AH43308A-R17KU
Abstract: AH43308C-R18KU AH43308A-R21KU
Text: RoHS COMPLIANT AH43308 Series HF COMPLIANT 1. Features: • Ferrite based SMD Inductor with lower core loss at high frequency application. · Inductance Range:170nH to 370nH ,Custom values are welcomed. · High current output chokes, upto 71 Amp with max. 20% roll off.
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AH43308
170nH
370nH
AH43308x-R28LU
AH43308x-R37LU
AH43308A-R17KU
AH43308C-R18KU
AH43308A-R21KU
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Untitled
Abstract: No abstract text available
Text: SMT POWER INDUCTORS Power Beads - PA1320NL Series Current Rating: Over 50Apk Inductance Range: 170nH to 300nH Height: 6.5mm Max Footprint: 10.4mm x 8.0mm Max Electrical Specifications @ 25°C — Operating Temperature -40°C to +130°C 7 Inductance @0ADC nH ±20%
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PA1320NL
50Apk
170nH
300nH
PA1320
171NL
221NL
301NL
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DL47B3A
Abstract: GR-468-CORE dfb 10mw cw DWDM laser 1610
Text: 1 Technical Data Sheet February 2002 FIBEROPTICS DIVISION DL47B3A 2.5 Gbps 1550 nm Direct Modulation DFB Laser Module Features ¾ High-performance MQW DFB Laser ¾ Built-in TEC, Thermistor and Monitor PD ¾ 25Ω Input Impedance Matching ¾ Built-in Optical Isolator
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DL47B3A
14-pin
GR-468-CORE
OC-48/STM-16
DL47B3A
GR-468-CORE
dfb 10mw
cw DWDM laser 1610
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Untitled
Abstract: No abstract text available
Text: 40A Integrated PowIRstage FEATURES IR3552 DESCRIPTION • Peak efficiency up to 94.5% at 12VIN to 1.8VOUT, 93.3% at 1.2VOUT The IR3552 integrated PowIRstage contains a low quiescent current synchronous buck gate driver IC which is co-packed with control and synchronous
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IR3552
12VIN
IR3552
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chebyshev 3dB
Abstract: J32Z AN561 SD1563 702 Z TRANSISTOR 32CZ 00724 chebyshev 0.2dB
Text: AN561 APPLICATION NOTE WIDE BAND DESIGN OF PULSED POWER UHF AMPLIFIERS 1. REQUIRED. A pulsed power amplifier with the following specifications: minimum peak power of 250W at 435MHz, bandwidth of 30MHz 420 to 450MHz , maximum passband flatness of ±0.05dB, pulse width up to 1msec.,
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AN561
435MHz,
30MHz
450MHz)
50Ohms.
chebyshev 3dB
J32Z
AN561
SD1563
702 Z TRANSISTOR
32CZ
00724
chebyshev 0.2dB
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chebyshev 3dB
Abstract: transistor 81L AN561 SD1563 amplifier 250W
Text: AN561 APPLICATION NOTE WIDE BAND DESIGN OF PULSED POWER UHF AMPLIFIERS 1. REQUIRED. A pulsed power amplifier with the following specifications: minimum peak power of 250W at 435MHz, bandwidth of 30MHz 420 to 450MHz , maximum passband flatness of ±0.05dB, pulse width up to 1msec.,
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AN561
435MHz,
30MHz
450MHz)
50Ohms.
chebyshev 3dB
transistor 81L
AN561
SD1563
amplifier 250W
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DN4148
Abstract: 2N5109 spice power transistor bjt 1000 a 7432N 2n5109 transistor B9112 QN5109 TF011 bjt oscillator 2N5109
Text: New Models Simulate RF Circuits Its no news to those who simulate that the accuracy of SPICE is directly related to the accuracy of the models. What may be news is that simulation of high frequency circuits well into the gigahertz range is now possible due to the introduction of some new RF
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36E-13
111E-09
80E-08
82E-01
758E-12
822E-12
12E-13
40E-14
1E-14
40E-01
DN4148
2N5109 spice
power transistor bjt 1000 a
7432N
2n5109 transistor
B9112
QN5109
TF011
bjt oscillator
2N5109
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Untitled
Abstract: No abstract text available
Text: Dual Conductor, High Current Power Inductors HALOGEN HF Pb FREE Flat-Pac FPT705 Series Applications • Designed specifically for use with Picor Cool-Power® ZVS-Buck Regulator Family Picor part number Series PI33xx and PI34xx Environmental Data • Storage temperature range (component): -40°C to +125°C
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FPT705
PI33xx
PI34xx)
J-STD-020D
BU-SB13441
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI HVIGBT MODULES Revision: B Prepared by K.Kurachi Date I.Umezaki 24-Feb.-2009 CM400E2G-130H HIGH POWER SWITCHING USE INSULATED TYPE th 3 -Version HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules CM400E2G-130H IC ………………………
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24-Feb
CM400E2G-130H
HVM-1048-B
000A/Â
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CM400E4G-130H
Abstract: cm400e2
Text: MITSUBISHI HVIGBT MODULES Revision: B Prepared by K.Kurachi Date I.Umezaki 24-Feb.-2009 CM400E4G-130H th 3 -Version HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules HIGH POWER SWITCHING USE INSULATED TYPE CM400E4G-130H ● IC ………………………
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24-Feb
CM400E4G-130H
HVM-1049-B
CM400E4G-130H
cm400e2
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CM400E2G-130H
Abstract: cm400e CM400E2 P-20095
Text: 三菱半導体〈HVIGBTモジュール〉 CM400E2G-130H 大電力スイッチング用 絶縁形 3rd-Version HVIGBT High Voltage Insulated Gate Bipolar Transistor モジュール CM400E2G-130H ● IC . 400 A
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CM400E2G-130H
CM400E2G-130H
cm400e
CM400E2
P-20095
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI HVIGBT MODULES Revision: B Prepared by K.Kurachi Date I.Umezaki 24-Feb.-2009 CM400E2G-130H th 3 -Version HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules HIGH POWER SWITCHING USE INSULATED TYPE CM400E2G-130H ● IC ………………………
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24-Feb
CM400E2G-130H
HVM-1048-B
000A/Â
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cw DWDM laser 1610
Abstract: Samsung Electronics Company DFB DL47B3A GR-468-CORE connector SAMSUNG 30 PIN SAMSUNG DL47B3A
Text: 1 Technical Data Sheet August 2001 OPTOELECTRONICS DIVISION DL47B3A 2.5 Gbps 1550 nm Direct Modulation DFB Laser Module Features ¾ High-performance MQW DFB Laser ¾ Built-in TEC, Thermistor and Monitor PD ¾ 25Ω Input Impedance Matching ¾ Built-in Optical Isolator
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DL47B3A
14-pin
GR-468-CORE
OC-48/STM-16
cw DWDM laser 1610
Samsung Electronics Company DFB
DL47B3A
GR-468-CORE
connector SAMSUNG 30 PIN
SAMSUNG DL47B3A
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Untitled
Abstract: No abstract text available
Text: Product specification Philips Semiconductors Silicon Diffused Power Transistor BU2527AX GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of high resolution monitors. Features improved RBSOA performance and is suitable for
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BU2527AX
1E-06
1E-04
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TRANSISTORS 132 GD
Abstract: IRF150 kiv-8 IRF151 circuits of IRF150
Text: IRF150, IRF151, IRF152, IRF153 Semiconductor 33A and 40A, 60V and 100V, 0.055 and 0.08 Ohm, N-Channel Power MOSFETs October 1997 Features Description • 33A and 40A, 60V and 100V • High Input Impedance These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power
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IRF150,
IRF151,
IRF152,
IRF153
TA17421.
RF152,
RF153
TRANSISTORS 132 GD
IRF150
kiv-8
IRF151
circuits of IRF150
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Untitled
Abstract: No abstract text available
Text: ALPHA SEMICONDUCTOR AS34063 1E xcellen ce in A n alog P ow er P rod ucts 1.5A DC-to-DC Converter Control Circuits PRELIM INARY INFORM ATION FEATURES APPLICATIONS • • • • • • • • • • • • • • • Operation From 3.0V To 40V Input
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AS34063
MC34063/35063/33063
AS34063
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we-midcom
Abstract: PKG-0605 WE-MIDCOM transformer
Text: CUSTOMER TERMINAL Sn96%, Ag4% RoHS LEAD Pb — FREE Yes Yes m o re t h a n y o u e x p e c t W£ IVidcom DOT LOCATES TERM. #1 CHAMFER LOCATES TERM. #1 .539 MAX. [1 3.69 ] 1.272 MAX. [3 2.31 ] PARAMETER ►750311783 1.064 MAX. ‘ [2 7 .0 3 ] , TERM. N O .’s FOR REF. ONLY
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170nH
225nH
1875VAC,
1500VAC,
PKG-0605
we-midcom
PKG-0605
WE-MIDCOM transformer
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Untitled
Abstract: No abstract text available
Text: IRFP150 Semiconductor Data Sheet July 1999 40A, 100V, 0.055 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of
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IRFP150
O-247
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F941
Abstract: 2N6671 2N6673
Text: M I L —S —19500/536{USAF AMENDMENT 3 8 Sep tem b er 1987_ SUPERSËDING AMENDMENT 2 7 F e b r u a r y 1986 MILITARY SPECIFICATION SEMICONDUCTOR DEVI CE, TRANSISTOR, NPN, S I L I C O N , POWER TYPES 2N6671, AND 2N6673, JAN, JANTX, AND JANTXV This
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MIL-S-19500/536Ã
2N6671,
2N6673,
MIL-S-l9500/536
5961-F941)
F941
2N6671
2N6673
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AS34063
Abstract: MC34063 2A AS34063S 12 v to 5 v MC34063
Text: ALPHA SEMICONDUCTOR AS34063 1E x ce lle n ce in A n a lo g P o w e r P ro d u c ts 1.5A DC-to-DC Converter Control Circuits PRELIM INARY INFORM ATION FEATURES APPLICATIONS • • • • • • • • • • • • • • • Operation From 3.0V To 40V Input
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AS34063
MC34063/35063/33063
AS34063
910mA
MC34063 2A
AS34063S
12 v to 5 v MC34063
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IRFP150
Abstract: IRFP RE 40
Text: H a r r IRFP150, IRFP151, IRFP152, IRFP153 i s S E M I C O N D U C T O R 34A and 40A, 60V and 100V, 0.055 and 0.08 Ohm, N-Channel Power MOSFETs July 1998 Features Description • 34A and 40A, 60V and 100V • High Input Impedance These are N-Channel enhancement mode silicon gate
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IRFP150,
IRFP151,
IRFP152,
IRFP153
TA170,
RFP153
IRFP150
IRFP RE 40
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diode 4483
Abstract: IRFP150R irfp 350 n 4484 MOSfet
Text: IRFP150/151/152/153 IRFP150R/1 51R /152R/153R 23 HARRIS N-Channel Power MOSFETs Avalanche Energy Rated* August 1991 Package Features T O -2 4 7 • 34A and 40A, 60V - 100V TOP VIEW • r0S on = 0.055£1 and 0 .0 8 fl DRAIN (T A B ) • Single Pulse Avalanche Energy Rated*
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IRFP150/151/152/153
IRFP150R/1
/152R/153R
IRFP150,
IRFP151,
IRFP152,
IRFP153
IRFP150R,
IRFP151R,
IRFP152R,
diode 4483
IRFP150R
irfp 350 n
4484 MOSfet
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