Enterprises DK16NC

    END COVER OF DK16N GRAY
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    DigiKey DK16NC Bulk 7,017 1
    • 1 $0.65
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    Alpha Wire MPG16 NC080

    CABLE GLAND 10-14MM PG16 BRASS
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    DigiKey MPG16 NC080 Bulk 299 1
    • 1 $11.37
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    Mouser Electronics MPG16 NC080 16
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    RS MPG16 NC080 Package 5 5 Weeks 1
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    TME MPG16 NC080 1
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    JW Winco Inc 16NC93/E

    PLASTIC STAR KNOB, STEEL HUB
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    DigiKey 16NC93/E Box 237 1
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    Alpha Wire MES16 NC080

    CABLE GLAND 5-10MM M16 BRASS
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    DigiKey MES16 NC080 Bulk 219 1
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    Mouser Electronics MES16 NC080
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    Newark MES16 NC080 Pack 1
    • 1 $102.13
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    TME MES16 NC080 1
    • 1 $70.02
    • 10 $62.24
    • 100 $54.46
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    JW Winco Inc 16NC53/EMT

    ALUMINUM STAR KNOB
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    DigiKey 16NC53/EMT Box 192 1
    • 1 $19.56
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    16NC Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: TM FQP6N40CF 400V N-Channel MOSFET Features Description • 6A, 400V, RDS on = 1.1 Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. • Low gate charge ( typical 16nC)


    Original     		PDF FQP6N40CF FQP6N40CF

    SFS4416

    Abstract: No abstract text available
    Text: SFS4416 SemiWell Semiconductor Logic N-Channel MOSFET Features • ■ ■ ■ Symbol Low RDS on (Max 0.018Ω )@VGS=10V D 5 4 G Low RDS(on) (Max 0.028Ω )@VGS=4.5V D 6 3 S Gate Charge (Typical 16nC) Maximum Junction Temperature Range (150°C) Available in Tape and Reel


    Original     		PDF SFS4416 DSFS4416 SFS4416

    SMK730

    Abstract: SMK730P 16nC
    Text: SMK730P Advanced N-Ch Power MOSFET SWITCHING REGULATOR APPLICATIONS Features •    PIN Connection High Voltage : BVDSS=400V Min. Low Crss : Crss=14pF(Typ.) Low gate charge : Qg=16nC(Typ.) Low RDS(on) : RDS(on)=1.0Ω(Max.) D G Ordering Information


    Original     		PDF SMK730P SMK730 O-220AB KSD-T0P027-002 SMK730 SMK730P 16nC

    Untitled

    Abstract: No abstract text available
    Text: STK730F Semiconductor Power MOSFET SWITCHING REGULATOR APPLICATIONS Features • • • • High Voltage: BVDSS=400V Min. Low Crss : Crss=8.4pF(Typ.) Low gate charge : Qg=16nC(Typ.) Low RDS(on) :RDS(on)=1.0Ω(Max.) Ordering Information Type NO. Marking STK730F


    Original     		PDF STK730F STK730 O-220F-3L KSD-T0O002-001

    smk 830

    Abstract: No abstract text available
    Text: SMK830D Advanced N-Ch Power MOSFET SWITCHING REGULATOR APPLICATIONS Features • • • • PIN Connection High Voltage : BVDSS=500V Min. Low Crss : Crss=33pF(Typ.) Low gate charge : Qg=16nC(Typ.) Low RDS(on) : RDS(on)=1.5Ω(Max.) D D G Ordering Information


    Original     		PDF SMK830D SMK830 O-252 KSD-T6O010-001 smk 830

    smk 830

    Abstract: No abstract text available
    Text: SMK830D Advanced N-Ch Power MOSFET Features • • • • PIN Connection High Voltage : BVDSS=500V Min. Low Crss : Crss=33pF(Typ.) Low gate charge : Qg=16nC(Typ.) Low RDS(on) : RDS(on)=1.5 (Max.) D D G Ordering Information Type N o. M a r k in g Pa ck a ge Code


    Original     		PDF SMK830D SMK830 O-252 KSD-T6O010-001 smk 830

    STK730P

    Abstract: No abstract text available
    Text: STK730P Semiconductor Power MOSFET SWITCHING REGULATOR APPLICATIONS Features • • • • High Voltage: BVDSS=400V Min. Low Crss : Crss=8.4pF(Typ.) Low gate charge : Qg=16nC(Typ.) Low RDS(on) :RDS(on)=1.0Ω(Max.) Ordering Information Type NO. Marking STK730P


    Original     		PDF STK730P STK730 O-220AB-3L KSD-T0P008-000 STK730P

    fqpf50n06

    Abstract: No abstract text available
    Text: QFET N-CHANNEL FQPF5N60 FEATURES BVDSS = 600V • Advanced New Design • Avalanche Rugged Technology • Rugged Gate Oxide Technology • Very Low Intrinsic Capacitances • Excellent Switching Characteristics • Unrivalled Gate Charge: 16nC Typ. • Extended Safe Operating Area


    Original     		PDF FQPF5N60 O-220F fqpf50n06

    Untitled

    Abstract: No abstract text available
    Text: Transistors IC SMD Type 600V N-Channel MOSFET KQB5N60 TO-263 Unit: mm 5.0A, 600 V. RDS ON = 2.0 1 .2 7 -0+ 0.1.1 Features @ VGS = 10 V Low gate charge (typical 16nC) +0.1 1.27-0.1 +0.2 4.57-0.2 100% avalanche tested 5 .2 8 -0+ 0.2.2 lmproved dv/dt capability


    Original     		PDF KQB5N60 O-263

    Untitled

    Abstract: No abstract text available
    Text: PD -97447 IRFH5304PbF HEXFET Power MOSFET VDS RDS on max (@VGS = 10V) Qg (typical) ID (@Tc(Bottom) = 25°C) 30 V 4.5 mΩ 16 nC 79 A PQFN 5X6 mm Applications • Control MOSFET for buck converters Features and Benefits Benefits Features Low charge (typical 16nC)


    Original     		PDF IRFH5304PbF IRFH5304TRPBF IRFH5304TR2PBF 041mH,

    16nC

    Abstract: 16-NC stk730
    Text: STK730PS Semiconductor Advanced N-Ch Power MOSFET SWITCHING REGULATOR APPLICATIONS Features • • • • PIN Connection High Voltage: BVDSS=400V Min. Low Crss : Crss=8.4pF(Typ.) Low gate charge : Qg=16nC(Typ.) Low RDS(on) :RDS(on)=1.0Ω(Max.) D G Ordering Information


    Original     		PDF STK730PS STK730PS STK730 O-220AB-3L KSD-T0O019-000 16nC 16-NC

    SMK830

    Abstract: SMK830D
    Text: SMK830D Semiconductor Advanced N-Ch Power MOSFET SWITCHING REGULATOR APPLICATIONS Features • • • • PIN Connection High Voltage: BVDSS=500V Min. Low Crss : Crss=33pF(Typ.) Low gate charge : Qg=16nC(Typ.) Low RDS(on) :RDS(on)=1.5Ω(Max.) D D G Ordering Information


    Original     		PDF SMK830D SMK830D SMK830 O-252 KSD-T6O010-000

    KP-69

    Abstract: mosfet 30V 18A TO 252 FDD24AN06LA0
    Text: FDD24AN06LA0_F085 N-Channel Logic Level PowerTrench MOSFET 60V, 36A, 24mΩ Features Applications • r DS ON = 20mΩ (Typ.), VGS = 5V, ID = 36A • Motor / Body Load Control • Qg(tot) = 16nC (Typ.), VGS = 5V • ABS Systems • Low Miller Charge • Powertrain Management


    Original     		PDF FDD24AN06LA0 O-252AA KP-69 mosfet 30V 18A TO 252

    SMK730P

    Abstract: SMK730 16NC
    Text: SMK730P Semiconductor Advanced N-Ch Power MOSFET SWITCHING REGULATOR APPLICATIONS Features • • • • PIN Connection High Voltage: BVDSS=400V Min. Low Crss : Crss=14pF(Typ.) Low gate charge : Qg=16nC(Typ.) Low RDS(on) :RDS(on)=1.0Ω(Max.) D G Ordering Information


    Original     		PDF SMK730P SMK730 O-220AB-3L KSD-T0P027-000 SMK730P SMK730 16NC

    FQP6N40CF

    Abstract: No abstract text available
    Text: FQP6N40CF 400V N-Channel MOSFET Features Description • 6A, 400V, RDS on = 1.1 Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. • Low gate charge ( typical 16nC)


    Original     		PDF FQP6N40CF FQP6N40CF

    Untitled

    Abstract: No abstract text available
    Text: FDD24AN06LA0_F085 N-Channel Logic Level PowerTrench MOSFET 60V, 36A, 24mΩ Features Applications • r DS ON = 20mΩ (Typ.), VGS = 5V, ID = 36A • Motor / Body Load Control • Qg(tot) = 16nC (Typ.), VGS = 5V • ABS Systems • Low Miller Charge • Powertrain Management


    Original     		PDF FDD24AN06LA0 O-252AA

    SMK830

    Abstract: No abstract text available
    Text: SMK830FC Advanced N-Ch Power MOSFET SWITCHING REGULATOR APPLICATIONS Features •    PIN Connection High Voltage : BVDSS=500V Min. Low Crss : Crss=33pF(Typ.) Low gate charge : Qg=16nC(Typ.) Low RDS(on) : RDS(on)=1.5Ω(Max.) D G Ordering Information


    Original     		PDF SMK830FC SMK830 O-220F-3L SDB20D45 KSD-T0O061-000 SMK830

    Untitled

    Abstract: No abstract text available
    Text: SMK830FZ Advanced N-Ch Power MOSFET SWITCHING REGULATOR APPLICATIONS Features •    PIN Connection High Voltage : BVDSS=500V Min. Low Crss : Crss=33pF(Typ.) Low gate charge : Qg=16nC(Typ.) Low RDS(on) : RDS(on)=1.5Ω(Max.) D G Ordering Information


    Original     		PDF SMK830FZ SMK830 O-220F-3L SDB20D45 KSD-T0O062-000

    stk0460

    Abstract: No abstract text available
    Text: STK0460F Semiconductor Advanced Power MOSFET SWITCHING REGULATOR APPLICATIONS Features • • • • High Voltage: BVDSS=600V Min. Low Crss : Crss=7.5pF(Typ.) Low gate charge : Qg=16nC(Typ.) Low RDS(on) :RDS(on)=2.5Ω(Max.) Ordering Information Type NO.


    Original     		PDF STK0460F STK0460 O-220F-3L KSD-T0O005-001 stk0460

    Untitled

    Abstract: No abstract text available
    Text: QFET N-CHANNEL FQP6N45 FEATURES BVDSS = 450V • Advanced New Design • Avalanche Rugged Technology • Rugged Gate Oxide Technology • Very Low Intrinsic Capacitances • Excellent Switching Characteristics • Unrivalled Gate Charge: 16nC Typ. • Extended Safe Operating Area


    Original     		PDF FQP6N45 O-220

    Untitled

    Abstract: No abstract text available
    Text: QFET N-CHANNEL FQP5N60 FEATURES BVDSS = 600V • Advanced New Design • Avalanche Rugged Technology • Rugged Gate Oxide Technology • Very Low Intrinsic Capacitances • Excellent Switching Characteristics • Unrivalled Gate Charge: 16nC Typ. • Extended Safe Operating Area


    Original     		PDF FQP5N60 O-220

    lf7a

    Abstract: No abstract text available
    Text: QFET N-CHANNEL FQB7N40, FQI7N40 FEATURES BV qss = 400V • Advanced New Design • Avalanche Rugged Technology • Rugged Gate Oxide Technology • Very Low Intrinsic Capacitances • Excellent Switching Characteristics • Unrivalled Gate Charge: 16nC Typ.


    OCR Scan     		PDF FQB7N40, FQI7N40 D2PAK/TO-263 D2PAK/TO-263 lf7a

    lf7a

    Abstract: FQB7N40 FQI7N40
    Text: QFET N-CHANNEL FQB7N40, FQI7N40 FEATURES BV qss = 400V Advanced New Design R ds ON = 0.78Î2 Avalanche Rugged Technology lD = 7.0A Rugged Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics d 2- p a k i 2- p a k Unrivalled Gate Charge: 16nC (Typ.)


    OCR Scan     		PDF FQB7N40, FQI7N40 DissipationTO-263 PAK/TO-263 lf7a FQB7N40 FQI7N40

    FQB5N60

    Abstract: FQI5N60
    Text: QFET N-CHANNEL FQB5N60, FQI5N60 FEATURES BV dss = 600V Advanced New Design R D S O N = 2 0 i 2 Avalanche Rugged Technology lD = 5.0A Rugged Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics d 2- p a k i 2- p a k Unrivalled Gate Charge: 16nC (Typ.)


    OCR Scan     		PDF FQB5N60, FQI5N60 B5N60, D2PAK/TO-263 PAK/TO-263 FQB5N60 FQI5N60