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KEMET Corporation PHG491NE7200J Phg4910Jv \|Kemet PHG491NE7200J
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Newark	PHG491NE7200J	Bulk			25	1 - 10 - 100 $72.63 1000 $72.63 10000 $72.63	Buy Now
NEC Electronics Group NE72084-SL
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Bristol Electronics	NE72084-SL		37			1 - 10 - 100 - 1000 - 10000 -	Get Quote

NE720 Datasheets (5)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
NE720		DB Lectro	Magnet latching relay.		Original	PDF
NE72084		California Eastern Laboratories	TRANSISTOR,MESFET,N-CHAN,5V V(BR)DSS,MICRO-X		Scan	PDF
NE720AZDC12V		DB Lectro	Magnet latching relay.		Original	PDF
NE720AZDC6V		DB Lectro	Magnet latching relay.		Original	PDF
NE720BZDC6V		DB Lectro	Magnet latching relay.		Original	PDF

NE720 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
relay 240VAC, IEC255 Abstract: IEC255 NE720 IEC255-5 2kV relay iec255 relay IEC255-7 IEC68-2-27 23000VA DSA00508905.txt Text: N E 7 2 0 CH0054066—2000 60x40×22 Features Magnet latching relay. High sensitivity & reliability. Well anti-shock and anti-vibration. Heavy contact load. Ordering Information NE720 A Z DC12V 1 2 3 4 1 Part number：NE720 2 Contact arrangement：A:1A；B:1B	Original	CH0054066--2000 NE720 DC12V numberNE720 100Amax/240VAC 23000VA 2300VA 400VAC IEC255-7 relay 240VAC, IEC255 IEC255 IEC255-5 2kV relay iec255 relay IEC255-7 IEC68-2-27 DSA00508905.txt	PDF
2SC3355 SPICE MODEL Abstract: transistor C2003 C319B MGF1412 RF TRANSISTOR 10GHZ MRF134 rf model .lib file 2SK571 MGF1402 MRF9331 pb_hp_at41411_19921101 Text: Vendor Component Libraries RF Transistor Library May 2003 Notice The information contained in this document is subject to change without notice. Agilent Technologies makes no warranty of any kind with regard to this material, including, but not limited to, the implied warranties of merchantability and fitness	Original	F2002: F2003: F2004: 2SC3355 SPICE MODEL transistor C2003 C319B MGF1412 RF TRANSISTOR 10GHZ MRF134 rf model .lib file 2SK571 MGF1402 MRF9331 pb_hp_at41411_19921101	PDF
NE25139 Abstract: ne720b transistor marking U72 ghz NE25139-T1 NE25139U71 NE720 NE25139T1U74 NE25139T1U71 16E-13 Text: GENERAL PURPOSE DUAL-GATE GaAS MESFET FEATURES NE25139 POWER GAIN AND NOISE FIGURE vs. DRAIN TO SOURCE VOLTAGE • SUITABLE FOR USE AS RF AMPLIFIER IN UHF TUNER GPS 10 • HIGH GPS: 20 dB TYP AT 900 MHz • LOW NF: 1.1 dB TYP AT 900 MHz • LG1 = 1.0 µm, LG2 = 1.5 µm, WG = 400 µm	Original	NE25139 NE251 NE25139T1U74 24-Hour NE25139 ne720b transistor marking U72 ghz NE25139-T1 NE25139U71 NE720 NE25139T1U74 NE25139T1U71 16E-13	PDF
FHC30LG Abstract: ne72089 KC535C NE388-06 AL307BM IC 78L12 SOT89 KC535B AL307 79L05 hearing aid lm358 Text: RF TRANSISTORS Type P - p- n-p N - n-p-n MMBR5031 2SA1778 2SC3770 2SC4269 MMBR5179 2SC3837K 2SC3545 2SC3771 2SA1669 2SC4364 2SC4270 2SC4365 2SC3838K BFS17,BFS17A 2SC3841 BFR92A BFR93 2SC4569 BFR93P 2SC3774 BFR92P 2SC3775 BFR93A BFR92 2SC4568 2SC4857 MMBR911	Original	MMBR5031 2SA1778 2SC3770 2SC4269 MMBR5179 2SC3837K 2SC3545 2SC3771 2SA1669 2SC4364 FHC30LG ne72089 KC535C NE388-06 AL307BM IC 78L12 SOT89 KC535B AL307 79L05 hearing aid lm358	PDF
NE800296 Abstract: diode deg avalanche zo 150 63 NE72089 ne8002 SK3448 universal jfet biasing curve graph gunn diode ghz s-parameter NE800196 impatt diode NE800495-4 Text: California Eastern Laboratories AN82901-1 APPLICATION NOTE Application of Microwave GaAs FETs INTRODUCTION The history of converting microwave communications, as well as other communications technologies, to solid state electronics is a long one. Early advances were first made in	Original	AN82901-1 24-Hour NE800296 diode deg avalanche zo 150 63 NE72089 ne8002 SK3448 universal jfet biasing curve graph gunn diode ghz s-parameter NE800196 impatt diode NE800495-4	PDF
ds1302 circuit real time clock pic 16F877 Abstract: LCD display module 16x2 characters HD44780 16F84 lcd 2x16 16 pin diagram of HD44780 lcd display 16x2 16 pin diagram of lcd display 16x2 lcd HD44780 for pic 16f877 16 pin diagram of lcd display 16x2 hd44780 pic 16f628 circuits spi lcd initialization assembly code for 16f877 pic tw523 Text: User’s Guide Learn to Program PIC Micrcontrollers in easy to use Basic Revision 5.2 Warranty Basic Micro warranties its products against defects in material and workmanship for a period of 90 days. If a defect is discovered, Basic Micro will at our discretion repair, replace, or refund the purchase price of the	Original	Inc226 ds1302 circuit real time clock pic 16F877 LCD display module 16x2 characters HD44780 16F84 lcd 2x16 16 pin diagram of HD44780 lcd display 16x2 16 pin diagram of lcd display 16x2 lcd HD44780 for pic 16f877 16 pin diagram of lcd display 16x2 hd44780 pic 16f628 circuits spi lcd initialization assembly code for 16f877 pic tw523	PDF
cp4071 Abstract: data sheet IC 7408 2N4891 IC 7408 MDA970A2 MDA2500 1854-0071 MDA2502 2N4342 IC TTL 7400 Text: Transistor - Diode Cross Reference - H.P. Part Numbers to JEDEC Numbers Part Num. 1820-0225 1820-0240 1820-0352 1820-1804 1821-0001 1821-0002 1821-0006 1850-0062 1850-0064 1850-0075 1850-0076 1850-0093 1850-0099 1850-0126 1850-0137 1850-0150 1850-0151 1850-0154	Original	68B09 SN74ALS04BN SN74ALS08N SN74ALS00AN CA3046 uA733 LM311P LM318 CA3094 78H05 cp4071 data sheet IC 7408 2N4891 IC 7408 MDA970A2 MDA2500 1854-0071 MDA2502 2N4342 IC TTL 7400	PDF
NE800296 Abstract: NE800196 NE24406 diode deg avalanche zo 150 63 SK3448 ne8002 NE868199 shockley diode NE800495-4 shockley diode application Text: California Eastern Laboratories AN82901-1 APPLICATION NOTE Application of Microwave GaAs FETs 9/82 INTRODUCTION The history of converting microwave communications, as well as other communications technologies, to solid state electronics is a long one. Early advances were first made in	Original	AN82901-1 NE800296 NE800196 NE24406 diode deg avalanche zo 150 63 SK3448 ne8002 NE868199 shockley diode NE800495-4 shockley diode application	PDF
c5088 transistor Abstract: transistor C3207 TLO84CN sec c5088 IN5355B D2817A C3207 transistor toshiba f630 TLO81CP MC74HC533N Text: Transistor - Diode Cross Reference - H.P. Part Numbers to JEDEC Numbers Part Num. 1820-0225 1820-0240 1820-0352 1820-1804 1821-0001 1821-0002 1821-0006 1850-0062 1850-0064 1850-0075 1850-0076 1850-0093 1850-0099 1850-0126 1850-0137 1850-0150 1850-0151 1850-0154	Original	1853IMPATT c5088 transistor transistor C3207 TLO84CN sec c5088 IN5355B D2817A C3207 transistor toshiba f630 TLO81CP MC74HC533N	PDF
NE72089A Abstract: NE720 MB427 ne72089 NE72000 2SK354A RN50 Text: NEC GENERAL PURPOSE GaAs MESFET FEATURES NE72089A NOISE FIGURE, ASSOCIATED GAIN vs. FREQUENCY • LOW COST • LOW NOISE FIGURE 0.8 dB at 4 GHz 1.7dB at8G H z • HIGH ASSOCIATED GAIN 12.0 dB at 4 GHz 9.0 dB at 8 GHz m "D HIGH MAXIMUM AVAILABLE GAIN 16.0 dB at 4 GHz	OCR Scan	NE720 NE72089A NE72000) NE72089A) NE72000 PACKAGEOUTUNE89A NE72000M MB427 ne72089 2SK354A RN50	PDF
2SK571 Abstract: ne72089 ne72084 NE72000 NE72089A 2SK354A 2SK571 equivalent 2SK57-1 NE720 NE7200 Text: NEC/ bM274m SbE D CALIFORNIA NEC OQOaa^D 3*^7 BINEC C T - 3 ,\- z £ GENERAL PURPOSE G aAs MESFET NE720 SERIES OUTLINE DIMENSIONS FEATURES • LO W C O S T Units in mm NE72000 (CHIP) (Units In pm) • LO W N O IS E PIQURE 100- • 0.8 dB at 4 GHz 1.7 dB at 8 GHz	OCR Scan	bM274m 0Q022TD NE720 NE72000) NE72084 NE72089A) NE72000 2SK571 ne72089 NE72089A 2SK354A 2SK571 equivalent 2SK57-1 NE7200	PDF
2SK571 Abstract: NE720 NE72084 NE72000 NE72089 2SK571 equivalent ga 132 2SK57-1 Text: NEC/ b427mM QQ022TD 317 «NE CC SbE D CALIFORNIA NEC GENERAL PURPOSE GaAs MESFET NE720 SERIES OUTLINE DIMENSIONS FEATURES • LOW COST Units in mm NE72000 (CHIP) (Units In pm) • LOW NOISE FIGURE 0.8 dB at 4 GHz 1.7 dB at 8 GHz i 35 • HIGH ASSOCIATED GAIN	OCR Scan	b427mM QQ022TD NE720 NE72000 Rn/50 NE72000 2SK571 NE72084 NE72089 2SK571 equivalent ga 132 2SK57-1	PDF
ne72089 Abstract: 13ha 2SK354A NE72089A 72000N NE72000 NE720 Text: NE720 SERIES GENERAL PURPOSE GaAs MESFET NE72089A NOISE FIGURE, ASSOCIATED GAIN vs. FREQUENCY FEATURES • LOW COST • LOW NOISE FIGURE 0.8 dB at 4 GHz 1.7 dB at 8 GHz • HIG H ASSOCIATED GAIN 12.0 dB at 4 GHz 9.0 dB at 8 GHz • 20 m 2, HIGH MAXIMUM AVAILABLE GAIN	OCR Scan	NE720 NE72089A E72000) NE72089A) E72000 NE72000 NE72000L NE72000M ne72089 13ha 2SK354A 72000N	PDF
NE72000 Abstract: NE720 Text: GENERAL PURPOSE GaAs MESFET FEATURES NE720 SERIES NE72089A NOISE FIGURE, ASSOCIATED GAIN vs. FREQUENCY • LOW COST • LOW NOISE FIGURE 0.8 dB at 4 GHz 1.7 dB at 8 GHz • HIGH ASSOCIATED GAIN 12.0 dB at 4 GHz 9.0 dB a t8 GHz • HIGH MAXIMUM AVAILABLE GAIN	OCR Scan	NE720 NE72089A NE72000) NE72089A) NE72000 NE72000M NE72000N	PDF

SVI 3104 c Abstract: UPC1678G ne333 stb 1277 TRANSISTOR equivalent transistor bf 175 NE85635 packaging schematic NE72000 VC svi 3104 NE9000 NE720 Text: Introduction Small Signal GaAs FETs Power GaAs FETs Small Signal Silicon Bipolar Transistors Power Silicon Bipolar Transistors Silicon Monolithic Circuits GaAs Monolithic Circuits Reliability Assurance Appendix This C atalog is printed on R ecycled Paper California Eastern Laboratories, Inc. reserves the right to make changes to the products or	OCR Scan	AN83301-1 NE24615 AN83302 AN83303-1 NE71083 NE70083 AN83901 AN85301 11/86-LN AN86104 SVI 3104 c UPC1678G ne333 stb 1277 TRANSISTOR equivalent transistor bf 175 NE85635 packaging schematic NE72000 VC svi 3104 NE9000 NE720	PDF
881-1 nec Abstract: NE345L-20B NES1417-20B cd 17821 LA 7687 a sit 16250 NE72084 NE3451600 NES1417-10B NES1723-20B Text: N E C / 1SE CALIFORNIA NEC D b4S7414 Q001S37 1 T -S 1 -9 0 L, S-BAND POWER G aAs MESFET NE345 SERIES FEATURES APPLICATIONS • C H IP O R P A C K A G E O P T IO N S • L-BAN D R A D A R • H IG H P out 1 0 W & 2 0 W • N ARRO W -BAN D C O M M U N IC A TIO N S	OCR Scan	b4S7414 G001S37 NE345 NE3451600 ofSiOz/SiNs72 S22-S21S12 NE345100 NE3451600 881-1 nec NE345L-20B NES1417-20B cd 17821 LA 7687 a sit 16250 NE72084 NES1417-10B NES1723-20B	PDF
ne71084 Abstract: NE76084 NE71000 NE32684A NE67383 NE72000 NE32584 ne72089 Text: Small Signal GaAs FET Selection Guide LOW NOISE GaAs FETs 1.0 to 40 12 2.0 10 0.6 11.0 2.0 20 11.0 00 Chip C or B 1-5 200 1.OtO 40 12 2.0 10 0.6 11.0 2-0 20 11.0 oo Chip D 1-22 280 0.1 to 18 12 2.0 10 0.75 10.5 2.0 20 12.0 00 Chip 0.3 2« 0.1 to 18 12 3.0	OCR Scan	NE24200 NE32400 NE33200 NE67300 NE71000 NE76000 NE76100 NE24283B NE67383 NE71083 ne71084 NE76084 NE32684A NE72000 NE32584 ne72089	PDF
ne71084 Abstract: GaAs MESFET NE25139 NE4200 NE32684A NE71000 71083 ne72089 NE72000 MESFET Application Text: Small Signal GaAs FET Selection Guide LOW NOISE GaAs FETs Typical Spécifications @ Ta * ZS'C ftffiW M M R M Bat* Part Humber Test Frequency Gita LeagM Width f Range \| Frequency C6HZ Min) Pows Bias NF/Gi Bias Available Vos Ids HFow 6* Vds Ids PliB Package	OCR Scan	S3200 NE87300 NE76000 NE24283B ne71084 GaAs MESFET NE25139 NE4200 NE32684A NE71000 71083 ne72089 NE72000 MESFET Application	PDF