ir10 diode
Abstract: OPD2020 839 DIODE
Text: OPD2020 Silicon PIN Photo Diode HIGH SPEED SENSITIVITY unit : ㎛ 1. Structure 1.1 Chip Size : 2.00mm X 2.00mm 1.2 Chip thickness : 400±20um 1.3 Metallization : Top - Al, Bottom - Au 1.4 Passivation : Silicon Oxide 1.5 Bonding Pad Size - Anode top : 170um X 170um
|
Original
|
PDF
|
OPD2020
170um
170um
000Lux
ir10 diode
OPD2020
839 DIODE
|
Untitled
Abstract: No abstract text available
Text: OPD2020 Silicon PIN Photo Diode HIGH SPEED SENSITIVITY 1. Structure 1.1 Chip Size : 2.00mm X 2.00mm 1.2 Chip thickness : 400 20um 1.3 Metallization : Top - Al, Bottom - Au 1.4 Passivation : Silicon Oxide 1.5 Bonding Pad Size - Anode top : 170um X 170um 1.6 Active Area : 1.72mm X 1.72mm
|
Original
|
PDF
|
OPD2020
170um
170um
000Lux
|
Bond
Abstract: power amplifier mmic
Text: FMM5829X K-Band Power Amplifier MMIC FEATURES •High Output Power; P1dB = 31 dBm Typ. •High Linear Gain; GL = 23 dB(Typ.) •Frequency Band ; 21.0 - 27.0 GHz •High Linearity ; OIP3 = 39dBm •Impedance Matched Zin/Zout = 50Ω DESCRIPTION The FMM5829X is a power amplifier MMIC that contains a four
|
Original
|
PDF
|
FMM5829X
39dBm
FMM5829X
Bond
power amplifier mmic
|
NJU6855
Abstract: No abstract text available
Text: NJU6855 TENTATIVE 160COMMON x 128RGB LCD DRIVER FOR 65,536-COLOR STN DISPLAY GENERAL DESCRIPTION PACKAGE The NJU6855 is a 160COMMONx128RGB LCD driver for 65,536-color STN display. It contains common drivers, RGB drivers, a serial and a parallel MPU interface circuit, an internal LCD power supply,
|
Original
|
PDF
|
NJU6855
160COMMON
128RGB
536-COLOR
NJU6855
160COMMONx128RGB
680-bit
64x32x32)
|
bryan adams
Abstract: fg wilson generator prbs using lfsr hyperlynx dell monitor circuit diagram led based graphic equalizer ic matlab Seminar Microwave PIN diode spice 750um Design Seminar Signal Transmission
Text: DesignCon 2007 Pre-Emphasis and Equalization Parameter Optimization with Fast, WorstCase/Multibillion-Bit Verification Andy Turudic, Altera Corporation aturudic@altera.com Steven McKinney, Mentor Graphics Steven_McKinney@mentor.com Vladimir Dmitriev-Zdorov
|
Original
|
PDF
|
CP-01021-1
bryan adams
fg wilson generator
prbs using lfsr
hyperlynx
dell monitor circuit diagram
led based graphic equalizer ic
matlab Seminar
Microwave PIN diode spice
750um
Design Seminar Signal Transmission
|
Untitled
Abstract: No abstract text available
Text: EMM5840X K-Band Power Amplifier MMIC FEATURES •High Output Power; P1dB = 31 dBm Typ. •High Linear Gain; GL = 25 dB(Typ.) •Frequency Band ; 21.0 - 27.0 GHz •High Linearity ; OIP3 = 39dBm •Impedance Matched Zin/Zout = 50Ω Device photo DESCRIPTION
|
Original
|
PDF
|
EMM5840X
39dBm
EMM5840X
|
SM980
Abstract: No abstract text available
Text: Products & Services 2015 FIBERCORE FIBERCORE Contents SECTION SECTION PAGE 1 About Fibercore Which fiber for which application? 6 - 11 2 SM Fiber for Harsh Environments, Ultra Bend Insensitive, RGB and Near Infra Red SM Fiber For Visible RGB Through To Near IR
|
Original
|
PDF
|
10685-B
SM980
|
EMM5840X
Abstract: Harbour Industries UTC 393
Text: EMM5840X K-Band Power Amplifier MMIC FEATURES •High Output Power; P1dB = 31 dBm Typ. •High Linear Gain; GL = 25 dB(Typ.) •Frequency Band ; 21.0 - 27.0 GHz •High Linearity ; OIP3 = 39dBm •Impedance Matched Zin/Zout = 50Ω Device photo DESCRIPTION
|
Original
|
PDF
|
EMM5840X
39dBm
EMM5840X
Harbour Industries
UTC 393
|
WLCSP flip chip
Abstract: WLCSP smt 0.3mm pitch csp package wlcsp inspection WLCSP chip mount WLCSP PBO design amkor flip amkor RDL amkor polyimide system in package WLCSP underfill
Text: data sheet wafer level packaging WLCSP Features • 4 - 196 ball count • 0.8 mm – 6.5 mm body size • Repassivation, Redistribution and Bumping options available • Electroplated and Ball-loaded bumping options • Eutectic and Lead-free solder • Standard JEDEC / EIAJ pitches and CSP solder ball diameters
|
Original
|
PDF
|
|
power amplifier mmic
Abstract: No abstract text available
Text: FMM5829X K-Band Power Amplifier MMIC FEATURES •High Output Power; P1dB = 31 dBm Typ. •High Linear Gain; GL = 23 dB(Typ.) •Frequency Band ; 21.0 - 27.0 GHz •High Linearity ; OIP3 = 39dBm •Impedance Matched Zin/Zout = 50Ω Device photo DESCRIPTION
|
Original
|
PDF
|
FMM5829X
39dBm
FMM5829X
power amplifier mmic
|
SMD 6 PIN IC FOR PWM
Abstract: smd diode F6 Diode smd f6 SMD F6 DIODE 6 PIN PWM SMD smd diode B3 CDC5D23-100 LM2612 LM2612ABP LM2612ABPX
Text: ご注意：この日本語データシートは参考資料として提供しており内容 が最新でない場合があります。製品のご検討およびご採用に際 しては、必ず最新の英文データシートをご確認ください。
|
Original
|
PDF
|
400mA
LM2612
300mA)
600kHz
500kHz
600kHz
SMD 6 PIN IC FOR PWM
smd diode F6
Diode smd f6
SMD F6 DIODE
6 PIN PWM SMD
smd diode B3
CDC5D23-100
LM2612ABP
LM2612ABPX
|
MSR 750
Abstract: MSR-2N
Text: TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / 978 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com RADIATION HARDENED N-CHANNEL MOSFET Reference MIL-PRF-19500/603 DEVICES LEVELS 2N7268 2N7268U MSR (100K RAD(Si)
|
Original
|
PDF
|
MIL-PRF-19500/603
2N7268
2N7268U
12Vdc,
T4-LDS-0121
MIL-PRF-19500/603
MSR2N7268
MSF2N7268
MSR 750
MSR-2N
|
JANSR2N7382
Abstract: No abstract text available
Text: TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / 978 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com RADIATION HARDENED P-CHANNEL MOSFET Qualified per MIL-PRF-19500/615 DEVICES LEVELS 2N7382 JANSM (3K RAD(Si) JANSD (10K RAD(Si)
|
Original
|
PDF
|
MIL-PRF-19500/615
2N7382
155um
1884MeV
T4-LDS-0125
JANSM2N7382,
JANSD2N7382,
JANSR2N7382
JANSF2N7382
JANSR2N7382
|
EMM5078X
Abstract: EMM5078 ED-4701
Text: Preliminary ES/EMM5078X C-Band Power Amplifier MMIC FEATURES •Output Power; P1dB = 26 dBm Typ. •High Gain; GL = 30 dB(Typ.) •Wide Frequency Band ; 3.4 – 8.5 GHz •Impedance Matched Zin/Zout = 50Ω DESCRIPTION The ES/EMM5078X is a wide band power amplifier MMIC that
|
Original
|
PDF
|
ES/EMM5078X
ES/EMM5078X
1906B,
EMM5078X
EMM5078
ED-4701
|
|
|
Untitled
Abstract: No abstract text available
Text: EMM5078X C-Band Power Amplifier MMIC FEATURES •High Output Power: Pout = 26 dBm Typ. •High Linear Gain: GL = 30 dB(Typ.) •Broad Band: 3.4 – 8.5 GHz •Impedance Matched Zin/Zout = 50Ω DESCRIPTION The EMM5078X is a wide band power amplifier MMIC that
|
Original
|
PDF
|
EMM5078X
EMM5078X
COND0158
1906B,
|
TZBX4Z060-110
Abstract: TZBX4Z250-110 TZ03R300-169 TZ03Z100-169 TZ03R200-169 TZBX4Z030-110 TZBX4 TZVY2Z030A110 TZ03T200-169 TZBX4R200-110
Text: このカタログはNo.T13-4をムラタのwebサイトよりPDF形式でダウンロードしたものです。 T13J4.pdf 99.8.23 セラミックトリマコンデンサ CERAMIC TRIMMER CAPACITOR Cat.No.T13-4 このカタログはNo.T13-4をムラタのwebサイトよりPDF形式でダウンロードしたものです。
|
Original
|
PDF
|
T13-4webPDF
T13J4
T13-4
TZS02
TZV02
TZC03
TZBX4Z060-110
TZBX4Z250-110
TZ03R300-169
TZ03Z100-169
TZ03R200-169
TZBX4Z030-110
TZBX4
TZVY2Z030A110
TZ03T200-169
TZBX4R200-110
|
TZ03
Abstract: smd marking A00 63sn37pb
Text: !お願い ・当PDFカタログは株式会社村田製作所のウェブサイトからダウンロードされたものです。記載内容について、改良のため予告なく変更することや供給を停止することがございますので、ご注文に際してはご確認ください。
|
Original
|
PDF
|
T13-10
KMBT050
KMBT060
KMBT020
KMBT040
JB-1825
KMBT010
TZ03
smd marking A00
63sn37pb
|
KMDR050
Abstract: smd marking A00 K450 TZ03 Marking z100 ABE smd
Text: !注 请阅读本产品目录中的产品规格，以及有关保管使用环境、规格上的注意事项、装配时的注意事项、使用时的注意事项的!注意事项，以免发生冒烟和（或）燃烧等。 本目录因没有足够的空间说明详细规格，仅载明标准特性。因此，在订购产品之前，谨请核准其规格或者办理产品规格表。
|
Original
|
PDF
|
180mm)
330mm)
N150ppm/
N200ppm/
N450ppm/
N750ppm/
BS222
KMDR050
smd marking A00
K450
TZ03
Marking z100
ABE smd
|
kvp 42 DIODE
Abstract: SM 5126 BP
Text: Data Sheet S6D0144 Preliminary 128-RGB X 160-DOT SINGLE CHIP DRIVER IC WITH INTERNAL GRAM FOR 262,144 Colors TFT-LCD January 6, 2006 Ver. 0.7 Prepared by Checked by Approved by Hak-Seong. Lee hakseong.lee@samsung.com Byoung-Ha, Kim Yhong-Deug, Ma yd.ma@samsung.com
|
Original
|
PDF
|
S6D0144
128-RGB
160-DOT
bhkim21
144-COLOR
S6D0144
kvp 42 DIODE
SM 5126 BP
|
2N7261
Abstract: No abstract text available
Text: TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / 978 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com RADIATION HARDENED N-CHANNEL MOSFET Reference MIL-PRF-19500/601 DEVICES LEVELS 2N7261 2N7261U MSR (100K RAD(Si)
|
Original
|
PDF
|
MIL-PRF-19500/601
2N7261
2N7261U
12Vdc,
T4-LDS-0119
MIL-PRF-19500/601
MSR2N7261
MSF2N7261
2N7261
|
NJU6855
Abstract: D1497 d1292 128-RGB 128RGB trw cpu 721748 ILI 5960
Text: NJU6855 暫定資料 160 コモンx コモン×128ＲＧＢ ＲＧＢ 65,536 色カラーSTN ビットマップ LCD ドライバ カラー 概要 外形 NJU6855 は160 コモン×128RGB 65,536 色 カラーSTN ビッ トマップ LCD ドライバです。384 セグメント（128RGB）ドライ
|
Original
|
PDF
|
NJU6855
NJU6855
128RGB
128RGB
SEGA0-SEGA127,
SEGB0-SEGB127,
SEGC0-SEGC127)
COM0-COM159)
D1497
d1292
128-RGB
trw cpu
721748
ILI 5960
|
2n7382
Abstract: 2n7389 p-channel Mosfet 110A JANSF2N7382 JANSR2N7382 P-channel
Text: TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / 978 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com RADIATION HARDENED P-CHANNEL MOSFET Qualified per MIL-PRF-19500/615 DEVICES LEVELS 2N7382 JANSM (3K RAD(Si) JANSD (10K RAD(Si)
|
Original
|
PDF
|
MIL-PRF-19500/615
2N7382
155um
1884MeV
T4-LDS-0125
JANSM2N7382,
JANSD2N7382,
JANSR2N7382
JANSF2N7382
2n7382
2n7389
p-channel Mosfet 110A
JANSF2N7382
JANSR2N7382
P-channel
|
TGS8422
Abstract: TGS8422-SCC
Text: Product Data Sheet May 10, 2001 SP4T FET Switch TGS8422-SCC Key Features and Performance • • • • • • DC to18 GHz Frequency Range 2.5 dB Insertion Loss at Midband 37 dB Isolation at Midband Typical Input Power of 19 dBm at 1 dB Gain Compression
|
Original
|
PDF
|
TGS8422-SCC
TGS8422-SCC
25-mil-length
TGS8422
|
NVIDIA GeForce 8800 GTX
Abstract: LM 7448 8800 gtx LM3431MH NVIDIA 8800 nvidia geforce 8800 geforce NVIDIA GPU NVIDIA bga nvidia
Text: エネルギー効率に優れたアナログ IC が創る新たな世界 www.national.com /jpn 50 年の歴史の中で培ってきた革新的なアナログ技術を活用し LED ライティング ナショナル セミコンダクターは、エレクトロニクス･システム向けに、
|
Original
|
PDF
|
CSP-9-111C2
SpecificationCSP-9-111S2
CSP-9-111S2
NVIDIA GeForce 8800 GTX
LM 7448
8800 gtx
LM3431MH
NVIDIA 8800
nvidia geforce 8800
geforce
NVIDIA GPU
NVIDIA
bga nvidia
|