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    177 TRANSISTOR DATASHEET Search Results

    177 TRANSISTOR DATASHEET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    177 TRANSISTOR DATASHEET Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BD175

    Abstract: No abstract text available
    Text: BD175/177/179 BD175/177/179 Medium Power Linear and Switching Applications • Complement to BD 176/178/180 respectively TO-126 1 1. Emitter 2.Collector 3.Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol


    Original     		PDF BD175/177/179 O-126 BD175 BD177 BD179 BD179 BD175

    equivalent bd177

    Abstract: BD175 BD177 BD179
    Text: BD175/177/179 BD175/177/179 Medium Power Linear and Switching Applications • Complement to BD 176/178/180 respectively TO-126 1 1. Emitter 2.Collector 3.Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol


    Original     		PDF BD175/177/179 O-126 BD175 BD177 BD179 equivalent bd177 BD175 BD177 BD179

    bd175

    Abstract: bd177
    Text: BD175/177/179 BD175/177/179 Medium Power Linear and Switching Applications • Complement to BD 176/178/180 respectively TO-126 1. Emitter 2.Collector 3.Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO


    Original     		PDF BD175/177/179 O-126 BD175 BD177 BD179 BD179 bd175 bd177

    transistor bd176

    Abstract: BD176 BD178 BD180 transistor BD 325
    Text: BD176/178/180 BD176/178/180 Medium Power Linear and Switching Applications • Complement to BD 175/177/179 respectively TO-126 1 1. Emitter 2.Collector 3.Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol


    Original     		PDF BD176/178/180 O-126 BD176 BD178 BD180 transistor bd176 BD176 BD178 BD180 transistor BD 325

    BD176

    Abstract: transistor bd176
    Text: BD176/178/180 BD176/178/180 Medium Power Linear and Switching Applications • Complement to BD 175/177/179 respectively TO-126 1 1. Emitter 2.Collector 3.Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol


    Original     		PDF BD176/178/180 O-126 BD176 BD178 BD180 BD180 BD176 transistor bd176

    BD178

    Abstract: BD176 BD180 transistor bd176
    Text: BD176/178/180 BD176/178/180 Medium Power Linear and Switching Applications • Complement to BD 175/177/179 respectively TO-126 1 1. Emitter 2.Collector 3.Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol


    Original     		PDF BD176/178/180 O-126 BD176 BD178 BD180 BD178 BD176 BD180 transistor bd176

    BD178

    Abstract: BD176 BD180
    Text: BD176/178/180 BD176/178/180 Medium Power Linear and Switching Applications • Complement to BD 175/177/179 respectively TO-126 1 1. Emitter 2.Collector 3.Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol


    Original     		PDF BD176/178/180 O-126 BD176 BD178 BD180 BD178 BD176 BD180

    Untitled

    Abstract: No abstract text available
    Text: BD176/178/180 BD176/178/180 Medium Power Linear and Switching Applications • Complement to BD 175/177/179 respectively TO-126 1 1. Emitter 2.Collector 3.Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol


    Original     		PDF BD176/178/180 O-126 BD176 BD178 BD180 BD180

    Untitled

    Abstract: No abstract text available
    Text: PD54003-E RF power transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs Datasheet — production data Features • Excellent thermal stability ■ Common source configuration ■ POUT = 3 W with 12 dB gain @ 500 MHz ■ New RF plastic package


    Original     		PDF PD54003-E PowerSO-10RF PowerSO-10RF.

    Untitled

    Abstract: No abstract text available
    Text: PD54003-E RF power transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs Datasheet — production data Features • Excellent thermal stability ■ Common source configuration ■ POUT = 3 W with 12 dB gain @ 500 MHz ■ New RF plastic package


    Original     		PDF PD54003-E PowerSO-10RF PowerSO-10RF.

    Untitled

    Abstract: No abstract text available
    Text: J174 / J175 / J176 / J177 / MMBFJ175 / 176 / 177 MMBFJ175 MMBFJ176 MMBFJ177 J174 J175 J176 J177 G S S G TO-92 D SOT-23 D Mark: 6W / 6X / 6Y NOTE: Source & Drain are interchangeable P-Channel Switch This device is designed for low level analog switching sample and hold


    Original     		PDF MMBFJ175 MMBFJ175 MMBFJ176 MMBFJ177 OT-23

    j174 transistor

    Abstract: J175 J174 J176 J177 MMBFJ175 MMBFJ176 MMBFJ177 J175 transistor transistor j175
    Text: J174 / J175 / J176 / J177 / MMBFJ175 / 176 / 177 MMBFJ175 MMBFJ176 MMBFJ177 J174 J175 J176 J177 G S S G TO-92 D SOT-23 D Mark: 6W / 6X / 6Y NOTE: Source & Drain are interchangeable P-Channel Switch This device is designed for low level analog switching sample and hold


    Original     		PDF MMBFJ175 MMBFJ175 MMBFJ176 MMBFJ177 OT-23 j174 transistor J175 J174 J176 J177 MMBFJ176 MMBFJ177 J175 transistor transistor j175

    j177 TRANSISTOR

    Abstract: J176 J176. P-CHANNEL. TO-92 J174 J175 J177 MMBFJ175 MMBFJ176 MMBFJ177 J177 TO-92
    Text: J174 / J175 / J176 / J177 / MMBFJ175 / 176 / 177 MMBFJ175 MMBFJ176 MMBFJ177 J174 J175 J176 J177 G S S G TO-92 D SOT-23 D Mark: 6W / 6X / 6Y NOTE: Source & Drain are interchangeable P-Channel Switch This device is designed for low level analog switching sample and hold


    Original     		PDF MMBFJ175 MMBFJ175 MMBFJ176 MMBFJ177 OT-23 j177 TRANSISTOR J176 J176. P-CHANNEL. TO-92 J174 J175 J177 MMBFJ176 MMBFJ177 J177 TO-92

    transistor RJp 30

    Abstract: mo-229 pad layout transistor RJp MO-229 MO-220-wgge RJP PRODUCT jedec package MO-220 QFN 20 MO-220 Rjc jedec package MO-220 for qfn JESD51-5
    Text: Product Information Package Thermal Characteristics This document provides test information about the standard packages offered by Allegro MicroSystems. The data given is intended as a general reference only and is based on certain simplifications such as constant chip size and standard


    Original     		PDF

    PT100 Thermocouple Amplifier op07

    Abstract: intersil voltmeter IRLL014 IRLL014N rtd pt100 sensor thin film PANASONIC VS SERIES transmitter pt100 LT1490A 1N829 LM399
    Text: Voltage Reference Application and Design Note Application Note June 23, 2005 AN177.0 Author: Alan Rich Table of Contents What and Why is a Voltage Reference? . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2


    Original     		PDF AN177 PT100 Thermocouple Amplifier op07 intersil voltmeter IRLL014 IRLL014N rtd pt100 sensor thin film PANASONIC VS SERIES transmitter pt100 LT1490A 1N829 LM399

    transistor 91 330

    Abstract: Circuit diagram of LDR ldr 10k SM8143 NIPPON CAPACITORS ldr resistor small ldr 2 pins datasheet 1SS370 SM8143A vsop 16
    Text: SM8143 Application Note EL Driver IC OVERVIEW The SM8143 has independent inductor drive oscillator circuit OCL and EL drive oscillator circuit (OCE) built-in. Accordingly, the frequency of oscillation can be individually changed to control the brightness, current consumption, and frequency over a wide range.


    Original     		PDF SM8143 SM8143 NK0001CE transistor 91 330 Circuit diagram of LDR ldr 10k NIPPON CAPACITORS ldr resistor small ldr 2 pins datasheet 1SS370 SM8143A vsop 16

    transistor 91 330

    Abstract: NIPPON CAPACITORS
    Text: SM8143 NIPPON PRECISION CIRCUITS INC. Application Note EL Driver IC OVERVIEW The SM8143 has independent inductor drive oscillator circuit OCL and EL drive oscillator circuit (OCE) built-in. Accordingly, the frequency of oscillation can be individually changed to control the brightness, current consumption, and frequency over a wide range.


    Original     		PDF SM8143 NK0001BE CIRCUITS--19 transistor 91 330 NIPPON CAPACITORS

    transistor 91 330

    Abstract: toko 10k coil ldr 10k NIPPON CAPACITORS 1SS370 SM8143 SM8143A
    Text: SM8143 NIPPON PRECISION CIRCUITS INC. Application Note EL Sheet Driver IC OVERVIEW The SM8143 has independent coil drive oscillator circuit OCL and EL drive oscillator circuit (OCE) built-in. Accordingly, the frequency of oscillation can be individually changed to control the brightness, current consumption, and frequency over a wide range.


    Original     		PDF SM8143 SM8143 80cm2 NK0001AE CIRCUITS--19 transistor 91 330 toko 10k coil ldr 10k NIPPON CAPACITORS 1SS370 SM8143A

    sanyo os-con sp

    Abstract: sanyo WG capacitors sanyo capacitor wg Nichicon WEEK CODE 10SP470M UPM1C471MPH6 C3225X5R0J107MT diode wg smt sanyo capacitor SE wg UWG1A471MNR1GS
    Text: NEW Product PTHxx010Y DDR Converter Application Note 177 1. Introduction 2 Packaging Labeling and Part Numbering Sequence 2. System Interface Information Input Capacitor Output Capacitance Optional Tantalum Capacitors Ceramic Capacitors Capacitor Table Designing for Very Fast Load Transients


    Original     		PDF PTHxx010Y sanyo os-con sp sanyo WG capacitors sanyo capacitor wg Nichicon WEEK CODE 10SP470M UPM1C471MPH6 C3225X5R0J107MT diode wg smt sanyo capacitor SE wg UWG1A471MNR1GS

    Untitled

    Abstract: No abstract text available
    Text: BD176/178/180 PNP EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS • Complement to BD 175/177/179 respectively ABSOLUTE MAXIMUM RATINGS C haracteristic ‘ Collector Base Voltage : BD176 : BD178 : BD180 Collector Emitter Voltage


    OCR Scan     		PDF BD176/178/180 BD176 BD178 BD180 BD176 BD178

    bd177

    Abstract: BD175
    Text: BD175/177/179 NPN EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS • Complement to BD 176/178/180 respectively ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Rating Unit 45 V BD177 60 V BD179 80 V 45 V BD177 60 V BD179 80 V BD175


    OCR Scan     		PDF BD175/177/179 BD175 BD177 BD179

    SVI 3104 c

    Abstract: UPC1678G ne333 stb 1277 TRANSISTOR equivalent transistor bf 175 NE85635 packaging schematic NE72000 VC svi 3104 NE9000 NE720
    Text: Introduction Small Signal GaAs FETs Power GaAs FETs Small Signal Silicon Bipolar Transistors Power Silicon Bipolar Transistors Silicon Monolithic Circuits GaAs Monolithic Circuits Reliability Assurance Appendix This C atalog is printed on R ecycled Paper California Eastern Laboratories, Inc. reserves the right to make changes to the products or


    OCR Scan     		PDF AN83301-1 NE24615 AN83302 AN83303-1 NE71083 NE70083 AN83901 AN85301 11/86-LN AN86104 SVI 3104 c UPC1678G ne333 stb 1277 TRANSISTOR equivalent transistor bf 175 NE85635 packaging schematic NE72000 VC svi 3104 NE9000 NE720

    BSX19 equivalent

    Abstract: BC350 bc107 BFW63 bcw17 SHORT DATA ON 2N744 transistor BC287 2N3020 BC451 2N2868
    Text: TABLE OF CONTENTS INTRODUCTION ALPHANUMERICAL INDEX PRODUCT GUIDE SELECTION GUIDE CROSS REFERENCE HANDLING PRECAUTION QUALITY SURFACE MOUNTING CASE: SOT-23 DATASHEETS PACKAGES Page 4 5 7 9 14 24 25 30 35 419 INTRODUCTION This databook contains datasheets covering the range of discrete devices for small


    OCR Scan     		PDF OT-23 BSX19 equivalent BC350 bc107 BFW63 bcw17 SHORT DATA ON 2N744 transistor BC287 2N3020 BC451 2N2868

    CHY17f-2

    Abstract: CHY17F-1 CNY17F-3 CNY17F-2 CHY17 CNY17F3 transistor 2z
    Text: M QUALITY •[TECHNOLOGIES VDE APPROVED ph o to tr a h sisto r o pto c o u pler s CNY17F1/1Z CNY17F2/2Z CNY17F3/3Z d e s c r ip t io n p a c k a g e d im e m s io h s [ft rft The CNY17 series consists o f a Gallium Arsenide IRED coupled w ith an NPN phototransistor.


    OCR Scan     		PDF CNY17F1/1Z CNY17F2/2Z CNY17F3/3Z CNY17 CNY17F1: CNY17F2: CNY17F3: E50151 C2090 CHY17F1/1Z CHY17f-2 CHY17F-1 CNY17F-3 CNY17F-2 CHY17 CNY17F3 transistor 2z